Untitled
Abstract: No abstract text available
Text: M39003/01-3135 aka M39003/01-3135 T212C685K075SS CSR13H685KS Capacitor, tantalum, 6.8 uF, +/-10% Tol, 75V@85C Dimensions mm Specifications ID Dimension Tolerance D L1 L2 F LL 7.34 17.42 20.88 0.64 38.1 +/-0.25 +/-0.79 +0 +/-0.05 +/-6.35 Manufacturer: Value:
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M39003/01-3135
M39003/01-3135
T212C685K075SS
CSR13H685KS
cs13-style'
100kHz
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c 3135-3
Abstract: 2044B 2SA1731
Text: Ordering number:EN3135A PNP Epitaxial Planar Silicon Transistor 2SA1731 High-Speed Switching Applications Features • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions
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EN3135A
2SA1731
2045B
2SA1731]
2044B
c 3135-3
2044B
2SA1731
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2044B
Abstract: 2SA1731 ITR04425
Text: Ordering number:ENN3135A PNP Epitaxial Planar Silicon Transistor 2SA1731 High-Speed Switching Applications Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.
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ENN3135A
2SA1731
2045B
2SA1731]
2044B
2044B
2SA1731
ITR04425
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GR-1089-CORE
Abstract: I3124 TISP3070H3SL TISP3095H3SL TISP3125H3SL TISP3210H3SL TISP3250H3SL TISP3350H3SL
Text: TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS Ion-Implanted Breakdown Region Precise D.C. and Dynamic Voltages
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TISP3070H3SL
TISP3095H3SL,
TISP3125H3SL
TISP3210H3SL
TISP3250H3SL
TISP3350H3SL
2x100
GR-1089-CORE
GR-1089-CORE
I3124
TISP3095H3SL
TISP3210H3SL
TISP3350H3SL
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Untitled
Abstract: No abstract text available
Text: TISP3070H3SL THRU TISP3115H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright 2000, Power Innovations Limited, UK JANUARY 1999 - REVISED OCTOBER 2000 TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS
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TISP3070H3SL
TISP3115H3SL,
TISP3125H3SL
TISP3210H3SL
TISP3250H3SL
TISP3350H3SL
2x100
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SP3070H3
Abstract: SP3250H3 sp3070h Pi 3115 SP3350H3 SP3080H3 TISP3250H3SL THRU TISP3350H3SL SP-3350 SP3125 SP3135
Text: TISP3070H3SL THRU TISP3115H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright 2000, Power Innovations Limited, UK JANUARY 1999 - REVISED OCTOBER 2000 TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS
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TISP3070H3SL
TISP3115H3SL,
TISP3125H3SL
TISP3210H3SL
TISP3250H3SL
TISP3350H3SL
2x100
SP3070H3
SP3250H3
sp3070h
Pi 3115
SP3350H3
SP3080H3
TISP3250H3SL THRU TISP3350H3SL
SP-3350
SP3125
SP3135
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GR-1089-CORE
Abstract: I3124 TISP3070H3SL TISP3095H3SL TISP3125H3SL TISP3210H3SL TISP3250H3SL TISP3350H3SL
Text: TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright 1999, Power Innovations Limited, UK JANUARY 1999 - REVISED MAY 1999 TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS
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TISP3070H3SL
TISP3095H3SL,
TISP3125H3SL
TISP3210H3SL
TISP3250H3SL
TISP3350H3SL
2x100
GR-1089-CORE
GR-1089-CORE
I3124
TISP3095H3SL
TISP3210H3SL
TISP3350H3SL
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20/SP3070H3
Abstract: SP3070H3 SP3350H3
Text: TISP3070H3SL THRU TISP3115H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1999 - REVISED OCTOBER 2000 TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS ● Ion-Implanted Breakdown Region
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TISP3070H3SL
TISP3115H3SL,
TISP3125H3SL
TISP3210H3SL
TISP3250H3SL
TISP3350H3SL
2x100
20/SP3070H3
SP3070H3
SP3350H3
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Untitled
Abstract: No abstract text available
Text: AZ23C2V7-AZ23C51 Surface-mount Dual Zener Diode Voltage range 2.7-51 Volts 300m Watts Power Dissipation SOT-23 FEATURES 0.020 0.51 0.015(0.37) Dual zeners in common-anode configuration 300 mW power dissipation rating Ideally suited for automated insertion
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AZ23C2V7-AZ23C51
OT-23
OT-23,
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Untitled
Abstract: No abstract text available
Text: DZ23C2V7-DZ23C51 Surface-mount Dual Zener Diode Voltage range 2.7-51 Volts 300m Watts Power Dissipation SOT-23 FEATURES 0.020 0.51 0.015(0.37) Dual zeners in common-cathode configuration 300 mW power dissipation Ideally suited for automated insertion Vz for both diodes in common case is ƙ5%
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DZ23C2V7-DZ23C51
OT-23
OT-23,
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SUD50N03-06P
Abstract: No abstract text available
Text: SPICE Device Model SUD50N03-06P Vishay Siliconix N-Channel 30-V D-S 175° MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50N03-06P
18-Jul-08
SUD50N03-06P
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SUM85N03-06P
Abstract: No abstract text available
Text: SPICE Device Model SUM85N03-06P Vishay Siliconix N-Channel 30-V D-S 175° MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM85N03-06P
18-Jul-08
SUM85N03-06P
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SUR50N03-06P
Abstract: No abstract text available
Text: SPICE Device Model SUR50N03-06P Vishay Siliconix N-Channel 30-V D-S 175° MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUR50N03-06P
18-Jul-08
SUR50N03-06P
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912I st
Abstract: TS9121 912AIY 912I TS912 TS912A 912IY st
Text: TS912 Rail-to-rail CMOS dual operational amplifier Features • Rail-to-rail input and output voltage ranges ■ Single or dual supply operation from 2.7V to 16V ■ Extremely low input bias current: 1pA typ. ■ Low input offset voltage: 2mV max. ■ Specified for 600Ω and 100Ω loads
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TS912
00A/ampli
TS912
912I st
TS9121
912AIY
912I
TS912A
912IY st
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912I st
Abstract: TS912 TS912A 912BI st 912i
Text: TS912 Rail-to-rail CMOS dual operational amplifier Features • Rail-to-rail input and output voltage ranges ■ Single or dual supply operation from 2.7V to 16V ■ Extremely low input bias current: 1pA typ. ■ Low input offset voltage: 2mV max. ■ Specified for 600Ω and 100Ω loads
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TS912
00A/ampli
TS912
912I st
TS912A
912BI
st 912i
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Untitled
Abstract: No abstract text available
Text: TS912, TS912A, TS912B Rail-to-rail CMOS dual operational amplifier Features • Rail-to-rail input and output voltage ranges ■ Single or dual supply operation from 2.7 to 16 V ■ Extremely low input bias current: 1 pA typ. ■ Low input offset voltage: 2 mV max.
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TS912,
TS912A,
TS912B
TS912
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912I st
Abstract: 912I TS912BIDT 912BI TS912 TS912A
Text: TS912, TS912A, TS912B Rail-to-rail CMOS dual operational amplifier Features • Rail-to-rail input and output voltage ranges ■ Single or dual supply operation from 2.7 to 16 V ■ Extremely low input bias current: 1 pA typ. ■ Low input offset voltage: 2 mV max.
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TS912,
TS912A,
TS912B
TS912
912I st
912I
TS912BIDT
912BI
TS912A
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intel 4308
Abstract: k 3918 regulator counter 4793 IMX135 4929 ha 1406 ha SEDI230 c 1406 ha
Text: SEDI230 Series SED1230 Series LCD DRIVER-CONTROLLER • DESCRIPTION The SED1230 Series are intelligent C M O S LCD controller-drivers with the ability to display characters 5 x 7 and icons. The SED1230 Series communicates with a high-speed microprocessor such as the Intel
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SEDI230
SED1230
GDD33H7
either8080-
8080-Series
6800-Series
intel 4308
k 3918 regulator
counter 4793
IMX135
4929
ha 1406 ha
c 1406 ha
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SN 8 p 2714 sb
Abstract: c 1406 ha TRW POWER SN 4929 ha 1406 ha m940
Text: SED1230 Series LCD DRIVER-CONTROLLER • DESCRIPTION The SED1230 Series are intelligent CMOS LCD controlier-drivers with the ability to display characters 5 x 7 and icons. The SED1230 Series communicates with a high-speed microprocessor such as the Intel
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SED1230
ch4964
either8080-
8080-Series
SED123X
6800-Series
SN 8 p 2714 sb
c 1406 ha
TRW POWER
SN 4929
ha 1406 ha
m940
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LW 4933
Abstract: LA 4127 3808 divider D12301
Text: SED1230 Series LCD DRIVER-CONTROLLER DESCRIPTION T he S E D 1 2 30 S e rie s are in te llig e n t C M O S LCD c o n tro lle r-d rive rs w ith th e a b ility to d isp la y ch a ra cte rs 5 x 7 and icons. The SED1230 Series com m unicates with a high-speed m icroprocessor such as the Intel
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SED1230
8080-Series
6800-Series
LW 4933
LA 4127
3808 divider
D12301
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MLC4082B
Abstract: No abstract text available
Text: T ' H 3 - Z Ordering num ber: EN 3 7 3 4 SANYO SEMICONDUCTOR CORP S3E TTTTOTb OOlQBbb 5=14 • T S A ü » MLC4082B No.3734 i SAXYO CMOS Standard Logic i Dual 4-Input AND Gate The MLC4082B is a 4-input AND logic IC (equivalent to B series having such features as wide operating
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MLC4082B
MLC4082B
00103bS
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3604-3
Abstract: No abstract text available
Text: SANYO SEMI CONDUCTOR CORP O rd e rin g n u m b e r: E N 3 6 0 4 S3E J • 7 , , 707t 00103äl | ö I U ^ B T S A J T - H I I _ M L C 4 0 1 2 B N» 3604 mm 3 ~ Z - SA \Y O CMOS Standard Logic Dual 4-Input N A ND Gate The MLC4012B is a 4-input NAND logic IC (equivalent to B series having such features as wide
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MLC4012B
urre00
MLC4012B
3604-3
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8202-M
Abstract: 8202M
Text: SANYO SEMICONDUCTOR CORP S3E D 7 tn ? 0 7 b ODI OSEE bñb • TSAJ O rd e rin g number: EN3605 r - V - 2 / j MLC4071B No.3605 SA\YO CMOS Standard Logic i Quad 2-Input OR Gate The MLC4071B is a 2-input OR logic IC equivalent to B series having such features as wide operating
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EN3605
MLC4071B
MLC4071B
8202-M
8202M
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Untitled
Abstract: No abstract text available
Text: -' O rd e rin g n u m b e r : EN 373 1_j H 3 ~ "2- SANYO SEMICONDUCTOR CORP No-3731 S3E D • 7 c^ 7 D 7 b GG1G37Ô SOb B T S A J / / _ SA\YO MLC4Q23B CMOS S tandard Logic
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GG1G37Ô
No-3731
MLC4Q23B
MLC4023B
MLC4023B
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