ARLON-GX-0300-55-22
Abstract: Motorola MRF183 MRF183R1 MRF183S MRF183SR1
Text: MOTOROLA Order this document by MRF183/D SEMICONDUCTOR TECHNICAL DATA MRF183R1 MRF183SR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF183/D
MRF183R1
MRF183SR1
MRF183R1
ARLON-GX-0300-55-22
Motorola MRF183
MRF183S
MRF183SR1
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c19a
Abstract: motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373R1 MRF373SR1
Text: MOTOROLA RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.
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MRF373R1
MRF373SR1
MRF373R1
MRF373/D
c19a
motorola rf power
chip resistor 1206
BUY13
C14A
LDMOS push pull
MRF373
MRF373 PUSH PULL
MRF373SR1
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MRF6522-5
Abstract: MOSFET J132 mosfet j142 J132 mosfet 5r1 mosfet transistor transistor zo 607 ZO 607 MA MRF6522-5R1 smd transistor 2x 4 581 transistor motorola
Text: MOTOROLA RF Power Field Effect Transistor MRF6522-5R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A and Class AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–5R1 has been specifically designed for use in Communications Network GSM base stations. The
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MRF6522-5R1
MRF6522
31JUL04
31JAN05
MRF6522-5
MOSFET J132
mosfet j142
J132 mosfet
5r1 mosfet transistor
transistor zo 607
ZO 607 MA
MRF6522-5R1
smd transistor 2x 4
581 transistor motorola
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Untitled
Abstract: No abstract text available
Text: MOTOROLA The RF MOSFET Line MRF183 MRF183S MRF183SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF183/D
MRF183
MRF183S
MRF183SR1
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MRF186
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
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MRF186/D
MRF186
DEVICEMRF186/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use
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MRF6522
31JUL04
31JAN05
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MRF186
Abstract: C10B4 motorola MOSFET 935 Z11-Z16 RF power amplifier MHz MRF186 equivalent
Text: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
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MRF186/D
31JAN05
MRF186
31JUL04
MRF186
C10B4
motorola MOSFET 935
Z11-Z16
RF power amplifier MHz
MRF186 equivalent
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Power MRF182 Field Effect Transistors MRF182S, R1 N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz 30 W, 1.0 GHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs
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MRF182
MRF182S,
MRF182S
MRF182SR1
MRF182)
MRF182S)
31JAN05
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Untitled
Abstract: No abstract text available
Text: MOTOROLA The RF MOSFET Line MRF183 MRF183S MRF183SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF183
MRF183S
MRF183SR1
31JUL04
31JAN05
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z14b
Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A
Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF374/D
MRF374
z14b
RO3010
C14A
C12A
C12B
C13B
MRF374
r1a transistor
VJ2225Y
Z14A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF184/D
MRF184
MRF184SR1
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OF4455
Abstract: OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P
Text: Philips Semiconductors Product Discontinuation Notice DN53 Exhibit A June 30, 2004 SEE DN53 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.
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Code357A3
30-Jun-04
VY27357A3
OF4455
OT239
philips AS2000P
triac ot239
phx4nq60e
of4453
TDA8855H
OF4455 diode
OF4453 diode
AS2000P
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MRF184
Abstract: MRF184R1 MRF184SR1
Text: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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945roperty
MRF184R1
MRF184SR1
MRF184/D
MRF184
MRF184SR1
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thermistor r5t
Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010
Text: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF373S
MRF373
31JUL04
31JAN05
thermistor r5t
chip resistor 1206
c19a
S1239
MOTOROLA P
C3B Kemet
bc17a
GX-0300-55
R7B Connector
RO3010
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j608
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use in Communications Network GSM base stations. The package offers the
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MRF6522
Inductance66
31JUL04
31JAN05
j608
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RO3010
Abstract: Z14B C14A thermistor r5t MRF374 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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MRF374
31JUL04
31JAN05
RO3010
Z14B
C14A
thermistor r5t
470 860 mhz PCB
transistor R1A
C14B
r1a transistor
transistor z2b
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MOTOROLA SCR 1725
Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
Text: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1
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DL110/D
MOTOROLA SCR 1725
732 160 16 capactor for video card
matsushita compressor capacitor
MATSUSHITA compressor codes
sansui tv diagram
manhattan CATV
arm cc 1800 39p
MRF373 PUSH PULL
IC 741 OPAMP DATASHEET
MPS901
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF185/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device
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MRF185/D
MRF185
DEVICEMRF185/D
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Vj3640Y
Abstract: transistor L1A
Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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MRF374/D
MRF374
Vj3640Y
transistor L1A
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SMD W2A
Abstract: ntc 50-20 varistor W1A smd code SMD W1A SMD W2A 56 W2A smd smd code W2F smd marking code w1a for all smd components W2F AVX HQ
Text: TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors GENERAL DESCRIPTION The AVX TransGuard® Transient Voltage Suppressors TVS with unique high-energy multilayer construction represents state-of-the-art overvoltage circuit protection. Monolithic
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250oC
260oC)
260oC
SMD W2A
ntc 50-20 varistor
W1A smd code
SMD W1A
SMD W2A 56
W2A smd
smd code W2F
smd marking code w1a
for all smd components W2F
AVX HQ
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MRF185
Abstract: transistor motorola 246
Text: MOTOROLA Order this document by MRF185/D The RF MOSFET Line LAST SHIP 31JAN05 MRF185 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode
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MRF185/D
31JAN05
MRF185
MRF185
transistor motorola 246
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MRF184
Abstract: MRF184R1 MRF184SR1 173 MHz RF CHIP
Text: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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945roperty
MRF184R1
MRF184SR1
MRF184/D
MRF184
MRF184SR1
173 MHz RF CHIP
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MRF184
Abstract: MRF184S MRF184SR1 173 MHz RF CHIP
Text: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF184/D
MRF184
MRF184S
MRF184SR1
173 MHz RF CHIP
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IRL 724
Abstract: IRL 724 N motorola MOSFET 935 MRF183 MRF183S MRF183SR1
Text: MOTOROLA The RF MOSFET Line MRF183 MRF183S MRF183SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF183
MRF183S
MRF183SR1
MRF183)
MRF183S
MRF183
MRF183/D
31JUL04
IRL 724
IRL 724 N
motorola MOSFET 935
MRF183SR1
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