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Rochester Electronics LLC CY7C451-30LMB IC FIFO ASYNC 512X9 20NS 32CLCC
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DigiKey	CY7C451-30LMB	Bulk			7	1 - 10 $46.34 100 $46.34 1000 $46.34 10000 $46.34	Buy Now
Rochester Electronics LLC PALC16R6-30LMB OT PLD, 30NS, PAL-TYPE
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DigiKey	PALC16R6-30LMB	Bulk			20	1 - 10 - 100 $15.61 1000 $15.61 10000 $15.61	Buy Now
Teledyne e2v QP7C235A-30LMB PROM, 1K X 8, REGISTERED, 30 NS - Rail/Tube (Alt: QP7C235A-30LMB)
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Avnet Americas	QP7C235A-30LMB	Tube			250	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Teledyne e2v PLDC20G10-30LMB PROG. LOGIC DEVICE, 30 NS PROP. DELAY - Rail/Tube (Alt: PLDC20G10-30LMB)
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Avnet Americas	PLDC20G10-30LMB	Tube			250	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Teledyne e2v CY7C433-30LMB FIFO MEMORY, 4K X 9, 30 NS ACCESS TIME - Rail/Tube (Alt: CY7C433-30LMB)
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Avnet Americas	CY7C433-30LMB	Tube			250	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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30LMB Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
20G10-25 Abstract: 20G10-30 20G10B-20 20G10B-25 12L10 16L6 18L4 20L10 20L8 20G108 Text: PLDC20G10B/PLDC20G10 CMOS Generic 24-Pin Reprogrammable Logic Device Features • CMOS EPROM technology for reprogrammability • Highly reliable — Uses proven EPROM technology • Fast — Commercial: tPD = 15 ns, tCO = 10 ns, tS = 12 ns — Fully AC and DC tested	Original	PLDC20G10B/PLDC20G10 24-Pin 20G10-25 20G10-30 20G10B-20 20G10B-25 12L10 16L6 18L4 20L10 20L8 20G108	PDF
transistor c331 Abstract: c331 transistor C3318 C3317 C331 C3311 C331 datasheet CY7C331 20HC c331 equivalent Text: CY7C331 Asynchronous Registered EPLD Features • Low power — 90 mA typical ICC quiescent • Twelve I/O macrocells each having: — One state flip-flop with an XOR sum-of-products input — 180 mA ICC maximum — UV-erasable and reprogrammable — One feedback flip-flop with input coming from the	Original	CY7C331 CY7C331 transistor c331 c331 transistor C3318 C3317 C331 C3311 C331 datasheet 20HC c331 equivalent	PDF
12L10 Abstract: 16L6 20L10 20L8 PLDC20G10 PLDC20G10B ULTRA37000 Text: PLDC20G10B PLDC20G10 USE ULTRA37000 FOR ALL NEW DESIGNS CMOS Generic 24-Pin Reprogrammable Logic Device Features • CMOS EPROM technology for reprogrammability • Highly reliable • Fast — Commercial: tPD = 15 ns, tCO = 10 ns, tS = 12 ns — Military: tPD = 20 ns, tCO = 15 ns, tS = 15 ns	Original	PLDC20G10B PLDC20G10 ULTRA37000TM 24-Pin 20L10, 12L10, PLDC20G10B/PLDC20G10 12L10 16L6 20L10 20L8 PLDC20G10 PLDC20G10B ULTRA37000	PDF
CY7C419 Abstract: CY7C420 CY7C421 CY7C425 IDT7200 IDT7201 IDT7202 IDT7203 IDT7204 7C43 Text: fax id: 5404 /25/29/ CY7C419/21/25/29/33 256 x 9, 512 x 9, 1K x 9, 2K x 9, 4K x 9 Cascadable FIFO Features • 256 x 9, 512 x 9, 1,024 x 9, 2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write independent of	Original	CY7C419/21/25/29/33 300-mil IDT7200, IDT7201, IDT7202, IDT7203, IDT7204 CY7C419 CY7C420 CY7C421 CY7C425 IDT7200 IDT7201 IDT7202 IDT7203 IDT7204 7C43	PDF
20G10 Abstract: 20G10B-20 12L10 16L6 18L4 20L10 20L8 Text: fax id: 6014 1P LDC20 G1 0B/P LD C20 G1 0 PLDC20G10B/PLDC20G10 CMOS Generic 24-Pin Reprogrammable Logic Device Features • CMOS EPROM technology for reprogrammability • Highly reliable — Uses proven EPROM technology • Fast — Commercial: tPD = 15 ns, tCO = 10 ns, tS = 12 ns	Original	LDC20 PLDC20G10B/PLDC20G10 24-Pin 20G10 20G10B-20 12L10 16L6 18L4 20L10 20L8	PDF
247Q Abstract: PALC16R6-25WC carrier 40QMB CERAMIC LEADLESS CHIP CARRIER PALC16R4-35WC 16L8 16R4 16R6 16R8 PALC20 Text: PAL C20 Series CYPRESS Features • • CMOS EPROM technology for repro grammability • High performance at quarter power Reprogrammable CMOS PALC 16L8,16R8, 16R6, 16R4 High reliability — Proven EPROM technology — > 1500V input protection from electrostatic discharge	OCR Scan	PALC20 PALC16R8-35WC/WC 20-Lead 300-Mil) PALC16R8â 40DMB PALC16R8-40LMB 20-Pin 247Q PALC16R6-25WC carrier 40QMB CERAMIC LEADLESS CHIP CARRIER PALC16R4-35WC 16L8 16R4 16R6 16R8	PDF
CY7C225A Abstract: No abstract text available Text: CY7C225A '= C Y P R E S S Features • CMOS for optimum speed/power • High speed — 18 ns address set-up — 12 ns clock to output • Low power — 495 mW commercial — 660 mW (military) • Synchronous and asynchronous out put enables • On-chip edge-triggered registers	OCR Scan	CY7C225A 300-mil, 24-pin 28-pin CY7C225A CY7C225A-40PC 24-Lead 300-Mil) CY7C225Aâ	PDF
L496D Abstract: 9l reset CY7C331 ST L11922 0423-J Text: CY7C331 -W C Y P R E S S Asynchronous Registered EPLD Features • TWelve I/O macrocells each having: — One state flip-flop with an XOR sum-of-products input — One feedback flip-flop with input coining from the I/O pin — Independent product term set,	OCR Scan	CY7C331 28-pin CY7C331 -40TMB 28-Lead CY7C331â 40WMB 28-Lead 300-Mil) L496D 9l reset ST L11922 0423-J	PDF
16L88 Abstract: PALC20 PALC16R6-20DMB cypress 16R4 PALC16L8-30DMB 16L8 16R4 16R6 16R8 PALC16R6-30DMB Text: 256=^2 ooQb^o s d c y p MbE D CYPRESS SEMICONDUCTOR PAL C20 Series ~ SEMICONDUCTOR Features • CMOS EPROM technology for « p ro grammability • High performance at quarter power • — tpo = 25 ns — ts = 20 ns — tco = 15 ns — Ice = 45 mA • High performance at military	OCR Scan	PALC16R8L-35VC PALC16R8L-35WC PALC16R8â PALC16R8-35PC/PI PALC16R8-35VC/VC PALC16R8-35WCAVC PALC16R8-40DMB PALC16R8-40KMB PALC16R8-40LMB PALC16R8-40QMB 16L88 PALC20 PALC16R6-20DMB cypress 16R4 PALC16L8-30DMB 16L8 16R4 16R6 16R8 PALC16R6-30DMB	PDF
Untitled Abstract: No abstract text available Text: CY7C451 CY7C453 m r cypress Functional Description Features • 512 x 9 CY7C451 and 2,048 x 9 (CY7C453) FIFO buffer memory • Expandable in width and depth • High-speed 70-MHz standalone; 50-MHz cascaded • Supports free-running 50% duly cycle clock inputs	OCR Scan	CY7C451 CY7C453 CY7C451) CY7C453) 70-MHz 50-MHz 300-mil 32-pin DD15475	PDF
Untitled Abstract: No abstract text available Text: Asynchronous Registered EPLD 13 inputs, 12 feedback VO pins, plus 6 shared I/O macrocell feedbacks for a total of 31 true and complementary inpnts High speed: 20 ns maximum tpo Security bit Space-saving 28-pin slim-line DIP package; also available in 28-pin	OCR Scan	28-pin 28-pin termW22 28-Lead 300-Mil) CY7C331 001305b	PDF
7c331-35 Abstract: No abstract text available Text: s :^é= , CY7C331 •jS QYPRESS -■ W SEMICONDUCTOR Asynchronous Registered EPLD Features • TVelve I/O macrocells each having: — One state flip-flop with an XOR sum-of-products input — One feedback flip-flop with input coining from the I/O pin — Independent product term set,	OCR Scan	CY7C331 Space-savi22 7c331-35	PDF
AC-231 Abstract: No abstract text available Text: CY7B201 PRELIMINARY s CYPRESS . r SEMICONDUCTOR Reprogrammable 128K x 8 Power-Down PROM Features Functional Description • BiFAMOS for optimum speed/ power The CY7B201 is a high-performance 1-megabit BiFAMOS PROM organized in 128 Kbytes. It is available in 32-pin,	OCR Scan	CY7B201 32-pin, 600-mil 32-pin CY7B201 CY7B201â AC-231	PDF
Untitled Abstract: No abstract text available Text: CY7B210 PRELIMINARY CYPRESS SEMICONDUCTOR Features Product Characteristics • BiFAMOS for optimum speed/ power • Highspeed — *a a = 25 ns max. commercial The CY7B210 is a high-performance 1-megabit BiFAMOS PROM organized in 64K words by 16 bits wide. It is available in	OCR Scan	CY7B210 40-pin, 600-mil CY7B210 44-pin CY7B210â	PDF

CY7C429-25PC Abstract: CY7C420 CY7C421 CY7C425 CY7C429 IDT7201 IDT7202 IDT7203 CY7C429-30DC vcy7 Text: bSE D • S S ö ^ b b E O O l O bB l bTD I CYPRESS SEMICONDUCTOR CYPRESS SEMICONDUCTOR ICYP CY7C420, CY7C421 CY7C424, CY7C425 CY7C428, CY7C429 Cascadable 512 x 9 FIFO Cascadable lK x 9 FIFO Cascadable 2K x 9 FIFO • TTL compatible • Three-state outputs	OCR Scan	CY7C420, CY7C421 CY7C424, CY7C425 CY7C428, CY7C429 300-miI 300-mil CY7C421, CY7C429-25PC CY7C420 IDT7201 IDT7202 IDT7203 CY7C429-30DC vcy7	PDF
Untitled Abstract: No abstract text available Text: PERFORMANCE SEMICONDUCTOR EOE D • 70L25T7 0D0QS71 S P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CM O S RAM S SCRAMS FEATURES ■ Full CMOS, 6T Cell Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) -15/17/20/25/30/35 ns (Commercial)	OCR Scan	70L25T7 0D0QS71 P4C164/P4C164L Active-15 P4C164L 28-Pin -15PC -15JC -15CC -15LC	PDF
1549T Abstract: EI96 Text: PERFORMANCE SE MI CO NDU CTOR EOE D • TObEST? O O O D m T P4C1282/P4C1282L, P4C1281 /P4C1281L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS 2 PIFSEUMO A -	OCR Scan	P4C1282/P4C1282L, P4C1281 /P4C1281L P4C1281/82 P4C1281L/82L P4C1281/L P4C1282/L -20PC -20JC -20CC 1549T EI96	PDF
ERF 2030 Abstract: ERF 2030 mos fet c455 CY7C455 CY7C456 CY7C457 CY7C447 c4556 C4557 Text: / u h *f o . iviu i l u a y , w w i u u t i r p , 1 Revision: Tuesday, December 14,1993 C Y 7C 455 C Y 7C 456 C Y 7C 457 = = ^ C Y PR K SS p r e l im in a r y 512x18, lK x 18, and 2 K x l8 Cascadable Clocked FIFOs with Programmable Flags Features Functional Description	OCR Scan	CY7C455 CY7C456 CY7C457 CY7C455) CY7C456) CY7C457) 70-MHz 50-MHz 13H2T ERF 2030 ERF 2030 mos fet c455 CY7C457 CY7C447 c4556 C4557	PDF
C2021 m Abstract: C2021 palc16r8 PALC16R 16R4 programming specification ic w6 sem 2015 ic equivalent PALC20 PALC16R6-30WMB Text: K :Æ^ = PAL C20 Series r fÆ CYPRESS :.-. = Sr SEMICONDUCTOR Reprogrammable CMOS PALC 16L8,16R8,16R6,16R4 Features • CMOS EPROM technology for repro grammability • Higb performance at quarter power	OCR Scan	20-pin PALC16R8-30KMB PALC16R8-30LMB PALC16R8-30QMB PALC16R8-- 30WMB PALC16R8L-35LC PALC16R8L-35PC PALC16R8L-35VC PALC16R8L-35WC C2021 m C2021 palc16r8 PALC16R 16R4 programming specification ic w6 sem 2015 ic equivalent PALC20 PALC16R6-30WMB	PDF
P4C1258 Abstract: O513 Text: PERFORMANCE SEMICONDUCTOR 7Ob2517 OOOOfc.41 fl • SOE D P4C1258/P4C1258L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS jA FEATURES ■ High Speed (Equal A ccess and C ycle Tim es) - 20/25/30/35 ns (Commercial) - 25/30/35/45/55 ns (M ilitary) ■ Three-State Outputs	OCR Scan	P4C1258/P4C1258L P4C1258 P4C1258L P4C1258 P4C1258L 144-bit 64Kx4. TTL-compati1258/L -25PC -30PC O513	PDF
B 503 Potentiometers Abstract: cy7c421 COML-55 FF p21 CY7C419 IDT7200 IDT7201 IDT7202 IDT7203 IDT7204 Text: CY7C419/21/25/29/33 r* CYPRESS Features • 256 x 9, 512 x 9,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write independent o f depth/width • Low operating power — I c c i = 35 mA	OCR Scan	CY7C419/21/25/29/33 300-mil IDT7200, IDT7201, IDT7202, IDT7203, IDT7204 256x9 512x9, B 503 Potentiometers cy7c421 COML-55 FF p21 CY7C419 IDT7200 IDT7201 IDT7202 IDT7203 IDT7204	PDF
IC ccu 2030 Abstract: No abstract text available Text: CY7C441 CY7C443 PRELIM INARY CYPRESS .-F ' SEMICONDUCTOR Functional D escription 512 x 9 CY7C441 a n d 2,04« x 9 (CY7C443) F IF O b u ffer memory H igh-speed 70-M Hz o p eratio n S u p p o rts free-ru n n in g 50% duty cycle clock inputs Empty, A lm ost Em pty, a n d A lm ost	OCR Scan	CY7C441 CY7C443 CY7C441) CY7C443) 28-pln application--30LMB CY7C443 30KMB IC ccu 2030	PDF
C3317 Abstract: L1190 CY7331 Text: Asynchronous Registered EPLD Features • TWelve I/O macrocells each having: — One state flip-flop with an XOR sum-of-products input — One feedback flip-flop with input coming from the I/O pin — Independent product term set, reset, and clock inputs on all	OCR Scan	28-pin 28-Lead 28-Lead 300-Mil) CY7C331 0Dlb56b C3317 L1190 CY7331	PDF
CY7C425-15JI Abstract: 7C419 Text: 2 5 6 x 9 , 5 1 2 x 9 , 1K x 9, 2 K x 9 , 4 K x 9 C ascadable FIFO Features • 256 x 9,512 x 9,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write independent of depth/width	OCR Scan	300-mil IDT7200, IDT7291, IDT7202, IDT7203, IDT7204 CY7C419, CY7C420/1, CY7C424/5, CY7C425-15JI 7C419	PDF

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30LMB Price and Stock

Rochester Electronics LLC CY7C451-30LMB

Rochester Electronics LLC PALC16R6-30LMB

Teledyne e2v QP7C235A-30LMB

Teledyne e2v PLDC20G10-30LMB

Teledyne e2v CY7C433-30LMB

30LMB Datasheets Context Search

20G10-25

transistor c331

12L10

CY7C419

20G10

247Q

CY7C225A

L496D

16L88

Untitled

Untitled

7c331-35

AC-231

Untitled

CY7C429-25PC

Untitled

1549T

ERF 2030

C2021 m

P4C1258

B 503 Potentiometers

IC ccu 2030

C3317

CY7C425-15JI