RPI-302
Abstract: No abstract text available
Text: RPI-302 Sensors Photointerrupter, double-layer mold type RPI-302 The RPI-302 is standard tall package photointerrupter. This product can be fix on PCB by snap. zExternal dimensions Units : mm zApplication Reel count sensor for VCR Notes: 1. Unspecified tolerance shall be ±0.2.
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RPI-302
RPI-302
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"tilt sensor"
Abstract: SUN POSITION SENSOR tilt sensor SG-302
Text: Tilt Sensor KODENSHI SG-302 DIMENSIONS Unit : mm The SG-302 reflective sensor for paper sensing combine high-output GaAs IRED with high sensitivity photodiode. It is most applicable to tilt sensor. FEATURES •High performance •High-speed response APPLICATIONS
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SG-302
SG-302
"tilt sensor"
SUN POSITION SENSOR
tilt sensor
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ST-303
Abstract: ST-302
Text: Photo transistors KODENSHI ST-302・ST-303 DIMENSIONS Unit : mm The ST-302, 303 a high-sensitivity NPN silicon phototransistor mounted in a clear sidelooking package, is compact, low profile and easy to mount. FEATURES •Low profile package •Compact •Low-cost
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ST-302ST-303
ST-302,
ST-302
ST-303
000lx
2856K
ST-303
ST-302
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foto transistor
Abstract: 302 phototransistor datasheet phototransistor 302 Q62702-P1623 Q62702-P1624 Q62702-P1625 Q62702-P1626 Q62702-P1627 Q62702-P1641 E F 302
Text: SFH 302 SFH 302 fet06017 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm
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fet06017
Q62702-P1641
Q62702-P1623
Q62702-P1624
Q62702-P1625
Q62702-P1626
foto transistor
302 phototransistor datasheet
phototransistor 302
Q62702-P1623
Q62702-P1624
Q62702-P1625
Q62702-P1626
Q62702-P1627
Q62702-P1641
E F 302
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Untitled
Abstract: No abstract text available
Text: フォトトランジスタ PHOTOTRANSISTORS ST-302 ST-302は縦型透明樹脂でモールドされた高感度のシリコンフォト •外形寸法 DIMENSIONS（Unit : mm） The ST-302 is a high-sensitivity NPN silicon phototransistor 0.5 mounted in a clear low profile side-viewing package. This
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ST-302
ST-302ã
ST-302
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phototransistor 302
Abstract: photo transistor high current PHOTO TRANSISTOR A 720 transistor TRansistor A 940 Rise time of photo transistor 720 transistor 302 phototransistor npn photo transistor
Text: OST-302 PHOTO TRANSISTOR • General Description The OST-302 is high sensitivity NPN silicon photo-transistor mounted in a black side-looking package , is compact , low profile and easy to mount. ■ Features ˙Compact ˙Low profile package ˙Low cost plastic package
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OST-302
OST-302
1000Lux
2000Lux
2856K
phototransistor 302
photo transistor high current
PHOTO TRANSISTOR
A 720 transistor
TRansistor A 940
Rise time of photo transistor
720 transistor
302 phototransistor
npn photo transistor
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Untitled
Abstract: No abstract text available
Text: 赤外発光ダイオード GaAs INFRARED EMITTING DIODES(GaAs) EL-302 EL-302は縦型透明樹脂でモールドされた高出力GaAs赤外発光 •外形寸法 DIMENSIONS（Unit : mm） 0.5 The EL-302 is a high-power GaAs IRED mounted in a clear low
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EL-302
EL-302ã
EL-302
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SHARP S21ME4
Abstract: S21ME4 BS415 BS7002 E64380 S21ME S21ME3 S21ME3F S21ME3I S21ME4F
Text: 2001-10-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 75-302-56 S21ME3 optokopplare 75-302-64 S21ME4 optokopplare S21ME Series S21ME Series European Safety Standard Approved,
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S21ME3
S21ME4
S21ME
S21ME3I/
S21ME4I/
S21ME3FI/
S21ME4FI
SHARP S21ME4
BS415
BS7002
E64380
S21ME3F
S21ME3I
S21ME4F
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30 mHz BW preamplifier
Abstract: HFD3380-302
Text: 29 January 1998 HFD3380-302 Connectorized PIN PLUS Preamplifier FEATURES • Prealigned SC Connector sleeve • High speed — 1 GHz OPHO_220.doc DESCRIPTION The HFD3380-302 is a high-performance 850 nm PIN P-Type / Instrinsic / N-type detector plus amplifier
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HFD3380-302
HFD3380-302
30 mHz BW preamplifier
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OSE-302
Abstract: Diode 302
Text: OSE-302 INFRARED EMITTING DIODE • General Description The OSE-302 is a high power GaAs IRED mounted in a clear side-looking package is compact low profile , and easy to mount . ■ Features ˙Compact ˙Low profile package ˙Low cost plastic package ˙Sidelooking plasric package
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OSE-302
OSE-302
100sec
10msec
Diode 302
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EL-302EL-303
Abstract: EL-302 EL-303
Text: Infrared Emitting Diodes GaAs KODENSHI EL-302・EL-303 DIMENSIONS (Unit : mm) The EL-302 a high-power GaAs IRED mounted in a clear sidelooking package, is compact, low profile, and easy to mount. FEATURES •Compact •Low profile package •Low-cost •Sidelooking plastic package
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EL-302EL-303
EL-302
EL-302
EL-303
10msec.
L-303
EL-302EL-303
EL-303
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HFD3380-302
Abstract: to46 package 54-Pin preamp
Text: HFD3380-302 Connectorized PIN PLUS Preamplifier FEATURES • Prealigned SC Connector sleeve • High speed — 1 GHz OPHO_220.doc DESCRIPTION The HFD3380-302 is a high-performance 850 nm PIN P-Type / Instrinsic / N-type detector plus amplifier packaged for high-speed data communications. The
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HFD3380-302
HFD3380-302
HFD332
to46 package
54-Pin preamp
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302-NSV
Abstract: No abstract text available
Text: : Weco - 302-NSV -DS : Page 1 of 4 DEPLUGGABLE TERMINAL STRIPS FOR PANEL / CHASSIS MOUNTING 302-NSV (-DS) 8.00 mm (0.315 in) Spacing - 1 - 12 poles Print this page ZOOM Dimensions: mm (in.) Length of Connector (L) L = No. of Poles x Center to Center Spacing - 2 mm
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302-NSV
300-J.
300-S
302-NSV
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E3MC-A41
Abstract: E3MC-MX41 E3MC-A11 E3MC-MA11 E3MC-MA41 E3MC-MX11 E3MC-X11 E3MC-X41 shock sensor amplifier input 12v
Text: Issued July 1998 302-0962 Data Pack D RGB Colour Sensor E3MC Data Sheet RS stock numbers 284-3326 and 302-9060 ● Built-in LED light source ensures long service life and maintenance-free operation. ● Discriminates differences in colour without being influenced by changes in ambient temperature,
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PHOTO TRANSISTOR 940nm
Abstract: PHOTO TRANSISTOR "photo transistor" TN2469TK electrooptical transistor
Text: PHOTO TRANSISTOR 光 電 晶 體 302 Photo Transistor Series Part Number: TN2469TK Package outlines NOTES: 1. All dimensions are in millimeters inches ; 2. Tolerances are ±0.2mm (0.008inch) unless otherwise noted. ITEM Resin (mold) Bonding wire MATERIALS
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TN2469TK
008inch)
260for
940nm
PHOTO TRANSISTOR 940nm
PHOTO TRANSISTOR
"photo transistor"
TN2469TK
electrooptical transistor
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Untitled
Abstract: No abstract text available
Text: チルトセンサ TIlT SENSORS SG-302 SG-302は高出力赤外発光ダイオードと、高感度フォトダイオー •外形寸法 DIMENSIONS（Unit : mm） ドを組み合わせた反射型フォトセンサです。チルトセンサとして最
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SG-302
SG-302ã
SG-302
900nm
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foto transistor
Abstract: GETY6017 Q62702-P1641
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar
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Q627any
foto transistor
GETY6017
Q62702-P1641
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302 opto
Abstract: GET06017 Q62702-P1624 Q62702-P1625 Q62702-P1641 npn phototransistor
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar
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Q62702-P1641ppe.
GET06017
302 opto
GET06017
Q62702-P1624
Q62702-P1625
Q62702-P1641
npn phototransistor
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MCE 2000
Abstract: 1 MEGA OHM RESISTOR 1 mega ohms resistor MCE-8V4C-302
Text: MCE-8V4C-302 850 nm VCSEL Features ♦ High speed ≥ 1 GHz. ♦ Photodiode for monitoring laser output. ♦ TO-46 hermetic packaging with a lens cap. ♦ Common cathode pin-out. Applications ♦ Optical communication system - Gigabit Ethernet - Fiber Channels
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MCE-8V4C-302
MCE-8V4C-302
MCE 2000
1 MEGA OHM RESISTOR
1 mega ohms resistor
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Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar
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GETY6017
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Infrared Phototransistor 302
Abstract: LTR-5576D 302 phototransistor datasheet LTE-302-M LTE-309 LTR-5986DH phototransistor 302 302 phototransistor if lte LTE-302
Text: GaAs Plastic Side Look Infrared Emitting Diode LTE-302-M/LTE-309 Features Package Dimensions Selected to specific on-line intensity and radiant intensity ranges. Low cost plastic end looking package. Mechanically and spectrally matched to the LTR-5576D/ LTR-5986DH series of phototransistor.
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LTE-302-M/LTE-309
LTR-5576D/
LTR-5986DH
LTE-302
LTE-302-M
LTE-302-M/LTE-309
LTE-309
Infrared Phototransistor 302
LTR-5576D
302 phototransistor datasheet
LTE-302-M
LTE-309
phototransistor 302
302 phototransistor
if lte
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Untitled
Abstract: No abstract text available
Text: HFD3380-302 Connectorized PIN PLUS Preamplifier FEATURES • Prealigned SC Connector sleeve • High speed a 1 GHz DESCRIPTION The HFD3380-302 is a high-performance 850 nm PIN P-Type / Instrinsic / N-type detector plus amplifier packaged for high-speed data communications. The
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HFD3380-302
HFD3380-302
MSS1S30
4S5143D
Q02E06S
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Sunshine Science
Abstract: sunshine ST-302 82c08 22C02
Text: n ffigfifi ST-302 PHOTOTRANSISTORS SU NSH INE SC IE N C E su n sh in e DIMENSIONS U n it: mm S T -3 0 2 & v l i v b ? > * s Z 2 V to T he S T -302 is a h ig h -se n sitivity NPN silicon p ho to tra n sisto r m o u n te d in a c le a r low p ro file s id e -v ie w in g p a c k a g e . T h is
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ST-302
ST-302
2856K
100CTC)
Ta-25
Sunshine Science
sunshine
82c08
22C02
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QAA27
Abstract: sfh siemens
Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Features Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm
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DGflfl272
QAA27
sfh siemens
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