KDZ10EV
Abstract: KDZ10V KDZ11EV KDZ12EV KDZ13EV KDZ15EV KDZ16EV KDZ18EV KDZ20EV KDZ22EV
Text: Surface Mount Zener Diodes 100mW 150mW 2A 2B 2C 2D 30 33 36 39 43 47 51 56 62 68 75 82 91 10 11 12 13 15 16 18 20 22 24 200mW 2A 2B 2C 2D 30 33 36 39 43 47 51 56 62 68 75 82 91 10 11 12 13 15 16 18 20 22 24 Marking Code Part No. BZX384-C2V4 BZX384-C2V7 BZX384-C3V0
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100mW
150mW
200mW
KDZ10EV
KDZ10V
KDZ11EV
KDZ12EV
KDZ13EV
KDZ15EV
KDZ16EV
KDZ18EV
KDZ20EV
KDZ22EV
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Schottky diode TO220
Abstract: No abstract text available
Text: DGS 20-018A S DGSK 40-018A IFAV = 23 A VRRM = 180 V CJunction = 33 pF Gallium Arsenide Schottky Rectifier Type Marking on product Circuit Package A = Anode, C = Cathode , TAB = Cathode DGS 20-018A DGS 20-018A A Single C TO-220 AC C A A DGS 20-018AS DGS 20-018AS
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0-018A
0-018A
O-220
20-018AS
Schottky diode TO220
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to-220 weight
Abstract: No abstract text available
Text: DGS 20-018A S DGSK 40-018A IFAV = 23 A VRRM = 180 V CJunction = 33 pF Gallium Arsenide Schottky Rectifier Type Marking on product Circuit Package A = Anode, C = Cathode , TAB = Cathode DGS 20-018A DGS 20-018A A Single C TO-220 AC C A A DGS 20-018AS DGS 20-018AS
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0-018A
0-018A
O-220
20-018AS
to-220 weight
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20015A
Abstract: No abstract text available
Text: DGS 20-015A DGS 20-018A DGSK 40-015A DGSK 40-018A IFAV = 23 A VRRM = 150/180 V CJunction = 33 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM V V Type 150 180 150 180 DGS 20-015A DGS 20-018A VRSM VRRM Type V V 150 180 150 180 A C TO-220 AC
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0-015A
0-018A
O-220
20015A
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SD5000N
Abstract: SD5001 sd5001 siliconix SD5001N sd5400 aros SD5400CY SD5000 SILICONIX SD5000
Text: T e m ic SD5000/5400 Series Siliconix N-Channel Lateral DMOS FETs SD5000I SD5400CY SD5000N SD5401CY SD5001N Product Summary Part Number v BR Ds Min (V) VGS(th) Max (V) SD5000I 20 1.5 SD5000N 20 1.5 SD5001N 10 1.5 SD5400CY 20 1.5 SD5401CY 10 1.5 For applications information see AN301, page 12-33.
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OCR Scan
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SD5000/5400
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
AN301,
SD5001
sd5001 siliconix
sd5400
aros
SD5000 SILICONIX
SD5000
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c3320
Abstract: l33a sth33n20fi UPS smk CIRCUIT STH33N20 STW33N20
Text: 2 < a O , ln é SGSTHOMSON E STH33N20/FI STW33N20 !ül gT[E M(gI i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR T YPE S TH33N20 STH33N20FI STW 33N20 V dss R D S (o n Id 200 V 200 V 200 V < 0.085 n < 0.085 n < 0.085 n 33 A 20 A 33 A . TYPICAL RDS(on) = 0.073 Q
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STH33N20/FI
STW33N2Q
STH33N20
STH33N20FI
STW33N20
STH/STW33N20
STH33N20FI
CC27111
STH33N20/F1
STW33N20
c3320
l33a
UPS smk CIRCUIT
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PDF
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rohm CRB25 series
Abstract: CRB25 samsung ltcc KOA RK73 samsung SMD resistors SMD resistors 0805 koa SMD resistors 1206 samsung crcw resistors dale KOA RK73B sei smd 1206 resistors
Text: PMS 378 neg. PMS 540 neg. RESISTORS KOA SPEER ELECTRONICS, INC. 5% STANDARD E-24 E-12 Decade Values 10 33 12 39 15 47 18 56 22 68 27 82 10 22 47 11 24 51 12 27 56 13 30 62 15 33 68 16 36 75 . . . your partner in advancing technology • 18 39 82 20 43 91
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CMF65
rohm CRB25 series
CRB25
samsung ltcc
KOA RK73
samsung SMD resistors
SMD resistors 0805 koa
SMD resistors 1206 samsung
crcw resistors dale
KOA RK73B
sei smd 1206 resistors
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Untitled
Abstract: No abstract text available
Text: DGS 20-018AS IFAV = 23 A VRRM = 180 V CJunction = 33 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM V V 180 180 Type A C TO-263 AB A DGS 20-018AS A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFAV IFAV
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20-018AS
O-263
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Untitled
Abstract: No abstract text available
Text: Voltage Variable Attenuator 50Ω RVA-33+ 20 to 3000 MHz The Big Deal • Broad band, 20 to 3000 MHz • High linearity: IP2 +85 dBm, IP3 +50 dBm • Well matched in/out ports, return loss 18 dB • Drop-in, no external matching circuits required CASE STYLE: DV874
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RVA-33+
DV874
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Untitled
Abstract: No abstract text available
Text: POWER GENERATION DIODES Selection guide POWER GENERATION DIODES Selection Guide STEP RECOVERY DIODES SILICON MULTIPLIER VARACTORS SALES OFFICES WEB SITE: http://www.tekelec-temex.com 1-36 AMERICA: +1 602 780 1995 BELGIUM: +32 (0) 2 715 90 20 FRANCE: +33 (0) 1 49 88 49 00
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D-68623
Abstract: No abstract text available
Text: DGS 20-018AS IFAV = 23 A VRRM = 180 V CJunction = 33 pF Gallium Arsenide Schottky Rectifier VRSM VRRM V V 180 180 Type A C TO-263 AB A DGS 20-018AS A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFAV IFAV TC = 25°C; DC
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20-018AS
O-263
D-68623
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Untitled
Abstract: No abstract text available
Text: 100V, 20A Low RDS ON N ch Trench Power MOSFET EKG1020 / FKG1020 Features Package TO220 EKG1020 VDS - 100 V ID - 20 A RDS(ON) - 33 mΩ typ.(VGS = 10 V, ID = 10 A)
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EKG1020
FKG1020
EKG1020
O220F
EKG1020/
FKG1020
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Untitled
Abstract: No abstract text available
Text: ZMM5252 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage24 @I(Z) (A) (Test Condition)5.2m Tolerance (%)20 P(D) Max. (W)500m¥ Z(z) Max. (ê) Dyn. Imped.33 Temp Coef pp/10k8.7 Maximum Operating Temp (øC)200õ
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ZMM5252
Voltage24
pp/10k8
StyleDO-213AA
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Untitled
Abstract: No abstract text available
Text: 1N5252 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage24 @I(Z) (A) (Test Condition)5.2m Tolerance (%)20 P(D) Max. (W)500m Z(z) Max. (ê) Dyn. Imped.33 Temp Coef pp/10k8.8 Maximum Operating Temp (øC)200’
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1N5252
Voltage24
pp/10k8
StyleDO-204AA
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10MQ100NPBF
Abstract: 20TQ045PBF 10BQ060PBF 20CTQ045SPBF 43CTQ100SPbF 10MQ040NPBF 30BQ060PBF 30cpq060pbf 8tq100pbf 30BQ040
Text: 2012-2012:QuarkCatalogTempNew 9/20/12 4:33 PM Page 2012 Diodes Schottky Diodes Continued RoHS POWER ENCLOSURES INTERCONNECT TEST & MEASUREMENT 25 DO-204AL SMB SMA D-PAK TO-220AC D2-PAK 40 V Stock No. Mfr.’s Type @ TC (°C) EAS (mj) IAR (A) IF(AV) (A) IRM
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DO-204AL
O-220AC
1N5819TR
11DQ04
10BQ040PBF
10MQ040NPBF
15MQ040NPBF
15MQ040NTRPBF
30BQ040PBF
31DQ04
10MQ100NPBF
20TQ045PBF
10BQ060PBF
20CTQ045SPBF
43CTQ100SPbF
30BQ060PBF
30cpq060pbf
8tq100pbf
30BQ040
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Untitled
Abstract: No abstract text available
Text: CDLL970 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage24 @I(Z) (A) (Test Condition)5.2m Tolerance (%)20 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.33 Temp Coef pp/10k Maximum Operating Temp (øC)200 Package StyleDO-213AA
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CDLL970
Voltage24
pp/10k
StyleDO-213AA
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2743002122
Abstract: SR305C104KAA CLC400 AD844A AD844 AD844B AD844JR AD844S EIA-481A EL2020
Text: a FEATURES Wide Bandwidth: 60 MHz at Gain of –1 Wide Bandwidth: 33 MHz at Gain of –10 Very High Output Slew Rate: Up to 2000 V/s 20 MHz Full Power Bandwidth, 20 V pk-pk, RL = 500 ⍀ Fast Settling: 100 ns to 0.1% 10 V Step Differential Gain Error: 0.03% at 4.4 MHz
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EIA-481A
AD844
16-Pin
AD539
C1258b
2743002122
SR305C104KAA
CLC400
AD844A
AD844
AD844B
AD844JR
AD844S
EL2020
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2743002122
Abstract: ad844 transresistance amp
Text: BACK a FEATURES Wide Bandwidth: 60 MHz at Gain of –1 Wide Bandwidth: 33 MHz at Gain of –10 Very High Output Slew Rate: Up to 2000 V/s 20 MHz Full Power Bandwidth, 20 V pk-pk, RL = 500 ⍀ Fast Settling: 100 ns to 0.1% 10 V Step Differential Gain Error: 0.03% at 4.4 MHz
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EIA-481A
AD844
16-Pin
C1258b
AD539
2743002122
ad844
transresistance amp
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PDF
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Untitled
Abstract: No abstract text available
Text: F E AT U R E S MODEL NO. DA095 6 20 - 400 MHz 0.5 dB LSB, 31.5 dB Range 5 nSec Transition Time 28 nSec Switching Speed Constant Phase TTL Control 38 Pin DIP 6 BIT Schottky Diode 6 Section Attenuator RF RF IN/OUT OUT/IN 38 GND GND 20 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21
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DA095
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v80100
Abstract: No abstract text available
Text: a FEATURES Wide Bandwidth: 60 MHz at Gain of –1 Wide Bandwidth: 33 MHz at Gain of –10 Very High Output Slew Rate: Up to 2000 V/s 20 MHz Full Power Bandwidth, 20 V pk-pk, RL = 500 ⍀ Fast Settling: 100 ns to 0.1% 10 V Step Differential Gain Error: 0.03% at 4.4 MHz
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EIA-481A
AD844
16-Pin
pdf/20010521/11may2001/html/AD844
v80100
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2743002122
Abstract: AD844 AD844A AD844B AD844JR AD844S EIA-481A EL2020
Text: a FEATURES Wide Bandwidth: 60 MHz at Gain of –1 Wide Bandwidth: 33 MHz at Gain of –10 Very High Output Slew Rate: Up to 2000 V/s 20 MHz Full Power Bandwidth, 20 V pk-pk, RL = 500 ⍀ Fast Settling: 100 ns to 0.1% 10 V Step Differential Gain Error: 0.03% at 4.4 MHz
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EIA-481A
AD844
16-Pin
AD539
C1258b
2743002122
AD844
AD844A
AD844B
AD844JR
AD844S
EL2020
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PDF
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hp33
Abstract: AD844 in6263 AD844ANZ AD844A AD844B AD844S AD844JRZ-16 HP3314A laser diode driver 1.5V input
Text: 60 MHz 2000 V/ s Monolithic Op Amp AD844 FUNCTIONAL BLOCK DIAGRAMS Wide bandwidth 60 MHz at gain of −1 33 MHz at gain of −10 Slew rate: 2000 V/μs 20 MHz full power bandwidth, 20 V p-p, RL = 500 Ω Fast settling: 100 ns to 0.1% 10 V step Differential gain error: 0.03% at 4.4 MHz
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AD844
EIA-481-A
16-Lead
D00897-0-2/09
hp33
AD844
in6263
AD844ANZ
AD844A
AD844B
AD844S
AD844JRZ-16
HP3314A
laser diode driver 1.5V input
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PDF
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Untitled
Abstract: No abstract text available
Text: a FEATURES Wide Bandwidth: 60 MHz at Gain of –1 Wide Bandwidth: 33 MHz at Gain of –10 Very High Output Slew Rate: Up to 2000 V/s 20 MHz Full Power Bandwidth, 20 V pk-pk, RL = 500 ⍀ Fast Settling: 100 ns to 0.1% 10 V Step Differential Gain Error: 0.03% at 4.4 MHz
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EIA-481A
AD844
16-Pin
images/AD844
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PDF
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D-68623
Abstract: No abstract text available
Text: DGS 20-018A DGSK 40-018A IFAV = 23 A VRRM = 180 V CJunction = 33 pF Gallium Arsenide Schottky Rectifier VRSM VRRM V V Type 180 180 DGS 20-018A VRSM VRRM Type V V 180 180 A A DGSK 40-018A C Single C A Conditions Maximum Ratings IFAV IFAV TC = 25°C; DC TC = 90°C; DC
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0-018A
O-220
D-68623
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