Untitled
Abstract: No abstract text available
Text: Recommended land Pattern 0.07 1.792 Pin 4 Solder Resist Keep Out 350um dia Solder Contact 350um dia Pin 3 Solder Resist 0.05 1.252 320um 315um 530um Pin 1 Pin 1 marking 0.01 0.31 Top View Pin 2 320um 320um 320um 1252um 75 Trace Width 535um 1071um 0.03 0.68
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350um
320um
315um
530um
320um
1252um
535um
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cm6300
Abstract: CM630 sac105
Text: EMI Filters with ESD Protection for SIM Card Applications CM6300 Product Description The CM6300 is a 3x3, 8-bump EMI filter with ESD protection device for SIM card applications in 0.5mm pitch CSP form factor. It is fully compliant with IEC 61000-4-2. The CM6300 is RoHS II compliant.
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CM6300
CM6300
CM6300/D
CM630
sac105
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FP5509
Abstract: autofocus lens control system in camera dc iris drive cont FP550 DC IRIS Driver I2C
Text: FP5509 fitipower integrated technology lnc. 120mA Current Sinking 10-Bit I2C DAC for VCM Driver Features Description The FP5509 is a single 10-bit DAC with 120mA output current sink capability. It operates from a single 2.7 V to 5.5 V supply. The DAC is controlled
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FP5509
120mA
10-Bit
FP5509
120mA
400kHz.
stabilizatio5509ZCP
autofocus lens control system in camera
dc iris drive cont
FP550
DC IRIS Driver I2C
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Untitled
Abstract: No abstract text available
Text: Portable Electronics AAP662 AAP662 ADVANCED DATA Electret Microphone ECM Pre-Amplifier w/Programmable Filter DESCRIPTION The AAP662 ECM Pre Amplifier is a low gain preamplifier aimed at offering a feature-rich alternative to a typical JFET preamp solution. The performance of
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AAP662
AAP662
1290-B
AADS00036
AA805
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED LED CHIP CE590-200 PRELIMINARY SPECIFICATION OF LED CHIP CE590-200 [ YELLOW ] 1 Commodity Type and Physical Characteristics. 1. Material AlGaInP/GaAs 2. Electrode Top Side P anode) side Bottom Side N (cathode) side 3. Electrode Pattern
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CE590-200
510um
320um
260um
f200um
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ED-714IRP
Abstract: No abstract text available
Text: ED-714IRP AlGaAs/AlGaAs Highspeed IrED Chips 865 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um
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ED-714IRP
105um
320um
180um
335um
x335um
ED-714IRP
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ed-914irp
Abstract: No abstract text available
Text: ED-914IRP AlGaAs/AlGaAs Highspeed IrED Chips 850 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um
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ED-914IRP
105um
320um
180um
335um
335um
100mA
ed-914irp
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ALIVH
Abstract: JESD22-B111 national semiconductor pb-free marking AN-1412 B111 JESD22 gold embrittlement
Text: National Semiconductor Application Note 1412 June 9, 2009 Table of Contents Introduction . Package Construction .
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AN-1412
ALIVH
JESD22-B111
national semiconductor pb-free marking
AN-1412
B111
JESD22
gold embrittlement
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Untitled
Abstract: No abstract text available
Text: 2ES032XXXJL 2ES032XXXJL SERIES TRANSIENT VOLTAGE SUPPRESSORS DESCRIPTION ¾ 2ES032XXXJL series are transient voltage suppressors diode chips for plastic package that fabricated in silicon epitaxial planar technology; ¾ Excellent clamping capability; ¾ Fast response time ;
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2ES032XXXJL
2ES032XXXJL
2ES032XXX
2ES032025JL
2ES032033JL
2ES032050JL
2ES032060JL
2ES032070JL
2ES032120JL
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FP5509
Abstract: autofocus camera actuator
Text: FP5509 fitipower integrated technology lnc. 120mA Current Sinking 10-Bit I2C DAC for VCM Driver Description Features The FP5509 is a single 10-bit DAC with 120mA output current sink capability. It operates from a 2.7V to 5.5V. The DAC is controlled via a 2-wire
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FP5509
120mA
10-Bit
FP5509
400kHz.
FP5509ZCP
autofocus camera actuator
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LSI LOGIC
Abstract: 700UM
Text: Chip Planning w/ Avant! Planet -PL Workbook G11 Copyright LSI Logic Corporation 1999, 2000 All Rights Reserved. Chip Planning w/ Avant! Planet -PL Software Training Workbook (G11) Produced by the Customer Education Group May 2000 Copyright LSI Logic Corporation 1999, 2000. All rights reserved.
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Untitled
Abstract: No abstract text available
Text: ED-714IR AlGaAs/AlGaAs Highspeed IrED Chips 870 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • Highspeed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um
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ED-714IR
105um
320um
180um
335um
335um
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SMD 5pin
Abstract: low voltage Microphone Preamplifier AAP661A AAP661X marking aai 5PIN AAP661BS-M5A-G-LF-TR
Text: Portable Electronics AAP661X AAP661X PRELIMINARY DATA Electret Microphone ECM Pre-Amplifier w/Programmable Filter DESCRIPTION The AAP661X ECM Pre Amplifiers were designed for the recent exclusive use of Plantronics, Inc. of Santa Cruz, CA for high end audio headset
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AAP661X
AAP661X
1290-B
AADS00022
AA661b
SMD 5pin
low voltage Microphone Preamplifier
AAP661A
marking aai 5PIN
AAP661BS-M5A-G-LF-TR
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ED-214IR
Abstract: No abstract text available
Text: ED-214IR AlGaAs/AlGaAs IrED Chips 880 nm Features : Typical Applications : • N side up • Industrial Infrared Equipment Outline Dimensions : Unit: um 335 320 n-Electrode n-AlGaAs epi layer n-Electrode 255 115 335 p-AlGaAs epi layer Emission area p-Electrode
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ED-214IR
115um
320um
255um
335um
335um
ED-214IR
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ALIVH
Abstract: pcb thermal Design guide trace theta layout AN-1412 7x8 64 footprint micro solder ball
Text: National Semiconductor Application Note 1412 May 2006 Table of Contents Introduction . Package Construction .
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AN-1412
ALIVH
pcb thermal Design guide trace theta layout
AN-1412
7x8 64 footprint
micro solder ball
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED LED CHIP CE640-200 PRELIMINARY SPECIFICATION OF LED CHIP CE640-200 [ RED ] 1 Commodity Type and Physical Characteristics. 1. Material AlGaInP/GaAs 2. Electrode Top Side P anode) side Bottom Side N (cathode) side 3. Electrode Pettern
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CE640-200
510um
320um
260um
f200um
80Cdeg
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ED-014IRC
Abstract: GaAs wafer
Text: ED-014IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripherals • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 335 320 p-Electrode p-GaAs epi layer
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ED-014IRC
105um
320um
280um
335um
x335um
ED-014IRC
GaAs wafer
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ED-814IR
Abstract: No abstract text available
Text: ED-814IR AlGaAs/AlGaAs Highspeed IrED Chips 850 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • N side up • High power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um
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ED-814IR
120um
320um
180um
335umx
335um
02OPTOELECTRONIC
ED-814IR
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Untitled
Abstract: No abstract text available
Text: ED-914IR AlGaAs/AlGaAs Highspeed IrED Chips 850 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um
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ED-914IR
105um
320um
180um
335um
x335um
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JESD22-B111
Abstract: ALIVH national semiconductor pb-free marking AN-1412 B111 JESD22 JESD22B111 400um ALIVH PCB
Text: National Semiconductor Application Note 1412 June 2007 Table of Contents Introduction . Package Construction .
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AN-1412
JESD22-B111
ALIVH
national semiconductor pb-free marking
AN-1412
B111
JESD22
JESD22B111
400um
ALIVH PCB
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53A18
Abstract: 30460
Text: K3N4C V,U 1000E-C/W MASK ROM DIE 8M-Bit(1Mx8/ 512Kx16) CMOS Mask ROM FEATURES •Single 5.0V/3.3V/3.0V power supply •Fast Access Time : 100ns (min) for 5.0V/ 3.3V 120ns (min) for 3.0V •x16 or x8 configurable with BHE-pin GENERAL PHYSICAL SPECIFICATIONS
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1000E-C/W
512Kx16)
100ns
120ns
320um
3640um
3640um
140um
53A18
30460
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BUL4147D
Abstract: Electronic ballast NPN transistor Electronic ballast
Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/NPN Power Transistor Wafer 功率晶体管芯片 BUL4147D ●产品特点：击穿电压稳定开关速度快 ● High Voltage, High Switching Speed. ●E-C 极间内置二极管
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BUL4147D
320um
216um
BUL4147D
Electronic ballast
NPN transistor Electronic ballast
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Untitled
Abstract: No abstract text available
Text: PRODUCT GUIDE B. New LCD Driver 1C Code Information S6XXXXXXXX - X X X X 1 (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) (1) System LSI (s) (2) Large Classification: LCD Driver IC (6) (3) Small Classification: A; B; C; D STN (Character Type)
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145um±
180um
200um
220um
180um±
250um±
300um
280um±
300um±
320um
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LA 7376
Abstract: 729E HFA3046 16 PIN ic 810 PNP monolithic Transistor Arrays complementary npn-pnp power transistors hfa3128 TRANSISTOR 7812 1320j ba 9319
Text: HFA3046, HFA3096, HFA3127, HFA3128 S em iconductor October 1998 Data Sheet File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor’s complementary bipolar UHF-1
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HFA3046,
HFA3096,
HFA3127
HFA3128
HFA3046
HFA3096
1-800-4-HARRIS
LA 7376
729E
16 PIN ic 810
PNP monolithic Transistor Arrays
complementary npn-pnp power transistors
TRANSISTOR 7812
1320j
ba 9319
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