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    303 SOT-23 TRANSISTOR Search Results

    303 SOT-23 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    303 SOT-23 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC846

    Abstract: BC846ALT1 BC846ALT3 BC846BLT1 BC846BLT3 BC847 BC847ALT1 BC848 BC849 BC850
    Text: BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V http://onsemi.com ESD Rating – Machine Model: >400 V COLLECTOR 3 MAXIMUM RATINGS


    Original     		PDF BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 BC846 BC846ALT3 BC846BLT1 BC846BLT3 BC847ALT1 BC849 BC850

    MARKING U1 SOT23-6

    Abstract: No abstract text available
    Text: BCX17LT1, BCX18LT1, PNP BCX19LT1, NPN General Purpose Transistors Voltage and Current are negative for PNP transistors http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS PNP Value BCX18LT1 Symbol BCX17LT1 BCX19LT1 Collector–Emitter Voltage VCEO 45 25


    Original     		PDF BCX17LT1, BCX18LT1, BCX19LT1, BCX17LT1 BCX19LT1 BCX18LT1 BCX17LT1 BCX18LT1 BCX19LT1 236AB) MARKING U1 SOT23-6

    BSS64LT1

    Abstract: No abstract text available
    Text: ON Semiconductort Driver Transistor BSS64LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 120 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C


    Original     		PDF BSS64LT1 r14525 BSS64LT1/D BSS64LT1

    bc807

    Abstract: BC807-40LT1 BC807-16LT1 BC807-25LT1
    Text: ON Semiconductort BC807-16LT1 BC807-25LT1 BC807-40LT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 V Collector–Base Voltage VCBO –50 V Emitter–Base Voltage VEBO –5.0 V IC –500


    Original     		PDF BC807-16LT1 BC807-25LT1 BC807-40LT1 236AB) r14525 BC807 16LT1/D BC807-40LT1 BC807-16LT1 BC807-25LT1

    BCW68GLT1

    Abstract: No abstract text available
    Text: ON Semiconductort BCW68GLT1 General Purpose Transistor PNP Silicon 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –800 mAdc Symbol Max


    Original     		PDF BCW68GLT1 236AB) r14525 BCW68GLT1/D BCW68GLT1

    BC817

    Abstract: BC817-16LT1 BC817-25LT1 BC817-40LT1
    Text: ON Semiconductort BC817-16LT1 BC817-25LT1 BC817-40LT1 General Purpose Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 45 V Collector–Base Voltage VCBO 50 V Emitter–Base Voltage VEBO 5.0 V IC 500 mAdc Collector Current — Continuous


    Original     		PDF BC817-16LT1 BC817-25LT1 BC817-40LT1 236AB) r14525 BC817 16LT1/D BC817-16LT1 BC817-25LT1 BC817-40LT1

    BSV52LT1

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Transistor BSV52LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 12 Vdc Collector–Base Voltage VCBO 20 Vdc IC 100 mAdc Collector Current — Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic


    Original     		PDF BSV52LT1 r14525 BSV52LT1/D BSV52LT1

    BCW65ALT1

    Abstract: No abstract text available
    Text: ON Semiconductort BCW65ALT1 General Purpose Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 32 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 800 mAdc Symbol Max Unit PD 225


    Original     		PDF BCW65ALT1 236AB) r14525 BCW65ALT1/D BCW65ALT1

    1GM sot-23 transistor

    Abstract: 1GM sot-23 MMBTA05LT1 MMBTA06 MMBTA06LT1 MMBTA05
    Text: MMBTA05LT1 MMBTA06LT1* Driver Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA05 MMBTA06 Unit Collector–Emitter Voltage VCEO 60 80 Vdc Collector–Base Voltage VCBO 60 80 Vdc Emitter–Base Voltage VEBO 4.0 Vdc


    Original     		PDF MMBTA05LT1 MMBTA06LT1* MMBTA05 MMBTA06 r14525 MMBTA05LT1/D 1GM sot-23 transistor 1GM sot-23 MMBTA05LT1 MMBTA06 MMBTA06LT1 MMBTA05

    NPN 200 VOLTS POWER TRANSISTOR

    Abstract: MMBT918LT1
    Text: ON Semiconductort VHF/UHF Transistor MMBT918LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc IC 50 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C


    Original     		PDF MMBT918LT1 r14525 MMBT918LT1/D NPN 200 VOLTS POWER TRANSISTOR MMBT918LT1

    BSS63LT1

    Abstract: No abstract text available
    Text: ON Semiconductort High Voltage Transistor BSS63LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –100 Vdc Collector–Emitter Voltage RBE = 10 kΩ VCER 3 Vdc –110 Collector Current — Continuous 1 IC –100 mAdc


    Original     		PDF BSS63LT1 r14525 BSS63LT1/D BSS63LT1

    MMBTA55

    Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
    Text: ON Semiconductort Driver Transistors MMBTA55LT1 MMBTA56LT1* PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit Collector–Emitter Voltage VCEO –60 –80 Vdc Collector–Base Voltage VCBO –60 –80 Vdc Emitter–Base Voltage


    Original     		PDF MMBTA55LT1 MMBTA56LT1 MMBTA55 MMBTA56 r14525 MMBTA55LT1/D MMBTA55 MMBTA55LT1 MMBTA56 MMBTA56LT1

    MMBTA63

    Abstract: MMBTA63LT1 MMBTA64 MMBTA64LT1
    Text: ON Semiconductort Darlington Transistors MMBTA63LT1 MMBTA64LT1* PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES –30 Vdc Collector–Base Voltage VCBO –30 Vdc Emitter–Base Voltage


    Original     		PDF MMBTA63LT1 MMBTA64LT1 236AF) r14525 MMBTA63LT1/D MMBTA63 MMBTA63LT1 MMBTA64 MMBTA64LT1

    MMBF5457LT1

    Abstract: No abstract text available
    Text: ON Semiconductort JFET Ċ General Purpose Transistor MMBF5457LT1 N–Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc VGS r 25 Vdc IG 10 mAdc Reverse Gate–Source Voltage Gate Current 3 1


    Original     		PDF MMBF5457LT1 236AB) r14525 MMBF5457LT1/D MMBF5457LT1

    BC856

    Abstract: BC856ALT1 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1 BC859
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage


    Original     		PDF BC856ALT1 BC856 BC857 BC858, BC859 r14525 BC856 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1 BC859

    MMBT4126LT1

    Abstract: No abstract text available
    Text: MMBT4126LT1 Preferred Device General Purpose Transistor PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage


    Original     		PDF MMBT4126LT1 r14525 MMBT4126LT1/D MMBT4126LT1

    SOT-23 A8A

    Abstract: marking A8K A8H SOT-23
    Text: MMUN2211LT1 Series Preferred Device Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF MMUN2211LT1 OT-23 r14525 MMUN2211LT1/D SOT-23 A8A marking A8K A8H SOT-23

    MMBTA42

    Abstract: MMBTA42LT1 MMBTA43 MMBTA43LT1
    Text: ON Semiconductort MMBTA42LT1* MMBTA43LT1 High Voltage Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Symbol MMBTA42 MMBTA43 Unit Collector–Emitter Voltage Rating VCEO 300 200 Vdc Collector–Base Voltage VCBO 300 200 Vdc Emitter–Base Voltage


    Original     		PDF MMBTA42LT1 MMBTA43LT1 MMBTA42 MMBTA43 236AB) r14525 MMBTA42LT1/D MMBTA42 MMBTA42LT1 MMBTA43 MMBTA43LT1

    MMBF5460LT1

    Abstract: No abstract text available
    Text: ON Semiconductort JFET General Purpose Transistor MMBF5460LT1 P–Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG 40 Vdc Reverse Gate–Source Voltage VGSR 40 Vdc IGF 10 mAdc Forward Gate Current 3 1 THERMAL CHARACTERISTICS Characteristic


    Original     		PDF MMBF5460LT1 236AB) r14525 MMBF5460LT1/D MMBF5460LT1

    BCW32LT1

    Abstract: marking 5K MARKING D2X
    Text: BCW32LT1 General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 32 Vdc Collector-Base Voltage VCBO 32 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Value Unit


    Original     		PDF BCW32LT1 r14153 BCW32LT1/D BCW32LT1 marking 5K MARKING D2X

    MMBT3640LT1

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Transistor MMBT3640LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –12 Vdc Collector–Base Voltage VCBO –12 Vdc Emitter–Base Voltage VEBO –4.0 Vdc IC –80 mAdc Symbol Max Unit


    Original     		PDF MMBT3640LT1 r14525 MMBT3640LT1/D MMBT3640LT1

    1N914

    Abstract: MMBT5401LT1
    Text: ON Semiconductort High Voltage Transistor MMBT5401LT1 PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –150 Vdc Collector–Base Voltage VCBO –160 Vdc Emitter–Base Voltage VEBO –5.0


    Original     		PDF MMBT5401LT1 r14525 MMBT5401LT1/D 1N914 MMBT5401LT1

    Untitled

    Abstract: No abstract text available
    Text: BCW32LT1 General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 32 Vdc Collector-Base Voltage VCBO 32 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Value Unit


    Original     		PDF BCW32LT1 BCW32LT1 BCW32LT1/D \\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000817\08162000 3\ONSM\08032000

    marking C1

    Abstract: TMPTA70 TMPT5401 h2t1
    Text: PNP TRANSISTORS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T. = 25°C V BF CBO v (BR)CEO V(BR)EBO Max. @ v CB Device hFE We «T @ lc @ v CE Max. @ lc Marking (V) (V) (V) (nA) BCW29 C1 303 32 5.0 100 20 120 260 2.0 BCW30 C2 3ID3 32 5.0 100 20 215 500 2.0


    OCR Scan     		PDF OT-23/TO-236AB BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D BCW67A BCW67B BCW68F marking C1 TMPTA70 TMPT5401 h2t1