1N5 diode
Abstract: 1N57xx 1N5712 1N5719 1N5767 RS-296-D 5082-XXXX
Text: Products > RF ICs/Discretes > PIN Diodes > Axial Glass Packaged > 5082-3080 5082-3080 axial lead glass packaged PIN diodes Description Lifecycle status: Active Features The 5082-3xxx series of current controlled PIN diodes are specified for use in control
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5082-3xxx
1N5719,
1N5767,
5082-xxxx
5082xxxx
1N5712
T25/1N57xx
1N57xx
1N5 diode
1N5712
1N5719
1N5767
RS-296-D
5082-XXXX
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diode 5082-3080
Abstract: 5082-3080 3080 diode
Text: 5082-3080 SILICON PIN DIODE PACKAGE STYLE 15 DESCRIPTION: The ASI 5082-3080 PIN Diode is Designed for Low Power RF Switching and Attenuating Applications. MAXIMUM RATINGS I 250 mA V 100 V PDISS 250 mW @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °C
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Untitled
Abstract: No abstract text available
Text: 5082-3080 SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-3080 PIN Diode is Designed for Low Power RF Switching and Attenuating Applications. MAXIMUM RATINGS I 250 mA V 100 V PDISS 250 mW @ TC = 25 OC CHARACTERISTICS SYMBOL TC = 25 OC TEST CONDITIONS
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in5719
Abstract: DIODE T25 5082-XXXX 5082-3001 1N5719 diode 5082-3077 diode 5082- 3039 5082-3080 1N57xx 1Nxx
Text: Agilent 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Features • Low Harmonic Distortion • Large Dynamic Range Description/Applications These general purpose switching
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1N5719,
1N5767,
5082-3xxx/
1N57xx
5968-7182E
5989-3339EN
in5719
DIODE T25
5082-XXXX
5082-3001
1N5719
diode 5082-3077
diode 5082- 3039
5082-3080
1N57xx
1Nxx
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IN5767
Abstract: 1N5767
Text: PIN Diodes Reliability Data 1N5767 5082-3080 5082-3188 Description Applications For applications requiring component reliability estimation, Hewlett-Packard provides reliability data for all families of devices. Data is initially compiled from reliability tests run prior to
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1N5767
MIL-S-19500
DOD-HDBK-1686
IN5767
IN5767
1N5767
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diode 5082-3077
Abstract: IN5719 1N5767 5082-3039 diode 5082-3080 1N5 diode 1N5719 F 5082 1N5712 RS-296-D
Text: PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications
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1N5719,
1N5767,
IN5719
5082-xxxx
5082-xxxx
1N5712
5967-5812E
5968-7182E
diode 5082-3077
IN5719
1N5767
5082-3039
diode 5082-3080
1N5 diode
1N5719
F 5082
1N5712
RS-296-D
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1N5767
Abstract: DIODE T25 in5719 1nxxxx diode 1N5712 1N5719 RS-296-D digital phase shifters 1N5 diode 5082-XXXX
Text: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers,
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1N5719,
1N5767,
1N5712
5082-3xxx
T25/1N57xx
1N57xx
5082-3xxx/
1N57xx
5989-3339EN
1N5767
DIODE T25
in5719
1nxxxx diode
1N5712
1N5719
RS-296-D
digital phase shifters
1N5 diode
5082-XXXX
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disadvantages of resistor
Abstract: an 3080 variable resistor 50k DS1859 Laser power supply abstract MAX3740A MAX4245 Schematic of 1K digital potentiometer MD 243 diode
Text: Maxim > App Notes > Communications Circuits Digital Potentiometers Optoelectronics Keywords: laser, laser power, laser power control, laser control circuit, laser power circuit, power control for laser Aug 24, 2004 APPLICATION NOTE 3080 Accurate Power Control of the MAX3740A Laser Driver
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MAX3740A
DS1859
com/an3080
DS1859:
MAX3740A:
AN3080,
APP3080,
Appnote3080,
disadvantages of resistor
an 3080
variable resistor 50k
Laser power supply abstract
MAX4245
Schematic of 1K digital potentiometer
MD 243 diode
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1N5767
Abstract: IN5719 1nxxxx diode 5082-XXXX
Text: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications Features These general purpose switching diodes are intended for low power switching applications such as RF
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1N5719,
1N5767,
1N5712
5082-3xxx
T25/1N57xx
1N57xx
5082-3xxx/
1N57xx
5968-7182EN
1N5767
IN5719
1nxxxx diode
5082-XXXX
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5082-3080
Abstract: 1N5767 1N5957SERIES diode 5082-3080 1N5957
Text: 1N5767 5082-3080 SERIES 1N5957SERIES KEY FEATURES DESCRIPTION Both switch and attenuator applications. The 1N5957 is primarily used as an attenuator PIN diode and is particularly suitable wherever current controlled, wide dynamic range resistance elements are required. The 1N5957 has also been
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1N5767
1N5957SERIES
1N5957
1N5767
5082-3080
1N5957SERIES
diode 5082-3080
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1N5767
Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.SA PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features
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1N5719,
1N5767,
IN5767
1N5767
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5082-3077
Abstract: 1N5767 2101 5082-3081 glass 1N5719 HPND-0001 HPND-0002 5082-3039 5082-3188
Text: RF Non-Surface Mount PIN Diodes Glass Axial Lead, Beam Lead, Chip, Stripline Part Number CT Max. pF 5082-3001 5082-3039 1N5719 5082-3077 5082-3188 5082-3080 1N5767 5082-3379 5082-3081 HPND-0001 HPND-0002 0.25 0.25 0.3 0.3 1 0.4 0.4 0.4 0.4 0.2 0.2 RS Max.
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1N5719
1N5767
HPND-0001
HPND-0002
5082-3077
1N5767
2101
5082-3081
glass
1N5719
HPND-0001
HPND-0002
5082-3039
5082-3188
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Untitled
Abstract: No abstract text available
Text: 5082-3080 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 100 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.2.5 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.4pò Carrier Lifetime (S)1.3u @I(F) (test) (A)50m @I(R) (A) (Test Condition)250m
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5SDD31H6000
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 6000 3080 4840 40x103 1.016 0.175 Rectifier Diode V A A A V mΩ 5SDD 31H6000 PRELIMINARY Doc. No. 5SYA1183-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1
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31H6000
5SYA1183-00
CH-5600
5SDD31H6000
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CA 3080 E
Abstract: TXV-3080 3080 diode TXB-3080
Text: HEWLETT-PACKARD^ C M PN TS EGE D 444 7 5Ô 4 0 0 0 S 7 7 3 fl H IG H R E L IA B IL IT Y fT L J Ì H E W L E T T ti!K J P A C K A R D P IN A T T E N U A T O R D IO D E S Generic 5082-3080 TX-3080 TXB-3080 TXV-3080 TXVB-3080 T '0 * 7 -l£ ?. .
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MIL-S-19500
TX-3080
TXB-3080
TXV-3080
TXVB-3080
80VPk.
CA 3080 E
3080 diode
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NJS6928
Abstract: NJS6930
Text: V'ÎÎ7n;J$SH'7|Microwave Diode Limiters Type NJS6130 NJS6312A NJS6301 NJS6303A NJS6503A *5 A #* 7 - y u -'> 3 > It« * [ Frequency (MHz Insertion Loss (dB m ax.) Isolation (dB min.) Handling Power Max. Rating (W m ax.) 1200-1400 3000-3100 3020-3080 3020-3080
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NJS6130
NJS6312A
NJS6301
NJS6303A
NJS6503A
NJR6216
NJS6317
NJS6928
NJS6930
NJS6933
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1N SERIES DIODE
Abstract: 1N5767 diode 5082-3080 1N5957 2000Q 1N5957SERIES unitrode diode iN5957
Text: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 SERIES Features • • • • Useful attenuation from 1 i*Ato 100 mA bias. Capacitance below 0.4 pF. Low distortion in sw itches and attenuators. Rugged Unitrode construction. Description The 1N5767 and 1N5957 PIN diodes are
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1N5767
1N5957
1N5767
1N5957
1N SERIES DIODE
diode 5082-3080
2000Q
1N5957SERIES
unitrode diode
iN5957
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Untitled
Abstract: No abstract text available
Text: Whp\ HEWLETT mL'liâ PACKARD PIN Diodes Reliability Data 1N5767 5082-3080 5082-3168 5082-3188 D escription Applications For applications requiring component reliability estima tion, Hewlett-Packard provides reliability data for all families of devices. Data is initially com
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1N5767
MIL-S19500
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IN5767
Abstract: HP 5082-3081 HPND-4165 EN 4165 5082-3042 1N5719 1N5767 HPND-4166 IN5719 RS-296-D
Text: PIN DIODES FOR RF SWITCHING AND ATTENUATING 1N5719 IN5767 5082-3001/02 5082-3039 5082-3042/43 5082-3077 5082-3080 5082-3081 5082-3168/88 5082-3379 HPNO-4165/66 Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE LOW CAPACITANCE LOW TEMPERATURE COEFFICIENT
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1N5719
1N5767
HPND-4165/66
HPND-4166.
IN5767
HP 5082-3081
HPND-4165
EN 4165
5082-3042
HPND-4166
IN5719
RS-296-D
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Untitled
Abstract: No abstract text available
Text: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 SERIES Features • • • • Useful attenuation from 1 mA to 100 mA bias. Capacitance below 0.4 pF. Low distortion in switches and attenuators. Rugged Microsemi construction. Description The 1N5767 and 1N5957 PIN diodes are
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1N5767
1N5957
1N5767
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diode 5082-3080
Abstract: 1N5767 5082-3080 1N5957
Text: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 S E R IE S Features • • • • Useful attenuation from 1 i*A to 100 m A bias. Capacitance below 0.4 pF. Low distortion in switches and attenuators. Rugged Microsemi construction. Description The 1N5767 and 1N5957 PIN diodes are
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1N5767
1N5957
1N5767
1N5957
diode 5082-3080
5082-3080
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HP 5082-3081
Abstract: diode 5082-3168 HPND-4165 HP 5082-3168 vhf antenna mtbf hp 3042 1N5767 5082-3168 diode 5082-3001 5082-3042
Text: H E W L E T T P A CK A RD COMPONENTS 5082 3001/02 HPND-4165/66 5082-3039 1N5719 5082-3042/43 5082-3077 5082-3080 (1N5767) 5082-3081 5082-3168/88 PIN DIODES FOR RF SWITCHING AND ATTENUATING Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE
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HPND-4165/66Â
1N5719)
1N5767)
curr080,
IN5719
HP 5082-3081
diode 5082-3168
HPND-4165
HP 5082-3168
vhf antenna mtbf
hp 3042
1N5767
5082-3168
diode 5082-3001
5082-3042
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TFK diode
Abstract: diode tfk TRANSISTOR BC 277 diode s .* tfk tfk 045 TFK 220 transistor bf 244 76 TFK 244 tfk diode 12A3
Text: 17E D I ÖSSODSb DOOMS'} 3 m k l G G ^ ¡r milFWKSM electronic TFK 3080 D TELEFUNKEN ELECTRONIC C » « tiv « lK h f 0l09* tt [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T -3 3 ~ 3 r- Applications: • Motor-control 380 V-mains)
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S1000
2/1997-0888E
T0126
15A3DIN
TFK diode
diode tfk
TRANSISTOR BC 277
diode s .* tfk
tfk 045
TFK 220
transistor bf 244
76 TFK
244 tfk
diode 12A3
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diode tfk s 220
Abstract: tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321
Text: 17E I I B^SDDRb ODD^bS^ 3 • m ilF iy iim iM electronic Crt*tiv«1«chnolo$tt ALGG i l ? ■ TFK 3080 D TELEFUNKEN ELECTRONIC [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T-33-3£~ Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)
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S1000
O888E
T0126
15A3DIN
diode tfk s 220
tfk s 220
diode 12A3
rg4 77 diode
tfk s 92
TFK diode
tfk 3b
tfk transistor
Tfk 237
TCA 321
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