IRF 902
Abstract: GA600GD25S CGC SWITCH IGBT DRIVE 50V 300A IGBT 1000A 150V150V
Text: PD - 50071C GA600GD25S SINGLE SWITCH IGBT DUAL INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package
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50071C
GA600GD25S
Collecto18.
IRF 902
GA600GD25S
CGC SWITCH
IGBT DRIVE 50V 300A
IGBT 1000A
150V150V
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GA600HD25S
Abstract: igbt "internal thermistor" int-a-pak
Text: PD - 94341A GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DUAL INT-A-Pak Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package
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4341A
GA600HD25S
GA600HD25S
igbt "internal thermistor" int-a-pak
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IRF 902
Abstract: GA600GD25S LTA 902 RG2 DIODE 50071 555 ic IC 555 RT25
Text: PD -50071 PRELIMINARY SINGLE SWITCH IGBT DOUBLE INT-A-PAK GA600GD25S StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package
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GA600GD25S
IRF 902
GA600GD25S
LTA 902
RG2 DIODE
50071
555 ic
IC 555
RT25
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ST T4 3560
Abstract: T2 AL 250V 150Vt GA600HD25S
Text: PD - 94341 GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DOUBLE INT-A-Pak Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package
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GA600HD25S
ST T4 3560
T2 AL 250V
150Vt
GA600HD25S
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TC-100
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KGF40N60KDA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.
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KGF40N60KDA
TC-100
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IGBT DRIVE 50V 300A
Abstract: LTA 902 GA600GD25S AK 1262 igbt "internal thermistor" int-a-pak
Text: PD -50071B GA600GD25S SINGLE SWITCH IGBT DOUBLE INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package
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-50071B
GA600GD25S
Collect52-7105
IGBT DRIVE 50V 300A
LTA 902
GA600GD25S
AK 1262
igbt "internal thermistor" int-a-pak
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GA600GD25S
Abstract: CGC SWITCH OF IGBT 1000A 1000V
Text: PD - 50071A PRELIMINARY GA600GD25S SINGLE SWITCH IGBT DOUBLE INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package
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0071A
GA600GD25S
GA600GD25S
CGC SWITCH
OF IGBT 1000A 1000V
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OM9405SM
Abstract: Omnirel
Text: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246, www.omnirel.com OM9405SM DUAL IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A FEATURES • • • • Rugged Plug-In Package Built in Short Circuit Protection with Fault Output
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OM9405SM
2200pF
10kHz
100uH
OM9405SM
Omnirel
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KGT50N60KDA
Abstract: 50N60KDA KGT50N60 25a812 gate turn-off 50N60 KEC LOT NO
Text: SEMICONDUCTOR KGT50N60KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.
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KGT50N60KDA
KGT50N60KDA
50N60KDA
KGT50N60
25a812
gate turn-off
50N60
KEC LOT NO
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kgt40n60kda
Abstract: 40N60KDA kec T2 40N60K
Text: SEMICONDUCTOR KGT40N60KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.
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KGT40N60KDA
kgt40n60kda
40N60KDA
kec T2
40N60K
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30n60k
Abstract: KGT30N60KDA kgt30n60
Text: SEMICONDUCTOR KGT30N60KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.
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KGT30N60KDA
30n60k
KGT30N60KDA
kgt30n60
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FM2G300US60
Abstract: No abstract text available
Text: IGBT FM2G300US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is
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FM2G300US60
FM2G300US60
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20N60KDA
Abstract: KGT20N60KDA
Text: SEMICONDUCTOR KGT20N60KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.
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KGT20N60KDA
20N60KDA
KGT20N60KDA
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FMBL1G300US60
Abstract: No abstract text available
Text: IGBT FMBL1G300US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power
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FMBL1G300US60
E209204
FMBL1G300US60
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k15t60
Abstract: FAST RECOVERY DIODE 200ns 8A 40V IKP15N60T PG-TO-220-3-1 marking k15t60 ikp15n60
Text: IKP15N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKP15N60T
k15t60
FAST RECOVERY DIODE 200ns 8A 40V
IKP15N60T
PG-TO-220-3-1
marking k15t60
ikp15n60
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Untitled
Abstract: No abstract text available
Text: IKP20N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
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IKP20N60T
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Untitled
Abstract: No abstract text available
Text: IKW20N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
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IKW20N60T
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k15t60
Abstract: IKP15N60T
Text: IKP15N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKP15N60T
k15t60
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Untitled
Abstract: No abstract text available
Text: IKA15N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs
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IKA15N60T
P-TO-220-3-31
O-220
IKA15N60T
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IRGDDN600K06
Abstract: 30V 600A igbt 600A 500v igbt mosfet 600V 600A circuit INT-A-PAK Package int-a-pak OF IGBT 600A 600V 10 600a - 030 DOUBLE INT-A-PAK Package
Text: Provisional Data Sheet PD-9.1197 Í^ R e c tifi^ gggjHecmier IRGDDN600K06 ir g r d n 600K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"
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IRGDDN600K06
IRGRDN600K06
C-1016
MA55455
30V 600A igbt
600A 500v igbt
mosfet 600V 600A circuit
INT-A-PAK Package
int-a-pak
OF IGBT 600A 600V
10 600a - 030
DOUBLE INT-A-PAK Package
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DOUBLE INT-A-PAK Package
Abstract: No abstract text available
Text: Provisional Data Sheet PD-9.1176 International ^Rectifier IRG DDN600M06 IRG RDN600M06 “SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A .Rugged Design •Simple gate-drive • Switching-Loss Rating includes all “tail"
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DDN600M06
RDN600M06
Outline13
C-456
DOUBLE INT-A-PAK Package
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IRGDDN600K06
Abstract: mosfet 600V 600A circuit power mosfet 600v 600A lm 2604 vqe 208 e
Text: International Provisional Data Sheet PD-9.1197 IRGDDN600K06 1RGRDN600K06 ^R ectifier "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail* losses
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IRGDDN600K06
1RGRDN600K06
C-1016
mosfet 600V 600A circuit
power mosfet 600v 600A
lm 2604
vqe 208 e
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IRGDDN600M06
Abstract: power mosfet 600v 600A IRGRDN600M06 mosfet 600V 600A circuit
Text: International S Rectifier Provisional Data Sheet P D -9 .1176 IRGDDN600M06 IRGRDN600MQ6 "SINGLE SWITCH" IGBT DOUBLE -A-PAK Low conduction loss IGBT IR G D D . IR G R D . ? • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"
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IRGDDN600M06
IRGRDN600M06
Outline13
C-456
SS452
power mosfet 600v 600A
IRGRDN600M06
mosfet 600V 600A circuit
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Untitled
Abstract: No abstract text available
Text: International l R Rectifier preliminary SINGLE SWITCH IGBT DOUBLE INT-A-PAK PD-50071A G A600G D25S Standard Speed IGBT Features • S tan dard speed, op tim ized fo r ba tte ry pow ered application • V e ry low con du ction losses • H E X F R E D ™ an tipa ralle l diode s w ith ultra-soft
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PD-50071A
A600G
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