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    30MHZ TO 512MHZ Search Results

    30MHZ TO 512MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MAX4352EUK-T Rochester Electronics LLC OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN Visit Rochester Electronics LLC Buy
    ADC1038CIWM Rochester Electronics LLC ADC, Successive Approximation, 10-Bit, 1 Func, 8 Channel, Serial Access, PDSO20, SOP-20 Visit Rochester Electronics LLC Buy
    TL505CN Rochester Electronics LLC ADC, Dual-Slope, 10-Bit, 1 Func, 1 Channel, Serial Access, BIMOS, PDIP14, PACKAGE-14 Visit Rochester Electronics LLC Buy
    ML2258CIQ Rochester Electronics LLC ADC, Successive Approximation, 8-Bit, 1 Func, 8 Channel, Parallel, 8 Bits Access, PQCC28, PLASTIC, LCC-28 Visit Rochester Electronics LLC Buy
    CA3310AM Rochester Electronics LLC ADC, Successive Approximation, 10-Bit, 1 Func, 1 Channel, Parallel, Word Access, CMOS, PDSO24, PLASTIC, MS-013AD, SOIC-24 Visit Rochester Electronics LLC Buy

    30MHZ TO 512MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RFHA1003S2

    Abstract: No abstract text available
    Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1003 30MHz 512MHz, RFHA1003 512MHz DS121114 RFHA1003S2

    RFHA1003SQ

    Abstract: 30MHz to 512MHz
    Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1003 30MHz 512MHz, RFHA1003 512MHz DS120216 RFHA1003SQ 30MHz to 512MHz

    Untitled

    Abstract: No abstract text available
    Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1003 30MHz 512MHz, 512MHz DS120216

    Untitled

    Abstract: No abstract text available
    Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1003 30MHz 512MHz, RFHA1003 512MHz DS120216

    Gan hemt transistor RFMD

    Abstract: DS111007 tl 4941
    Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1003 30MHz 512MHz, RFHA1003 512MHz DS111007 Gan hemt transistor RFMD DS111007 tl 4941

    rfha1003

    Abstract: No abstract text available
    Text: RFHA1003 RFHA1003 30 MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1003 512MHz, RFHA1003 30MHz 512MHz DS120102

    RFHA1003S2

    Abstract: No abstract text available
    Text: RFHA1003 RFHA1003 9W GaN Wide-Band Power Amplifier 30MHz to 512MHz The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density


    Original     		PDF RFHA1003 30MHz 512MHz RFHA1003 DS131018 RFHA1003S2

    TB217

    Abstract: PORCELAIN
    Text: May 16, 2012 TB217#3 Frequency=30-512MHz Pout=10W Gain=10dB Vds=28Vdc Idq=0.2A Efficiency=30 to 55% LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com May 16, 2012 TB217#3 Gain/Efficiency vs Frequency: Vds=28Vdc, Idq=0.2A, Pout=10W


    Original     		PDF TB217 30-512MHz 28Vdc LP801 28Vdc, 30MHz RHM10kECT-ND PORCELAIN

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices PCM001A Power RF Amplifiers Power = 15.0 Watts Bandwidth = 30 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The PCM001A is a 15 Watt, 2 stage high gain amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is


    Original     		PDF PCM001A PCM001A PCM002 28Vdc 30MHz 512MHz

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices MADQ02 Power RF Amplifiers Power = 15.0 Watts Bandwidth = 30 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MADQ02 is a 15 Watt, 2 stage high gain amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is


    Original     		PDF MADQ02 MADQ02 MBDQ01 14dBm 512MHz 28Vdc

    MBDQ01

    Abstract: MDDQ02 30MHz to 512MHz
    Text: polyfet rf devices MDDQ02 Power RF Amplifiers Power = 15.0 Watts Bandwidth = 30 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MDDQ02 is a 15 Watt, 2 stage high gain amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is


    Original     		PDF MDDQ02 MDDQ02 MBDQ01 14dBm 512MHz 28Vdc 30MHz to 512MHz

    mgdq01

    Abstract: MBDQ01
    Text: polyfet rf devices MGDQ01 Power RF Amplifiers Power = 15.0 Watts Bandwidth = 30 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MGDQ01 is a 15 Watt, 2 stage high gain amplifier covering a bandwidth of 30-512 Mhz using SMA connectors for RF in and out. This


    Original     		PDF MGDQ01 MGDQ01 MBDQ01 14dBm 512MHz 28Vdc

    MDDQ02

    Abstract: module MBDQ01 15W20
    Text: polyfet rf devices MDDQ02 Power RF Amplifiers Power = 15.0 Watts Bandwidth = 30 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MDDQ02 is a 15 Watt, 2 stage high gain amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is


    Original     		PDF MDDQ02 MDDQ02 MBDQ01 14dBm 512MHz 28Vdc module 15W20

    MADQ02

    Abstract: module MBDQ01
    Text: polyfet rf devices MADQ02 Power RF Amplifiers Power = 15.0 Watts Bandwidth = 30 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MADQ02 is a 15 Watt, 2 stage high gain amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is


    Original     		PDF MADQ02 MADQ02 MBDQ01 14dBm 512MHz 28Vdc module

    k117

    Abstract: CT5001 T160-C4 VT30-90 Lorch DIODE S3l Equalizer 4000MHz L16 8pin varactor VT400
    Text: BOWEI Content BOWEI INTEGRATED CIRCUITS CO.,LTD. LC Filter Outline Drawings- 2 Miniature LC Bandpass Filter- 9 Miniature LC Lowpass Filter - 15


    Original     		PDF 90MHz) LBM043A 100MHz, 100MHz LBM017A-85 LBM700A-85 Page55) k117 CT5001 T160-C4 VT30-90 Lorch DIODE S3l Equalizer 4000MHz L16 8pin varactor VT400

    VHF50HN

    Abstract: is-50nx-c2 capacitor 10nj IS-B50LN-C2 IS-MR50LNZ 15 IS-50NX-C1 IS-B50LN-C1 wireless walkie talkie circuit IS-VU50HN IS-CT50HN
    Text: G L O B A L L I G H T N I N G S O L U T I O N S PolyPhaser Corporation Product Catalog PRODUCT CATALOG ac Power Protectors dc Power Protectors Grounding Solutions Protected Bias-T dc Blocked Filters Combiner Protectors dc Blocked Single Transmitter Twisted Pair Cable Protectors


    Original     		PDF

    LR401

    Abstract: TB-160 FLR401 tb160
    Text: TB-160 LR401 Pin vs Pout Freq=30MHz Vds=28Vdc Idq=800ma 80 16.0 15.0 60 Pout P1dB=60W 14.0 40 13.0 Gain 20 Efficiency @60W= 50% 12.0 11.0 1 2 3 4 5 6 Pin in Watts TB-160 LR401 Pin vs Pout Freq=250MHz Vds=28Vdc Idq=800ma 100 15.0 P1dB=60W 14.5 80 14.0 60 13.5


    Original     		PDF TB-160 LR401 30MHz 28Vdc 800ma 250MHz FLR401 tb160

    Untitled

    Abstract: No abstract text available
    Text: Specification for a Switched 7 LC Filter Assembly MtronPTI P/N: SA0068 I. General & Electrical Requirements Parameter Minimum Frequency Cutoff Frequency Insertion Loss Rejection @ 2nd Harmonic Ultimate Attenuation, Over 1.0GHz to 1.5GHz Passband Signal Power, CW


    Original     		PDF SA0068 30MHz 43MHz 65MHz 90MHz 116MHz 174MHz

    L8821P

    Abstract: LK421
    Text: Polyfet RF Devices TB-170 L8821P->LK421 Pout vs Pin Freq=30MHz Vds=12.5Vdc Idq=1.2A 24 27.0 Linear @5W 18 26.0 Pout 12 25.0 Gain Efficiency @15W= 35% 6 24.0 23.0 0.02 0.04 Pin in Watts Page 1 0.06 0.08 0.1 Gain in dB Pout in Watts P1dB=14W Polyfet RF Devices


    Original     		PDF TB-170 L8821P-- LK421 30MHz 250MHz L8821P

    166A

    Abstract: TB166A LQ801 FT50A-43 LB401 10nF R20 10K ohm TB166 C33-C38 30MHz to 512MHz
    Text: Polyfet RF Devices TB-166A LQ801-> LB401 Gain/Efficiency vs Freq; Vds=28Vdc Idq=1.2A 30 100 27 90 24 80 Gain 21 70 15 Pout fixed at 60W 60 Efficiency 12 50 9 40 6 30 3 40 80 120 160 200 240 280 Freq in MHz 320 360 400 440 480 20 520 Eff in % Gain in dB 18


    Original     		PDF TB-166A LQ801---> LB401 28Vdc 30MHz 166A TB166A LQ801 FT50A-43 10nF R20 10K ohm TB166 C33-C38 30MHz to 512MHz

    MSCQ01

    Abstract: module rf amplifier 100w rf power amplifier 100w AMPLIFIER 2 MHZ 100W 150M 100W POWER AMPLIFIER RF power amplifier MHz
    Text: polyfet rf devices MSCQ01 Power RF Amplifiers Power = 100.0 Watts Bandwidth = 30 to 512 Mhz Gain = 8.0 dB Vdd = 26.0 Volts 50 ohms Input/Output Impedance Description The MSCQ01 is a 100 Watt, single stage amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is


    Original     		PDF MSCQ01 MSCQ01 00YFET 24Vdc, 100KHz 24Vdc 30-512MHz, module rf amplifier 100w rf power amplifier 100w AMPLIFIER 2 MHZ 100W 150M 100W POWER AMPLIFIER RF power amplifier MHz

    LBM700A-85

    Abstract: LBM041A512-85 LBM017A-85 LBM037A-85 LBM038A-85 LBM039A-85 LBM040A-85 LBM041A-85 chebyshev
    Text: BOWEI LBM017A-85~LBM700A-85 Digitally tuned Hopping filter Frequency range：30~700MHz Digitally tuned Hopping filter BOWEI INTEGRATED CIRCUITS CO.,LTD. Features Tuning Control: 8 bit parallel（TTL Level compatible） Wide dynamic ：Input P-1 =30dBm 2 ploe 0.1dB Chebyshev Response


    Original     		PDF LBM017A-85 LBM700A-85 range30 700MHz 30dBm 30MHz) 120MHz) 00V/1 LBM700A-85 LBM041A512-85 LBM037A-85 LBM038A-85 LBM039A-85 LBM040A-85 LBM041A-85 chebyshev

    EPIRB

    Abstract: SD2942 SD3933 class AB hf bipolar PD55015 SONAR car alarm SD57045 "class AB Linear" hf PD55035 sd2931 fm
    Text: LDMOS in plastic packages HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications Freq. [MHz] Pout [W] Gain typ [dB] VDD [V] Class Eff. (Typ) [%] Package PD54003 500 3 12 7.5 AB 55 PowerSO-10RF• PD54008


    Original     		PDF PowerSO-10RF PD54003 PowerSO-10RF· PD54008 PD55003 PD55008 PD55015 EPIRB SD2942 SD3933 class AB hf bipolar PD55015 SONAR car alarm SD57045 "class AB Linear" hf PD55035 sd2931 fm

    S-AU16VH

    Abstract: S-AU16H S-AU16L S-AU16SH
    Text: RF POWER AMPLIFIER MODULE S-AU16H, AU16L, AU16SH,AU16VH UHF POWER AMPLIFIER MODULE Unit in nnn HANDY TRANSCEIVER 42±a25 MAXIMUM RATINGS <Tc=25°C) SYMBOL CHARACTERISTIC DC Supply Voltage UNIT RATING VCC 16 V DC Supply Voltage v C0N 16 V DC Supply Voltage


    OCR Scan     		PDF S-AU16H, AU16L, AU16SH AU16VH 150mW 30MHz S-AU16L -470MHz S-AU16H S-AU16VH S-AU16SH