C 14S

Contextual Info: SIEMENS 4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE HYM 324000GD-50/-60 Preliminary Information • 4 0194 034 words by 32-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time 110 ns cycle time (-60 version)

Contextual Info: SIEMENS 4M x 32 -Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE HYM 324000GD-50/-60 Advanced Information • 4 0194 034 words by 32-bit organization • Fast access and cycle time 50 ns access time 90 ns cycle time -50 version 60 ns access time 110 ns cycle time (-60 version)

Contextual Info: 324000S/SG -60/70 4,194,304 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM 324000S/SG is a 4,194,304 word by 32 bit dynamic RAM module which is assembled with 8 TC5117400J devices on the printed circuit board. The THM 324000 can be used as well as 8,388,608 word by

HYM324000GD-50

Contextual Info: 4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE HYM 324000GD-50/-60 Preliminary Information • 4 0194 034 words by 32-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time 110 ns cycle time (-60 version)

tc5117400

Contextual Info: INTEGRATED TO SHIBA TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL 324000CS/CSG-50,60 TH M 324000BS/BSG-60,70 DATA TENTATIVE DATA 4,194,304 W O R D S X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The 324000CS/CSG/BS/BSG is a 4,194,304 words by 32 bits dynamic RAM module which

Contextual Info: SIEMENS 4M x 32 -Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE HYM 324000GD-50/-60 Advanced Information • 4 0194 034 words by 32-bit organization • Fast access and cycle time 50 ns access time 90 ns cycle time -50 version 60 ns access time 110 ns cycle time (-60 version)

0029-a a1

Contextual Info: Type 718P/719P, Orange Drop , High Voltage Polypropylene Film/Foil Type 718P/719P Orange Drop® Radial Lead High AC Voltage Polypropylene Film/Foil Capacitors Specifications Capacitance Range: 560 pF to 0.012 F Capacitance Tolerance: 718P: ±1% to ±10%

DB9-DB16

Abstract: AD2S80ALD AD2S80A DB10 demodulator gold hi1001 Vl 02f sincos osc1758 AD2S80ATE
Contextual Info: 分辨率可变的单芯片 旋变数字转换器 应用 直流无刷和交流电机控制 过程控制 机床数字控制 机器人技术 轴控制 军用伺服控制 概述 AD2S80A是一款单芯片10/12/14/16位旋变数字转换器， 提供40引脚DIP或44引脚LCC陶瓷封装。它采用BiMOS II工

Contextual Info: 5 mi ANALOG ► DEVICES Variable Resolution, Monolithic Resolver-to-Digital Converter AD2S83 FEATURES Monolithic Tracking R/D Converter High Accuracy Velocity Output High Max Tracking Rate 1040 RPS 10 Bits 44-Pin PLCC Package 10-, 12-, 14- or 16-Bit Resolution Set by User

Contextual Info: ANALOG DEVICES Variable Resolution, Resolver-to-Digital Converter AD2S83 FEATURES Tracking R/D Converter High Accuracy Velocity O utput High M ax Tracking Rate 1040 RPS 10 Bits 44-Lead PLCC Package 10-, 12-, 14- or 16-Bit Resolution Set by User Ratiom etric Conversion

90041-AS

Abstract: ATI Lead Free reflow soldering profile BGA 90023-AS 90022-AS LCD 90026 540-99-044-24-000 111-93-308-41-001 540-99-084-24-000-1 IP0002 41013 mounting clip dimensions
Contextual Info: Staying tough at the top When it comes to professional connecting devices with machined precision contacts read: ICsockets, PCB connectors and allied products you can consider Preci-Dip as one of the top addresses in the world. Preci-Dip's skill and manufacturing experience,

SBE719P1500VAC

Abstract: 718P182 orange drop radial capacitor orange drop
Contextual Info: Type 718P/719P, Orange Drop , High Voltage Polypropylene Film/Foil Type 718P/719P Orange Drop® Radial Lead High AC Voltage Polypropylene Film/Foil Capacitors Specifications Capacitance Range: 560 pF to 0.012 F Capacitance Tolerance: 718P: ±1% to ±10%

A039h

Abstract: 3A400
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

SRD546-1S

Abstract: natel engineering synchro resolver natel natel SR natel resolver to synchro
Contextual Info: NATEL SRD546 Synchro/Resolver-to-Digital Converter Many Pin-Programmable Features SRD546 Features 16 bit resolution 1 arc-minute accuracy Built-In-Test Continuous tracking even during data transfer inhibit does not interrupt tracking Pln-programmable for all standard

fsd 0165

Contextual Info: ANALOG DEVICES Variable Resolution, Monolithic Resolver-to-Digital Converters AD2S81A/AD2S82A AD2S82A FUNCTIONAL BLOCK DIAGRAM FEATURES M onolith ic B iM O S II Tracking R /D Converter Ratiom etric Conversion Low Pow er C onsum ption: 300 m W Typ D ynam ic Performance S e t by User

Spansion S29GL512N11

Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages

SGA23

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

STR 6656

Abstract: SUN HOLD relay MD-5 str 2105 F6524 LB1405 BCD 2421 LB1403 jw300 DFRD JW-22DA
Contextual Info: Version 1.0 Produced in Dec. 2003 R SSSharp Programmable Controller New Satellite JW300 Programiming Manual - Ladder Instruction Version We thank you for your purchase of the SHARP programmable controller JW300. This manual Programming Manual - Ladder Instruction Version mainly describes software

CMD44

Abstract: M51517 r305 finger print module BJT 3904 1510487 1SS355 ROHM smd code Z2p CMD62 RJ9 jack dimension CP10-VIA
Contextual Info: A B C D POWER ADAPTER 3V/5V/12V 4 CPU VIA C3 CPUCORE POWER PAGE 33 EBGA PAGE 3,4 PAGE 35 CHARGER BATTERY VTT 2.5V PAGE 36, 37 PAGE 34 PCI ID AD20 CARDBUS AD21 IEEE 1394 AD22 USB 2.0 AD24 LAN AD26 SOUTH BRIDGE AD18 PCI INT PCI REQ/GNT INTA#, INTD# REQ0#/GNT0#

RTS5158

Abstract: northbridge G41 se u10i layout GM965 28K1 IC NS0013 sla5t bga676 rtl8010 C1087
Contextual Info: A B C D E X'TAL 14.318MHz Merom Processor System Power Rail Management Dual-Core CLOCK GEN ICS9LPR358AGLFT uFCPGA 478 2 3,4 FSB (667/800 MHz) FSB 4 GM965/PM965 ATI M74M USB 1 LVDS ＊V ＊VS HIGH HIGH ON ON ON ON S3 (Suspend to RAM) LOW HIGH HIGH HIGH ON

719P

Contextual Info: Type 718P/719P, Orange Drop , High Voltage Polypropylene Film/Foil Ordering/Part Number Information 719P 222 5 1500 M B 3 – XXX A suffix may be added to denote special construction, marking, packaging, test requirements, etc. Lead Length 1 = 0.187 4.7 ±0.030 (0.8)

Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,

a22t

Abstract: S19G S29GL-N
Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications