robot control
Abstract: No abstract text available
Text: Ultra-Low VCE sat IGBT with Diode IXGH 31N60U1 VCES IC25 VCE(sat) = 600 V = 40 A = 1.8 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient
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31N60U1
O-247
robot control
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31N60U1
Abstract: No abstract text available
Text: Ultra-Low VCE sat IGBT with Diode IXGH 31N60U1 VCES IC25 VCE(sat) Maximum Ratings TO-247 AD = 600 V = 40 A = 1.8 V Combi Pack Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM
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31N60U1
O-247
31N60U1
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b263
Abstract: 19 247 V 4836 v 4836 HJC.1
Text: aixYs Ultra-Low V IGBT with Diode IXGH 31N60U1 Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V v GES Continuous ±20 V v GEM T ransient ±30 V ^C2S Tc = 25-C 40 A ^C90 Tc = 90°C 31 A ^CM
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31N60U1
O-247
B2-63
b263
19 247 V 4836
v 4836
HJC.1
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40n80
Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18
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5-10A
52-14N01
52-16N01
55-12N
55-14N07
55-18N
60-08N
60-16N
62-08N
62-12N
40n80
13NB0
60N60
dsei 20-12
33N120
VUO 35-12 N 0 7
DS117-12A
DS117-12
26n60
4410PI
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SMD diode b24
Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64
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12N100
O-220
O-263
O-247
O-247
T0-204
30N30/.
40N30/.
31N60
SMD diode b24
diode b26
smd DIODE B28
20N60BU1
smd diode b23
60n60 igbt smd
B292
12n60c
SMD diode B2
b26 diode
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40n80
Abstract: IXGH40N60 38N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A
Text: Insulated Gate Bipolar Transistors IGBT 4^ r/ioei fType VCE(sat) max. Cto. typ. typ. A V pF pP 20 40 40 50 76 75 75 10 20 31 30 38 40 60 2.5 2.5 1.8 2.5 1.8 2.5 1.8 750 1500 1500 2800 2500 4500 4000 30 40 40 70 70 60 100 20 34 50 10 17 25 3.5 750 1500 2750
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10N60
20N60
31N60
30N60
38N60
40N60
60N60
10N100
17N100
25N100
40n80
IXGH40N60
12N60U1
40N80A
50N60AU1
20n60 igbt
igbt 20n60
60n60 ixgh
IXGA24N60A
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mm036
Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA
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DSAI35-12A
5-16A
5-18A
5-12A
2-06A
12-1OA
2-12A
2x30-Q4C
mm036
ml075-12
MM036-12
mm036-16
mm075-12io1
mm062
DSI 12-06A
MDD95-16N1B
ME03
21N100
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12n60u
Abstract: sta 750 tic 263a
Text: , IGBT with Diode Combi Pack G series with high gain type VCES .Tjm= 1:S0oO ► New : >• >>>> ► ► ► ► ► IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH
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