C30971
Abstract: RCA H 515 PREAMPLIFIER TRANSIMPEDANCE optic fet 090Q C30997-010 C30997-250 C30997-XXXQC-YY
Text: E G v t & G/CANADA/OPTOELEK c / r 303DblD DODGlb? bôb H C A N A ID Silicon Photodiodes C30997 Series DATA SHEET Optics Tran sim p ed a n c e P re a m p lifie r M o d u le s W ith or W ith o u t Integral Fib e r O p tic P ig ta ils for D ete ction of 40 0 to 10 0 0 nm R a d ia tio n
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C30997
C30997-XXX
C30997-XXXQC-YY
14-pin
C30971)
ED-0015/02/88
C30971
RCA H 515
PREAMPLIFIER TRANSIMPEDANCE optic fet
090Q
C30997-010
C30997-250
C30997-XXXQC-YY
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LS7094
Abstract: 2l688
Text: E G & G/CANADA/OPTOELEK ItCJl 303DblD □□□□□27 7 « C A N A IDE D Electro Optics and Devices Solid State Emitters Developmental Types C86039E, C86040E Series Gallium Aluminum Arsenide Injection Lasers for Pulsed Operation at Room Temperature Wavelength of Peak Radiant Intensity
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303DblD
C86039E,
C86040E
C86039EW1:
C86039EW2:
C86039EW3:
C86039EW4:
C86040EW1:
C86040EW2:
C86040EW3:
LS7094
2l688
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C30122
Abstract: rca 036 LS117 o canada general electric
Text: E G & Ê/CANADA/OPTOELEK 2e! D 303DblD tecîn c Optii 00D025G Eb3 ICANA 7141-1! Infrared-Emitting Diode C30122 D A TA S H E E T C30122 - Surface Emitting LED in two lead TO-18 package • W avelength o f Peak Radiant Intensity 904 nanom eters ■ T otal Radiant Flux at IF= 1 0 0 m A
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303DblD
00D025G
C30122
C30122
rca 036
LS117
o canada
general electric
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK 47E 3030blG D GGQ0332 I CANA 1 F Series FND-100;FNP-100Q;FOD-100 T4/-53 Features • • • High Responsivity Ultra-Fast Rise and Fall Time Isolated Photodiode Chip Large Active Area Wide Spectral Range Low NEP Operating Data and Specifications at 23°C: Typical Performance at 90 V Bias
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3030blG
GGQ0332
FND-100
FNP-100Q
FOD-100)
T4/-53
FND-100Q)
303DblD
FND-100,
FND-100Q
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C30817
Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916
Text: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —
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3030bl0
C30954E,
C30955E,
C30956E
C30954E
C30955E
Range--40Â
C30817
s915
C30872
C30955E
tic 1060
C30956E
s914
C30916E
92LS-S916
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090Q
Abstract: PREAMPLIFIER TRANSIMPEDANCE optic fet C30902 rca 514 QC-04 30080 46 spectran C30998-010 C30998-250 303Db
Text: E G 8. G / C A N A D A / O P T O E L E K R C /1 303db l0 ID DD00171 DD7 I CANA Silicon Avalanche Photodiodes C30998 Series Optics DATA SHEET '-HI-6 1 For Detection of 400 to 1000 nm Radiation Transimpedance Preamplifier Modules With or Without Integral Fiber Optic Pigtails
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303dbl0
C30998
--H/-67
C30998-XXXQC-YY
L-1075
C30998-XXX
14-pin
C30902)
ED-0016/02/88
090Q
PREAMPLIFIER TRANSIMPEDANCE optic fet
C30902
rca 514
QC-04
30080 46
spectran
C30998-010
C30998-250
303Db
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