Untitled
Abstract: No abstract text available
Text: 3141, 3142, a n d 3143 SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications and switch points, designed to operate continuously over extended temperatures to +150°C, and are more
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A3141ELL
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836 zener
Abstract: No abstract text available
Text: Zener Regulator Diodes Part Number j • Microsemi Package Division ! Outline Type Micmsemi Mil Data ' Power Spec Sheet ID j W Vz (V) Izt (mA) 3141 3142 7511 7512 8536 8537 9265 9266 10725 10726 13758 17359 17380 3593 3143 3144 3594 20680 7513 7514 8538
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ZEN-127
836 zener
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SLVS 200
Abstract: MAX1127 SLVS MAX1126 MAX1126EGK MAX1127EVKIT
Text: 19-3143; Rev 2; 9/05 KIT ATION EVALU E L B A AVAIL Quad, 12-Bit, 40Msps, 1.8V ADC with Serial LVDS Outputs Features The MAX1126 quad, 12-bit analog-to-digital converter ADC features fully differential inputs, a pipelined architecture, and digital error correction. This ADC is
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Original
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12-Bit,
40Msps,
MAX1126
12-bit
563mW
MAX1126
SLVS 200
MAX1127
SLVS
MAX1126EGK
MAX1127EVKIT
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Untitled
Abstract: No abstract text available
Text: 19-3143; Rev 2; 9/05 KIT ATION EVALU E L B A AVAIL Quad, 12-Bit, 40Msps, 1.8V ADC with Serial LVDS Outputs Features The MAX1126 quad, 12-bit analog-to-digital converter ADC features fully differential inputs, a pipelined architecture, and digital error correction. This ADC is
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Original
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12-Bit,
40Msps,
MAX1126
12-bit
563mW
MAX1126
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MAX1126
Abstract: MAX1126EGK MAX1127 MAX1127EVKIT SLVS SLVS 200
Text: 19-3143; Rev 1; 3/04 KIT ATION EVALU E L B AVAILA Quad, 12-Bit, 40Msps, 1.8V ADC with Serial LVDS Outputs Features The MAX1126 quad, 12-bit analog-to-digital converter ADC features fully differential inputs, a pipelined architecture, and digital error correction. This ADC is
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Original
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12-Bit,
40Msps,
MAX1126
12-bit
563mW
10x10x0
MAX1126
MAX1126EGK
MAX1127
MAX1127EVKIT
SLVS
SLVS 200
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Untitled
Abstract: No abstract text available
Text: 19-3143; Rev 2; 9/05 KIT ATION EVALU E L B AVAILA Quad, 12-Bit, 40Msps, 1.8V ADC with Serial LVDS Outputs Features The MAX1126 quad, 12-bit analog-to-digital converter ADC features fully differential inputs, a pipelined architecture, and digital error correction. This ADC is
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Original
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12-Bit,
40Msps,
MAX1126
12-bit
563mW
MAX1126
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PDF
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Untitled
Abstract: No abstract text available
Text: 19-3143; Rev 2; 9/05 KIT ATION EVALU E L B AVAILA Quad, 12-Bit, 40Msps, 1.8V ADC with Serial LVDS Outputs Features The MAX1126 quad, 12-bit analog-to-digital converter ADC features fully differential inputs, a pipelined architecture, and digital error correction. This ADC is
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Original
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12-Bit,
40Msps,
-90dB
135mW
68-Pin
MAX1126EGK-TD
MAX1126EGK
MAX1126EGK-D
10x10x0
21-0122C
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PDF
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SLVS
Abstract: MAX1126 MAX1126EGK MAX1127 MAX1127EVKIT
Text: 19-3143; Rev 2; 9/05 KIT ATION EVALU E L B AVAILA Quad, 12-Bit, 40Msps, 1.8V ADC with Serial LVDS Outputs Features The MAX1126 quad, 12-bit analog-to-digital converter ADC features fully differential inputs, a pipelined architecture, and digital error correction. This ADC is
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Original
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12-Bit,
40Msps,
MAX1126
12-bit
563mW
MAX1126
SLVS
MAX1126EGK
MAX1127
MAX1127EVKIT
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PDF
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Untitled
Abstract: No abstract text available
Text: 19-3143; Rev 0; 1/04 KIT ATION EVALU LE B A IL A AV Quad, 12-Bit, 40Msps, 1.8V ADC with Serial LVDS Outputs Features The MAX1126 quad, 12-bit analog-to-digital converter ADC features fully differential inputs, a pipelined architecture, and digital error correction. This ADC is
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Original
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12-Bit,
40Msps,
-90dB
135mW
68-Pin
MAX1126
10x10x0
MAX1126
G6800-4.
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PDF
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150L120A
Abstract: 150LA 45L100 2088a BS3934 cr 29c BS9300 45L15 150K-A 150L80A
Text: 73 DE|4fi5545H 0007350 3 | Data Sheet No. PD-2.088A 73C 07350 4855452 INTERNATIONAL RECTIFIER D T -a /-3-/ in t e r n a t io n a l r e c t if ie r 45L, 15QK-A, 1SOL-A, 150K5 SERIES 1 5 0 Amp Power Silicon Rectifier Diodes Description Major Ratings and Characteristics
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150K-A,
150L-A,
150KS
150K-A/150KS
150L-A/45L
152K-A
V1/2-20
152L-A
3/8-24-UNF-2A
150L120A
150LA
45L100
2088a
BS3934
cr 29c
BS9300
45L15
150K-A
150L80A
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MMBD501
Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2
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OT-23
OT-23
MMBD2836
MBAW56
MMBD2835
MBAV74
MMBD2838
MBAV70
MMBD2837
MMBD6100
MMBD501
MMBV2098
MBAV99
A5 sot-23 single DIODE
MMBV105G
MMBV2097
A5 sot-23 DIODE
MBAS16
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st1029
Abstract: L14G ST1026 T125 f5d1 diode ST10-30 MA7 diode 3143 diode ST1025 ST1030
Text: EO AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5D1/2/3 PACKAGE DIMENSIONS DESCRIPTION The F5D series is 880nm LEDs in a narrow angle, TO-46 package. SEATING FEATURES ST1332 SYMBOL A $3, e ei h i k L a * Good optical to mechanical alignment INCHES MfN. MAX.
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880nm
ST1604
ST102S-99
ST1029-99
ST1030-99
st1029
L14G
ST1026
T125
f5d1 diode
ST10-30
MA7 diode
3143 diode
ST1025
ST1030
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la 5752
Abstract: No abstract text available
Text: 5752 DUAL PERIPHERAL AND POWER DRIVER -TRANSIENT-PROTECTED OUTPUTS Com bining dual AND logic gates, high-current switching transistors, and transient suppression diodes in a bipolar m onolithic integrated circuit, this peripheral and power driver meets interface requirem ents
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UDN5752M
UDN5752M
la 5752
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PDF
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UDN5752M
Abstract: A7900 UDN5732M A1174 GP-009 GP009
Text: AL L E GRO MI C R OS Y S T E MS I NC 33E D • 050433Ô 0 Q0 S 2 1 Ô S ■ ALGR DUAL PERIPHERAL AND POWER DRIVER — TRANSIENT-PROTECTED OUTPUTS Com bining dual AND logic gates, high-current switching transistors, and transient suppression diodes in a bipolar m onolithic integrated
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UDN5752M
-9790B
-7900B
UDN5752M
A7900
UDN5732M
A1174
GP-009
GP009
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TRANSISTOR K 314
Abstract: foto transistor SFH 314 phototransistor 500-600 nm GEX06630 Q62702-P1668 Q62702-P1675 Q62702-P1755 Q62702-P1756 Q62702-P1757
Text: SFH 314 SFH 314 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor Area not flat 6.9 6.1 5.7 5.5 5.9 5.5 1.8 1.2 29.5 27.5 Cathode Diode Collector (Transistor) ø5.1 ø4.8 0.8 0.4 2.54 mm spacing 0.6 0.4 SFH 314 SFH 314 FA feo06652 .Neu: 4.0
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feo06652
GEX06630
feof6652
OHF02340
OHF02338
OHF02342
TRANSISTOR K 314
foto transistor
SFH 314
phototransistor 500-600 nm
GEX06630
Q62702-P1668
Q62702-P1675
Q62702-P1755
Q62702-P1756
Q62702-P1757
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TRANSISTOR K 314
Abstract: GEX06630 Q62702-P1668 Q62702-P1675 Q62702-P1755 Q62702-P1756 Q62702-P1757 Q62702-P1758
Text: SFH 314 SFH 314 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 314 SFH 314 FA feo06652 .Neu: Area not flat 1.8 1.2 5.9 5.5 4.0 3.4 0.6 0.4 Chip position GEX06630 feof6652 29.5 27.5 Cathode Diode Collector (Transistor) 6.9 6.1 5.7 5.5
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feo06652
GEX06630
feof6652
OHF02340
OHF02338
OHF02342
TRANSISTOR K 314
GEX06630
Q62702-P1668
Q62702-P1675
Q62702-P1755
Q62702-P1756
Q62702-P1757
Q62702-P1758
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H1 SOT-89 amplifier
Abstract: bop 285 A3141ELL
Text: SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +150°C, and are more stable with both
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MA40S
Abstract: MA40S-3irn A3144 D 3141 transistor SENSITIVE HALL-EFFECT SWITCHES A3141 A3143 RFT hall UGN 3141 D5DM
Text: l i i i i SEN SITIVE HALL-EFFECT SW ITCH ES FOR H IG H - TEM PERATURE OPERATIO N These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +1506C, and are more stable with both
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PH-003A
DS0433Ã
MA40S
MA40S-3irn
A3144
D 3141 transistor
SENSITIVE HALL-EFFECT SWITCHES
A3141
A3143
RFT hall
UGN 3141
D5DM
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Thyristor 1568
Abstract: D1069N D1809N D269N D3301N D749N D849N T 3361 D
Text: B2 - Schaltung ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 910 V 3600 V + - Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode D
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D269N
D749N
D1069N
D1809N
D849N
D3301N
Thyristor 1568
D1069N
D1809N
D269N
D3301N
D749N
D849N
T 3361 D
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PDF
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hall magnetic 3144
Abstract: hall sensor 3144 3144 hall sensor 3141 hall sensor 3141 thru 3144 3144 sensor A3144 3280E A3141 UGN 3235
Text: Data Sheet 27621.6A 3141 THRU 3144 SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION X These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +150°C, and are more stable with both
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Original
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PH-003A
hall magnetic 3144
hall sensor 3144
3144 hall sensor
3141 hall sensor
3141 thru 3144
3144 sensor
A3144
3280E
A3141
UGN 3235
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PDF
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hall magnetic 3144
Abstract: 3141 thru 3144 3144 sensor 3280E UGN 3235 we 3141 A3141 A3141ELT A3142 A3143
Text: Data Sheet 27621.6A 3141 THRU 3144 SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION X These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +150°C, and are more stable with both
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Original
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PH-003A
hall magnetic 3144
3141 thru 3144
3144 sensor
3280E
UGN 3235
we 3141
A3141
A3141ELT
A3142
A3143
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PDF
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D 3141 transistor
Abstract: diode BYG 220 D 3141 3144E byg 100 diode hall magnetic 3144 DC Motor UGN 3141
Text: a> ço > a SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +150°C, and are more stable with both
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PH-003A
D 3141 transistor
diode BYG 220
D 3141
3144E
byg 100 diode
hall magnetic 3144
DC Motor
UGN 3141
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PDF
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2N3648
Abstract: TO206AB
Text: MOTOROLA SC 12E 0 I b3b?25M 0001,353 â XSTRS/R F r-35"-/7 I 2N3648 CASE 26-03, STYLE 1 TO-46 TO-206AB MAXIMUM RATINGS Symbol Value Collector-Emitter Voltage Rating VcEO 15 Unit Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current — Continuous
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2N3648
O-206AB)
2N3648
TO206AB
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PDF
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ST102
Abstract: LS38 Y-H8 846 transistor
Text: SILICON TRANSI STOR CORP SbE D 0254022 OOOQ^TQ 31N « S T C SILICON TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 VOLTS 0.33 OHMS QUAD N CHANNEL POWER MOSFET DEVICE TYPE STQ402
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STQ402
ST102
MIL-S-19500
ST102
LS38
Y-H8
846 transistor
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PDF
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