Untitled
Abstract: No abstract text available
Text: EMM5081V1B Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.5dBm typ. High Linear Gain: GL=30dB (typ.) Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package (V1B) DESCRIPTION The EMM5081V1B is a MMIC amplifier that contains a three-stages
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EMM5081V1B
50ohm
EMM5081V1B
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EMM5081
Abstract: EMM5081V1B JESD22-A114-C 432E-02 936e 507E-03
Text: EMM5081V1B Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.5dBm typ. ・High Linear Gain: GL=30dB (typ.) ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package (V1B) DESCRIPTION The EMM5081V1B is a MMIC amplifier that contains a three-stages
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EMM5081V1B
EMM5081V1B
Tst05
1906B,
EMM5081
JESD22-A114-C
432E-02
936e
507E-03
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32 v dc 1500ma
Abstract: ka-band amplifier ED-4701 FMM5820X EIAJ ED-4701 305 chip 7490 power amplifier mmic gl 9608
Text: FMM5820X Ka-Band Power Amplifier MMIC FEATURES •High Output Power; Pout = 35.5 dBm Typ. •High Linear Gain; GL = 24 dB(Typ.) •Frequency Band ; 29.5 - 30.0 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5820X is a power amplifier MMIC that contains a fourstages amplifier, internally matched, for standard communications
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FMM5820X
FMM5820X
1906B,
32 v dc 1500ma
ka-band amplifier
ED-4701
EIAJ ED-4701 305
chip 7490
power amplifier mmic
gl 9608
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gl 9608
Abstract: No abstract text available
Text: FMM5820X Ka-Band Power Amplifier MMIC FEATURES •High Output Power; Pout = 35.5 dBm Typ. •High Linear Gain; GL = 24 dB(Typ.) •Frequency Band ; 29.5 - 30.0 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5820X is a power amplifier MMIC that contains a fourstages amplifier, internally matched, for standard communications
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FMM5820X
FMM5820X
1906B,
gl 9608
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FMM5820QH
Abstract: power amplifier mmic
Text: FMM5820QH Ka-Band Power Amplifier MMIC FEATURES •High Output Power: P1dB = 36.0 dBm Typ. •High Linear Gain: GL = 23.0 dB(Typ.) •Frequency Band: 29.5 - 30.0 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5820QH is a power amplifier MMIC that contains a fourstage amplifier, internally matched, for standard communications
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FMM5820QH
FMM5820QH
1906B,
power amplifier mmic
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dfe2520
Abstract: led strobe light circuit diagram XFL3010 AN-617 FDSD0312 M100 ADP1650 BIT 3715
Text: 1.5 A LED Flash Driver with I2C-Compatible Interface ADP1650 FEATURES APPLICATIONS Camera-enabled cellular phones and smart phones Digital still cameras, camcorders, and PDAs FUNCTIONAL BLOCK DIAGRAM INPUT VOLTAGE = 2.7V TO 5.0V 10µF 1.0µH TX1/TORCH VIN
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ADP1650
12-ball
ADP1650ACBZ-R7
ADP1650CB-EVALZ
CB-12-42
dfe2520
led strobe light circuit diagram
XFL3010
AN-617
FDSD0312
M100
ADP1650
BIT 3715
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EMM5077VU
Abstract: RO4003 EMM5077
Text: EMM5077VU C-Band Power Amplifier MMIC FEATURES •High Output Power: Pout = 31.0 dBm Typ. •High Linear Gain: GL = 26 dB(Typ.) •Broad Band: 3.4 – 5.0 GHz •Impedance Matched Zin/Zout = 50Ω •Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION
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EMM5077VU
EMM5077VU
REC0158
1906B,
RO4003
EMM5077
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Untitled
Abstract: No abstract text available
Text: EMM5077VU C-Band Power Amplifier MMIC FEATURES •High Output Power: Pout = 31.0 dBm Typ. •High Linear Gain: GL = 26 dB (Typ.) •Broad Band: 3.4 to 5.0 GHz •Impedance Matched Zin/Zout = 50ohm •Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION
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EMM5077VU
50ohm
EMM5077VU
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EMM5077
Abstract: EMM5077VU ED-4701 RO4003 C100p
Text: ES/EMM5077VU Preliminary C-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 31.0 dBm Typ. •High Gain; GL = 26 dB(Typ.) •Wide Frequency Band ; 3.4 – 5.0 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The ES/EMM5077VU is a power amplifier MMIC that
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ES/EMM5077VU
ES/EMM5077VU
1906B,
EMM5077
EMM5077VU
ED-4701
RO4003
C100p
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EMM5077
Abstract: EMM5077VU RO4003 25C3422 PIN20 EMM5077VUT
Text: EMM5077VU C-Band Power Amplifier MMIC FEATURES •High Output Power: Pout = 31.0 dBm Typ. •High Linear Gain: GL = 26 dB (Typ.) •Broad Band: 3.4 to 5.0 GHz •Impedance Matched Zin/Zout = 50ohm •Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION
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EMM5077VU
50ohm
EMM5077VU
EMM5077
RO4003
25C3422
PIN20
EMM5077VUT
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X-band amplifier
Abstract: 462 008 0004 00 AF
Text: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 9.5~13.3GHz Impedance Matched Zin/Zout=50 Device DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the
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EMM5068X
EMM5068X
X-band amplifier
462 008 0004 00 AF
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Untitled
Abstract: No abstract text available
Text: Preliminary ES/SGN2935-300D-R FEATURES High Voltage - High Power GaN-HEMT for Radar •High Voltage Operation : VDS=50V •High Power : 300W min. @ Pin=15.8W (42dBm) •High Efficiency: 48%(typ.) @ Pin=15.8W (42dBm) •Broad Band: 2.9 to 3.5GHz • Impedance Matched Zin/Zout = 50 ohm
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ES/SGN2935-300D-R
42dBm)
ES/SGN2935-300D-R
200msec,
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EMM5068X
Abstract: X-band amplifier SCL 1058 x-band mmic MMIC X-band amplifier ED-4701 emm5068
Text: EMM5068X X-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5~13.3GHz ・Impedance Matched Zin/Zout=50Ω Device DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage
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EMM5068X
EMM5068X
X-band amplifier
SCL 1058
x-band mmic
MMIC X-band amplifier
ED-4701
emm5068
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1794-VHSC
Abstract: 1794-PS13 Allen-Bradley 1794-irt8 manual Allen-Bradley 1794-irt8 1794-IRT8 specification 1794-TB3G WIRING DIAGRAM 1794-IRT8 1794-IE8 Allen-Bradley 1794-of4i manual Allen-Bradley 1794-ie8 manual
Text: Technical Data FLEX I/O and FLEX Integra 1794 Series and 1793 Series Flexible, Inexpensive, / ; ,270 DQG )/(; ,QWHJUD70 DUH IOH[LEOH ORZFRVW PRGXODU ,2 V\VWHPV and Compact IRU GLVWULEXWHG DSSOLFDWLRQV WKDW RIIHU DOO WKH IXQFWLRQV RI ODUJHU UDFNEDVHG ,
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QWHJUD70
1794-VHSC
1794-PS13
Allen-Bradley 1794-irt8 manual
Allen-Bradley 1794-irt8
1794-IRT8 specification
1794-TB3G WIRING DIAGRAM
1794-IRT8
1794-IE8
Allen-Bradley 1794-of4i manual
Allen-Bradley 1794-ie8 manual
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ISL8240
Abstract: ISL6840 ISL21060
Text: P WERING INFRASTRUCTURE Telecom/Datacom, Wired Networks and Data Storage P WERING INFRASTRUCTURE The increased amount of data and video all of which can be configured using Intersil’s being transmitted via the cloud has placed PowerNavigator — the industry’s most
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LC-113
ISL8240
ISL6840
ISL21060
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isl95836
Abstract: ISL95520 ISL95833 ISL95835 VR126 isl6262 IRS 4 Channel Integrated Class D Audio Driver IC with PWM Modulator ISL912 0/VR126 ISL91106
Text: P WERING CONSUMER ELECTRONICS Tablets, Smartphones, Smart Watch, Notebook Computers P WERING CONSUMER The power management requirements of efficiency and power dense solutions that mobile devices are becoming more complex increase the battery life of devices and systems
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LC-114
isl95836
ISL95520
ISL95833
ISL95835
VR126
isl6262
IRS 4 Channel Integrated Class D Audio Driver IC with PWM Modulator
ISL912
0/VR126
ISL91106
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RMDA29000
Abstract: RMPA29200 2 Watt Power Amplifier
Text: RMPA29200 29–31 GHZ 2 Watt Power Amplifier MMIC General Description Features The Fairchild Semiconductor’s RMPA29200 is a high efficiency power amplifier designed for use in point to point and point to multi-point radios, and various communications applications. The RMPA29200 is a 3-stage GaAs
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RMPA29200
RMPA29200
33dBm
RMDA29000
2 Watt Power Amplifier
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Untitled
Abstract: No abstract text available
Text: RMPA29200 29–31 GHZ 2 Watt Power Amplifier MMIC General Description Features The Fairchild Semiconductor’s RMPA29200 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The
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RMPA29200
RMPA29200
33dBm
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4000 WATT amplifier diagram
Abstract: RAYTHEON RMDA29000 RMPA29200 power amplifier mmic
Text: RMPA29200 29-31 GHz 2 Watt Power Amplifier MMIC ADVANCED INFORMATION Description Features The Raytheon RMPA29200 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA29200 is a 3-stage
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RMPA29200
RMPA29200
4000 WATT amplifier diagram
RAYTHEON
RMDA29000
power amplifier mmic
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Untitled
Abstract: No abstract text available
Text: RMPA29200 29–31 GHZ 2 Watt Power Amplifier MMIC General Description Features The Fairchild Semiconductor’s RMPA29200 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The
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RMPA29200
33dBm
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AUTOMATIC ROOM LIGHT CONTROLLER ppt
Abstract: coin operated mobile phone charger Coin Based Mobile Phone Charger scu RX2 pin DIAGRAM sec 222M se coin operated mobile phone charger circuit diagram transistor smd l33 circuit diagram for Coin based mobile battery charger cpu coin selector active matrix lcd module 12v dc 170ma
Text: Freescale Semiconductor Advance Information Document Number: SC900841 Rev. 2.0, 2/2011 Ultra-Mobile Platform PMIC 900841 The 900841 is a high-efficiency, Power Management Integrated Circuit PMIC , capable of providing all operating voltages for ultramobile platforms through its 29 voltage rails. It has nine switching power
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SC900841
22-channel
AUTOMATIC ROOM LIGHT CONTROLLER ppt
coin operated mobile phone charger
Coin Based Mobile Phone Charger scu
RX2 pin DIAGRAM
sec 222M se
coin operated mobile phone charger circuit diagram
transistor smd l33
circuit diagram for Coin based mobile battery charger
cpu coin selector
active matrix lcd module 12v dc 170ma
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A29200
Abstract: power amplifier mmic
Text: RMPA29200 29-31 GHz 2 Watt Power Amplifier MMIC ADVANCED INFORMATION Description Features The RMPA29200 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA29200 is a 3-stage
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RMPA29200
RMPA29200
A29200
power amplifier mmic
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RAYTHEON
Abstract: RMPA27000 power amplifier mmic
Text: RMPA27000 27 - 29 GHz 1.8 Watt Power Amplifier MMIC Description Features The Raytheon RMPA27000 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA27000 is a 3-stage
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RMPA27000
RMPA27000
RAYTHEON
power amplifier mmic
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2SD1781KGP
Abstract: transistor D9C
Text: CHENMKO ENTERPRISE CO.,LTD 2SD1781KGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE 3 (2) .055 (1.40) .047 (1.20) .103 (2.64)
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2SD1781KGP
OT-23
-55OC
2SD1781KGP
transistor D9C
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