ic 4081 pin diagram
Abstract: No abstract text available
Text: ►UNDER DEVELOPMENT S-8423 Series BATTERY BACKUP IC The S-8423 Series is a CMOS 1C designed for use in th e sw itching circuits of m ain and backup m icrocom puters. po w e r su p p lie s of 3-V o p e ra tio n It consists of tw o voltage regulators, three voltage
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S-8423
10//F
10/iF
ic 4081 pin diagram
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71RA50
Abstract: CSR BC4 a10ra11r
Text: TOSHIBA THM72V4030BTG60/70 PRELIMINARY 4,194,304 WORDS X 72 BIT DYNAMIC RAM MODULE Description TheTHM 72V4030BTG is a 4,194,304 words by 72 bits dynamic RAM m odule which assembled 18 pcs ofTC 51V16400BS T on the printed circuit board. This m odule is optimized for application to the systems which are required high density and large
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THM72V4030BTG60/70
72V4030BTG
51V16400BS
THMxxxxxx-60)
THMxxxxxx-70)
THM72V4030BTG-6OÏ
DM32061195
DM32061195
THM72V4030BTG
THM72V4030BTG-60/70
71RA50
CSR BC4
a10ra11r
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Untitled
Abstract: No abstract text available
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MCM54280B MCM5L4280B MCM5V4280B Product Preview 256K x 18 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable The MCM54280B is a 0.6|i CMOS high-speed dynamic random access memory. It is organized as 262,144 eighteen-bit words and fabricated with CMOS silicon-gate
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MCM54280B
54280BT70R
54280BT80R
54280BT10R
5L4280BJ70
5L4280BJ80
5L4280BJ10
5L4280BT70
5L4280BT80
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SS421L
Abstract: TA 2092 N
Text: LOW WHEN FREQUENCY IS GREATER THAN SET POINT A B S O L U T E M A X I MUM R A T I N G S . C i r c u i t f u n c t i o n is not g u a r a n t e OPTL 2X R.010 Z I / 2X 45 !_ . 1 4 4 ± . 002 xceeded, TPM 1.1 PARAMPTER AMB I E N T T E M P P R A T U R E MI N
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SS421L
SS421L
TA 2092 N
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Untitled
Abstract: No abstract text available
Text: 64K X 18, 32K x 32/36 3.3V I/O, F L O W -T H R O U G H S Y N C B U R S T SRAM I^ IIC R D N MT58LC64K18B3, MT58LC32K32B3, MT58LC32K36B3 SYNCBURST SRAM 3.3V Supply, Flow-Through and Burst Counter SYNCBURST SRAM FEATURES • • • • • • • • • •
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MT58LC64K18B3,
MT58LC32K32B3,
MT58LC32K36B3
100-lead
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Untitled
Abstract: No abstract text available
Text: 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM M IC R O N I TECHNOLOGY, INC. MT58LC128K18C6, MT58LC64K32C6, MT58LC64K36C6; MT58LC128K18F1, MT58LC64K32F1, MT58LC64K36F1 2Mb SYNCBURST SRAM 3.3V V d d , 3.3V or 2.5V I/O, Pipelined, Double-Cycle Deselect
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MT58LC128K18C6,
MT58LC64K32C6,
MT58LC64K36C6;
MT58LC128K18F1,
MT58LC64K32F1,
MT58LC64K36F1
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KC102
Abstract: No abstract text available
Text: |v i i c : 64K X 18, 32K x 32/36 3.3V I/O, PIPELINED, SCD SYNCBURST SRAM r o n MT58LC64K18D8, MT58LC32K32D8, MT58LC32K36D8 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Single-Cycle Deselect SYNCBURST SRAM FEATURES • • • • • • • •
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MT58LC64K18D8,
MT58LC32K32D8,
MT58LC32K36D8
KC102
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Untitled
Abstract: No abstract text available
Text: ADVANCE M I|— C 3nP vl I Mi — 128K x 18, 64K x 32/36 2. 5V I/O, FLOW -THROUGH SYN CBUR ST SRAM MT58LC128K18E1, MT58LC64K32E1, MT58LC64K36E1 SYNCBURST SRAM 3.3V Supply, 2.5V I/O, Flow-Through and Burst Counter SYNCBURST SRAM FEATURES • • • • •
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MT58LC128K18E1,
MT58LC64K32E1,
MT58LC64K36E1
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X3286
Abstract: No abstract text available
Text: ADVANCE 128K x 18, 6 4 K x 32/36 3.3V I/O. F L O W -T H R O U G H S Y N C B U R S T SR AM M IC R O N MT58LC128K18B3, MT58LC64K32B3, MT58LC64K36B3 SYNCBURST SRAM 3.3V Supply, Flow-Through and Burst Counter SYNCBURST SRAM FEATURES • • • • • • •
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MT58LC128K18B3,
MT58LC64K32B3,
MT58LC64K36B3
X3286
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Untitled
Abstract: No abstract text available
Text: 128K X 18. 64K x 32/36 3.3V I/O, PIPELINED, SCD S Y N C B U R S T SR AM p ilC IR O IS J MT58LC128K18D8, MT58LC64K32D8, MT58LC64K36D8 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Single-Cycle Deselect SYNCBURST SRAM FEATURES • • • • •
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MT58LC128K18D8,
MT58LC64K32D8,
MT58LC64K36D8
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Untitled
Abstract: No abstract text available
Text: M O S E L V TTE U C PRELIMINARY V52C8258 MULTIPORT VIDEO RAM WITH 256K X 8 DRAM AND 512 X 8 SAM HIGH PERFORM ANCE V 52C8258 60 70 80 Max. RAS Access Time, Irac 60 ns 70 ns 80 ns Max. CAS Access Time, (Icac) 15 ns 20 ns 25 ns Max. Column Address Access Time, (t^ )
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V52C8258
52C8258
V52C8258
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON 256K x 18,128K x 32/36 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM • Q X /M f^ D I in Q T O T I M v D U l l O I MT58LC256K18B4, MT58LC128K32B4, MT58LC128K36B4 SRAM 3.3V Supply, Flow-Through and Burst FEATURES • • • • • • • • •
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MT58LC256K18B4,
MT58LC128K32B4,
MT58LC128K36B4
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Untitled
Abstract: No abstract text available
Text: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM MICRON' I TECHNOLOGY, INC. 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V Supply, 3.3V or 2.5V I/O, Flow-Through FEATURES • • •
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MT58L512L18F,
MT58L256L32F,
MT58L256L36F;
MT58L512V18F,
MT58L256V32F,
MT58L256V36F
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Untitled
Abstract: No abstract text available
Text: M m p n M 8 I 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, FLOW-THROUGH ZBT SRAM O lV ilU ^ IV IU MT55L128L18F, MT55L64L32F, MT55L64L36F ZBT SRAM 3.3V Vdd, 3.3V I/O FEATURES High frequency and 100 percent bus utilization Fast cycle times: 10ns, 11ns and 12ns Single +3.3V +5% power supply
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MT55L128L18F,
MT55L64L32F,
MT55L64L36F
55L128L18F
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Untitled
Abstract: No abstract text available
Text: M m P ¿M O : 1 ¿O K X 1 « , b 4 K X 6 Z / 6 b n M I 3.3V I/O, PIPELINED ZBT SRAM O lV ilU ^ IV IU MT55L128L18P, MT55L64L32P, MT55L64L36P ZBT SRAM 3.3V Vdd, 3.3V I/O FEATURES High frequency and 100 percent bus utilization Fast cycle times: 7ns, 7.5ns, 8.5ns and 10ns
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MT55L128L18P,
MT55L64L32P,
MT55L64L36P
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Untitled
Abstract: No abstract text available
Text: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM MT55L512L18F, MT55L256L32F, MT55L256L36F; MT55L512V18F, MT55L256V32F, MT55L256V36F 8Mb ZBT SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES • High frequency and 100 percent bus utilization • Fast cycle times: 10ns, 11ns and 12ns
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MT55L512L18F,
MT55L256L32F,
MT55L256L36F;
MT55L512V18F,
MT55L256V32F,
MT55L256V36F
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Untitled
Abstract: No abstract text available
Text: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18F, MT55L128L32F, MT55L128L36F; MT55L256V18F, MT55L128V32F, MT55L128V36F 4Mb ZBT8SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES High frequency and 100 percent bus utilization
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MT55L256L18F,
MT55L128L32F,
MT55L128L36F;
MT55L256V18F,
MT55L128V32F,
MT55L128V36F
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Untitled
Abstract: No abstract text available
Text: APR 13 1993 # • NEWBRIDGE JANUARY 1993 C A 9 5 C 6 8 /1 8 /0 9 MICROSYSTEMS DES DATA CIPHERING PROCESSORS DCP Encrypts/Decrypts data using National Bureau of Standards Data Encryption Standard (DES) • High speed, pin and function com patible version
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AM9568,
AM9518
VM009
CA95C68/18tQ8i
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Untitled
Abstract: No abstract text available
Text: 8Mb: 512K x 18, 256K x 32/36 PIPELINED, DCD SYNCBURST SRAM MT58L512L18D, MT58L256L32D, MT58L256L36D 8Mb SYNCBURST SRAM 3.3V Vdd, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • • • • • • • • • Fast clock and OE# access times
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MT58L512L18D,
MT58L256L32D,
MT58L256L36D
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Untitled
Abstract: No abstract text available
Text: AD VA NC E 12 8 K x 18, 64K x 32/ 36 LVTTL, F L O W - T H R O U G H ZBT SRAM MT55L128L18F, MT55L64L32F, MT55L64L36F 2.25Mb ZBT SRAM 3.3V V dd, Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization
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MT55L128L18F,
MT55L64L32F,
MT55L64L36F
100-pin
MT55L128L18FT-X
MT55L64L32FT-X
MT55L64L36FT-X
x32/36
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D75306GF
Abstract: d75p316 D75304GF D75308GF PD75316G D75312GF PD75X nec PC141 NEC microcontroller qfp-80 d75316
Text: . |\| E ¿/PD75316 Fam ily C jiP D75304/306/308/312/316/P308/P316A Single-Chip Microcontrollers With LCD Controller/Driver NEC Electronics Inc. June 1994 Description The juPD75316 fam ily of high-perform ance 4-bit single chip CMOS m icrocontrollers includes the follow ing
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uPD75316
D75304/306/308/312/316/P308/P316A)
juPD75316
fiPD75304
fiPD75312
/JPD75P316A
jUPD75306
PD75316
fiPD75308
juPD75P308
D75306GF
d75p316
D75304GF
D75308GF
PD75316G
D75312GF
PD75X
nec PC141
NEC microcontroller qfp-80
d75316
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ge ds-38
Abstract: c1615 ftm 230 IHb si 51C259HL 51C259HL-15 51C259HL-20 C1608 C1609
Text: ll’M f-P M M Ä l i W ir r t e ! 51C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM 5 1 C 2 5 9 H L -1 5 5 1 C 2 5 9 H L -2 0 15 0 70 Maximum Access Time ns Maximum Column Address Access Time (ns) Maximum CHM OS Standby Current (mA)
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51C259HL
51C259HL-15
51C259HL-20
ge ds-38
c1615
ftm 230
IHb si
51C259HL-20
C1608
C1609
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2TC6
Abstract: L710001
Text: Advance Information This document contains information on a product under development. Specifications are subject to change without notice. Distinguishing Features Arbitrary Scaling of Raster Bit Maps from 5% through 750% Scale Down Reduce and Scale Up (Enlarge) Capability
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132-pin
Bt710
Bt710KG
Bt700EVK
2TC6
L710001
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motorola 68000
Abstract: No abstract text available
Text: MOTOROLA • i SEMICONDUCTOR ■ TECHNICAL DATA MC68030 Technical Sum m ary SECOND-GENERATION 32-BIT ENHANCED MICROPROCESSOR The MC68030 is a 32-bit virtu al m em ory m icroprocessor that integrates the fu n c tio n a lity o f an MC68020 core w ith the added capabilities o f an on-chip
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MC68030
32-BIT
MC68030
MC68020
256-byte
Z3D29
Z1D27
motorola 68000
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