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    318E Search Results

    318E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R7F701318EAFP Renesas Electronics Corporation High-end Automotive Microcomputers for Chassis System Visit Renesas Electronics Corporation
    MAX3318ECPW Texas Instruments 2.5-V 460-KBPS RS-232 Transceiver with IEC 61000-4-2 ESD-Protection 20-TSSOP 0 to 70 Visit Texas Instruments Buy
    MAX3318EIPWR Texas Instruments 2.5-V 460-KBPS RS-232 Transceiver with IEC 61000-4-2 ESD-Protection 20-TSSOP -40 to 85 Visit Texas Instruments Buy
    TRS3318ECDBR Texas Instruments 2.5-V 460-Kbps RS-232 Transceiver With +/-15-kV ESD Protection 20-SSOP 0 to 70 Visit Texas Instruments Buy
    TRS3318EIPW Texas Instruments 2.5-V 460-Kbps RS-232 Transceiver With +/-15-kV ESD Protection 20-TSSOP -40 to 85 Visit Texas Instruments Buy
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    318E Price and Stock

    Maxim Integrated Products DS1318E-T-R

    IC RTC ELAPSED CNT PAR 24TSSOP
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    DigiKey DS1318E-T-R Cut Tape 1,000 1
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    DS1318E-T-R Digi-Reel 1,000 1
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    DS1318E-T-R Reel 1,000 1,000
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    • 10000 $3.4125
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    Nihon Dempa Kogyo Co Ltd NSC5318E-49.58M

    XTAL OSC TCXO 49.5800MHZ SMD
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    DigiKey NSC5318E-49.58M Cut Tape 990 1
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    NSC5318E-49.58M Digi-Reel 990 1
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    SiTime Corporation SIT9201AC-S3-18E-50.000000G

    MEMS OSC XO 50.0000MHZ H/LV-CMOS
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    DigiKey SIT9201AC-S3-18E-50.000000G Digi-Reel 372 1
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    SIT9201AC-S3-18E-50.000000G Cut Tape 372 1
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    SIT9201AC-S3-18E-50.000000G Reel 250 250
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    Microchip Technology Inc RE46C318E8F

    IC DRIVER HORN PIEZO W/BO 8DIP
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    DigiKey RE46C318E8F Tube 53 1
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    Newark RE46C318E8F Bulk 540
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    Microchip Technology Inc RE46C318E8F Tube 4,680 29 Weeks
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    TME RE46C318E8F 1
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    NAC RE46C318E8F Tube 3,720 1
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    Master Electronics RE46C318E8F
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    Vishay Sprague TVA1318-E3

    CAP ALUM 1500UF 50V AXIAL TH
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    DigiKey TVA1318-E3 Bulk 20 1
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    318E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MAC12SM

    Abstract: MCR100-8 thyristor C106M MAC12N Mcr22-8 301 maC97A8 MCR106-6 MAC22 mac97
    Text: SCRs Silicon Controlled Rectifiers Style 4 K A K K G TO−92 Note 1 (TO−226AA) Case 029 Style 10 0.8 30 2N5060 60 2N5061 100 2N5062 200 2N5064 100 MCR100−3 200 MCR100−4 400 MCR100−6 600 MCR100−8 200 A SOT−223 Case 318E Style 10 G A K TO−225AA


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    O-226AA) 2N5060 2N5061 2N5062 2N5064 MCR100-3 MCR100-4 MCR100-6 MCR100-8 OT-223 MAC12SM MCR100-8 thyristor C106M MAC12N Mcr22-8 301 maC97A8 MCR106-6 MAC22 mac97 PDF

    MT108

    Abstract: MMFT108T1
    Text: MOTOROLA SEMICONDUCTOR ~ w TECHNICAL Order this document byMMH108T1/D DATA Field Effect ~ansistor MMFTI08TI N-Channel Enhancement-Mode Logic Level SOT-223 TMOS- 2,4 DRAIN 1 GATE @ CASE 318E+4, STVLE 3 SOT-223 ~0-261AA MAXIMUM RATINGS I Rating I Drain-t&SourceVoltage


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    byMMH108T1/D MMFTI08TI OT-223 0-261AA) MT108 602-2H609 108T1/D MT108 MMFT108T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 TO−261 CASE 318E−04 ISSUE N DATE 10 AUG 2009 SCALE 1:1 D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE E 1 2 3 b e1 e 0.08 (0003) C q A A1 DIM


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    OT-223 O-261) 318E-04 PDF

    MT108 motorola transistor

    Abstract: mt108 MMFT108T1 SMD310
    Text: MOTOROLA Order this document by MMFT108T1/D SEMICONDUCTOR TECHNICAL DATA Field Effect Transistor MMFT108T1 N–Channel Enhancement–Mode Logic Level SOT–223  2, 4 DRAIN TMOS FET TRANSISTOR N–CHANNEL — ENHANCEMENT 1 GATE 4 3 SOURCE 1 2 3 CASE 318E–04, STYLE 3


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    MMFT108T1/D MMFT108T1 261AA) MT108 MT108 motorola transistor mt108 MMFT108T1 SMD310 PDF

    Untitled

    Abstract: No abstract text available
    Text: PZT3904T1G, SPZT3904T1G General Purpose Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−223 CASE 318E


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    PZT3904T1G, SPZT3904T1G PZT3904T1/D PDF

    SCR 2N6399

    Abstract: SCR C106m SCR 1 c106d C106B mCr106M SCR C106D1 CASE369A 2N650 2N6509 SCR 2N6403
    Text: SCRs Silicon Controlled Rectifiers Style 4 K A K K G TO–92 1 (TO–226AA) Case 029 Style 10 0.8 30 2N5060 0.8 60 2N5061 100 2N5062 200 2N5064 100 MCR100–3 200 MCR100–4 400 MCR100–6 600 MCR100–8 200 4.0 4.0 4.0 SOT–223 Case 318E Style 10 G A K


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    226AA) 2N5060 2N5061 2N5062 2N5064 MCR100 225AA SCR 2N6399 SCR C106m SCR 1 c106d C106B mCr106M SCR C106D1 CASE369A 2N650 2N6509 SCR 2N6403 PDF

    CSS-319E

    Abstract: 91mm CSS-318E 319e 0204A
    Text: CHINA SEMICONDUCTOR CORPORATION Feature § § § § 0.36 inch 9.1mm Digit height. Case mold type Excellent character appearance Wide viewing angle Mechanical Dimension Typical Internal Equivalent Circuit SINGLE DIGIT DISPLY CSS-318E/319E Model no. § CSS-318E/319E Orange (GaAsP/ GaP)


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    CSS-318E/319E CSS-318E/319E CSS-318E CSS-319E -25ice 2-04-A 91mm 319e 0204A PDF

    Untitled

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT–223 TO–261 CASE 318E–04 ISSUE K DATE 01/02/2000 SCALE 1:1 A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S INCHES DIM MIN MAX A 0.249 0.263 B 0.130


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    PDF

    SPZT3904T1G

    Abstract: transistor marking 1am
    Text: PZT3904T1G, SPZT3904T1G General Purpose Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−223 CASE 318E


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    PZT3904T1G, SPZT3904T1G AEC-Q101 OT-223 PZT3904T1/D transistor marking 1am PDF

    turn encoder

    Abstract: qei encoder language c example 318EC ti gp 1292 smd marking code pJ 1059
    Text: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Stellaris LM4F232H5QC Microcontroller D ATA SHE E T D S -LM4F 232H5 Q C- 1 4 0 0 7 . 2 6 0 1 S P M S 318E C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2013 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments


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    LM4F232H5QC 232H5 turn encoder qei encoder language c example 318EC ti gp 1292 smd marking code pJ 1059 PDF

    sot-223 body marking D K Q F

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMFT108T1/D SEMICONDUCTOR TECHNICAL DATA T Field Effect Transistor N-Channel Enhancement-Mode Logic Level SOT-223 MMFT108T1 TM OS 2 ,4 DRAIN TMOS FET TRANSISTOR N-CHANNIEL — ENHANCEMENT CASE 318E-04, STYLE 3 SOT-223 TO-261AA


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    MMFT108T1/D OT-223 MMFT108T1 318E-04, O--261AA) 1-80CM41-2447 sot-223 body marking D K Q F PDF

    motorola p1f

    Abstract: P1F motorola SOT-223 P1f P1F marking p2f marking "device marking" ah sot223 NPN marking BH BS3 MARKING AS3 MARKING
    Text: SOT-223 Devices Maximum die size 80 mil x 100 mil CASE 318E-04 Plastic-Encapsulated General Purpose Amplifiers Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h p E @ lc Device I Max mA Marking V BR CEO Min I BH 80 40 250 150 80 40 25 150 NPN I BCP56T1


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    OT-223 318E-04 BCP56T1 BCP53T1 PZT2222AT1 PZT2907AT1 BSP52T1 PZTA14T1 motorola p1f P1F motorola SOT-223 P1f P1F marking p2f marking "device marking" ah sot223 NPN marking BH BS3 MARKING AS3 MARKING PDF

    Untitled

    Abstract: No abstract text available
    Text: PZTA42T1* CASE 318E-04, STYLE 1 TO-261AA M A X IM U M R A T IN G S Rating Symbol Value v CEO 300 Vdc Collector-Base Voltage (Open Emitter) VCBO 300 Vdc Emitter-Base Voltage (Open Collector) v EBO Collector-Em itter Voltage (Open Base) Collector Current (DC)


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    PZTA42T1* 318E-04, O-261AA) OT-223 PDF

    transistor P2P

    Abstract: No abstract text available
    Text: PZTA92T1* CASE 318E-04, STYLE 1 TO-261AA M AXIM UM RATINGS Unit Symbol Value Collector-Emitter Voltage v CEO -3 0 0 Vdc Collector-Base Voltage v CBO -3 0 0 Vdc Emitter-Base Voltage Ve b o - 5 .0 Vdc 'C -5 0 0 mAdc Total Power Dissipation up to T ^ = 25 C‘


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    PZTA92T1* 318E-04, O-261AA) OT-223 transistor P2P PDF

    Untitled

    Abstract: No abstract text available
    Text: PZTA42T1* CASE 318E-04, STYLE 1 TO-261AA M A X IM U M R A T IN G S Rating Symbol Value C o lle c to r - E m itte r V o lta g e ( O p e n B a s e ) v CEO 300 Vdc COLLECTOR C o lle c to r - B a s e V o lta g e ( O p e n E m itte r) VCBO 300 Vdc 24 v EBO 6.0


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    PZTA42T1* 318E-04, O-261AA) 111Pij PDF

    751A-02

    Abstract: 318D-03 751B-03
    Text: 2 CASE 318-07 SOT-23 TO-236AB CASE 318D-03 SC-59 CASE 646-06 1 CASE 751A-02 SO-14 4r 3 CASE 318E-04 SOT-223 (TO-261AA) CASE 648-08 1 Small-Signal Tuning and Switching Diodes CASE 751B-03 SO-16 Packaging options include plastic DIPs and surface mount packages. Most SOT-23, SC-59 and SOT-223 package devices


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    OT-23 O-236AB) 318D-03 SC-59 318E-04 OT-223 O-261AA) 51A-02 SO-14 751B-03 751A-02 PDF

    AKD SOT223

    Abstract: No abstract text available
    Text: PZT2222AT1* CASE 318E-04, STYLE 1 TO-261AA M A X IM U M R A T IN G S R atin g S ym bol V alue C o lle cto r-E m itte r V oltage v CEO 40 Vdc C o lle cto r-B a se V oltage v CB O 75 Vdc E m itter-B ase Voltage (O p en C ollector) v EBO 60 V dc 'C 600 m A dc


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    PZT2222AT1* 318E-04, O-261AA) OT-223 PZT2222AT1 AKD SOT223 PDF

    TGAM1

    Abstract: SOT-223 AKD AKD SOT223
    Text: PZTA96T1* CASE 318E-04, STYLE 1 TO-261AA M AXIMUM RATINGS Rating Symbol Value Unit C o lle cto r-E m itte r V oltage v CEO -4 5 0 Vdc C o lle cto r-B a se V oltage VCBO -4 5 0 V dc E m itter-B ase Voltage v EBO - 5.0 V dc 'c - 500 m A dc C o lle cto r C u rre n t


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    PZTA96T1* 318E-04, O-261AA) OT-223 TGAM1 SOT-223 AKD AKD SOT223 PDF

    transistor P2D

    Abstract: SOT-223 AKD AKD SOT223
    Text: PZTA92T1* CASE 318E-04, STYLE 1 TO-261AA MAXIMUM RATINGS Rating Symbol Value Unit v CEO -3 0 0 V dc C o lle cto r-B a se V oltage v CBO -3 0 0 V dc E m itter-B ase V oltage v EBO - 5.0 Vdc 'C -5 0 0 m A dc C o lle cto r-E m itte r Voltage C o lle cto r C urrent


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    PZTA92T1* 318E-04, O-261AA) OT-223 transistor P2D SOT-223 AKD AKD SOT223 PDF

    diode MARKING c9

    Abstract: MV7005T1 V7005
    Text: MV7005T1* CASE 318E-04, STYLE 2 TO-261AA MAXIMUM RATINGS Symbol Value Unit Reverse Voltage Rating Vr 15 Volts Forward Current if 50 mA Pd 280 28 mW/cC Total Power Dissipation @ T /\ = 25: C Derate above 25-C Junction Temperature Storage Temperature Range Tj


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    MV7005T1* 318E-04, O-261AA OT-223 V7005_ MV7005T1, MV7005T3 diode MARKING c9 MV7005T1 V7005 PDF

    t6661

    Abstract: ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 sot-23 mosfet Marking SA s 6z sot223 marking marking 6Z 25 marking 6z sot
    Text: SMALL-SIGNAL TMOS MOSFETs continued CASE 318-07 (TO-236AB) SOT-23 STYLE 22 CASE 318E-04 (TO-261AA) SOT-223 STYLE 6 Table 18 — Surface Mount TMOS MOSFETs The follow ing is a listing of sm all-sig na l surface m ount T M O S MO SFETs. Case 318-07 — TO-236AB (SOT-23) — N-Channel


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    O-236AB) OT-23 318E-04 O-261AA) OT-223 O-236AB OT-23) MMBF170LT1 BSS123LT1 2N7002LT1 t6661 ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 sot-23 mosfet Marking SA s 6z sot223 marking marking 6Z 25 marking 6z sot PDF

    tic 223

    Abstract: liA SOT23 7S1B-03
    Text: CASE 29-04 T0 -2 2 6 AA TO-92 1 3 2 CASE 318E-04 (TO-261AA) SOT-223 CASE 318-07 (TO-236AB) SOT-23 14 CASE 646-06 (TO-116) Plastic-Encapsulated Transistors CASE 7S1B-03 SO-16 M o to ro la 's p la s tic tra n s is to rs and d io d e s e n co m p a ss huncreds of devices spanning the gamut from general-purpose


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    O-236AB) OT-23 318E-04 O-261AA) OT-223 O-116) 7S1B-03 SO-16 O-116 OT-23, tic 223 liA SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: PZTA64T1* CASE 318E-04, STYLE 1 TO-261AA M AXIMUM RATINGS Rating Symbol Value C o lle c to r - E m itte r V o lta g e VCES - 30 Vdc C o lle c to r - B a s e V o lta g e VCBO -3 0 Vdc ve b o - 10 Vdc 1.5 W a tts - 500 m Adc E m itte r - B a s e V o lta g e


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    PZTA64T1* 318E-04, O-261AA) OT-223 PDF

    Untitled

    Abstract: No abstract text available
    Text: PZTA96T1* CASE 318E-04, STYLE 1 TO-261AA M A XIM U M RATINGS Rating Symbol Value Unit v CEO - 450 Vdc Collector-Base Voltage v CBO - 450 Vdc Emitter-Base Voltage Ve b o -5 .0 Vdc 'C -5 0 0 mAdc Collector-Emitter Voltage Collector Current Total Power Dissipation up to T /\ = 25 C*


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    PZTA96T1* 318E-04, O-261AA) OT-223 PDF