RPI-302
Abstract: No abstract text available
Text: RPI-302 Sensors Photointerrupter, double-layer mold type RPI-302 The RPI-302 is standard tall package photointerrupter. This product can be fix on PCB by snap. zExternal dimensions Units : mm zApplication Reel count sensor for VCR Notes: 1. Unspecified tolerance shall be ±0.2.
|
Original
|
PDF
|
RPI-302
RPI-302
|
ST-303
Abstract: ST-302
Text: Photo transistors KODENSHI ST-302・ST-303 DIMENSIONS Unit : mm The ST-302, 303 a high-sensitivity NPN silicon phototransistor mounted in a clear sidelooking package, is compact, low profile and easy to mount. FEATURES •Low profile package •Compact •Low-cost
|
Original
|
PDF
|
ST-302ST-303
ST-302,
ST-302
ST-303
000lx
2856K
ST-303
ST-302
|
foto transistor
Abstract: 302 phototransistor datasheet phototransistor 302 Q62702-P1623 Q62702-P1624 Q62702-P1625 Q62702-P1626 Q62702-P1627 Q62702-P1641 E F 302
Text: SFH 302 SFH 302 fet06017 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm
|
Original
|
PDF
|
fet06017
Q62702-P1641
Q62702-P1623
Q62702-P1624
Q62702-P1625
Q62702-P1626
foto transistor
302 phototransistor datasheet
phototransistor 302
Q62702-P1623
Q62702-P1624
Q62702-P1625
Q62702-P1626
Q62702-P1627
Q62702-P1641
E F 302
|
Untitled
Abstract: No abstract text available
Text: フォトトランジスタ PHOTOTRANSISTORS ST-302 ST-302は縦型透明樹脂でモールドされた高感度のシリコンフォト •外形寸法 DIMENSIONS（Unit : mm） The ST-302 is a high-sensitivity NPN silicon phototransistor 0.5 mounted in a clear low profile side-viewing package. This
|
Original
|
PDF
|
ST-302
ST-302ã
ST-302
|
phototransistor 302
Abstract: photo transistor high current PHOTO TRANSISTOR A 720 transistor TRansistor A 940 Rise time of photo transistor 720 transistor 302 phototransistor npn photo transistor
Text: OST-302 PHOTO TRANSISTOR • General Description The OST-302 is high sensitivity NPN silicon photo-transistor mounted in a black side-looking package , is compact , low profile and easy to mount. ■ Features ˙Compact ˙Low profile package ˙Low cost plastic package
|
Original
|
PDF
|
OST-302
OST-302
1000Lux
2000Lux
2856K
phototransistor 302
photo transistor high current
PHOTO TRANSISTOR
A 720 transistor
TRansistor A 940
Rise time of photo transistor
720 transistor
302 phototransistor
npn photo transistor
|
foto transistor
Abstract: GETY6017 Q62702-P1641
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar
|
Original
|
PDF
|
Q627any
foto transistor
GETY6017
Q62702-P1641
|
302 opto
Abstract: GET06017 Q62702-P1624 Q62702-P1625 Q62702-P1641 npn phototransistor
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar
|
Original
|
PDF
|
Q62702-P1641ppe.
GET06017
302 opto
GET06017
Q62702-P1624
Q62702-P1625
Q62702-P1641
npn phototransistor
|
Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar
|
Original
|
PDF
|
GETY6017
|
Infrared Phototransistor 302
Abstract: LTR-5576D 302 phototransistor datasheet LTE-302-M LTE-309 LTR-5986DH phototransistor 302 302 phototransistor if lte LTE-302
Text: GaAs Plastic Side Look Infrared Emitting Diode LTE-302-M/LTE-309 Features Package Dimensions Selected to specific on-line intensity and radiant intensity ranges. Low cost plastic end looking package. Mechanically and spectrally matched to the LTR-5576D/ LTR-5986DH series of phototransistor.
|
Original
|
PDF
|
LTE-302-M/LTE-309
LTR-5576D/
LTR-5986DH
LTE-302
LTE-302-M
LTE-302-M/LTE-309
LTE-309
Infrared Phototransistor 302
LTR-5576D
302 phototransistor datasheet
LTE-302-M
LTE-309
phototransistor 302
302 phototransistor
if lte
|
OPL126A
Abstract: No abstract text available
Text: Issued July 1985 F4866 High voltage opto-isolator Stocknumber 302-148 The RS OPL126A opto-isolator consists of a GaAsP light emitting diode optically coupled to an NPN silicon phototransistor. The form of construction provides 10kV isolation between input and output, with a minimum
|
Original
|
PDF
|
F4866
OPL126A
812252U
|
OPL126A
Abstract: RS Components transistor NN179RS
Text: Issued July 1985 004-866 Data Pack F High voltage opto-isolator Data Sheet RS stock number 302-148 The RS OPL126A opto-isolator consists of a GaAsP light emitting diode optically coupled to an NPN silicon phototransistor. The form of construction provides 10kV isolation between input and output, with a minimum current
|
Original
|
PDF
|
OPL126A
RS Components transistor
NN179RS
|
OPL126A
Abstract: 812252U optoisolator IC OPTO-ISOLATOR Optoisolator 30214
Text: Issued March 1997 232-2560 Data Pack F High voltage opto-isolator Data Sheet RS stock number 302-148 The RS OPL126A opto-isolator consists of a GaAsP light emitting diode optically coupled to an NPN silicon phototransistor. The form of construction provides 10kV isolation between input and output, with a minimum current
|
Original
|
PDF
|
OPL126A
812252U
optoisolator IC
OPTO-ISOLATOR
Optoisolator
30214
|
565-2 vde
Abstract: VDE0304
Text: PLASTIC HOLDER, SEPARABLE ARRANGEABLE IN ROWS KMA 301 KMA 307 KMA 302 KMA 308 KMA 303 KMA 309 KMA 304 KMA 310 KMA 305 KMA 311 KMA 306 KMA 312 EXAMPLE EXAMPLE SERIES KMA 301 TYPE PEAK FULL LUMINOUS INTENSITY VIEWING ANGLE TYP. IF FORWARD VOLTAGE IF = 20 mA
|
Original
|
PDF
|
|
Side Look
Abstract: No abstract text available
Text: IR Emitter and Detector Product Data Sheet LTE-302 Spec No.: DS-50-92-0009 Effective Date: 04/12/2000 Revision: B LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.
|
Original
|
PDF
|
LTE-302
DS-50-92-0009
BNS-OD-FC001/A4
LTR-301
LTE-302
BNS-OD-C131/A4
Side Look
|
|
|
Sunshine Science
Abstract: sunshine ST-302 82c08 22C02
Text: n ffigfifi ST-302 PHOTOTRANSISTORS SU NSH INE SC IE N C E su n sh in e DIMENSIONS U n it: mm S T -3 0 2 & v l i v b ? > * s Z 2 V to T he S T -302 is a h ig h -se n sitivity NPN silicon p ho to tra n sisto r m o u n te d in a c le a r low p ro file s id e -v ie w in g p a c k a g e . T h is
|
OCR Scan
|
PDF
|
ST-302
ST-302
2856K
100CTC)
Ta-25
Sunshine Science
sunshine
82c08
22C02
|
QAA27
Abstract: sfh siemens
Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Features Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm
|
OCR Scan
|
PDF
|
DGflfl272
QAA27
sfh siemens
|
SIEMENS Phototransistors BPY
Abstract: 2108a siemens dioden SFH-506 SFH100 BPW21 300FA 2108 A SFH 314 SFH-10
Text: Silicon Photodetectors Si-Fotodetektoren Summary of Types Typenübersicht 1. Integrierter Empfänger Integrated Receiver 2. Fototransistoren Phototransistors ♦ SFH 506 BPX 81 3. SFH 300/FA SFH 313/FA SFH 314/FA BP 103 SFH 302 SFH 305 BPX 83 BP 104 F BPW 34 FA
|
OCR Scan
|
PDF
|
300/FA
313/FA
314/FA
309/FA
310/FA
309P/PFA
303/FA
203/FA
213/FA
214/FA
SIEMENS Phototransistors BPY
2108a
siemens dioden
SFH-506
SFH100
BPW21
300FA
2108 A
SFH 314
SFH-10
|
BPX48
Abstract: SFH291 SFH100 fh205 BPW-21 SFH 314 fotodioden SFH317 bpx90 SFH2030
Text: Si-Fotodetektoren Silicon Photodetectors Typenübersicht Summary of Types 1. Integrierter Empfänger Integrated Receiver 2. Fototransistoren Phototransistors S ' y •- S BP 103 SFH 302 S F H 50 6 BPX81 BPX 83 SFH 305 V BP X 90/F BPX 38 BP 103 B/BF SFH 313/FA
|
OCR Scan
|
PDF
|
313/FA
314/FA
BPY62
BPX81
310/FA
303/F
317/F
213/FA
214/FA
BPX48/F
BPX48
SFH291
SFH100
fh205
BPW-21
SFH 314
fotodioden
SFH317
bpx90
SFH2030
|
Untitled
Abstract: No abstract text available
Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor Chip p o s itio n SFH 302 R adiant sensitive area 0 0 .4 5 3.0 A p pro x. w e ight 0.5 g M a ß e in mm, w enn nicht anders angeg eben/D im ension s in mm, u n less otherw ise specified Wesentliche Merkmale
|
OCR Scan
|
PDF
|
Q62702-P1641
Q62702-P1623
Q62702-P1624
Q62702-P1625
Q62702-P1626
Q62702-P1627
|
FR 309 diode
Abstract: Infrared Phototransistor 302 2D05 LTR-5888
Text: • w p r A i II L I I C L f J k l l GaAs PLASTIC SIDE LOOK INFRARED EMITTING DIODE LTE-302-M/LTE-309 FEATURE •S e le c te d to specific o n -lin e intensity and rad iant intensity ranges. •Low cost plastic side looking package. •Mechanically and spectrally matched to the CTR-5576D/LTR5888DH series of phototransistor.
|
OCR Scan
|
PDF
|
LTE-302-M/LTE-309
CTR-5576D/LTR5888DH
LTE-309
LTE-302-M/LTE-309
LTE-302-M
LTE-309
FR 309 diode
Infrared Phototransistor 302
2D05
LTR-5888
|
Untitled
Abstract: No abstract text available
Text: O K I electronic components T35L_ Silicon NPN Epitaxial Planar Phototransistor_ GENERAL DESCRIPTION The planar structure of the OKI T35L silicon phototransistor makes it a highly sensitive photodetector. High reliability is ensured by a hermetically sealed T O -18 package.
|
OCR Scan
|
PDF
|
1000Lx
100LX
|
Untitled
Abstract: No abstract text available
Text: O K I electronic components T55L_ Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T55L silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed TO-18 package.
|
OCR Scan
|
PDF
|
b72M240
L724240
b72424Q
b72M2M0
b7E4E40
|
PHOTO SENSORS
Abstract: diagram ta 306 ic 307 ex photo sensor 700 T55L photo resistance
Text: O K I electronic com ponents T55L_ Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T55L silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed TO-18 package.
|
OCR Scan
|
PDF
|
b72M240
b724H40
P4240
b72H2M0
b7E4E40
0010T2Ã
PHOTO SENSORS
diagram ta 306
ic 307 ex
photo sensor 700
T55L
photo resistance
|
bp 103-2
Abstract: Q62702-P79-S2 bp 103-5 Q62702-P1641
Text: Silicon Photodetectors Si-Fotodetektoren 2. Fototransistoren 2. Phototransistors 2.4 2.4 im hermetisch dichten Metallgehäuse Type Package deg. mm2 mA V nm US ±8 0.12 0.5 . 2.5 50 420 . 1130 BPY 62-3 0.8 . 1.6 7 Q60215-Y1112 BPY 62-4 1.25 . 2.5 9
|
OCR Scan
|
PDF
|
Q62702-P47
Q62702-P928
Q62702-P76
Q62702-P55
bp 103-2
Q62702-P79-S2
bp 103-5
Q62702-P1641
|