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    Untitled

    Abstract: No abstract text available
    Text: E G R & ID G/CANADA/OPTOELEK C / Optics 1 D • 303Gblü □□OOG'ÌS ^50 M C A N A ^ InGaAs Photodiodes C30620 Series DATA SHEET Long Wavelength Photodiode For Detection of 1000 to 1700 NM Radiation Pream plifier Front End With or Without Integral Fiber Optic Pigtails


    OCR Scan     		PDF 303Gblà C30620 14-pin C30620QC-YY-XXX C30620-XXX

    YAG-444-4

    Abstract: YAG-444 SGD-444-4 TO36 package SGD-444-2 SGD-444
    Text: E G & G/CANADA/OPTOELEK SGD/YAG Series: M7E D 303Gbl0 00D03E4 2 ICANA Multi-Element T-HI-53 Features • • • • • • Cross Talk > 1 % Between Elements Oxide Passivated W ide Spectral Range Planar Diffused Structure W ide Spectral Range Linearity Over W ide Dynamic Range


    OCR Scan     		PDF 303Gbl0 00D03E4 SGD-444-2 SGD-444-4 YAG-444-4 YAG-444-4 MIL-STD-750B MIL-STD-202D YAG-444 TO36 package SGD-444

    Untitled

    Abstract: No abstract text available
    Text: E G & 6/ CANADA/O PTOE LEK n n lOE D • 3Q30bl0 D0DQQ31 R ■ CANA i l Solid state 7"" V/"i>7 Solid State Emitters Elec,ro ° P “CS Developmental Type C86046E 820 nm CW-Operated GaAIAs Injection Laser With Integral Optical Feedback Photodiode ■ Typical Threshold Current - 100 mA


    OCR Scan     		PDF 3Q30bl0 D0DQQ31 C86046E L-1093

    Untitled

    Abstract: No abstract text available
    Text: E G & G/CANADA/OPTOELEK ID D 3030bl0 OOOG1SS I t c / l Optics «CANA t - w Photodiode C30957E DATA SHEET n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm


    OCR Scan     		PDF 3030bl0 C30957E C30957E t455-6191 ED-0032/10/88

    ELLS 110

    Abstract: avalanche photodiode bias avalanche photodiode preamplifier voltage C30919E
    Text: E G & G/CANADA/OPTOELEK 1 3D30blD DDDDIB^ 711 « C A N A WM MWk ÆWElectro I i l i # Ph o to d io d e Hhil C30919E DATA SH EET • Optics Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module


    OCR Scan     		PDF 3D30bl0 00D0141 C30919E 0-27SI ELLS 110 avalanche photodiode bias avalanche photodiode preamplifier voltage C30919E

    tic 1060

    Abstract: rca 923 C30895 5252 F led rca 514 5252 F 5252 S RCA 411
    Text: E G & G/CANADA/OPTOELEK BDBDbl D O O O O i n ID <123 H C A N A T-W-Si Photodiode R G i l Optics C30895 D A TA S H E ET Silicon Avalanche Photodiode Optim ized fo r High Responsivity and V e ry Lo w Noise at 1060 Nanom eters • Noise Equivalent Power NEP a t 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.


    OCR Scan     		PDF C30895 Range--46Â C30895 ED-0028/10/88 tic 1060 rca 923 5252 F led rca 514 5252 F 5252 S RCA 411

    RCA 467

    Abstract: rca 807 RCA SOLID STATE C30116 infrared emitting diode led 1060-nm mW
    Text: E G & G/CANADA/OPTOELEK ID D • J3030bl0 G000D13 SSM ■ CANA V S f l l ÆM Electro Optics ■ and Devices Solid State Emitters Developmental Type C30116, C30116/F 1060 nm Indium Gallium Arsenide Infrared Surface Emitters for Pulsed or Continuous D C Operation


    OCR Scan     		PDF J3030bl0 GD0DG13 C30116, C30116/F l-737 C301K/F C30116 C30116/F RCA 467 rca 807 RCA SOLID STATE infrared emitting diode led 1060-nm mW

    C30985E Photodiode Array linear

    Abstract: C30985E 32 Elements linear Avalanche Photodiode Array rca 711 C30985 Photodiode Array 32 element 30-element L1117 l1117 g linear array photodiode element
    Text: E G & G/CANADA/OPTOELEK I t C i l IO D • B030bl0 OOODIST SGT * C A N A Photodiode C30985E DATA SHEET Optics 25-Element Silicon Avalanche Photodiode Linear Array for Detection of 900 to 1060 nm Radiation High Quantum Efficiency — 85% typical at 900 nm 18% typical at 1060 nm


    OCR Scan     		PDF B030bl0 C30985E 25-Element L-1117 C30985E 34-pin ED-0006/09/87 C30985E Photodiode Array linear 32 Elements linear Avalanche Photodiode Array rca 711 C30985 Photodiode Array 32 element 30-element L1117 l1117 g linear array photodiode element

    gaseous lasers

    Abstract: C86083E C86093E 910nm laser rca rca 019 1200cu general electric laser 910nm
    Text: E G 8. G/CANADA/OPTOELEK Electro Optics 5TE ì> m 3030blD 0D0D2b0 2 • CANA T 1 ¥ /~ O S ^ C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET Coaxial Stud Package m 1r 1 The C86093E is a high power single element pulsed laser diode operating in the 900to 920 nm wavelength band. Using


    OCR Scan     		PDF 3030blD C86093E 200ns 910nm C86093E 900to gaseous lasers C86083E 910nm laser rca rca 019 1200cu general electric laser 910nm