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    30V 28A MOSFET Search Results

    30V 28A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    30V 28A MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RS1E280

    Abstract: No abstract text available
    Text: RS1E280GN Nch 30V 28A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 2.6mW RDS(on) at 4.5V (Max.) 3.3mW ID 28A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source


    Original     		PDF RS1E280GN R1102A RS1E280

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET  FEATURES * RDS ON < 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL


    Original     		PDF UT40N03T UT40N03TL-TA3-T UT40N03TG-TA3-T O-220 UT40N03TL-TM3-T UT40N03TG-TM3-T O-251 UT40N03TL-TN3-R UT40N03TG-TN3-R O-252

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain


    Original     		PDF UT40N03T UT40N03TL-TA3-T UT40N03TG-TA3-T UT40N03TL-TM3-R UT40N03TG-TM3-R UT40N03TL-TN3-R UT40N03TG-TN3-R UT40N03TL-TN3-T UT40N03TG-TN3-T UT40N03TL-TQ2-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain


    Original     		PDF UT40N03T UT40N03TL-TA3-T UT40N03TG-TA3-T UT40N03TL-TM3-T UT40N03TG-TM3-T UT40N03TL-TN3-R UT40N03TG-TN3-R UT40N03TL-TN3-T UT40N03TG-TN3-T UT40N03TL-TQ2-R

    Untitled

    Abstract: No abstract text available
    Text: AP40T03GI RoHS-compliant Product Advanced Power Electronics Corp. Low Gate Charge N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS ON Single Drive Requirement Lower On-resistance ID G 30V 25m 28A S Description Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP40T03GI O-252 O-220CFM 100us 100ms

    40T03GJ

    Abstract: 40t03gh 40T03G 40t03
    Text: AP40T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D 30V RDS ON Low Gate Charge Fast Switching 25m ID G 28A S Description Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP40T03GH/J O-252 AP40T03GJ) O-251 O-251 40T03GJ 40T03GJ 40t03gh 40T03G 40t03

    GE40T03

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/11/22 REVISED DATE : GE40T03 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 25m 28A Description The GE40T03 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GE40T03 GE40T03 O-220)

    GI40T03

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/11/22 REVISED DATE : GI40T 03 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 25m 28A Description The GI40T03 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GI40T GI40T03 O-251) O-251 GI40T03

    GU40T03

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/11/22 REVISED DATE : GU40T 03 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 25m 28A Description The GU40T03 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GU40T GU40T03 O-263 GU40T03

    GJ40T03

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/11/22 REVISED DATE : GJ40T 03 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 25m 28A Description The GJ40T03 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF GJ40T GJ40T03 O-252 O-252 70eserved. GJ40T03

    Untitled

    Abstract: No abstract text available
    Text: AP40T03GS/P Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D Simple Drive Requirement 30V RDS ON Low Gate Charge Fast Switching ID G RoHS Compliant 25m 28A S Description The Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP40T03GS/P O-263 O-252 commercialTO-263 AP40T03GP) AP40T03J) 100us 100ms

    STL28NF3LL

    Abstract: No abstract text available
    Text: STL28NF3LL N-CHANNEL 30V - 0.0055Ω - 28A PowerFLAT LOW GATE CHARGE STripFET™ MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STL28NF3LL 30 V < 0.0065 Ω 28 A TYPICAL RDS(on) = 0.0055Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE • ■


    Original     		PDF STL28NF3LL STL28NF3LL

    40t03gh

    Abstract: 40T03GJ 40T03G 40t03 AP40T03GJ AP40T03GH marking codes transistors SSs 40T03GH transistor N-CHANNEL ENHANCEMENT MODE POWER MOSFET mosfet low vgs
    Text: AP40T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 30V RDS ON 25mΩ ID G 28A S Description Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP40T03GH/J O-252 AP40T03GJ) O-251 O-251 40T03GJ 40t03gh 40T03GJ 40T03G 40t03 AP40T03GJ AP40T03GH marking codes transistors SSs 40T03GH transistor N-CHANNEL ENHANCEMENT MODE POWER MOSFET mosfet low vgs

    Untitled

    Abstract: No abstract text available
    Text: STL28NF3LL N-CHANNEL 30V - 0.0055Ω - 28A PowerFLAT LOW GATE CHARGE STripFET MOSFET PRELIMINARY DATA TYPE VDSS R DS on ID STL28NF3LL 30 V < 0.0065 Ω 28 A • ■ ■ TYPICAL RDS(on) = 0.0055Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE


    Original     		PDF STL28NF3LL

    AP40T03GI

    Abstract: No abstract text available
    Text: AP40T03GI RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Single Drive Requirement ▼ Lower On-resistance BVDSS 30V RDS ON 25mΩ ID G 28A S Description Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP40T03GI O-252 O-220CFM 100us 100ms AP40T03GI

    Untitled

    Abstract: No abstract text available
    Text: AP40T03GI-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Single Drive Requirement ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free BVDSS 30V RDS ON 25mΩ ID G 28A S Description


    Original     		PDF AP40T03GI-HF O-220CFM 100us 100ms

    Untitled

    Abstract: No abstract text available
    Text: FDMS8660AS N-Channel tm PowerTrench SyncFETTM 30V, 49A, 2.1m: Features General Description „ Max rDS on = 2.1m: at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		PDF FDMS8660AS FDMS8660AS

    STL28NF3LL

    Abstract: No abstract text available
    Text: STL28NF3LL N-CHANNEL 30V - 0.0055Ω - 28A PowerFLAT LOW GATE CHARGE STripFET™ MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STL28NF3LL 30 V < 0.0065 Ω 28 A • ■ ■ TYPICAL RDS(on) = 0.0055Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE


    Original     		PDF STL28NF3LL STL28NF3LL

    STL28NF3LL

    Abstract: No abstract text available
    Text: STL28NF3LL N-CHANNEL 30V - 0.0055Ω - 28A PowerFLAT LOW GATE CHARGE STripFET MOSFET TARGET DATA TYPE VDSS RDS on ID STL28NF3LL 30 V < 0.0065 Ω 28 A • ■ ■ TYPICAL RDS(on) = 0.0055Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE DESCRIPTION


    Original     		PDF STL28NF3LL STL28NF3LL

    FDMS8672AS

    Abstract: No abstract text available
    Text: FDMS8672AS N-Channel PowerTrench SyncFET tm TM 30V, 28A, 5.0mΩ Features General Description „ Max rDS on = 5.0mΩ at VGS = 10V, ID = 18A The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		PDF FDMS8672AS FDMS8672AS

    FDMS8660AS

    Abstract: 4410 mosfet fairchild top marking fdms8660
    Text: FDMS8660AS N-Channel PowerTrench SyncFET TM tm  30V, 49A, 2.1m: Features General Description „ Max rDS on = 2.1m: at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		PDF FDMS8660AS FDMS8660AS 4410 mosfet fairchild top marking fdms8660

    fairchild top marking

    Abstract: FDMS8672AS
    Text: FDMS8672AS N-Channel PowerTrench SyncFET TM tm  30V, 28A, 5.0m: Features General Description „ Max rDS on = 5.0m: at VGS = 10V, ID = 18A The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		PDF FDMS8672AS FDMS8672AS fairchild top marking

    FDMS8660AS

    Abstract: No abstract text available
    Text: FDMS8660AS N-Channel PowerTrench SyncFET tm TM 30V, 49A, 2.1mΩ Features General Description „ Max rDS on = 2.1mΩ at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		PDF FDMS8660AS FDMS8660AS

    Untitled

    Abstract: No abstract text available
    Text: FDMS8692 tm N-Channel PowerTrench MOSFET 30V, 28A, 9.0mΩ Features General Description „ Max rDS on = 9.0mΩ at VGS = 10V, ID = 12A The FDMS8692 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest


    Original     		PDF FDMS8692 FDMS8692