Untitled
Abstract: No abstract text available
Text: RF Coaxial Connector SPECIFICATIONS Mini Series Straight Jack For PCB SM T Mechanical Contact Captivation Force: 2.45N min. Durability: 30Cycles min. Electrical Impedance: 50Ω Nominal Frequence Range: 0~6GHz Voltage Rating: 250V max. Dielectrical Withstanding Voltage: 500V min.
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30Cycles
KFM110Z-1002-7F
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Untitled
Abstract: No abstract text available
Text: SPECIFICATIONS Mechanical Connector Unmating Force : 0.75 Kgf max Durability : 30Cycles FPC Connector GB10241-0L01-7F Vertical, SMT, 0.50mm Pitch 24Pos. Electrical Current Rating: 0.3DA Contact Resistance: Dielectric Withstanding Voltage: 90V. Insulation Resistance:
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30Cycles
GB10241-0L01-7F
24Pos.
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HIPRO
Abstract: 109-5206 POWER hipro 12p connector
Text: Product Specification（製品規格 2.5 Signal DBL Lock Connector 2.5 シグナル･ シグナル･ダブル･ ダブル･ロックコネクタ 108-5459 30JUN2009 Rev L 1. Scope : １1. 適用範囲 1.1 Contents 1.1 1.1 内容 This specification covers the requirements for product
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30JUN2009
110mm
HIPRO
109-5206
POWER hipro
12p connector
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LY190-128064
Abstract: SSD1308Z 23/11175
Text: 力元電子（香港）有限公司 OLED 显示屏说明书 型号：LY190-128064 地址：深圳市南山區南光路 126 號鵬都大廈 B 座 1504 電話：0755-26523608 傳真：0755-86368541 郵編：518052 郵箱：jack@liyuan-elec.com 網址：www.liyuan-elec.com
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LY190-128064
LY190-128064
SSD1308Z
23/11175
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TSP50C04
Abstract: BD 4914 MX 0541 TSP5220 TSP50C12 BA 59 04AF P DAC 0804 interfacing DAC with 0830 microprocessor LCD 16PIN mozart
Text: TSP50C0x/1x Family Speech Synthesizer Design Manual 2000 Linear Products SPSS011D IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information
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TSP50C0x/1x
SPSS011D
TSP50C04
BD 4914
MX 0541
TSP5220
TSP50C12
BA 59 04AF P
DAC 0804
interfacing DAC with 0830 microprocessor
LCD 16PIN
mozart
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet Pb Free Specification TWH104-HS Rev. 02 101203 SSC Drawn Approval Customer Approval 신도현 12/03 Rev. 02 December 2010 WWW.SEOULSEMICON.COM 서식번호 : SSC-QP-7-07-25 (Rev.0.0) Technical Data Sheet [ Contents ] 1. Description 2.
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TWH104-HS
SSC-QP-7-07-25
TWH104-HS
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Untitled
Abstract: No abstract text available
Text: 力元電子（香港）有限公司 OLED 显示屏说明书 型号：LY240-096016 地址：深圳市南山區南光路 126 號鵬都大廈 B 座 1504 電話：0755-26523608 傳真：0755-86368541 郵編：518052 郵箱：jack@liyuan-elec.com 網址：www.liyuan-elec.com
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LY240-096016
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IEC-68-2-20
Abstract: IEC-68-2-21 172kPA IEC749 EIAJ ED-4701 B-123 IEC68-2-20 IEC68 IEC68-2-21 IEC747-2 IEC68-2-11
Text: 【 】 Page:0036 ［Ⅰ 半導体技術資料］ ⅹⅲ 品質保証 （１） 品質保証 【１】 品質方針 当社では「正しい作業により目標とする品質を工程で作り込む」を品質保証の基本理念とし、品質保証活動
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IEC749
IEC68-2-20
IEC68-2-14
300sec
10cycle
10sec
25Tstg
300sec
IEC-68-2-20
IEC-68-2-21
172kPA
IEC749
EIAJ ED-4701 B-123
IEC68-2-20
IEC68
IEC68-2-21
IEC747-2
IEC68-2-11
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CT79E
Abstract: No abstract text available
Text: FIRADEC 95 CONDENSATEURS AU TANTALE TANTALUM CAPACITORS CONDENSATEURS TANTALE A ELECTROLYTE GELIFIE WET TANTALUM CAPACITORS FIRADEC 96 CONDENSATEURS AU TANTALE TANTALUM CAPACITORS Condensateurs tantale à électrolyte non solide CARACTERISTIQUES GENERALES
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYTY108A InSb HALL-EFFECT ELEMENT Hall-effect element CYTY108A is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage
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CYTY108A
CYTY108A
10sec
300g/30sec
200pF,
D-85464
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet Pb Free Specification WH107 Rev. 03 101203 SSC Drawn Approval Customer Approval 신도현 12/03 Rev. 03 December 2010 WWW.SEOULSEMICON.COM 서식번호 : SSC-QP-7-07-25 (Rev.0.0) Technical Data Sheet [ Contents ] 1. Description 2. Absolute maximum ratings
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WH107
SSC-QP-7-07-25
WH107
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYTY105A InSb HALL-EFFECT ELEMENT Hall-effect element CYTY105A is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage
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CYTY105A
CYTY105A
10sec
300g/30sec
200pF,
D-85464
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet Pb Free Specification SSC-WH104-LC Preliminary 091118 SSC Drawn Approval Customer Approval SSCSSC-WH104WH104-LC www.acriche.com 서식번호 : SSC-QP-7-07-25 (Rev.0.0) Technical Data Sheet [ Contents ] 1. Description 2. Absolute maximum ratings
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SSC-WH104-LC
WH104www
SSC-QP-7-07-25
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Bolt Torque M32
Abstract: hydraulic shock absorber RBC2015 RBC0805 RB27-X331 RBC1411 shock absorber RBC1007 Energy Me bm10
Text: Shock Absorber Series RB Impact and noise absorption Automatic adjustment to the most appropriate absorption performance Dampening to meet the high speed requirements of the modern world. Specially designed orifice can absorb energy comprehensively and most appropriately in many different
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CYSH12AF
Abstract: ssf hall CYSH12 CYTY101A hall ssd HR100 3060S 1000HR sse hall
Text: Technologies GmbH & Co. KG CYSH12AF InSb HALL-EFFECT ELEMENT Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output. It
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CYSH12AF
CYSH12AF
CYTY101A.
30CYCLE
10sec
300g/30sec
200pF,
D-85464
ssf hall
CYSH12
CYTY101A
hall ssd
HR100
3060S
1000HR
sse hall
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ST79
Abstract: No abstract text available
Text: FIRADEC 95 CONDENSATEURS AU TANTALE TANTALUM CAPACITORS CONDENSATEURS TANTALE A ELECTROLYTE GELIFIE WET TANTALUM CAPACITORS FIRADEC 96 CONDENSATEURS AU TANTALE TANTALUM CAPACITORS Condensateurs tantale à électrolyte non solide CARACTERISTIQUES GENERALES
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2000Hz
196m/s2
CT79E
490m/s2
ST79
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MB86R
Abstract: C001 MB86R01
Text: MB86R01 Application Note DDR2 Controller Self Refresh in STOP Mode April, 2009 The 1.1 edition FUJITSU MICROELECTRONICS PROPRIETARY AND CONFIDENTIAL MB86R01 Application Note DDR2 Controller Self Refresh in STOP Mode • The contents of this document are subject to change without notice.
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MB86R01
166MHz
MB86R
C001
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firca cts-13 capacitors
Abstract: 30801-013 firca capacitors Firadec tableau des boitiers cms ST79 d CTC21E D 22 uF 10 100V T CTC21C CTC21 ESA-PSS-01-603
Text: FIRADEC 1 CONDENSATEURS AU TANTALE TANTALUM CAPACITORS INTRODUCTION GENERALITES INTRODUCTION GENERAL INFORMATION Fabrication Manufacturing Identification - Libellé de commande Type identification - Ordering informations Normes et spécifications Specifications
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100kHz
P113A132
P113A1128
firca cts-13 capacitors
30801-013
firca capacitors
Firadec
tableau des boitiers cms
ST79 d
CTC21E D 22 uF 10 100V T
CTC21C
CTC21
ESA-PSS-01-603
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firca capacitors
Abstract: FIRADEC facon capacitors CT79E st79 circuit bouchon capacitor rse 104 ST79 d CT79 condensateur
Text: 090093 FIRADEC_P81A96:030180 FIRADEC - P81A196 FIRADEC 17/11/09 8:54 Page 15 95 CONDENSATEURS AU TANTALE TANTALUM CAPACITORS CONDENSATEURS TANTALE A ELECTROLYTE GELIFIE WET TANTALUM CAPACITORS 090093 FIRADEC_P81A96:030180 FIRADEC - P81A196 FIRADEC 17/11/09
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P81A96
P81A196
firca capacitors
FIRADEC
facon capacitors
CT79E
st79
circuit bouchon
capacitor rse 104
ST79 d
CT79
condensateur
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet Pb Free Specification SSC-WH104-NZ Rev. 01 100601 Rev. 01 July 2010 WWW.SEOULSEMICON.COM 서식번호 : SSC-QP-7-07-25 (Rev.0.0) Technical Data Sheet [ Contents ] 1. Description 2. Absolute maximum ratings 3. Electro-Optical characteristics
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SSC-WH104-NZ
SSC-QP-7-07-25
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Untitled
Abstract: No abstract text available
Text: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only LED DISPLAY LTS-3361HR DATASHEET Rev Description 01 02 By ORIGINAL KITTISAK B. Refer to contour drawing Revision (- March 12/2010 Put wave soldering profile and reliability test item KITTISAK B. May 18/2010
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LTS-3361HR
DS30-2010-0072
BNS-OD-C131/A4
MIL-STD-750D
30mins
30CYCLES
MIL-STD-883D
MIL-STD-202F
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Untitled
Abstract: No abstract text available
Text: VARISTORS NV73 1E 積層形金属酸化物バリスタ Multilayer Type Metal Oxide Varistors •構造図 Construction ① 外部電極 ② バリスタ素子 ③ 内部電極 外装色：黒 Body color：Black ■特長 Features ④ 内部側面電極 Inner side electrode
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NV73A1E
1000pcs
IEC6100042
IEC6100042)
30min
30min30cycles
8/20s,
1000s
10/1000s,
1000h
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NV73A2BT47
Abstract: NV73A2BTTE39 NV73A2AT39 NV73C2BTTE24 NV73A2BT39 NV73A2ATTE15 NV73A2ATTE47 NV73A1JTTE8.2 NV73A2BTTE56 NV73B2BTTE15
Text: VARISTORS NV73 積層形金属酸化物バリスタ Multilayer Type Metal Oxide Varistors •構造図 Construction ① 外部電極 ② バリスタ素子 ③ 内部電極 外装色：黒 Body color：Black ■特長 Features 双方向対称性を有し正負のサージ吸収が可能です。
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DimenB2BT15
NV73B2BT12
NV73B2BT8
NV73C2B
NV73C2BT27
NV73C2BT24
NV73C2BT22
NV73C2BT20
NV73C2BT18
NV73C2BT15
NV73A2BT47
NV73A2BTTE39
NV73A2AT39
NV73C2BTTE24
NV73A2BT39
NV73A2ATTE15
NV73A2ATTE47
NV73A1JTTE8.2
NV73A2BTTE56
NV73B2BTTE15
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYTY108A InSb HALL-EFFECT ELEMENT Hall-effect element CYTY108A is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage
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CYTY108A
CYTY108A
40DERING
10sec
300g/30sec
200pF,
D-85464
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