Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC HM ALL RIGHTS RESERVED. D 23.45 [ .923 ] 1 REVISIONS DIST 00 P LTR DESCRIPTION DATE DWN APVD A RLSD; ECO-11-010701 31MAY2011 GG RA B REV; ECO-13-016164 15OCT2013
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Original
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ECO-11-010701
31MAY2011
ECO-13-016164
15OCT2013
YELLO111408-7
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PDF
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2N62K3
Abstract: STD2N62K3 STP2N62K3
Text: STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3 N-channel 620 V, 3 Ω, 2.2 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB Order codes VDSS RDS on max ID PTOT 3 2 3 STB2N62K3
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Original
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STB2N62K3,
STD2N62K3,
STF2N62K3,
STP2N62K3,
STU2N62K3
O-220FP,
O-220
STB2N62K3
STD2N62K3
STF2N62K3
2N62K3
STP2N62K3
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PDF
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GP20
Abstract: J-STD-002 RGP20A RGP20J
Text: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 RGP20A thru RGP20J Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction
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Original
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31-May-2011
RGP20A
RGP20J
MIL-S-19500
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
GP20
J-STD-002
RGP20J
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PDF
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COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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Original
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vse-db0001-1102
I8262
COLOR tv tube charger circuit diagrams
MBRF 1015 CT
smd diode S4 67A
DO-213AB smd diode color marking code
vacuum tube applications data book
V40100PG
diode 719 b340a
EQUIVALENT 31gf6
SB050 D 168
s104 diode 87a
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PDF
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Untitled
Abstract: No abstract text available
Text: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 GP20A thru GP20J Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction
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Original
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31-May-2011
GP20A
GP20J
MIL-S-19500
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: STH260N6F6-2 N-channel 60 V, 0.0016 Ω, 180 A H²PAK-2 STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 0.002 Ω 180 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness
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Original
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STH260N6F6-2
STH26
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PDF
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texas instruments uart
Abstract: No abstract text available
Text: MSP430F543xA, MSP430F541xA www.ti.com SLAS655B – JANUARY 2010 – REVISED OCTOBER 2010 MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active
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Original
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MSP430F543xA,
MSP430F541xA
SLAS655B
texas instruments uart
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PDF
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Untitled
Abstract: No abstract text available
Text: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 DTV56, DTV56F, DTV56B Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • High breakdown voltage capability
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Original
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31-May-2011
DTV56,
DTV56F,
DTV56B
O-220AC
ITO-220AC
DTV56
DTV56F
J-STD-020,
O-263AB
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 96152A IRF7754GPbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free Halogen-Free VDSS RDS(on) max ID -12V 25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V
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Original
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6152A
IRF7754GPbF
IRF7754GTRPBF
31-May-2011
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PDF
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Untitled
Abstract: No abstract text available
Text: TPS728xx Series www.ti.com SBVS095 – AUGUST 2007 200mA Low-Dropout Linear Regulator with Pin-Selectable Dual-Voltage Level Output FEATURES 1 • • • • 2 • • • • • Very Low Dropout: 230mV Typical at 200mA 3% Accuracy Over Load/Line/Temperature
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Original
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TPS728xx
SBVS095
200mA
230mV
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PDF
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Untitled
Abstract: No abstract text available
Text: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 CGP20, DGP20 Vishay General Semiconductor Miniature Clamper/Damper Glass Passivated Rectifier FEATURES • Superectifier structure • Cavity-free glass passivated junction SUPERECTIFIER
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Original
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31-May-2011
CGP20,
DGP20
MIL-S-19500
22-B106
DO-204AC
DO-15)
2002/95/EC
2002/96/EC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 BYS459-1500S, BYS459F-1500S & BYS459B-1500S Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • Fast reverse recovery time
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Original
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31-May-2011
BYS459-1500S,
BYS459F-1500S
BYS459B-1500S
O-220AC
ITO-220AC
BYS459-1500S
J-STD-020,
O-263AB
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PDF
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Untitled
Abstract: No abstract text available
Text: MSP430F543xA, MSP430F541xA www.ti.com SLAS655B – JANUARY 2010 – REVISED OCTOBER 2010 MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active
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Original
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MSP430F543xA,
MSP430F541xA
SLAS655B
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PDF
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Untitled
Abstract: No abstract text available
Text: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 SB320A thru SB360A Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching
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Original
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31-May-2011
SB320A
SB360A
DO-201AD
22-B106
2002/95/EC
2002/96/EC
11-Mar-11
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 DTV32, DTV32F, DTV32B Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • High breakdown voltage capability
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Original
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31-May-2011
DTV32,
DTV32F,
DTV32B
O-220AC
ITO-220AC
DTV32
DTV32F
J-STD-020,
O-263AB
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PDF
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Untitled
Abstract: No abstract text available
Text: STH260N6F6-2 N-channel 60 V, 1.7 mΩ typ., 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet — production data Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 2.4 mΩ 180 A • Low gate charge ■ Very low on-resistance
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Original
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STH260N6F6-2
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PDF
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Untitled
Abstract: No abstract text available
Text: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 BYS459-1500, BYS459F-1500 & BYS459B-1500 Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • Fast reverse recovery time
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Original
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31-May-2011
BYS459-1500,
BYS459F-1500
BYS459B-1500
O-220AC
ITO-220AC
BYS459-1500
J-STD-020,
O-263AB
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PDF
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Untitled
Abstract: No abstract text available
Text: TPS728xx Series www.ti.com SBVS095 – AUGUST 2007 200mA Low-Dropout Linear Regulator with Pin-Selectable Dual-Voltage Level Output FEATURES 1 • • • • 2 • • • • • Very Low Dropout: 230mV Typical at 200mA 3% Accuracy Over Load/Line/Temperature
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Original
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TPS728xx
SBVS095
200mA
230mV
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PDF
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TPD4E001DRSR
Abstract: No abstract text available
Text: TPD4E001 SLLS682F – JULY 2006 – REVISED MAY 2011 www.ti.com 4-CHANNEL ESD PROTECTION ARRAY WITH 1.5-pF IO CAPACITANCE Check for Samples: TPD4E001 FEATURES • 1 • 2 • • • • • • • 4-Channel ESD Clamp Array to Enhance System-Level ESD Protection
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Original
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TPD4E001
SLLS682F
IEC61000-4-2
15-kV
8/20-us
TPD2E001,
TPD3E001,
TPD6E001
TPD4E001DRSR
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PDF
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sb160a
Abstract: SB140A
Text: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 SB120A thru SB160A Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching
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Original
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31-May-2011
SB120A
SB160A
22-B106
2002/95/EC
2002/96/EC
DO-204AL
DO-41)
11-Mar-11
sb160a
SB140A
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PDF
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7531 standard
Abstract: ST marking so-8 SLVU2.8-8A1 so-8 marking STMicroelectronics STMicroelectronics marking code date SO-8 marking ZZ 3M Philippines 78MG
Text: SLVU2.8 Low voltage unit for Gigabit Ethernet protection Features • Peak pulse current : IPP = 30 A 8/20 µs ■ Low capacitance : Ctyp = 1.5 pF ■ Stand-off voltage : VR = 2.8 V ■ Low leakage current : IRmax = 0.2 µA ■ ECOPACK 2 compliant component
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PDF
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Untitled
Abstract: No abstract text available
Text: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 DTV56, DTV56F, DTV56B Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • High breakdown voltage capability
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Original
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31-May-2011
DTV56,
DTV56F,
DTV56B
O-220AC
ITO-220AC
DTV56
J-STD-020,
O-263AB
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PDF
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Untitled
Abstract: No abstract text available
Text: Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011 DTV32, DTV32F, DTV32B Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • High breakdown voltage capability
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Original
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31-May-2011
DTV32,
DTV32F,
DTV32B
O-220AC
ITO-220AC
DTV32
DTV32F
J-STD-020,
O-263AB
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION 5 6 7 2 3 4 - TE CONNECTIVITY REVISIONS L0C DIST AA 00 ALL RIGHTS RESERVED. P ECHANICAL: LTR DESCRIPTION DATE DWN APVD 3 ADD A DASH NUMBER 2- 1840801-1 31MAY2011 PP LJ A ECO—11—017525 01SEP2011 RL
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OCR Scan
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01SEP2011
30ulNCH
50ulNCH
50ulNCH
L2010
MAG45
726P11ET
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PDF
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