transistor power rating 5w
Abstract: DU2805S transistor Pout 5W B62152A
Text: e ec=.- = :-=s = = = -r-= =z r = an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 5W, 28V DU2805S v2.00 Features l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Koise Figure Than Bipolar Devices
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DU2805S
918OpF
B62152-AOOOl-X001
transistor power rating 5w
DU2805S
transistor Pout 5W
B62152A
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P77 transistor
Abstract: 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode
Text: ,z= i-s L-J =7 f .- an AMP company * z z - = = Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry
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ECG5016A
PH1214-
P77 transistor
1.5 j63
.15 j63
BZ15
ECG5016A
l 9113
J4 81 diode
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b 595 transistor
Abstract: Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE
Text: =s = =-= ‘, = * an AMP .- -=r= FF company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry
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PH31355M
15-j3
b 595 transistor
Mallory Capacitor
transistor b 595
J3 transistor
transistor 15j30
Rogers 6010.5
PH3135-5M
electrolytic Mallory Capacitor
MICROWAVE TEST FIXTURE
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DU1215S
Abstract: No abstract text available
Text: RF MOSFET Power Transistor, ISW, 12V 2 - 175 MHz DU1215S Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Specifically Designed for 12 Volt Applications
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DU1215S
DU1215S
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Transistor Equivalent list
Abstract: transistor A5G "RF MOSFET" DU2860U 300 Amp mosfet resistor 300 ohms equivalent transistor rf mosfet 800 v DU2860
Text: s2zz-f rgy= e -A5g =r- -=- an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 6OW, 28V DU2860U v2.00 Features A 4Gl. N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
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DU2860U
9-18OpF
Transistor Equivalent list
transistor A5G
"RF MOSFET"
DU2860U
300 Amp mosfet
resistor 300 ohms
equivalent transistor rf
mosfet 800 v
DU2860
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20 amp MOSFET transistor
Abstract: MOSFET POWER TRANSISTOR DU2880V
Text: an AMP company RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz DU2880V Features . N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C
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DU2880V
5-j14
20 amp MOSFET transistor
MOSFET POWER TRANSISTOR
DU2880V
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FL 1173
Abstract: Transistor A 1776 PH1516-10
Text: =_ F’E an AMP company Wireless Bipolar Power Transistor, 1.45 - 1.60 GHz 1OW PHl516-10 v2.00 Features l l l l l l IzS Designed for Cellular Base Station Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PEP Class A: +49 dBm Typ 3rd Order Intercept Point
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PHl516-10
t13Mn,
FL 1173
Transistor A 1776
PH1516-10
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UF2815OJ
Abstract: No abstract text available
Text: = an AMP =c= =z company = = RF MOSFET Power 100 - 500 MHz Transistor, 15OW, 28V UF2815OJ Features N-Channel Enhancement DMOS Structure Lower Capacitances Common Mode Device for Broadband Operation Source Configuration Lower Noise Floor Absolute Maximum Ratings at 25°C
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UF2815OJ
-65to
UF2815OJ
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PH1214-2M
Abstract: .15 j63 1.5 j63 1035 transistor
Text: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors
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PH1214-2M
214-2M
PH1214-2M
.15 j63
1.5 j63
1035 transistor
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PH0810-35
Abstract: Transistor c54 F1 J37 transistor 431 N cl 740
Text: = an AMP - company Wireless Bipolar Power Transistor, 850 - 960 MHz 35W PH081 o-35 Features Designed for Linear Amplifier Applications Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP Class A: +53dBm Typ 3rd Order Intercept Point Common Emitter Configuration
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PH081
53dBm
PH0810-35
lN4245
PH0810-35
Transistor c54
F1 J37
transistor 431 N
cl 740
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transistor b 595
Abstract: ATC100A PH1819-45
Text: = z-P= Coming Attractions an AMP company Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System
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PHl819-45
transistor b 595
ATC100A
PH1819-45
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transistor c 2499
Abstract: transistor tj 2499 12OW capacitor 4 f XF 020 transistor D 2499 DU28120T 22 pf trimmer capacitor 81 210 W transistor 2499
Text: E XF .- an AMP company r = RF MOSFET Power Transistor, 2 - 175 MHz 12OW, 28V DU28120T Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
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DU28120T
S-16OpF
DU26120T
transistor c 2499
transistor tj 2499
12OW
capacitor 4 f
XF 020
transistor D 2499
DU28120T
22 pf trimmer capacitor
81 210 W
transistor 2499
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13MM
Abstract: PH3134-2OL transistor f20 PH3134
Text: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors
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PH3134-2OL
13MM
PH3134-2OL
transistor f20
PH3134
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transistor c36
Abstract: wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134
Text: =5= ,-= E -= EF an AMP company * ,- .-z = Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry
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PH3134-11s
MJLLIMET1344)
transistor c36
wacom
wacom connector
transistor j8
f 9234
transistor B 325
PH3134
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Di 762 transistor
Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33
Text: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System
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PH1920-33
lN4245
73050258-S
Di 762 transistor
transistor a015
transistor npn a 1930
wacom connector
wacom
33w NPN
13MM
PH1920-33
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TRANSISTOR Z4
Abstract: No abstract text available
Text: an AMP company Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors
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214-6M
TRANSISTOR Z4
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13MM
Abstract: 817j18
Text: I .-em _- an AMP company Linear Power Transistor, 40W 850 - 1450 MHz Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class AB Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System
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Untitled
Abstract: No abstract text available
Text: E-Series Coupler 902 - 928 MHz ESDC-10-4 V2.00 SM-1 Features ● ● Coupling: +10 dB Typical Surface Mount Specifications @ 25°C Frequency Range 902 - 928 MHz Coupling 902 - 928 MHz Nominal 10 ±0.9 dB Flatness 0.4 dB Main Line Loss 902 - 928 MHz Typical
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ESDC-10-4
ESDC-10-4
ESDC-10-4TR
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Untitled
Abstract: No abstract text available
Text: E-Series Plug-In Mixer 2 - 500 MHz EMK-1H V3.00 R-5 Features ● ● LO Power: +17 dBm Up to +14 dBm RF Specifications @ 25°C Frequency Range RF LO IF 2 - 500 MHz 2 - 500 MHz DC - 500 MHz Conversion Loss dB 4 - 250 MHz 2 - 500 MHz Typical 6.0 7.0 Maximum
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ESQ-2-88
Abstract: S0214
Text: E-Series 2-Way 90° Power Divider 30 - 90 MHz ESQ-2-88 V3.00 Features ● ● R-2 2 Way 90° Specifications @ 25°C Frequency Range 30 - 90 MHz Insertion Loss 30 - 90 MHz Typical 0.6 dB Maximum 1.0 dB Isolation 30 - 90 MHz Typical 23 dB Minimum 20 dB Amplitude Unbalance
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ESQ-2-88
ESQ-2-88
S0214
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MA40135
Abstract: MA40133 ma40131
Text: Silicon Beam Lead Schottky Barrier Diodes MA40130 Series V3.00 Features ● ● ● ● Case Style 965 Planar Construction Surface Oriented Diode Strong Beam Construction Low Noise Figure (Mixer Diodes) Low, Medium and High Barrier Diodes Available Description
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MA40130
MA40133
MA40135
MA40135
ma40131
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AMS117
Abstract: AMS-117
Text: Low Noise Amplifier, 8 dB Gain 10 - 200 MHz AM-/AMC-/AMS-117 V2.00 Features ● ● ● ● FP-2 1.3 dB Typical Midband Noise Figure +30 dBm Typical Midband Intercept Ideal for Broadband IF Applications Fully Hermetic Package AMS-117 PIN 0.015 DIA ±0.005
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AM-/AMC-/AMS-117
AMS-117)
AMS117
AMS-117
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Untitled
Abstract: No abstract text available
Text: Preliminary Specifications Surface Mount Frequency Synthesizer DATA 1005 - 1065 MHz MLS9900-01035 V1.00 Features ● ● ● ● ● Miniature Size Surface Mount Package Electrically Shielded Low Phase Noise Integral Buffer Amplifier Description The MLS9900-01035 frequency synthesizer combines a
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MLS9900-01035
MLS9900-01035
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Untitled
Abstract: No abstract text available
Text: E-Series 3-Way 0° Power Divider 5 - 500 MHz ES-3-1W V3.00 R-1 Features ● ● 3 Way 0° Specifications @ 25°C Frequency Range 5 - 500 MHz Insertion Loss 5 -50 MHz 50 - 250 MHz 250 - 500 MHz Typical 0.4 dB 0.4 dB 0.8 dB Maximum 0.8 dB 1.4 dB 1.4 dB Isolation
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