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    30GHZ TRANSISTOR Search Results

    30GHZ TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    30GHZ TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BP 2818

    Abstract: transistor K D 2499 UM 7222 G transistor GaAs FET s parameters
    Text: EC4711 Wide Band Power FET GaAs Field Effect Transistor Description The EC4711 is a Ku band Schottky barrier Field Effect Transistor with 0.5µm Aluminium gate. Individual via hole connection is made between each source pad and the gold plated back face metallization, through the


    Original     		PDF EC4711 EC4711 21dBm 23Ghz 18dBm 30GHz DSEC47117003 BP 2818 transistor K D 2499 UM 7222 G transistor GaAs FET s parameters

    "vlsi technology" abstract for

    Abstract: TRANSISTOR 30GHZ "vlsi technology" abstract Bipolar HJ 30GHz transistor trench TEOS oxide layer complementary npn-pnp Schematics 5250 SiGe PNP transistor high gain PNP RF TRANSISTOR
    Text: A New Complementary Bipolar Process featuring a Very High Speed PNP. M C Wilson, P H Osborne, S Nigrin, S B Goody, J Green, S J Harrington, T Cook, S Thomas and A J Manson. Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K. Abstract This paper introduces "Process HJ" a


    Original     		PDF 20GHz 30GHz, "vlsi technology" abstract for TRANSISTOR 30GHZ "vlsi technology" abstract Bipolar HJ 30GHz transistor trench TEOS oxide layer complementary npn-pnp Schematics 5250 SiGe PNP transistor high gain PNP RF TRANSISTOR

    TRANSISTOR 30GHZ

    Abstract: "vlsi technology" abstract for Marconi Optical Components Bipolar HJ GEC Marconi Materials Technology Schematics 5250 30GHz transistor trench TEOS oxide layer INTERMETal diode
    Text: Process HJ: A 30 GHz NPN and 20 GHz PNP Complementary Bipolar Process for High Linearity RF Circuits. M C Wilson, P H Osborne, S Nigrin, S B Goody, J Green, S J Harrington, T Cook, S Thomas, A J Manson and A Madni Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K.


    Original     		PDF 30GHz 20GHz, TRANSISTOR 30GHZ "vlsi technology" abstract for Marconi Optical Components Bipolar HJ GEC Marconi Materials Technology Schematics 5250 30GHz transistor trench TEOS oxide layer INTERMETal diode

    Untitled

    Abstract: No abstract text available
    Text: GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz HMC1127 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM VDD 2 HMC1127 3 RFIN RFOUT 1 5 VGG1 4 VGG2 13085-001 Output power for 1 dB compression P1dB : 12.5 dBm typical at 8 GHz to 30 GHz Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to


    Original     		PDF HMC1127 HMC112085-028 100pF 3-19-2015-A D13085-0-5/15

    EC2612

    Abstract: ec2612 pHEMT MAR 618 transistor
    Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00 ec2612 pHEMT MAR 618 transistor

    Untitled

    Abstract: No abstract text available
    Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00

    ec2612 pHEMT

    Abstract: pHEMT transistor 30GHz EC2612 TRANSISTOR 30GHZ
    Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron mobility transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26128099 ec2612 pHEMT pHEMT transistor 30GHz TRANSISTOR 30GHZ

    ec2612 phemt

    Abstract: EC2612
    Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor ¦ Chip size : 0.63 x 0.37 x 0.1 mm Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Marc-00 ec2612 phemt

    ec2612 phemt

    Abstract: pHEMT transistor 30GHz EC2612 MAR 618 transistor LS 9814
    Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00 ec2612 phemt pHEMT transistor 30GHz MAR 618 transistor LS 9814

    pHEMT transistor 30GHz

    Abstract: EC2612 ec2612 pHEMT 158467
    Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Marc-00 pHEMT transistor 30GHz ec2612 pHEMT 158467

    Untitled

    Abstract: No abstract text available
    Text: Cardiff Model Lite Datasheet Mesuro is the world’s leading developer of Open Loop Active Harmonic Load Pull solutions, which deliver ground breaking performance improvements in the design and manufacture of RF & microwave devices and amplifiers. Mesuro's unique measurement solutions integrate patented hardware with our WaveForm Engineering


    Original     		PDF 50GHz 30GHz

    CGY2108GS

    Abstract: D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2
    Text: OMMIC Short Form Catalog 2014 KINGS PARK MMIC products from 500MHz to 160GHz Advanced GaAs, InP, GaN processes Epitaxy services PAGE 4-10 PAGE 13-17 PAGE 14 Foundry and FAB+ services PAGE 15-17 Design Center for state of the art custom MMICs Space Heritage and Space qualification services


    Original     		PDF 500MHz 160GHz CGY2108GS D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2

    Buffer Amplifier Ghz

    Abstract: THM2004J
    Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


    Original     		PDF THM2004J THM2004J 50-ohm TAHB09) 30GHz 1000MHz 100MHz Buffer Amplifier Ghz

    THM2003J

    Abstract: Tachyonics
    Text: PRELIMINARY Wideband Linear Amplifier THM2003J SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2003J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


    Original     		PDF THM2003J THM2003J 50-ohm TAHB09) 30GHz 1000MHz 100MHz Tachyonics

    transistor T04

    Abstract: SiGe HBT GAIN BLOCK MMIC AMPLIFIER TRANSISTOR 30GHZ THM2004J TRANSISTOR C 608 Germanium Amplifier Circuit diagram Tachyonics
    Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


    Original     		PDF THM2004J THM2004J 50-ohm TAHB09) 30GHz 1000MHz 100MHz transistor T04 SiGe HBT GAIN BLOCK MMIC AMPLIFIER TRANSISTOR 30GHZ TRANSISTOR C 608 Germanium Amplifier Circuit diagram Tachyonics

    9829 A

    Abstract: TARF2202 .7E8
    Text: SiGe HBT MMIC Wideband Linear Amplifier TARF2202 SiGe HBT MMIC Wideband Linear Amplifier Descriptions TARF 2202 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


    Original     		PDF TARF2202 50-ohm TAHB09) 30GHz TARF2202 1900MHz 100MHz 9829 A .7E8

    9635

    Abstract: sige hbt TARF2201 wideband linear amplifier Tx SiGe MMIC
    Text: SiGe HBT MMIC Wideband Linear Amplifier TARF2201 SiGe HBT MMIC Wideband Linear Amplifier Descriptions TARF 2201 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


    Original     		PDF TARF2201 50-ohm TAHB09) 30GHz TARF2201 12dBm 900MHz OT343 9635 sige hbt wideband linear amplifier Tx SiGe MMIC

    Untitled

    Abstract: No abstract text available
    Text: CHA2097a 20-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2097a is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The


    Original     		PDF CHA2097a 20-40GHz CHA2097a 20-40GHz 14dBm DSCHA20978021

    p331 TRANSISTOR

    Abstract: transistor 5ghz pnp Bipolar HJ TRANSISTOR PNP 5GHz high gain PNP RF TRANSISTOR GEC Marconi Materials Technology p349 Schematics 5250 NPN transistor which has frequency greater than 2 pnp 8 transistor array
    Text: A New High Performance Complementary Bipolar Technology Featuring 45GHz NPN and 20GHz PNP Devices. M C Wilson, P H Osborne, S Thomas and T Cook Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K. Tel: +44 1793 518000, FAX: +44 1793 518351 E-mail: martin_wilson@mitel.com


    Original     		PDF 45GHz 20GHz 30GHz pp164-167, 20ps/G p331 TRANSISTOR transistor 5ghz pnp Bipolar HJ TRANSISTOR PNP 5GHz high gain PNP RF TRANSISTOR GEC Marconi Materials Technology p349 Schematics 5250 NPN transistor which has frequency greater than 2 pnp 8 transistor array

    CHA2097

    Abstract: No abstract text available
    Text: CHA2097a RoHS COMPLIANT 20-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2097a is a variable gain broadband threestage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip


    Original     		PDF CHA2097a 20-40GHz CHA2097a DSCHA20978021 CHA2097

    FMCW Radar

    Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
    Text: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.


    Original     		PDF 3800-Pirituba E-28760 DK-2750 FMCW Radar radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"

    Untitled

    Abstract: No abstract text available
    Text: united m onolithic semiconductors 'J nuA cn n -i« CHA5091 Q 22-30GHz High Power Amplifier GaAs Monolithic Microwave IC Description Vg Vd The C H A5091a is a high gain broadband twostage m onolithic high pow er am plifier. It is designed fo r a w ide range of applications, from


    OCR Scan     		PDF CHA5091 22-30GHz A5091a 22-30G 27dBm SCHA50919025_

    super bonder 325

    Abstract: ls40f
    Text: EC1840 4 0 G H z LOW N O I SE FET G a A s F I E L D E F F E C T T R A N S I S T O R NOT FOR NEW DESIGNS. USE EC2827 REPLACEMENT. FEATURES • Low noise figure : N F min = 1.5dB typ. at 18GHz N F min. = 3dB (typ.) at 40GHz • High associated gain : G a = 11.5dB (typ.) at 18GHz


    OCR Scan     		PDF EC1840 EC2827 18GHz 40GHz 40GHz. 25nmn EC1840-99A/00 super bonder 325 ls40f

    NEC transistors

    Abstract: No abstract text available
    Text: Silicon and G aA s Monolithic Circuits NEC is a global force in the parasitics, improved passivation, and optoelectronic semiconductor products — computer, communications and home emitter line widths as small as 0.6 microns. many of which are developed at our joint


    OCR Scan     		PDF