Untitled
Abstract: No abstract text available
Text: Ordering number: EN 3 0 9 4 No.3094 J _ 2SA1708/2SC4488 PNP/NPN Epitaxial Planar Silicon Transistors S A iY O J High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed
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2SA1708/2SC4488
2SA1708
4249MO
2SA1708/2
SC4488
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MAAPGM0063-DIE
Abstract: No abstract text available
Text: 8.5-11.0 GHZ, 5W Power Amplifier MAAPGM0063-DIE RO-P-DS-3094 Preliminary Datasheet Features ♦ 5 Watt Saturated Output Power Level ♦ MSAG Process ♦ Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility
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MAAPGM0063-DIE
RO-P-DS-3094
MAAPGM0063-Die
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MAAPGM0063-DIE
Abstract: No abstract text available
Text: 8.5-11.0 GHZ, 5W Power Amplifier MAAPGM0063-DIE RO-P-DS-3094 -Preliminary Datasheet Features ♦ 5 Watt Saturated Output Power Level ♦ MSAG Process ♦ Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility
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MAAPGM0063-DIE
RO-P-DS-3094
MAAPGM0063-Die
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RF AGC Amplifier
Abstract: "RF AGC Amplifier" MRFIC0954 MRFIC1854 TSSOP-20
Text: WIRELESS SYMPOSIUM/PORTABLE BY DESIGN CONFERENCE SPRING 1999 Back Home Print Views Search Results Exit CDMA Upmixer/Exciter Amplifier Provides Higher Integration for Cellular and PCS Handsets Curtis Gong, Applications Engineer rydm80@email.sps.mot.com 602 413-3094, (602) 413-7986 fax
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rydm80
MRFIC0954
MRFIC1854
TSSOP-20EP
MRFIC0954.
MRFIC1854.
RF AGC Amplifier
"RF AGC Amplifier"
TSSOP-20
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A1708
Abstract: c4488 C448f D4488 J4488 transistor 2sc4488 2SA1708 2SC4488 SC4488 2SA170E
Text: Ordering number: EN 3 0 9 4 2SA1708/2SC4488 No.3094 srnmrOi PN P/N PN Epitaxial P lanar Silicon Transistors High-Voltage Switching Applications h F e a tu r e s • Adoption of FBET, MBIT processes • H igh breakdow n voltage, large c u rren t capacity •F a st sw itching speed
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2SA1708/2SC4488
2SA1708
A1708
c4488
C448f
D4488
J4488
transistor 2sc4488
2SC4488
SC4488
2SA170E
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Untitled
Abstract: No abstract text available
Text: i ia t t r is CA3094, CA3094A, 3094 B S E M I C O N D U C T O R 30MHz, High Output Current Operational Transconductance Amplifier OTA November 1996 Features Description • CA3094T, E, M for Operation Up to 24V The CA3094 is a differential input power control switch/ampli
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CA3094,
CA3094A,
30MHz,
CA3094T,
CA3094
100mA.
CA3080
500mA,
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Untitled
Abstract: No abstract text available
Text: i ia t t r is CA3094, CA3094A, 3094 B S E M I C O N D U C T O R 30M Hz, High O utput C urrent O perational Transconductance A m plifier OTA March 1997 Features Description • CA3094T, E, M for Operation Up to 24V The CA3094 is a differential input power control switch/ampli
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CA3094,
CA3094A,
CA3094T,
CA3094
100mA.
CA3080
500mA,
100mV
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npn phototransistor sfh 309
Abstract: Q62702-P859 Q62702-P941 Q62702-P998 Q62702-P999 Q62702-P178 Q62702-P180 SFH 309 FA SFH 309-3/4
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 309 SFH 309 FA SFH 309 SFH 309 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1180 nm SFH 309 und bei 880 nm (SFH 309 FA) • Hohe Linearität • 3 mm-Plastikbauform im LED-Gehäuse
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GEO06653
npn phototransistor sfh 309
Q62702-P859
Q62702-P941
Q62702-P998
Q62702-P999
Q62702-P178
Q62702-P180
SFH 309 FA
SFH 309-3/4
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npn phototransistor sfh 309
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 309 SFH 309 FA SFH 309 SFH 309 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1180 nm SFH 309 und bei 880 nm (SFH 309 FA) • Hohe Linearität • 3 mm-Plastikbauform im LED-Gehäuse
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Q62702-P859
Q62702-P3592
Q62702-P998
Q62702-P3593
Q62702-P999
Q62702-P3594
GEOY6653
npn phototransistor sfh 309
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Q62702P0180
Abstract: osram sfh 309 SFH 309 FA V Q62702P0941 OHF01121 foto transistor npn phototransistor sfh 309 transistor 309 GEOY6653 Q62702P3593
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 309 SFH 309 FA SFH 309 SFH 309 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1180 nm (SFH 309) und bei 880 nm (SFH 309 FA)
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diode BY 309
Abstract: SFH 309-3/4
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 309 SFH 309 FA SFH 309 SFH 309 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1180 nm (SFH 309) und bei 880 nm (SFH 309 FA)
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Bpy 43
Abstract: BP 103-3 SFH 225 FA BPX 43-3/4 SFH 309-3/4
Text: SI-FOTODETEKTOREN SILICON PHOTODETECTORS 4. Fototransistoren 4. Phototransistors TA = 25 °C Package TA = 25 °C Type ϕ Radiant sensitive area deg. mm2 IPCE λ = 950 nm, Ee = 0.5 mW/cm2, VCE = 5 V VCEO λ10% mA V nm tr,tf (IC = 1 mA, VCC = 5 V, RL = 1 kΩ)
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Q62702-P3595
Q62702-P3593
Q62702-P999
Q62702-P3594
Q6270
Q62702-P1677
Q62702-1129
Q62702-P216
Q62702-P956
Q62702-P1671
Bpy 43
BP 103-3
SFH 225 FA
BPX 43-3/4
SFH 309-3/4
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opto P180
Abstract: P180 opto npn phototransistor sfh 309 foto transistor Q62702-P999 transistor 309 Q62702-P178 Q62702-P180 Q62702-P859 Q62702-P941
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 309 SFH 309 FA SFH 309 SFH 309 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1180 nm SFH 309 und bei 880 nm (SFH 309 FA) • Hohe Linearität
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sfh siemens
Abstract: npn phototransistor sfh 309 380nm SFH 309
Text: SIEMENS NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 309 SFH 309 F Area not flat 4,5t-” Collector Transistor Cathode (Diode) 'Chip position
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PCE25°
sfh siemens
npn phototransistor sfh 309
380nm
SFH 309
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SFH 309 FA
Abstract: SFH 309-3/4
Text: 2014-01-14 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.1 SFH 309, SFH 309 FA SFH 309 SFH 309 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 380 nm . 1180 nm SFH 309 , 880 nm.1120 nm (SFH 309 FA) • • • •
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D-93055
SFH 309 FA
SFH 309-3/4
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sfh 309 IC
Abstract: No abstract text available
Text: 2007-04-02 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.0 SFH 309, SFH 309 FA SFH 309 SFH 309 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 380 nm . 1180 nm SFH 309 , 880 nm.1120 nm (SFH 309 FA) • • • •
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D-93055
sfh 309 IC
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photo transistor til 78
Abstract: ECG3040 ECG3045 ecg 3041 ECG3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098
Text: Optoisolators DC Current Transfer Ratio Isolation Voltage Viso Surge V Total Power Pt (mW) 7500 7500 250 250 20 100 ECG3045 NPN Darlington NPN Darlington 7500 3550 7500 7500 250 260 300 300 ECG3081 NPN Transistor 6000 ECG3082 NPN Darlington 6000 ECG3083
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ECG3040
ECG3041
ECG3042
ECG3043
ECG3044
ECG3045
photo transistor til 78
ecg 3041
ECG3047
3094 transistor
ECG3090
ECG3086
ECG3098
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PDF
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Untitled
Abstract: No abstract text available
Text: OPTOISOLATORS SCHMITT TRIGGER OUTPUTS * Total Device Ratings NTE Type No. 3090 Output Configuration Schmitt Trigger Diag. No. 152h Maximum LED Ratings Output Ratings isolation Voltage Surge Volts Total Power (mW) Forward Current (mA) Forward Voltage (Volts)
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NTE3090
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PDF
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3094 transistor
Abstract: NTE 3087
Text: OPTOISOLATORS SCHMITT TRIGGER OUTPUTS Total Device Ratings NTE Type No. 3090 Output Configuration Schmitt Trigger Diag No. 152h Maximum LED Ratings Output Ratings Isolation Voltage Surge Volts Total Power (mW) Forward Current (mA) Forward Voltage (Volts)
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NTE3090
3094 transistor
NTE 3087
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PDF
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3094 transistor
Abstract: transistor 3095
Text: SCHMITT TRIGGER OUTPUTS Total Device Ratings NTE Type No. 3090 Output Configuration Diag. No. Schm itt Trigger 152h Maximum LED Ratings Output Ratings Isolation Voltage Surge Volts Total Power (mW) Forward Current (mA) Forward Voltage (Volts) Reverse Voltage
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NTE3090
3094 transistor
transistor 3095
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PDF
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CA3094T
Abstract: CA3094 CA3094E CA3094Bt CA3094AT
Text: CA3094, CA3094A, CA3094B fil h a r r i s u li se mi.c o h 60 c t o r 30MHz, High Output Current Operational Transconductance Amplifier OTA November 1996 Features Description • CA3094T, E, M for Operation Up to 24V The CA3094 is a differential input power control switch/ampli
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CA3094,
CA3094A,
CA3094B
30MHz,
CA3094
100mA.
CA3080
CA3094E,
CA3094T
CA3094E
CA3094Bt
CA3094AT
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PDF
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newvicon
Abstract: Plumbicon Philips Components, quartz crystal PHILIPS WIDEBAND HYBRID IC MODULES PC05 Linear Applications Handbook National Semiconductor THE IC06 74 Philips Components, Piezoelectric Ceramics ics 6312
Text: Philips Semiconductors Data handbook system DATA HANDBOOK SYSTEM Philips Semiconductors data handbooks contain all pertinent data available at the time of publication and each is revised and reissued regularly. Loose data sheets are sent to subscribers to keep them
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HE4000B
newvicon
Plumbicon
Philips Components, quartz crystal
PHILIPS WIDEBAND HYBRID IC MODULES
PC05
Linear Applications Handbook National Semiconductor
THE IC06 74
Philips Components, Piezoelectric Ceramics
ics 6312
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PDF
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OPCA-02
Abstract: ABB ACS350 ACS350 FMBA-01 9pin D-connector modbus ACS350 drives ACS350-03X-01A9-4 ACS350-01X-09A8-2 J400 acs-cp-a
Text: ABB general machinery drives ACS350, 0.37 to 7.5 kW / 0.5 to 10 hp Technical catalogue PROFILE INDUSTRIES PRODUCTS APPLICATIONS EXPERTISE PARTNERS SERVICES ACS350_EN_revC.indd 1 30.6.2006 9:40:15 Two ways to select your drive Choice 1: Simply contact your local ABB drives
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ACS350,
ACS350
ACS350
3AFE68596106
HANSAPRINT/SAL06
OPCA-02
ABB ACS350
FMBA-01
9pin D-connector modbus
ACS350 drives
ACS350-03X-01A9-4
ACS350-01X-09A8-2
J400
acs-cp-a
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PDF
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plumbicon
Abstract: display dc05 display Vidicon 4806 PHILIPS WIDEBAND HYBRID IC MODULES IC12 Peripherals data handbook Philips Varistors
Text: Philips Semiconductors Data Communications Products Data handbook system Appendix A DATA HANDBOOK SYSTEM Discrete S em iconductors Philips Semiconductors data handbooks contain all pertinent data available at the time of publication and each is revised and reissued regularly.
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