Semikron SKB 220
Abstract: semikron blocking diode 1200 V 250 A skb 33 02 skb 33 04 Semikron SKB 250/220 24A32 1V15M Semikron SKB b 80 semikron skb 33/08
Text: VRSM V VDRM VRRM V ID Tcase = 62 °C, full conduction 33 A 300 500 700 900 1100 1300 200 400 600 800 1000 1200 SKB 33/02 SKB 33/04 SKB 33/06 SKB 33/08 SKB 33/10 SKB 33/12 Symbol Conditions Tamb = 45 °C; ID SKB 33 SKB 33 isolated1) 2) chassis P1A/120 Tamb = 35 °C;P1A/120 F
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P1A/120
Nm/26
Semikron SKB 220
semikron blocking diode 1200 V 250 A
skb 33 02
skb 33 04
Semikron SKB 250/220
24A32
1V15M
Semikron SKB b 80
semikron skb 33/08
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semikron skb 33/08
Abstract: Semikron SKB 33/04 Semikron SKB b 80 single phase half controlled rectifier DIODE BRIDGE skb semikron skb 60 skb 33 04 semikron blocking diode 1200 V 250 A
Text: VRSM V VDRM VRRM V ID Tcase = 62 °C, full conduction 33 A 300 500 700 900 1100 1300 200 400 600 800 1000 1200 SKB 33/02 SKB 33/04 SKB 33/06 SKB 33/08 SKB 33/10 SKB 33/12 Symbol Conditions Tamb = 45 °C; isolated1) chassis2) P1A/120 Tamb = 35 °C;P1A/120 F
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P1A/120
P1A/120
Nm/44
Nm/26
semikron skb 33/08
Semikron SKB 33/04
Semikron SKB b 80
single phase half controlled rectifier
DIODE BRIDGE skb
semikron skb 60
skb 33 04
semikron blocking diode 1200 V 250 A
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KDZ10EV
Abstract: KDZ10V KDZ11EV KDZ12EV KDZ13EV KDZ15EV KDZ16EV KDZ18EV KDZ20EV KDZ22EV
Text: Surface Mount Zener Diodes 100mW 150mW 2A 2B 2C 2D 30 33 36 39 43 47 51 56 62 68 75 82 91 10 11 12 13 15 16 18 20 22 24 200mW 2A 2B 2C 2D 30 33 36 39 43 47 51 56 62 68 75 82 91 10 11 12 13 15 16 18 20 22 24 Marking Code Part No. BZX384-C2V4 BZX384-C2V7 BZX384-C3V0
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100mW
150mW
200mW
KDZ10EV
KDZ10V
KDZ11EV
KDZ12EV
KDZ13EV
KDZ15EV
KDZ16EV
KDZ18EV
KDZ20EV
KDZ22EV
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Untitled
Abstract: No abstract text available
Text: Noise Diodes SM4 10 kHz to 100 MHz Specifications RF Frequency Noise Output 10 kHz to 100 MHz 34 dB Min 10 KHz to 1 MHz ENR 33 dB min (1 MHz to 10 MHz) ENR 31 db min (10 MHz to 100 MHz) ENR Noise Spectral Density (No) -140 dBm/Hz Min (10 kHz-1 MHz) Bias Voltage
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Untitled
Abstract: No abstract text available
Text: Noise Diodes ST4 10 kHz to 3000 MHz Specifications RF Frequency Noise Output Noise Spectral Density No Bias Voltage Supply Current Impedance 10 kHz to 3000 MHz 34 dB Min (10 KHz to 1 MHz) ENR 33 dB min (1 MHz to 10 MHz) ENR 31 dB min (10 MHz to 100 MHz) ENR
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rohm CRB25 series
Abstract: CRB25 samsung ltcc KOA RK73 samsung SMD resistors SMD resistors 0805 koa SMD resistors 1206 samsung crcw resistors dale KOA RK73B sei smd 1206 resistors
Text: PMS 378 neg. PMS 540 neg. RESISTORS KOA SPEER ELECTRONICS, INC. 5% STANDARD E-24 E-12 Decade Values 10 33 12 39 15 47 18 56 22 68 27 82 10 22 47 11 24 51 12 27 56 13 30 62 15 33 68 16 36 75 . . . your partner in advancing technology • 18 39 82 20 43 91
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CMF65
rohm CRB25 series
CRB25
samsung ltcc
KOA RK73
samsung SMD resistors
SMD resistors 0805 koa
SMD resistors 1206 samsung
crcw resistors dale
KOA RK73B
sei smd 1206 resistors
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Semikron Semitop 2
Abstract: k 1199 SK35D SK35D12F 2SK35 SEMITOP
Text: VRRM ID Th = 80 °C V 33 A 1200 SK 35 D 12 F SEMITOP 2 Bridge Rectifier SK 35 D 12 F Symbol Conditions 1) SK 35 D Units ID Th = 80 °C 33 A IFSM i 2t Tvj = 150 °C; 10 ms Tvj = 150 °C; 10 ms 180 162 A A2s IRRM trr Qrr Tvj = 125 °C Tvj = 25 °C Tvj = 25 °C
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SK35D12F
SK35D12F
Semikron Semitop 2
k 1199
SK35D
2SK35
SEMITOP
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Untitled
Abstract: No abstract text available
Text: Request a Quote | Ask an Engineer Image description. Print this Sheet End of image description. Image description. as PDF EndSave of image description. ST2A 10 kHz to 3000 MHz Noise Diodes Specifications RF Frequency Noise Output 10 kHz to 3000 MHz 33 dB Min 10 KHz to 1 MHz ENR
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74291
Abstract: SUM33N20-60P-E3 SUM33N20-60P
Text: SUM33N20-60P Vishay Siliconix New Product N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (Ω) ID (A) 0.059 at VGS = 15 V 33 0.060 at VGS = 10 V 33 Qg (Typ) 53 • TrenchFET Power MOSFETS • 150 °C Junction Temperature
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SUM33N20-60P
O-263
SUM33N20-60P-E3
18-Jul-08
74291
SUM33N20-60P-E3
SUM33N20-60P
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74291
Abstract: SUM33N20-60P SUM33N20-60P-E3
Text: SUM33N20-60P Vishay Siliconix New Product N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (Ω) ID (A) 0.059 at VGS = 15 V 33 0.060 at VGS = 10 V 33 Qg (Typ) 53 • TrenchFET Power MOSFETS • 150 °C Junction Temperature
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SUM33N20-60P
O-263
SUM33N20-60P-E3
08-Apr-05
74291
SUM33N20-60P
SUM33N20-60P-E3
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Untitled
Abstract: No abstract text available
Text: FQP33N10 N-Channel QFET MOSFET 100 V, 33 A, 52 mΩ Description Features • 33 A, 100 V, RDS on = 52 mΩ (Max.) @ VGS = 10 V, ID = 16.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced
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FQP33N10
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Untitled
Abstract: No abstract text available
Text: Noise Diodes ST2A 10 kHz to 3000 MHz Specifications RF Frequency Noise Output Noise Spectral Density No Flatness Bias Voltage Supply Current Impedance 10 kHz to 3000 MHz 33 dB Min (10 KHz to 1 MHz) ENR 30 dB min (1 MHz to 100 MHz) ENR 28 db min (100 MHz to 3 GHz) ENR
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Untitled
Abstract: No abstract text available
Text: 100V, 20A Low RDS ON N ch Trench Power MOSFET EKG1020 / FKG1020 Features Package TO220 EKG1020 VDS - 100 V ID - 20 A RDS(ON) - 33 mΩ typ.(VGS = 10 V, ID = 10 A)
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EKG1020
FKG1020
EKG1020
O220F
EKG1020/
FKG1020
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MA4AGSW2
Abstract: SN62 PB36 ag2
Text: MA4AGSW2 AlGaAs SP2T PIN Diode Switch Features V 1.00 MA4AGSW2 Layout Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional bandwidth : 50 MHz to 70 GHz 0.7 dB Insertion Loss, 33 dB Isolation at 50 GHz Low Current consumption: -10 mA for Low Loss State +10 mA for Isolation
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33-05N
Abstract: VUM 33-05n
Text: VUM 33-05N ID25 = 47 A VDSS = 500 V RDS on = 0.12 Ω Power MOSFET Stage for Boost Converters Module for Power Factor Correction VRRM (Diode) VDSS V V 600 500 5 Type 1 3 2 7 8 1 4 6 3 4 2 VUM 33-05N 5 7 8 Conditions VDSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kΩ
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33-05N
20070704a
33-05N
VUM 33-05n
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Untitled
Abstract: No abstract text available
Text: VUM 33-05N ID25 = 47 A VDSS = 500 V RDS on = 0.12 Ω Power MOSFET Stage for Boost Converters Module for Power Factor Correction VRRM (Diode) VDSS V V 600 500 5 Type 1 3 2 7 8 1 4 6 3 4 2 VUM 33-05N 5 7 8 Conditions VDSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kΩ
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33-05N
33-05N
150fc
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SMD Transistors nc
Abstract: 4600 smd 2SJ605 SMD Transistor nc v4600
Text: Transistors IC SMD Type MOS Field Effect Transistors 2SJ605 TO-263 1 .2 7 -0+ 0.1.1 MAX. VGS = -10 V, ID = -33 A RDS(on)2 = 31 m MAX. (VGS = -4.0 V, ID = -33 A) Low input capacitance 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 2 .5 4 -0+ 0.2.2
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2SJ605
O-263
SMD Transistors nc
4600 smd
2SJ605
SMD Transistor nc
v4600
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74309
Abstract: SUP33N20-60P-E3 SUP33N20-60P sup33n20
Text: SUP33N20-60P Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (Ω) ID (A) 0.059 at VGS = 15 V 33 0.060 at VGS = 10 V 33 Qg (Typ) 53 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % UIS and Rg Tested
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SUP33N20-60P
O-220AB
SUP33N20-60P-E3
10lectual
18-Jul-08
74309
SUP33N20-60P-E3
SUP33N20-60P
sup33n20
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SUP33N20-60P-E3
Abstract: No abstract text available
Text: SUP33N20-60P Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (Ω) ID (A) 0.059 at VGS = 15 V 33 0.060 at VGS = 10 V 33 Qg (Typ) 53 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % UIS and Rg Tested
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SUP33N20-60P
O-220AB
SUP33N20-60P-E3
08-Apr-05
SUP33N20-60P-E3
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Untitled
Abstract: No abstract text available
Text: Ô13bb71 000b4MG ^144 • V drm V rsm V V rrm V Id Tease = 62 °C, full conduction 33 A 300 200 SKB 33/02 500 400 SKB 33/04 700 600 SKB 33/06 900 800 SKB 33/08 1100 1000 SKB 33/10 1300 1200 SKB 33/12 Symbol Conditions Id *q Ih II Vt V t (t o ) rr Id d ;Ir d
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13bb71
000b4MG
P1A/120
P1/120F
20-C/W
P1/120
fll3bb71
613bb71
GD0b442
0Q0b443
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Sj 33 diode
Abstract: semikron skb 60 Semikron SKB 250 DIODE BRIDGE SKB skb 33 04 GD 08 Rectifiers skb33/12h2
Text: s e MIKRO n V drm Id Tease = 62°C, full conduction 33 A V rrm V V rsm V 300 200 SKB 33/02 500 400 SKB 33/04 700 600 SKB 33/06 900 800 SKB 33/08 1100 1000 SKB 33/10 1300 1200 SKB 33/12 Symbol Conditions Id Tamb = Tamb It sm , Ifsm Tvj — T Vj = i2t T Vj =
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/44lb.
/26lb.
P1/120F
P1/120
SKB33
Sj 33 diode
semikron skb 60
Semikron SKB 250
DIODE BRIDGE SKB
skb 33 04
GD 08 Rectifiers
skb33/12h2
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Diode BAY 61
Abstract: Diode BAY 55 Diode BAY 80 3AX11 BXY 36 DIODE diode sax 34 bxy26 Diode BAY 68 Diode BAY 23 BAX11
Text: /licrowave semiconductor diodes and components licrowave PN silicon diodes Type Fig. Nr. GHz ft ns ÄthJC K/W 10.15 33 2 10 33 2 10 3AX 11/10 34 60 3AX11/IU 34 60 o / • Ö6V 00 cj at £/r = 6 V pF CO tf BR V 60 4,7.6,8 47 1 12 34 60 3,3.4,7 47 1 12
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3AX11/IO
3AX11/IU
11/ilo
3AX11/IÃ
3AX11
BAX11
79/III
79/IV
26/II
Diode BAY 61
Diode BAY 55
Diode BAY 80
BXY 36 DIODE
diode sax 34
bxy26
Diode BAY 68
Diode BAY 23
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1n2169
Abstract: 1N2166 1n2620 1N2163A 1N2621 1N2623 1N2168A 1N2163 1N2624A 1N2166A
Text: 1 WATT, Metal TC r VOLTAGE TEMPERATURE STABILITY A V zt Max. mV EFFECTIVE TEMPERATURE COEFFICIENT %/°C VOLTS Min. Max. I zt mA MAXIMUM ZENER IMPEDANCE ZzT @ IZT Ohms 9.8 9.6 9.8 9.6 10 10 10 10 15 15 15 15 33 33 85 85 .005 .005 .005 .005 55 55 to to to to
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DO-13)
1N2163
1N2163A
1N2164
1N2164A
1N2165
1N2165A
1N2166
1N2166A
1N2167
1n2169
1n2620
1N2621
1N2623
1N2168A
1N2624A
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Untitled
Abstract: No abstract text available
Text: n ix Y S VUM 33-05 Power MOSFET Stage for Boost Converters I d 25 V Ds s R DS on Module for Power Factor Correction V RRM (Diode) V DSS V V 600 500 5 Type • VUM 33-05N v DSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kfì Continuous
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33-05N
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