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    30N50Q Search Results

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    30N50Q Price and Stock

    Littelfuse Inc IXFH30N50Q3

    MOSFET N-CH 500V 30A TO247AD
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    DigiKey IXFH30N50Q3 Tube 367 1
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    Newark IXFH30N50Q3 Bulk 300
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    IXYS Corporation IXFR30N50Q

    MOSFET N-CH 500V 30A ISOPLUS247
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    IXYS Corporation IXFH30N50Q

    MOSFET N-CH 500V 30A TO247AD
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    IXYS Corporation IXFK30N50Q

    MOSFET N-CH 500V 30A TO264AA
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    IXYS Corporation IXFX30N50Q

    MOSFET N-CH 500V 30A PLUS247-3
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    30N50Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFR32N50

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 500 V 29 A 500 V 30 A trr ≤ 250 ns RDS(on) 0.16 Ω 0.15 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 247TM IXFR32N50

    IXFR32N50

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 125OC IXFR32N50

    fast IXFX

    Abstract: MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q
    Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q ID25 RDS on 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 30N50Q 32N50Q 247TM O-264 125OC 728B1 fast IXFX MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q

    30N50

    Abstract: 32N50 32N50Q IXFR30N50 IXFR32N50
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions


    Original     		PDF ISOPLUS247TM 30N50Q 32N50Q 247TM 125OC 30N50 32N50 32N50Q IXFR30N50 IXFR32N50

    Untitled

    Abstract: No abstract text available
    Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C,


    Original     		PDF 30N50Q 32N50Q 32N50 125OC

    32N50

    Abstract: 125OC 32N50Q
    Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q ID25 RDS on 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 30N50Q 32N50Q 247TM O-264 125OC 728B1 32N50 125OC 32N50Q

    32N50Q

    Abstract: 30N50Q 125OC 30n50
    Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient


    Original     		PDF 30N50Q 32N50Q 125OC 32N50Q 30N50Q 125OC 30n50

    IXFR32N50

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions


    Original     		PDF ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 IXFR32N50

    32N50Q

    Abstract: BTAA
    Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C IDM TC = 25°C,


    Original     		PDF 30N50Q 32N50Q 247TM 32N50Q BTAA

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    30N50

    Abstract: 32N50 32N50Q ISOPLUS247 IXFR30N50 lt 715 IXFR32N50
    Text: □ IXYS Advanced Technical Information Vv DSS HiPerFET Power MOSFETs ISOPLUS247™ IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface p ^D25 29 A 500 V 30 A 500 V t rr £ 250 ns DS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low t , HDMOS™ Family


    OCR Scan     		PDF ISOPLUS247â 30N50Q 32N50Q 30N50 32N50 32N50 ISOPLUS247 IXFR30N50 lt 715 IXFR32N50