2SA1870
Abstract: A325
Text: Transistors 2SA1870 96-113-A325 308
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2SA1870
96-113-A325)
2SA1870
A325
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BC307
Abstract: BC238 datasheet BC239 BC309 308 transistor
Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage
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BC307/308/309
BC309
BC307
BC308/309
BC307
BC238 datasheet
BC239
BC309
308 transistor
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BC307
Abstract: BC308 BC308 PNP transistor BC309 309 IC
Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage
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BC307/308/309
BC309
BC307
BC308/309
BC307
BC308
BC308 PNP transistor
BC309
309 IC
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transistor BC 458
Abstract: Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 BC308
Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage
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BC307/308/309
BC309
BC307
BC308/309
BC308
BC308ABU
transistor BC 458
Transistor BC 308C
BC 2001 transistor
BC307
BC307BTA
BC237
bc309
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BC307
Abstract: BC238 datasheet BC239 BC309 transistor bc237
Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage
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BC307/308/309
BC309
BC307
BC308/309
BC307
BC238 datasheet
BC239
BC309
transistor bc237
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bc307bta
Abstract: BC307
Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage
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BC307/308/309
BC309
BC307
BC308/309
BC307
bc307bta
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BC308A
Abstract: Transistor BC 308C BC307 Bc308
Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage
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BC307/308/309
BC309
BC307
BC308/309
BC308
BC308A
Transistor BC 308C
BC307
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Untitled
Abstract: No abstract text available
Text: Product Description SSW-308 Stanford Microdevices’ SSW-308 is a high perfomance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. DC-3 GHz Low Cost GaAs MMIC SPDT Switch This single-pole, double-throw, reflective switch consumes
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SSW-308
SSW-308
28dBm.
-45Cto
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47DBM
Abstract: SSW-308 P 721 g f
Text: Product Description SSW-308 Stanford Microdevices’ SSW-308 is a high perfomance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. DC-3 GHz Low Cost GaAs MMIC SPDT Switch This single-pole, double-throw, reflective switch consumes
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SSW-308
SSW-308
28dBm.
-45Cto
500MHz
47DBM
P 721 g f
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C67078-S3109-A2
Abstract: 80J-10
Text: BUZ 308 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 308 800 V 2.6 A 4Ω TO-218 AA C67078-S3109-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218
C67078-S3109-A2
Ope9/96
C67078-S3109-A2
80J-10
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BUZ 308
Abstract: C67078-S3109-A2
Text: BUZ 308 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 308 800 V 2.6 A 4Ω TO-218 AA C67078-S3109-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218
C67078-S3109-A2
BUZ 308
C67078-S3109-A2
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QPP-308
Abstract: No abstract text available
Text: QPP-308 60W, 2110-2170MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-308 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver and output stages of linear RF power amplifiers for cellular base stations. The power transistors are
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QPP-308
2110-2170MHz
QPP-308
H11860)
H11861)
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MG82FE
Abstract: No abstract text available
Text: 笙泉科技股份有限公司 Megawin Technology Co., Ltd. MG82FE L 308/316 Data Sheet Ver 0.06 This document information is the intellectual property of Megawin Technology. Megawin Technology Co., Ltd. 2009 All rights reserved. QP-7300-03D 1/84 MG82FE(L)308/316
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MG82FE
QP-7300-03D
2009/Nov
2010/Mar
LQFP-48
2010/Jul
2010/Sep
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MG82FE
Abstract: MG82E boot code ap megawin MG82 80C51 80C52 LQFP-64 KEILC51 T0X12 QP-7300-03D
Text: 笙泉科技股份有限公司 Megawin Technology Co., Ltd. MG82FE L 308/316 Data Sheet Ver 0.04 This document information is the intellectual property of Megawin Technology. Megawin Technology Co., Ltd. 2009 All rights reserved. QP-7300-03D 1/84 MG82FE(L)308/316
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MG82FE
QP-7300-03D
LQFP-48
2009/Nov
2010/Mar
MG82E
boot code ap megawin
MG82
80C51
80C52
LQFP-64
KEILC51
T0X12
QP-7300-03D
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Untitled
Abstract: No abstract text available
Text: Stanford Microdevices SSW-308 Product Description Stanford M icrodevices’ SSW -308 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-3 GHz Low Cost GaAs MMIC SPDT Switch
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28dBm.
500MHz
-45Cto
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transistor bc 238 b
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS • LO W N OISE: BC309 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307
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BC307/308/309
BC309
BC307
transistor bc 238 b
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fr 309
Abstract: BC307 309 T BC239 BC309
Text: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • LO W NOISE: BC309 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307
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BC307/308/309
BC309
BC307
BC308/309
BC308/309
fr 309
BC307
309 T
BC239
BC309
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Untitled
Abstract: No abstract text available
Text: 3 Stanford Microdevices Product Description SSW-308 Stanford M icrodevices’ SSW -308 is a high perfom ance Gallium Arsenide Field Effect Transistor M MIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-3 GHz Low Cost G a As MMIC SPDT Switch
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SSW-308
28dBm.
-45Cto
500MHz
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 308 SIPMOS Power Transistor f • N channel • Enhancement mode • Avalanche-rated Type BUZ 308 ^DS 800 V ^DS on 4 Í2 2.6 A Package Ordering Code TO-218 AA C67078-S3109-A2 Maximum Ratings Parameter Symbol Continuous drain current Values
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O-218
C67078-S3109-A2
fl23SbÃ
O-218AA
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Transistoren DDR
Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60
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SCE237
SCE238
SCE239
SCE308
Transistoren DDR
vergleichsliste
TELEFUNKEN bux 127
aktive elektronische bauelemente ddr
BUX 127
SF 127
vergleichsliste DDR
"vergleichsliste"
bauelemente DDR
sf 369
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Untitled
Abstract: No abstract text available
Text: Product Description SSW-308 Stanford M icrodevices’ SSW -308 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-3 GHz Low Cost GaAs MMIC SPDT Switch This single-pole, double-throw, reflective switch consum es
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OCR Scan
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28dBm.
500MHz
-45Cto
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 308 SIPMOS Power Transistor • N channel • Enhancement mode 12 • Avalanche-rated V»;05'J6 i Pin 1 Pin 2 G Type BUZ 308 Vbs 800 V 2.6 A ^DS on 4 fl Pin 3 s D Package Ordering Code TO-218AA C67078-S3109-A2 Maximum Ratings Parameter Symbol
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O-218AA
C67078-S3109-A2
O-218
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 307 BUZ 308 SIPMOS Power Transistors • • N channel Enhancement mode Type ^DS R dS on Package 1> O rdering Code BUZ 307 800 V 3.0 A 3.0 n TO-218 AA C67078-A3100-A2 BUZ 308 800 V 2.6 A 4.0 LI TO-218 AA C67078-A3109-A2 Maxim um Ratings Param eter
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O-218
C67078-A3100-A2
C67078-A3109-A2
307/BUZ
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transistor BC 308
Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Text: * BC 307 BC 308 BC 309 MPN SILICON TRANSISTOR, EP ITAXIAL PLANAR r RANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L % Preferred device D isp o sitif recommandé 3C 309 and BC 308 transistors are intended or use in audio frequency preamplifier and iriver stages. BC 309 is intended for low
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BC307
CB-76
307ast
308ast
transistor BC 308
transistor sc 308
transistor BC 307
bc 106 transistor
transistor 307
bc 309 b transistor
transistor BC 55
transistor da 307
SC 309
transistor CB 308
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