P3596
Abstract: GEXY6710 Q62702-P1673 Q62702-P3595 Q62702-P3596 Q62702-P874
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 310 SFH 310 FA SFH 310 SFH 310 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 310 und bei 880 nm (SFH 310 FA) • Hohe Linearität
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Q62702-P874
P3596
GEXY6710
Q62702-P1673
Q62702-P3595
Q62702-P3596
Q62702-P874
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SFH 3000
Abstract: No abstract text available
Text: 2008-11-06 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.0 SFH 310, SFH 310 FA SFH 310 SFH 310 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 450 nm . 1100 nm SFH 310 , 740 nm . 1100 nm (SFH 310 FA) • Package: 3mm Radial (T 1), Epoxy
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D-93055
SFH 3000
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P3596
Abstract: Q62702-P3595 Q62702-P1673 Q62702-P3596 Q62702-P874
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 310 SFH 310 FA SFH 310 SFH 310 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 310 und bei 880 nm (SFH 310 FA) • Hohe Linearität • 3 mm-Plastikbauform
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OHF00871
OHF01524
GEX06710
P3596
Q62702-P3595
Q62702-P1673
Q62702-P3596
Q62702-P874
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Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 310 SFH 310 FA SFH 310 SFH 310 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm (SFH 310) und bei 880 nm (SFH 310 FA)
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Q62702P0874
Q62702P3595
Q62702P1673
Q62702P3596
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GEXY6710
Abstract: OHLY0598
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 310 SFH 310 FA SFH 310 SFH 310 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm (SFH 310) und bei 880 nm (SFH 310 FA)
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Untitled
Abstract: No abstract text available
Text: 2014-01-14 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.1 SFH 310, SFH 310 FA SFH 310 SFH 310 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 450 nm . 1100 nm SFH 310 , 740 nm . 1100 nm (SFH 310 FA) • Package: 3mm Radial (T 1), Epoxy
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D-93055
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Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 310 SFH 310 FA SFH 310 SFH 310 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 310 und bei 880 nm (SFH 310 FA) • Hohe Linearität • 3 mm-Plastikbauform
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OHF01524
GEXY6710
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310fa
Abstract: 310-FA
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 310 SFH 310 FA SFH 310 SFH 310 FA Wesentliche Merkmale Features • Spektraler Bereich der Fotoempfindlichkeit: 450 nm .1100 nm (SFH 310) • 740 nm .1100 nm (SFH 310FA)
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310FA)
310FA
310fa
310-FA
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310FA
Abstract: Q62702-P1673 Q62702-P874 Phototransistor 281
Text: SFH 310 SFH 310 FA SFH 310 SFH 310 FA feof6653 feof6653 Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale Features ● Speziell geeignet für Anwendungen im
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feof6653
310FA
Q62702-P1673
Q62702-P874
Phototransistor 281
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OS-PCN-2006-015-A
Abstract: GEXY6710 OHLY0598 Q62702-P3596
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 310 SFH 310 FA SFH 310 SFH 310 FA Not for new design (valid till DC0837, additional information see OS-PCN-2006-015-A) Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich
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DC0837,
OS-PCN-2006-015-A)
OS-PCN-2006-015-A
GEXY6710
OHLY0598
Q62702-P3596
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foto transistor
Abstract: phototransistor 600 nm GEX06710 Q62702-P1673 Q62702-P874
Text: SFH 310 SFH 310 FA 4.8 4.4 1.1 0.9 1.8 1.2 29.0 27.0 3.7 3.5 6.1 5.7 0.6 0.4 Chip position GEX06710 feof6653 Collector/ Cathode 3.4 3.1 ø2.9 ø2.7 2.7 2.1 0.7 0.4 0.8 0.4 2.54 mm spacing 0.6 0.4 Area not flat SFH 310 SFH 310 FA feo06653 Neu: NPN-Silizium-Fototransistor
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GEX06710
feof6653
feo06653
310FA
OHF02331
OHF00871
OHF01524
foto transistor
phototransistor 600 nm
GEX06710
Q62702-P1673
Q62702-P874
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rkm 3B
Abstract: SO2484 BCW67E
Text: TYPES* MAXIMUM RA TINGS Markmg PNP NPN ELECTRICAL CHARACTERISTICS AT 25 C P tot "cl30 “CEO “EBO lC V V V mA 50 45 50 45 50 45 50 45 50 45 50 45 30 i 25 30 25 30 25 30 25 30 ~ 25 30 25 5 5 5 5, 5 5 5 5 5 ~ 5 5 5 500 ~ 310 1 500 310 500 310 500 310 ' 500
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circuit diagram of ELECTRONIC BALLAST for 40 watt
Abstract: ELECTRONIC BALLAST 36W circuit diagram dali schematic pic16f628 ELECTRONIC BALLAST 4 LAMP SCHEMATIC npn DALI CD with software and design RS232-DALI pc to Microcontroller communication through IR fluorescent ballasts 36w TRANSISTOR IR2159
Text: Digitally Addressable DALI Dimming Ballast Cecilia Contenti and Tom Ribarich Applications Engineer, International Rectifier, Lighting Group, 101S Sepulveda Blv. El Segundo, CA, 90245-4382 tel. 310 726-8927, fax. (310)726-8846, email: cconten1@irf.com as presented at APEC 2002
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100KOhm,
820KOhm,
SMT1206
360KOhm,
circuit diagram of ELECTRONIC BALLAST for 40 watt
ELECTRONIC BALLAST 36W circuit diagram
dali schematic
pic16f628
ELECTRONIC BALLAST 4 LAMP SCHEMATIC npn
DALI CD with software and design
RS232-DALI
pc to Microcontroller communication through IR
fluorescent ballasts 36w TRANSISTOR
IR2159
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marking 3G
Abstract: ICES BC856A-BC858C bc856b
Text: BC856A - BC858C PNP SURFACE MOUNT SMALL SIGNALTRANSISTOR Features • • • • Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary NPN Types Available BC846-BC848 For Switching and AF Amplifier Applications
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BC856A
BC858C
BC846-BC848)
OT-23
OT-23,
MIL-STD-202,
BC856B
BC857A
BC857B
marking 3G
ICES
BC856A-BC858C
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WPTS-310
Abstract: No abstract text available
Text: Waitrony Photo Transistor Module No.: WPTS-310 1. General Description: Dimensions The WPTS-310 is a high sensitivity NPN silicon phototransistor without flange mounted in a compact clear resin package. This small phototransistor permits narrow angular response.
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WPTS-310
WPTS-310
1010J
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Untitled
Abstract: No abstract text available
Text: SIEMENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 310 SFH 310 FA MaBe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale Features • Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm
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sensitivitySFH310FA
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 310 SFH 310 FA M aße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm
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1998-0S-FOtatl
310FA
0HFQ2343
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Untitled
Abstract: No abstract text available
Text: SIEMENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 310 SFH 310 FA M aße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm
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SFH310
0HF02333
OHF02335
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2N3563
Abstract: BF163 se5020 Fairchild 2N2857 fairchild to-106 2N3880 BF159 PE5025 2N5130 BF167
Text: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN RF-IF AMPLIFIER AND OSCILLATOR TRANSISTORS BY ASCENDING FREQUENCY (Cont'd) Item DEVICE NO. PG @ f [GMA] (OSC POWER) dB Min MHz C0b @f MHz Pd ta 25°C mW 3.5 (Typ) 60 310 TO-106 0.8 (Typ) 3.0 (Typ) 40 310 TO-106 [C ce]
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BF159
O-106
BF163
PE5025
FTR118
BF167
PE5030B
BF222
2N3563
se5020
Fairchild 2N2857
fairchild to-106
2N3880
2N5130
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FZAM18P1005
Abstract: 18P3005 LED880nm SB310 MS SERIES led optic fiber
Text: Fiber optic sensors Series 18 Sb 310 mm / Tw 60 mm RS 655-650 PNP light operate dark operate light/dark operate RS 655-650 FZAM18P1005 FZAM 18P3005 technical data actual range Sb through beam sensors 310 mm distance T w (diffuse sensors) 60 mm o utput indicator
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FZAM18P1005
18P3005
18P3005
LED880nm
SB310
MS SERIES
led optic fiber
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BC807-16
Abstract: BC807-25 BC807-40 BC817
Text: BC807-16/ -25/ -40 PNP SURFACE MOUNT TRANSISTOR Features 310 mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary NPN Types Available BC817 SOT-23
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BC807-16/
BC817)
OT-23,
MIL-STD-202,
BC807-16
BC807-25
BC807-40
DS11208
BC807-16/-25/-40
BC817
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BC846A
Abstract: BC846B BC847A BC847B BC847C BC848A BC848B BC848C
Text: TRANSYS BC846A - BC848C ELECTRONICS NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR LIMITED Features Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary PNP Types Available BC856-BC858 For Switching and AF Amplifier Applications
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BC846A
BC848C
BC856-BC858)
OT-23,
MIL-STD-202,
BC847C
BC846B
BC848A
BC847A
BC847B
BC848B
BC848C
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transistor af 178
Abstract: BC807 BC817-16 BC817-25 BC817-40 MC9100
Text: BC817-16 / -25 / -40 NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features 310 mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available BC807
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BC817-16
BC807)
OT-23,
MIL-STD-202,
BC817-25
BC817-40
DS11107
BC817-16/-25/-40
transistor af 178
BC807
MC9100
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BUL310
Abstract: No abstract text available
Text: B U L 310 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED
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