303 SOT-23 TRANSISTOR Search Results

303 SOT-23 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
SSM3K361R	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101
SSM3K341R	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101
7UL2T125FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
7UL2T126FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC

303 SOT-23 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BC846 Abstract: BC846ALT1 BC846ALT3 BC846BLT1 BC846BLT3 BC847 BC847ALT1 BC848 BC849 BC850 Text: BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V http://onsemi.com ESD Rating – Machine Model: >400 V COLLECTOR 3 MAXIMUM RATINGS	Original	BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 BC846 BC846ALT3 BC846BLT1 BC846BLT3 BC847ALT1 BC849 BC850	PDF
MARKING U1 SOT23-6 Abstract: No abstract text available Text: BCX17LT1, BCX18LT1, PNP BCX19LT1, NPN General Purpose Transistors Voltage and Current are negative for PNP transistors http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS PNP Value BCX18LT1 Symbol BCX17LT1 BCX19LT1 Collector–Emitter Voltage VCEO 45 25	Original	BCX17LT1, BCX18LT1, BCX19LT1, BCX17LT1 BCX19LT1 BCX18LT1 BCX17LT1 BCX18LT1 BCX19LT1 236AB) MARKING U1 SOT23-6	PDF
BSS64LT1 Abstract: No abstract text available Text: ON Semiconductort Driver Transistor BSS64LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 120 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C	Original	BSS64LT1 r14525 BSS64LT1/D BSS64LT1	PDF
bc807 Abstract: BC807-40LT1 BC807-16LT1 BC807-25LT1 Text: ON Semiconductort BC807-16LT1 BC807-25LT1 BC807-40LT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 V Collector–Base Voltage VCBO –50 V Emitter–Base Voltage VEBO –5.0 V IC –500	Original	BC807-16LT1 BC807-25LT1 BC807-40LT1 236AB) r14525 BC807 16LT1/D BC807-40LT1 BC807-16LT1 BC807-25LT1	PDF
BCW68GLT1 Abstract: No abstract text available Text: ON Semiconductort BCW68GLT1 General Purpose Transistor PNP Silicon 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –800 mAdc Symbol Max	Original	BCW68GLT1 236AB) r14525 BCW68GLT1/D BCW68GLT1	PDF
BC817 Abstract: BC817-16LT1 BC817-25LT1 BC817-40LT1 Text: ON Semiconductort BC817-16LT1 BC817-25LT1 BC817-40LT1 General Purpose Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 45 V Collector–Base Voltage VCBO 50 V Emitter–Base Voltage VEBO 5.0 V IC 500 mAdc Collector Current — Continuous	Original	BC817-16LT1 BC817-25LT1 BC817-40LT1 236AB) r14525 BC817 16LT1/D BC817-16LT1 BC817-25LT1 BC817-40LT1	PDF
BSV52LT1 Abstract: No abstract text available Text: ON Semiconductort Switching Transistor BSV52LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 12 Vdc Collector–Base Voltage VCBO 20 Vdc IC 100 mAdc Collector Current — Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic	Original	BSV52LT1 r14525 BSV52LT1/D BSV52LT1	PDF
BCW65ALT1 Abstract: No abstract text available Text: ON Semiconductort BCW65ALT1 General Purpose Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 32 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 800 mAdc Symbol Max Unit PD 225	Original	BCW65ALT1 236AB) r14525 BCW65ALT1/D BCW65ALT1	PDF
1GM sot-23 transistor Abstract: 1GM sot-23 MMBTA05LT1 MMBTA06 MMBTA06LT1 MMBTA05 Text: MMBTA05LT1 MMBTA06LT1* Driver Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA05 MMBTA06 Unit Collector–Emitter Voltage VCEO 60 80 Vdc Collector–Base Voltage VCBO 60 80 Vdc Emitter–Base Voltage VEBO 4.0 Vdc	Original	MMBTA05LT1 MMBTA06LT1* MMBTA05 MMBTA06 r14525 MMBTA05LT1/D 1GM sot-23 transistor 1GM sot-23 MMBTA05LT1 MMBTA06 MMBTA06LT1 MMBTA05	PDF
NPN 200 VOLTS POWER TRANSISTOR Abstract: MMBT918LT1 Text: ON Semiconductort VHF/UHF Transistor MMBT918LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc IC 50 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C	Original	MMBT918LT1 r14525 MMBT918LT1/D NPN 200 VOLTS POWER TRANSISTOR MMBT918LT1	PDF
BSS63LT1 Abstract: No abstract text available Text: ON Semiconductort High Voltage Transistor BSS63LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –100 Vdc Collector–Emitter Voltage RBE = 10 kΩ VCER 3 Vdc –110 Collector Current — Continuous 1 IC –100 mAdc	Original	BSS63LT1 r14525 BSS63LT1/D BSS63LT1	PDF
MMBTA55 Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1 Text: ON Semiconductort Driver Transistors MMBTA55LT1 MMBTA56LT1* PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit Collector–Emitter Voltage VCEO –60 –80 Vdc Collector–Base Voltage VCBO –60 –80 Vdc Emitter–Base Voltage	Original	MMBTA55LT1 MMBTA56LT1 MMBTA55 MMBTA56 r14525 MMBTA55LT1/D MMBTA55 MMBTA55LT1 MMBTA56 MMBTA56LT1	PDF
MMBTA63 Abstract: MMBTA63LT1 MMBTA64 MMBTA64LT1 Text: ON Semiconductort Darlington Transistors MMBTA63LT1 MMBTA64LT1* PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES –30 Vdc Collector–Base Voltage VCBO –30 Vdc Emitter–Base Voltage	Original	MMBTA63LT1 MMBTA64LT1 236AF) r14525 MMBTA63LT1/D MMBTA63 MMBTA63LT1 MMBTA64 MMBTA64LT1	PDF
MMBF5457LT1 Abstract: No abstract text available Text: ON Semiconductort JFET Ċ General Purpose Transistor MMBF5457LT1 N–Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc VGS r 25 Vdc IG 10 mAdc Reverse Gate–Source Voltage Gate Current 3 1	Original	MMBF5457LT1 236AB) r14525 MMBF5457LT1/D MMBF5457LT1	PDF

BC856 Abstract: BC856ALT1 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1 BC859 Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage	Original	BC856ALT1 BC856 BC857 BC858, BC859 r14525 BC856 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1 BC859	PDF
MMBT4126LT1 Abstract: No abstract text available Text: MMBT4126LT1 Preferred Device General Purpose Transistor PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage	Original	MMBT4126LT1 r14525 MMBT4126LT1/D MMBT4126LT1	PDF
SOT-23 A8A Abstract: marking A8K A8H SOT-23 Text: MMUN2211LT1 Series Preferred Device Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor	Original	MMUN2211LT1 OT-23 r14525 MMUN2211LT1/D SOT-23 A8A marking A8K A8H SOT-23	PDF
MMBTA42 Abstract: MMBTA42LT1 MMBTA43 MMBTA43LT1 Text: ON Semiconductort MMBTA42LT1* MMBTA43LT1 High Voltage Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Symbol MMBTA42 MMBTA43 Unit Collector–Emitter Voltage Rating VCEO 300 200 Vdc Collector–Base Voltage VCBO 300 200 Vdc Emitter–Base Voltage	Original	MMBTA42LT1 MMBTA43LT1 MMBTA42 MMBTA43 236AB) r14525 MMBTA42LT1/D MMBTA42 MMBTA42LT1 MMBTA43 MMBTA43LT1	PDF
MMBF5460LT1 Abstract: No abstract text available Text: ON Semiconductort JFET General Purpose Transistor MMBF5460LT1 P–Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG 40 Vdc Reverse Gate–Source Voltage VGSR 40 Vdc IGF 10 mAdc Forward Gate Current 3 1 THERMAL CHARACTERISTICS Characteristic	Original	MMBF5460LT1 236AB) r14525 MMBF5460LT1/D MMBF5460LT1	PDF
BCW32LT1 Abstract: marking 5K MARKING D2X Text: BCW32LT1 General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 32 Vdc Collector-Base Voltage VCBO 32 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Value Unit	Original	BCW32LT1 r14153 BCW32LT1/D BCW32LT1 marking 5K MARKING D2X	PDF
MMBT3640LT1 Abstract: No abstract text available Text: ON Semiconductort Switching Transistor MMBT3640LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –12 Vdc Collector–Base Voltage VCBO –12 Vdc Emitter–Base Voltage VEBO –4.0 Vdc IC –80 mAdc Symbol Max Unit	Original	MMBT3640LT1 r14525 MMBT3640LT1/D MMBT3640LT1	PDF
1N914 Abstract: MMBT5401LT1 Text: ON Semiconductort High Voltage Transistor MMBT5401LT1 PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –150 Vdc Collector–Base Voltage VCBO –160 Vdc Emitter–Base Voltage VEBO –5.0	Original	MMBT5401LT1 r14525 MMBT5401LT1/D 1N914 MMBT5401LT1	PDF
Untitled Abstract: No abstract text available Text: BCW32LT1 General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 32 Vdc Collector-Base Voltage VCBO 32 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Value Unit	Original	BCW32LT1 BCW32LT1 BCW32LT1/D \\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000817\08162000 3\ONSM\08032000	PDF
marking C1 Abstract: TMPTA70 TMPT5401 h2t1 Text: PNP TRANSISTORS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T. = 25°C V BF CBO v (BR)CEO V(BR)EBO Max. @ v CB Device hFE We «T @ lc @ v CE Max. @ lc Marking (V) (V) (V) (nA) BCW29 C1 303 32 5.0 100 20 120 260 2.0 BCW30 C2 3ID3 32 5.0 100 20 215 500 2.0	OCR Scan	OT-23/TO-236AB BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D BCW67A BCW67B BCW68F marking C1 TMPTA70 TMPT5401 h2t1	PDF

303 SOT-23 TRANSISTOR Search Results

303 SOT-23 TRANSISTOR Result Highlights (5)

303 SOT-23 TRANSISTOR Datasheets Context Search

BC846

MARKING U1 SOT23-6

BSS64LT1

bc807

BCW68GLT1

BC817

BSV52LT1

BCW65ALT1

1GM sot-23 transistor

NPN 200 VOLTS POWER TRANSISTOR

BSS63LT1

MMBTA55

MMBTA63

MMBF5457LT1

BC856

MMBT4126LT1

SOT-23 A8A

MMBTA42

MMBF5460LT1

BCW32LT1

MMBT3640LT1

1N914

Untitled

marking C1