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    317Q Search Results

    317Q Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    OPA2317QDGKRQ1 Texas Instruments OPAx317-Q1 Low-Offset, Rail-to-Rail I/O Operational Amplifier 8-VSSOP -40 to 125 Visit Texas Instruments Buy
    OPA317QDBVRQ1 Texas Instruments Automotive-Qualified Operational Amplifier with Low-Offset, RRIO, and Low Current Consumption 5-SOT-23 -40 to 125 Visit Texas Instruments Buy
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    317Q Price and Stock

    Texas Instruments OPA317QDBVRQ1

    IC OPAMP ZER-DRIFT 1CIRC SOT23-5
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    DigiKey OPA317QDBVRQ1 Cut Tape 2,700 1
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    OPA317QDBVRQ1 Reel 3,000
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    OPA317QDBVRQ1 Digi-Reel 1
    • 1 $1.87
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    Mouser Electronics OPA317QDBVRQ1 2,725
    • 1 $1.72
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    Bristol Electronics OPA317QDBVRQ1 100
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    TME OPA317QDBVRQ1 1
    • 1 $1.7
    • 10 $1.53
    • 100 $1.22
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    Siemens 6ES75317QF000AB0

    S7-1500. AI 8XU/I/R/RTD BA
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    DigiKey 6ES75317QF000AB0 Box 2 1
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    Diodes Incorporated FL2500317Q

    CRYSTAL 25.0000MHZ 12PF SMD
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    DigiKey FL2500317Q Reel 3,000
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    Avnet Americas FL2500317Q Reel 24 Weeks 3,000
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    Mouser Electronics FL2500317Q
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    Sharp Microelectronics of the Americas GP1UX317QS

    SENSOR REMOTE REC 38.0KHZ 8M
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    DigiKey GP1UX317QS Tray
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    Texas Instruments OPA2317QDGKRQ1

    IC OPAMP ZER-DRIFT 2CIRC 8VSSOP
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    DigiKey OPA2317QDGKRQ1 Digi-Reel 1
    • 1 $2.55
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    OPA2317QDGKRQ1 Cut Tape 1
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    OPA2317QDGKRQ1 Reel 2,500
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    Mouser Electronics OPA2317QDGKRQ1 11,434
    • 1 $2.55
    • 10 $2.29
    • 100 $1.84
    • 1000 $1.25
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    Rochester Electronics OPA2317QDGKRQ1 96 1
    • 1 $1.25
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    • 100 $1.17
    • 1000 $1.06
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    TME OPA2317QDGKRQ1 1
    • 1 $2.33
    • 10 $2.1
    • 100 $1.67
    • 1000 $1.55
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    317Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GH1-317QB

    Abstract: GH1-317QE GH1-317QY GH1-417QC GH1-417QF GH1-217QG GH1-217QH GH1-217QK GH1-217QX GH1-317QA
    Text: 页码,1/1 GH1电感式接近开关 17 20 外形编号 检测距离Sn[mm] 具 备 型 号 NPN 常开 GH1-317QA NPN 常闭 GH1-317QB NPN 一开一闭 GH1-417QC DC PNP 常开 型 PNP 常闭 GH1-317QD GH1-317QE PNP 一开一闭 GH1-417QF 二线制 常开


    Original
    PDF GH1-317QB GH1-317QA GH1-417QC GH1-317QD GH1-317QE GH1-417QF GH1-217QG GH1-217QH GH1-217QK GH1-217QX GH1-317QB GH1-317QE GH1-317QY GH1-417QC GH1-417QF GH1-217QG GH1-217QH GH1-217QK GH1-217QX GH1-317QA

    m3351

    Abstract: KD 2114 marking code J2UT 1203 6d t201 CY7C1339 EQUIVALENT cd 1031 cs
    Text: CY7C1339 128K x 32 Synchronous-Pipelined Cache RAM Features The CY7C1339 I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V tolerant when V DDq=2.5V. * Supports 100-MHz bus fo r Pentium and PowerPC operations w ith zero w ait states


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    PDF CY7C1339 100-MHz 166-MHz 133-MHz CY7C1339 m3351 KD 2114 marking code J2UT 1203 6d t201 EQUIVALENT cd 1031 cs

    Untitled

    Abstract: No abstract text available
    Text: fax id: 2052 :/ CYPRESS C Y M 1 8 5 1 V 3 3 1,024K x 32 3.3V Static RAM Module Features • High-density 3.3V 32-m egabit SRAM module • 32-bit Standard Footprint supports densities from 16K x 32 through 1 M x 32 • High-speed SRAMs — Access time of 12 ns


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    PDF 32-bit 1851V33 72-pin 64-pin

    CY7C1350

    Abstract: No abstract text available
    Text: fax id: 1103 * g S S M ^ % rrv rt n n n CY7C1350 PRELIMINARY 128Kx36 Pipelined SRAM with NoBL Architecture F e a tu re s F u n c t io n a l D e s c r ip t io n • Pin compatible and functionally e q u iv a le n ts ZBT™ devices IDT71V546, MT55L128L36P and MCM63Z736


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    PDF CY7C1350 128Kx36 IDT71V546, MT55L128L36P MCM63Z736 CY7C1350 143-MHz

    L133A

    Abstract: No abstract text available
    Text: CY7C1346 64K X 36 Synchronous-Pipelined Cache RAM Features The C Y 7 C 1 346 I/O pins can op era te at eith er the 2.5V o r the 3.3V level; the I/O pins are 3.3 V to le ra n t w h en V DDQ=2.5V. • Supports 10O-MHz bus for Pentium and PowerPC operations with zero wait states


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    PDF CY7C1346 10O-MHz 166-MHz 133-MHz 100-MHz L133A

    2930D

    Abstract: No abstract text available
    Text: fax id: 1108 CY7C1338 :/ C Y P R E S S 128K X 32 Synchronous-Flow-Through 3.3V Cache RAM Features Functional Description • S u p p o rts 117-MHz m ic ro p ro c e s s o r cache s y s te m s w ith zero w a it states • 128K by 32 co m m o n I/O • Low S ta n d b y Pow er 1.65 mW, L v e rs io n


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    PDF 117-MHz 2930D

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY82C692 Pentium hyperCache™ Chipset Data-Path/Integrated Cache for h C -VX, h C -D X Solutions Features Two-bit wraparound counter supporting Intel Burst or Linear burst sequence Supports 3-1-1-1 Level 2 cache operation up to 66 MHz bus speed


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    PDF CY82C692 CY82C691 CY82C693 64-bit 128-KB)

    EQUIVALENT cd 1031 cs

    Abstract: 7C1031
    Text: CY7C1031 CY7C1032 PRELIM INARY 64K x 18 Synchronous Cache RAM • Direct interface with the processor and external cache controller • Asynchronous output enable • VOs capable of 33V operation • JEDEC-standard pinout • 52-pin PLCC and PQFP packaging


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    PDF CY7C1031 CY7C1032 66-MHz 7C1031) 7C1032) 52-pin EQUIVALENT cd 1031 cs 7C1031

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 128K X 18, 64Kx 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM MICRON I TECHNOLOGY, INC. SYNCBURST SRAM MT58LC128K18C6, MT58LC64K32C6, MT58LC64K36C6 3.3V Supply, Pipelined, Burst Counter and Double-Cycle Deselect FEATURES • Fast access times: 3.5ns, 3.8ns, 4.2ns, 4.5ns and 6ns


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    PDF MT58LC128K18C6, MT58LC64K32C6, MT58LC64K36C6

    Untitled

    Abstract: No abstract text available
    Text: mos IMS IMS IMS IMS IMS IMS 1605: 6 4 K x 1 1625: 1 6 K x 4 1629: 16K x 4 with Output Enable / 1626/7:16K x 4 with Separate I/Os 1635: 8K x 8 1695: 8K x 9 FEATURES • INMOS' Very High Speed Double Metal CMOS • Advanced Process-1.2 Micron Design Rules • 64K Bit Devices


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    PDF IMS16X5 IMS16X5 IMS1605i-15 IMS1605x-20 IMS1605 IMS1605x-25 IMS1629x-15 IMS1629x-20 IMS1629x-25 IMS1626x-15

    Untitled

    Abstract: No abstract text available
    Text: 128K X 18, 64Kx 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM MICRON I TECHNOLOGY, INC. SYNCBURST SRAM MT58LC128K18C5, MT58LC64K32C5, MT58LC64K36C5 3.3V Supply, Pipelined, Burst Counter and Double-Cycle Deselect FEATURES • • • • • • • • •


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    PDF MT58LC128K18C5, MT58LC64K32C5, MT58LC64K36C5

    Untitled

    Abstract: No abstract text available
    Text: 4Mb: 256K x 18, 128K x 32/36 PIPELINED, DCD SYNCBURST SRAM MT58L256L18D, MT58L128L32D, MT58L128L36D 4Mb SYNCBURST SRAM 3.3V Vdd, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • • • • • • • • • Fast clock and OE# access times


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    PDF MT58L256L18D, MT58L128L32D, MT58L128L36D

    qml-38535

    Abstract: CDFP4-F16 GDIP1-T16
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED YR-M O-DA REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 10 PREPARED BY Thanh V. Nguyen PMIC N/A S TA N D A R D M ICRO CIRC UIT DR A W IN G THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE


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    PDF 5962-E428-96C MIL-HDBK-103. MIL-HDBK-103 T0047DÃ qml-38535 CDFP4-F16 GDIP1-T16

    SAI60

    Abstract: No abstract text available
    Text: fax id: 2043 64K 128K 256K 512K Featu res x x x x 36 36 36 36 CYM9270 CYM9271A/B CYM9272A/B CYM9273 SRAM SRAM SRAM SRAM Module Module Module Module 9272A or 256K x 18 S R A M ’s 9272B, 9273). in plastic surface mount packages on an epoxy laminate board with pins. The


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    PDF CYM9270 CYM9271A/B CYM9272A/B CYM9273 144-position 9272B, SAI60

    EOIZ

    Abstract: No abstract text available
    Text: CY7C1351 128Kx36 Flow-Through SRAM with NoBL Architecture Features Functional Description The CY7C1351 is a 3.3V 128K by 36 Synchronous Flow-Through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the


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    PDF CY7C1351 128Kx36 IDT71V547, MT55L128L36F, MCM63Z737 66-MHz EOIZ

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1083 C 'i- PRELIMINARY CY7C1021V30 64K Features X 16 Static RAM Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BEE) is LOW, then data from I/O pins (l/Oi through l/0 8), is written into the location specified on the address pins (A0


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    PDF CY7C1021V30

    32K32C

    Abstract: No abstract text available
    Text: M I^ E a r n iM I 1M b 1 Mb: 64K x 18, 32K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM S Y N C B U R S T ¡ S c a r c e SRAM w a ij M T58LC 32K32C 6' 3.3V Vdd, 3.3V I/O, Pipelined, Double-Cycle Deselect hw i FEATURES • Fast clock and OE# access times


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    PDF T58LC 32K32C

    "32K x 32" SRAM

    Abstract: No abstract text available
    Text: M I^ P r iM 8 I n'mmn'zSE£ 1 Mb: 64K x 18, 32K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM 1Mb SYNCBURST MT58LC32K32C6' S R A M w a 3.3V V dd, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • Fast clock a n d OE# access tim es • Single +3.3V +0.3V/-0.165V p o w er su p p ly V d d


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    PDF

    DS0075

    Abstract: GAL22LV10C
    Text: Lattice G A L 2 2 L V 1 0 C Low Voltage E2CMOS PLD Generic Array Logic ] Semiconductor I Corporation FEATURES • 3.3V LOW VOLTAGE 22V10 A rchitecture — Interfaces with Standard 5V TTL Devices — 45m A Typical Active C urrent 75m A Max. FUNCTIONAL BLOCK DIAGRAM


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    PDF 22V10 125MHz GAL22LV10C GAL22LV10C: 1-800-FASTGAL DS0075 GAL22LV10C

    Untitled

    Abstract: No abstract text available
    Text: 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM M IC R O N I TECHNOLOGY, INC. MT58LC128K18C6, MT58LC64K32C6, MT58LC64K36C6; MT58LC128K18F1, MT58LC64K32F1, MT58LC64K36F1 2Mb SYNCBURST SRAM 3.3V V d d , 3.3V or 2.5V I/O, Pipelined, Double-Cycle Deselect


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    PDF MT58LC128K18C6, MT58LC64K32C6, MT58LC64K36C6; MT58LC128K18F1, MT58LC64K32F1, MT58LC64K36F1

    Untitled

    Abstract: No abstract text available
    Text: 128K x 18, 64K x 32/36 3.3V I/O, PI PELI NED, DCD S Y N C B U R S T SRAM MICRON I TECHNOLOGY, INC. C V K I P D I I D C O Y I M O D U n O CD O i l MT58LC128K18C5, MT58LC64K32C5, MT58LC64K36C5 T I A I UI n IV I 3.3V Supply, Pipelined, Double-Cycle Deselect Burst Counter and


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    PDF MT58LC128K18C5, MT58LC64K32C5, MT58LC64K36C5 100-PIN

    Untitled

    Abstract: No abstract text available
    Text: Lattice •■■■■■ GAL22LV10C Semiconductor Corporation Low Voltage E2CMOS PLD Generic Array Logic FEATURES FUNCTIONAL BLOCK DIAGRAM • 3.3V LOW VOLTAGE 22V 10 Architecture — Interfaces with Standard 5V TTL Devices — 45m A Typical Active C urrent 75m A Max.


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    PDF GAL22LV10C 125MHz 53flbi4c 00040b2 GAL22LV10C: DDD40L3

    Untitled

    Abstract: No abstract text available
    Text: 128K x 8 3.3V SYNCHRONOUS SRAM LATE WRITE WITH ZBT AND FLOW-THROUGH OUTPUT ADVANCE INFORMATION IDT71V509 Integrated Device Technology, Inc. FEATURES: • • • • • • • 128K x 8 memory configuration High speed - 66 MHz 9 ns Clock-to-Data Access


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    PDF IDT71V509 44-lead IDT71V509 576-bit 71V509 S044-1)

    Untitled

    Abstract: No abstract text available
    Text: CY7C1347 128K x 36 Synchronous-Pipelined Cache RAM Features The CY7C1347 I/O pins can operate at either the 2.5V or the 3.3V level, the I/O pins are 3.3V tolerant when V DDQ=2.5V. • Supports 1 0O-MHz bus for Pentium and PowerPC operations with zero wait states


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    PDF CY7C1347 166-MHz 133-MHz 100-MHz CY7C1347