Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    33-/GENERAL SEMICONDUCTOR SM 3B DIODE Search Results

    33-/GENERAL SEMICONDUCTOR SM 3B DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    33-/GENERAL SEMICONDUCTOR SM 3B DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GENERAL SEMICONDUCTOR SM 3b diode

    Abstract: 1n5224b fsc 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B
    Text: 1N5221B - 1N5263B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units PD Power Dissipation 500 Derate above 50°C 4.0 Storage Temperature Range -65 to +200


    Original     		PDF 1N5221B 1N5263B DO-35 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B GENERAL SEMICONDUCTOR SM 3b diode 1n5224b fsc 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B

    1N5221B

    Abstract: 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5263B f221b
    Text: 1N5221B - 1N5263B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units PD Power Dissipation 500 Derate above 50°C 4.0 Storage Temperature Range -65 to +200


    Original     		PDF 1N5221B 1N5263B DO-35 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5263B f221b

    GENERAL SEMICONDUCTOR SM 3b diode

    Abstract: 1N5985B 1N5988B 1N6020B 1N5990B 1N5993B 555 fairchild 1N5996B 1N5987B 1N5991B
    Text: 1N5985B - 1N6025B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA=25°C unless otherwise noted Value Units Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Parameter 500 mW Derate above 75°C


    Original     		PDF 1N5985B 1N6025B DO-35 1N5985B 1N5986B 1N5987B 1N5988B 1N5989B 1N5990B 1N5991B GENERAL SEMICONDUCTOR SM 3b diode 1N5988B 1N6020B 1N5990B 1N5993B 555 fairchild 1N5996B 1N5987B 1N5991B

    1N5993B

    Abstract: 1N6020B 1N6005B 1N5988B 1N5999B 1N6006B 1N5990B 1N5994B 1N5995B 1N5996B
    Text: 1N5985B - 1N6025B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA=25°C unless otherwise noted Value Units Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Parameter 500 mW Derate above 75°C


    Original     		PDF 1N5985B 1N6025B DO-35 1N5985B 1N5986B 1N5987B 1N5988B 1N5989B 1N5990B 1N5991B 1N5993B 1N6020B 1N6005B 1N5988B 1N5999B 1N6006B 1N5990B 1N5994B 1N5995B 1N5996B

    Untitled

    Abstract: No abstract text available
    Text: 1N5221B - 1N5263B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The


    Original     		PDF 1N5221B 1N5263B DO-35

    Fabry-Perot-Laser-Diode

    Abstract: A3 DIODE GENERAL SEMICONDUCTOR SM 3b diode
    Text: Fiber Optics Low Power Triport-BIDI V23875-T1161-C1xx Optical Triplexer Component 1310 nm Tx / 1310 nm Digital Rx with 622 Mbit/s, 3.3 V TIA / 1555 nm Analog Video Rx Preliminary Data The V23875-T1161-C1xx is an optical triplexer component designed for full-duplex digital


    Original     		PDF V23875-T1161-C1xx Fabry-Perot-Laser-Diode A3 DIODE GENERAL SEMICONDUCTOR SM 3b diode

    ULM850-L2-PL-S0101U

    Abstract: ULM850-PM-TN-S46FZP ULM850-VP-PL-S46XOP 894nm ULM850-PM-TN-S46XZP SM 850nm laser vcsel ulm tdlas vcsel SMD MAP 3959 ulm vcsel reference
    Text: Single Mode VCSEL 850nm,TO46,0.5mW Ideal circular gaussian beam Built-in ESD protection structure High reliability, 10 years @ 85°C INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated


    Original     		PDF 850nm 850nm-long-life-sm-vcsel ULM850-L2-PL-S0101U ULM850-PM-TN-S46FZP ULM850-VP-PL-S46XOP 894nm ULM850-PM-TN-S46XZP SM 850nm laser vcsel ulm tdlas vcsel SMD MAP 3959 ulm vcsel reference

    2.5V RELAY

    Abstract: relay coil 270r PASB SMT-1210 108505686 J119 pDS4102-DL2 J117 al15 schematic J122 transistor
    Text: High-Speed SERDES Briefcase Board Evaluation Board for ORSO/ORT82G5, ispGDX2 and ispPAC Devices User’s Guide March 2007 Revision: EB01_01.1 Lattice Semiconductor High-Speed SERDES Briefcase Board User’s Guide Introduction This user’s guide describes the Lattice High-Speed SERDES Briefcase Board, a stand-alone evaluation board for


    Original     		PDF ORSO/ORT82G5, ORSO82G5 ORT82G5 ispGDX2-256 ispPAC-POWR1208. ulS09, SA054A00- P3828119 2.5V RELAY relay coil 270r PASB SMT-1210 108505686 J119 pDS4102-DL2 J117 al15 schematic J122 transistor

    MIL-STD-750 METHOD 2036 conditions E

    Abstract: 1N6672 1N6672R 1N6673 1N6673R 1N6674 1N6674R
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 17 July 2009. INCH-POUND MIL-PRF-19500/617D 17 April 2009 SUPERSEDING MIL-PRF-19500/617C 3 August 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL,


    Original     		PDF MIL-PRF-19500/617D MIL-PRF-19500/617C 1N6672 1N6674 1N6672R 1N6674R, MIL-PRF-19500. MIL-STD-750 METHOD 2036 conditions E 1N6673 1N6673R 1N6674 1N6674R

    Untitled

    Abstract: No abstract text available
    Text: INCH-POUND MIL-M-38510/80E 10 August 2005 SUPERSEDING MIL-M-38510/80D 8 December 1987 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON Inactive for new design after 23 August 1996. This specification is approved for use by all Departments


    Original     		PDF MIL-M-38510/80E MIL-M-38510/80D MIL-M-38510/80E

    1N6659R

    Abstract: MIL-STD-750 METHOD 2036 conditions E 1N6659 1N6658R 1N6657 1N6657R 1N6658 MIL-STD-750 METHOD 2036 CONDITION E
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 17 July 2009. MIL-PRF-19500/616G 17 April 2009 SUPERSEDING MIL-PRF-19500/616F 27 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL,


    Original     		PDF MIL-PRF-19500/616G MIL-PRF-19500/616F 1N6657 1N6659 1N6657R 1N6659R, MIL-PRF-19500. 1N6659R MIL-STD-750 METHOD 2036 conditions E 1N6659 1N6658R 1N6658 MIL-STD-750 METHOD 2036 CONDITION E

    406G

    Abstract: 406-G 1N4465 1N4460D 1N4477 1N4460 1N4471 1N4469 1N4474 1N4466
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 September 2006. INCH-POUND MIL-PRF-19500/406G 23 June 2006 SUPERSEDING MIL-PRF-19500/406F 24 November 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,


    Original     		PDF MIL-PRF-19500/406G MIL-PRF-19500/406F 1N4460, 1N4460C, 1N4460D 1N4496, 1N4496C, 1N4496D, 1N6485, 1N6485C, 406G 406-G 1N4465 1N4477 1N4460 1N4471 1N4469 1N4474 1N4466

    BJ24CA

    Abstract: No abstract text available
    Text: SMBJ5.0 thru SMBJ170CA 600 Watt Surface Mount TVS TEL: 805-498-2111 FAX : 805-498-3804 DESCRIPTION FEATURES: The SMBJ series of transient voltage suppressors are designed to protect components from over voltages caused by electrostatic discharge ESD , electrical fast


    OCR Scan     		PDF SMBJ170CA BJ24CA

    3b49

    Abstract: No abstract text available
    Text: Revised March 1999 SEMICONDUCTOR TM FST16292 12-Bit to 24-Bit Multiplexer/Demultiplexer Bus Switch General Description Features The Fairchild Switch FST16292 provides tw e lve 2:1 high­ speed C M OS TT L-com patible m ultiplexer/dem ultiplexer bus sw itches. T h e low on resistance of the sw itch allows


    OCR Scan     		PDF FST16292 12-Bit 24-Bit 3b49

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor M S M 6 3 7 5 /4 /3 /2 -X X X 1M bit/512K bit/256K bit/128K bit M A S K RO M S P E E C H S Y N T H E S IZ E R G E N E R A L D E S C R IP T IO N The MSM 6375 series is an ADPCM speech synthesis LSI utilizing a CM OS speech pro­ cessor circuit in conjunction with a built-in


    OCR Scan     		PDF it/512K it/256K it/128K 12-bit 200ms

    Untitled

    Abstract: No abstract text available
    Text: E2B0045-27-Y3 O K I Semiconductor MSM9006-01, -02 This version: Nov. 1997 Previous version: Mar. 1996 LCD Driver with Keyscan Function GENERAL DESCRIPTION The MSM9006-01 is an LCD driver for a 1 /3 duty dynamic display. It can directly drive an LCD with a maximum of 123 segments.


    OCR Scan     		PDF E2B0045-27-Y3 MSM9006-01, MSM9006-02 MSM9006-01 MSM9006-02 QFP64-P-1414-0 80-BK

    JRC OPamp

    Abstract: depth sounder j811 JRC 5068 G diode T-71 opamp jrc t1053 LM6142 LM6142AIM LM6142AIN
    Text: M arch 1995 Semiconductor LM 6142 Dual and LM 6144 Quad High S p e e d /L o w P ow er 17 M Hz Rail-to-Rail Input-O utput O perational A m plifiers General Description Features A t Vg = 5V. Typ unless noted. • Rail-to-rail input CMVR - 0 .2 5 V to 5.25V ■ Rail-to-rail output swing 0.005V to 4.995V


    OCR Scan     		PDF LM6142 LM6144 LM6142/44 importan60 20-3A JRC OPamp depth sounder j811 JRC 5068 G diode T-71 opamp jrc t1053 LM6142AIM LM6142AIN

    Untitled

    Abstract: No abstract text available
    Text: DG408, DG409 S Single 8 >Channel/Differential 4-Channel CMOS Analog Multiplexers November 1994 Features Description • ON-Resistance 100& Maximum +25°C The DG408 Single 8-Channel and DG409 Differential 4-Channel monolithic CMOS analog multiplexers are drop-in replacements for the popular DG508A and DG509A


    OCR Scan     		PDF DG408, DG409 DG408 DG409 DG508A DG509A 250ns 1-800-4-HARRIS

    7211AIPL

    Abstract: 4 digit common anode 7-segment display 4 digit max7135 ICL7135
    Text: Semiconductor, Inc. PERSONAL COMPUTER DATA ACQUISITION A/D CONVERTER FEATURES GENERAL DESCRIPTION • The TC835 is a low-power, 4-1/2 digit 0.005% resolu­ tion , BCD analog-to-digital converter (ADC) that has been


    OCR Scan     		PDF TC835 TC7135, ICL7135, MAX7135 SI7135 TC7660 TC835 ICL7135 TC7135. 74C04 7211AIPL 4 digit common anode 7-segment display 4 digit

    CMPZ4124

    Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
    Text: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches


    OCR Scan     		PDF OT-23 350mW CMPT8099 CMPT2222A OT-23 OT-223 OT-89 CQ89D CQ89DS CMPS5061 CMPZ4124 CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B

    8051 microcontroller interface with ir sensors

    Abstract: iron bh curve siemens Mass Air Flow Sensor siemens TLE 4905L TRANSISTOR BH RW TESLA transistor Bipolar Static Induction Transistor ir slotted wheel encoder camshaft sensor target wheel axial sensing real time application of shape memory alloys
    Text: SIEMENS 6 Silicon Hail-Effect Sensors 6.1 Introduction Silicon Hall-Effect Sensors Electrical Tests and Application Circuit • The sockets or integrated circuits must not be conducting any voltage when individual devices or assembled circuit boards are inserted or withdrawn, unless works’


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: August 1996 Semiconductor 74ABT16541 16-Bit Buffer/ Line Driver with TRI-STATE Outputs General Description Features The ’ABT16541 contains sixteen non-inverting buffers with TRI-STATE outputs designed to be employed as a memory and address driver, clock driver, or bus oriented transmitter/


    OCR Scan     		PDF 74ABT16541 16-Bit ABT16541 ABT541

    CERAMIC LEADLESS CHIP CARRIER

    Abstract: 54F253DM 54F253FM 74F253 74F253PC 74F253SC 74F253SJ F253 J16A M16A
    Text: S E M IC O N D U C T O R tm 74F253 Dual 4-Input Multiplexer with 3-STATE Outputs General Description Features The ’F253 is a dual 4-input m ultiplexer w ith 3-STATE out­ puts. It can select tw o bits of data from four sources using com m on select inputs. The output may be individually


    OCR Scan     		PDF 74F253 74F253PC 16-Lead 54F253DM 16nter CERAMIC LEADLESS CHIP CARRIER 54F253DM 54F253FM 74F253 74F253PC 74F253SC 74F253SJ F253 J16A M16A

    TRANSISTOR NPN BA RV SOT - 89

    Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124
    Text: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes


    OCR Scan     		PDF CQ89N CQ89DS CQ89MS CQ89NS OT-89 CMPSS061 CMPS5062 CMPS5063 CMPS5064 CZS5064 TRANSISTOR NPN BA RV SOT - 89 bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124