RGP30J
Abstract: Rgp30m
Text: RGP30A thru RGP30M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.2 µA
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RGP30A
RGP30M
MIL-S-19500
2002/95/EC
2002/96/EC
DO-201AD,
08-Apr-05
RGP30J
Rgp30m
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V60100C
Abstract: No abstract text available
Text: V60100C New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.360 V at IF = 5 A FEATURES • Trench MOS Schottky Technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation
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V60100C
O-220AB
2002/95/EC
2002/96/EC
08-Apr-05
V60100C
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SSB44-101
Abstract: SSB44
Text: SSB43L & SSB44 Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low forward voltage drop
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SSB43L
SSB44
J-STD-020C
DO-214AA
2002/95/EC
2002/96/EC
J-STD-002B
JESD22-B102D
08-Apr-05
SSB44-101
SSB44
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Untitled
Abstract: No abstract text available
Text: SS2H9 & SS2H10 Vishay General Semiconductor High-Voltage Surface Mount Schottky Rectifier High Barrier Technology for improved high temperature performance FEATURES • Low profile package • Guardring for overvoltage protection • Ideal for automated placement
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SS2H10
J-STD-020C
2002/95/EC
2002/96/EC
DO-214AA
08-Apr-05
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SSC53L
Abstract: No abstract text available
Text: SSC53L & SSC54 New Product Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency
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SSC53L
SSC54
J-STD-020C
DO-214AB
2002/95/EC
2002/96/EC
J-STD-002B
08-Apr-05
SSC53L
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Untitled
Abstract: No abstract text available
Text: SS3H9 & SS3H10 New Product Vishay General Semiconductor High-Voltage Surface Mount Schottky Rectifier High Barrier Technology for improved high temperature performance FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection
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SS3H10
J-STD-020C
2002/95/EC
2002/96/EC
DO-214AB
08-Apr-05
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marking code s4 SMc
Abstract: No abstract text available
Text: SS32 thru SS36 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop
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J-STD-020C
2002/95/EC
2002/96/EC
DO-214AB
J-STD-002B
JESD22-B102D
08-Apr-05
marking code s4 SMc
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6201A
Abstract: No abstract text available
Text: Features • • • • • • • • • • • • • • • Main Supply 3.0V to 3.6V Independent 2.5V to 3.6V Auxiliary Supply for Backup Section Internal State Machine for Startup 25 mA/1.8V-2.75V Linear Low Drop Out Regulator with High PSRR and Low Noise
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6201B
31-Mar-06
6201A
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JS29F08G08
Abstract: 29f04g08 JS29F 29F08G08 intel nand flash SS72 intel 29F intel nand flash memory INTEL FLASH MEMORY 29F intel nand
Text: Intel SS72 NAND Flash Memory JS29F02G08AANB3, JS29F04G08BANB3, JS29F08G08FANB3 Product Features Organization: Basic NAND flash command set: Read performance: New commands: — — — Page size: x8: 2,112 bytes 2,048 + 64 bytes ; x16: 1,056 words (1,024 + 32 words)
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JS29F02G08AANB3,
JS29F04G08BANB3,
JS29F08G08FANB3
1000pc
JS29F04G08BANB3
29F04G08BANB3
JS29F08G08
29f04g08
JS29F
29F08G08
intel nand flash
SS72
intel 29F
intel nand flash memory
INTEL FLASH MEMORY 29F
intel nand
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3e marking
Abstract: VJ1206 VJ1210 VJ1812 VJ2220 VJ2225
Text: VJ RuGGed Chip Vishay Vitramon Multilayer Ceramic Chip Capacitors for Power Supply Applications FEATURES • Rugged, surface-mountable, multilayer ceramic capacitors, made with Advanced X7R dielectric RoHS • Efficient low-power consumption, ripple current
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08-Apr-05
3e marking
VJ1206
VJ1210
VJ1812
VJ2220
VJ2225
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smd transistor w1a
Abstract: smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor
Text: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the
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CX-49G,
CX-40F
HC-49/U
HC-49U-S
31-Dec-04
CX-49L
smd transistor w1a
smd transistor w1a 25
W1A smd transistor
smd transistor gz
smd transistor marking A14
SMD W1A transistor
AVX tantalum marking
MARKING w1a SOT-23
smd transistor w1a 50
marking code NJ SMD Transistor
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smd transistor w1a
Abstract: w2f smd transistor SMD W1A SMD W2A smd transistor marking w2a W1A smd code marking code W2F smd transistor w1a 95 DATASHEET SMD W2f smd code W2F
Text: This web update contains information on RoHS compliance legislative requirements, product family status and recommended soldering profiles RoHS/ELV Compliance by Product Family Rev 4: July ‘06 RoHS Compliance Requirements AVX compliance introduction to terms and Product Family Status:
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260oC
250oC
smd transistor w1a
w2f smd transistor
SMD W1A
SMD W2A
smd transistor marking w2a
W1A smd code
marking code W2F
smd transistor w1a 95 DATASHEET
SMD W2f
smd code W2F
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ST 9427
Abstract: K025
Text: MICRO SWITCH ASSEMBLYPUSHBUTTON SWITCH F p s c p o rrr Il l in o is A DIVISION o r h o m e v w s l l re s . M r « . G O B* SIM * 7 0 2 P B S E R ÍE S C H A R T I .0 7 2 W IDE X .0 3 8 D E E P co UJ P L A S T IC 50 SPHERE R REF KEYWAY 1 5 / 3 2 - 3 2 NS T H R E A D TO WITHIN .0 9 4
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702PB
CO-94273
31MAR06
59REF
MOPIR77
rORCK----30
ST 9427
K025
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Untitled
Abstract: No abstract text available
Text: 7 TH IS DRAWING IS U N P U B LIS H E D . RELEASED ALL COPYRIGHT - FOR 6 5 4 3 2 PUBLICATION RIGHTS LOC RESERVED. D IST CM BY TYCO ELECTRONICS CORPORATION. R E V IS IO N S LTR DE SC RIPTIO N Y REV PER ECO—0 5 —01 5607 APPLY TO SOLDER MEASURED AT SURFACE
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31MAR06
DU0383-4
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