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    300X3 Search Results

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    300X3 Price and Stock

    CTS Corporation 435F300X3GET

    5.0mm x 3.2mm 2-Pad Surface Moun
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    DigiKey 435F300X3GET Reel 1,000
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    Avnet Americas 435F300X3GET Reel 8 Weeks 1,000
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    Mouser Electronics 435F300X3GET
    • 1 $0.82
    • 10 $0.723
    • 100 $0.597
    • 1000 $0.47
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    CTS Corporation 416F300X3AAR

    CRYSTAL 30.0000MHZ 10PF SMD
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    DigiKey 416F300X3AAR Reel 3,000
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    Avnet Americas 416F300X3AAR Reel 12 Weeks 3,000
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    Avnet Abacus 416F300X3AAR Reel 10 Weeks 3,000
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    CTS Corporation 416F300X3IKT

    CRYSTAL 30.0000MHZ 8PF SMD
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    CTS Corporation 435F300X3CDT

    5.0mm x 3.2mm 2-Pad Surface Moun
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    DigiKey 435F300X3CDT Reel 1,000
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    Mouser Electronics 435F300X3CDT
    • 1 $0.74
    • 10 $0.647
    • 100 $0.534
    • 1000 $0.421
    • 10000 $0.399
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    CTS Corporation 416F300X3IKR

    CRYSTAL 30.0000MHZ 8PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 416F300X3IKR Reel 3,000
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    Avnet Americas 416F300X3IKR Reel 12 Weeks 3,000
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    Avnet Abacus 416F300X3IKR Reel 10 Weeks 3,000
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    300X3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Profile 8248 300x39,7 mm Weight (Kg/mt) Width (mm) Height (mm) RTH (C/W)* *Lenght (mm) 12,69 300 39,7 0,39 200 PADA ENGINEERING S.r.l. Via G. B. Pirelli, 11 - Saltara (PU) 61030 - Italy Tel. +39 0721 899555 - Fax. +39 0721 897064 - www.padaengineering.com


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    300x39 PDF

    parabolic antenna

    Abstract: antenna for 12GHZ parabolic microwave antenna Types of Radar Antenna long wave RADIO absorber
    Text: EMC Components IP-B, IB, IS, IR, IF-P, IF-R Material Radio Wave Absorbers Radio Wave Absorbing Materials A key factor in absorbing unwanted electromagnetic energy efficiently and completely is selecting the most appropriate materials for the application. This selection process must take into account


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    12GHz 30MHz parabolic antenna antenna for 12GHZ parabolic microwave antenna Types of Radar Antenna long wave RADIO absorber PDF

    1-645235-6

    Abstract: 100CL 4-530396-4 4X11 edge connector 32 package 11x7 453039 1-530843-2 1-645235-7
    Text: 107-68619 Packaging Specification GPL 267 SERIES Sep.13,05 1. PURPOSE 目的 Define the packaging specifiction and packaging method of GPL 267 Series. 订定 GPL 267 Series 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围 TYPE TYPE A


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    100CL 100CLf QR-ME-030B 1-645235-6 4-530396-4 4X11 edge connector 32 package 11x7 453039 1-530843-2 1-645235-7 PDF

    KTB688B

    Abstract: KTD718
    Text: SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E L MAXIMUM RATING Ta=25


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    KTB688B KTD718B. KTB688B KTD718 PDF

    KTD998

    Abstract: transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet
    Text: SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Recommended for 45~50W Audio Frequency W F U E Amplifier Output Stage. W V M I K N D J L S T B G ・Complementary to KTB778. MAXIMUM RATING Ta=25℃


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    KTD998 KTB778. 200x200x2mm 100x100x2mm 300x300x2mm KTD998 transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet PDF

    SYM53C896

    Abstract: 80960JT 273293 intel desktop board SERVICE MANUAL SMU22R
    Text: Intel Integrated RAID Controller Design Kit SMU22R Technical Product Specification January 2000 Order Number: 273293-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


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    SMU22R SYM53C896 80960JT 273293 intel desktop board SERVICE MANUAL SMU22R PDF

    LED21-TEC-PR

    Abstract: No abstract text available
    Text: LED21-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics.


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    LED21-TEC-PR LED21-TEC-PR 300x300 150-200mA PDF

    LED34-TEC-PR

    Abstract: No abstract text available
    Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 3.4 µm Model LED34-TEC-PR 24 µW •Light Emitting Diodes LED34-TEC-PR are designed for emitting at a spectral range around 3400 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on InAs substrates


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    LED34-TEC-PR LED34-TEC-PR LED34 LED34 LED34-PR PDF

    LED22

    Abstract: No abstract text available
    Text: LED22 TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. LED22 has a stable ouput power and a lifetime more then 80000 hours.


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    LED22 LED22 300x300 150-200mA PDF

    LED22-TEC

    Abstract: No abstract text available
    Text: LED22-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. LED22-TEC has a stable ouput power and a lifetime more then 80000 hours.


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    LED22-TEC LED22-TEC 300x300 150-200mA PDF

    LED20-TEC-PR

    Abstract: No abstract text available
    Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 2.05 µm Model LED20-TEC-PR 1.1 mW •Light Emitting Diodes LED20-TEC-PR are designed for emitting at a spectral range around 2050 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates


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    LED20-TEC-PR LED20-TEC-PR LED20 LED20 LED20-PR PDF

    Untitled

    Abstract: No abstract text available
    Text: LED36-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions


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    LED36-SMD3 LED36-SMD3 300x300 150-200mA PDF

    LED36-TEC

    Abstract: No abstract text available
    Text: LED36-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for good electron confinement.


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    LED36-TEC LED36-SMD3 300x300 150-200mA LED36-TEC PDF

    LED31-TEC

    Abstract: No abstract text available
    Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 3 .1 µ m Model LED31-TEC 14 µW •Light Emitting Diodes LED31-TEC are designed for emitting at a spectral range around 3100 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on InAs substrates


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    LED31-TEC LED31-TEC LED31 LED31 LED31-PR PDF

    LED43-TEC-PR

    Abstract: No abstract text available
    Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 4.3 µm Model LED43-TEC-PR 10 µW •Light Emitting Diodes LED43-TEC-PR are designed for emitting at a spectral range around 4300 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on InAs substrates


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    LED43-TEC-PR LED43-TEC-PR LED43TEC-PR LED43 LED43 LED43-PR PDF

    LED34

    Abstract: No abstract text available
    Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 3.4 µm 24 µW Model LED34 •Light Emitting Diodes LED34 are designed for emitting at a spectral range around 3400 nm. Heterostructures HS are grown on InAs substrates. The output emission can be modulated by current flowing in


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    LED34 LED34 LED34-PR PDF

    omron E3F

    Abstract: Y92E-M12PUR4A5M-L E3FZ-T86H-D e3f omron Y92E-M12PUR4S5M-L E3FZ-D87 Y92E-M12PUR4A2M-L Y92E-M12 E3FZ-T81H E3FZ-LS89H
    Text: E55E-EN-01+E3FZ-E3FR+Datasheet.FM Seite 1 Dienstag, 15. April 2008 5:17 17 Easy mounting photoelectric sensor in short M18 housing E3FZ/E3FR • Secure-click snap mounting for fast installation • High power LED for enhanced sensing distance • Short housing with less than


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    E55E-EN-01 NL-2132 omron E3F Y92E-M12PUR4A5M-L E3FZ-T86H-D e3f omron Y92E-M12PUR4S5M-L E3FZ-D87 Y92E-M12PUR4A2M-L Y92E-M12 E3FZ-T81H E3FZ-LS89H PDF

    E3X-DA11-N

    Abstract: E3X-DA41V E3XDA21N E3X-DA41-N E3X-DA21-N E3X-DA11V torque settings chart 12mm brass E32-L56E e3x-da41
    Text: E3X-DA-N Sense the Difference, Make a Difference! Digital Fiber Amplifier Amplifier ● Select from Three Clear Display Methods: Digital incident level Digital percent level LED Bar Display ● Save-wiring Connector ● Auto Power Control Mobile Console ● Remote Tuning and Adjustment


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    E3X-DA11-N E3X-DA41-N E3X-DA21-N E3X-DA51-N E39-K2 E39-K2 E32-T84S E313-E1-2 0601-2M E3X-DA11-N E3X-DA41V E3XDA21N E3X-DA41-N E3X-DA21-N E3X-DA11V torque settings chart 12mm brass E32-L56E e3x-da41 PDF

    12VDC sf 249

    Abstract: 230 97o Osram LED SMD 5630 diodo 2B
    Text: 2013 Catalogo VLM 2013 VLM Catalogue 2013 since 1945 570 www.vlm.it since 1945 Indice Index Indicazioni Generali General warnings 575 Simboli e definizioni Symbols and definitions 577 Tipi, classi, gradi di protezione Types, classes, degrees of protection


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    VG/71P VG/73P VL-5081-65-B VL-5081-65-BV VL-5081-85-B VL-5081-85-BV 12VDC sf 249 230 97o Osram LED SMD 5630 diodo 2B PDF

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION PATENT PENDING Part No. : TG.30.8113 Product Name : Apex Hinged TG.30 Ultra-Wideband 4G LTE Antenna Feature : LTE / GSM / CDMA /DCS /PCS / WCDMA / UMTS / HSDPA / GPRS / EDGE /GPS /Wi-Fi 698MHz to 960MHz, 1575.42MHz 1710MHz to 2700Mhz Typical 70%+ Efficiency and 3dBi+ Peak Gain


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    698MHz 960MHz, 42MHz 1710MHz 2700Mhz SPE-12-8-124/A/WY PDF

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION PATENT PENDING Part No. : TG.30.8113W Product Name : Apex White Hinged TG.30 Ultra-Wideband 4G LTE Antenna Feature : LTE / GSM / CDMA /DCS /PCS / WCDMA / UMTS / HSDPA / GPRS / EDGE /GPS /Wi-Fi 698MHz to 960MHz, 1575.42MHz 1710MHz to 2700Mhz Typical 70%+ Efficiency and 3dBi+ Peak Gain


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    698MHz 960MHz, 42MHz 1710MHz 2700Mhz SPE-12-8-125/A/WY PDF

    ua 180

    Abstract: x -12sl
    Text: Center part 180 WxH x l 2-foidSKWP X 30X 215 ^240x30x215 300x30x215 '*« S K iiP J.\ö k*0


    OCR Scan
    PDF

    NE644

    Abstract: 2SC2272 NE64400 NE64408 NE64480 NEC Microwave Semiconductors
    Text: ‘N E C/ ~ • CALIFORNIA 6427414 N t L/ 3D LA LiruKiM i* D F|b 4 2 7 4 m □□□□lb3 30C 00163 3 |~ D “p MICROWAVE TRANSISTOR SERIES NE644 FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE F I G U R E 2.7 dB at 4.0 GHz T he N E 6 4 4 is the latest series of NPN silicon transistors


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    NE644 NE644 NE64-124 NE64408) 34-6393or 2SC2272 NE64400 NE64408 NE64480 NEC Microwave Semiconductors PDF

    Untitled

    Abstract: No abstract text available
    Text: ~Sb TOSHIBA { D I S C R E T E/ OPT O} 2SC519A 2SC520A 2SC521A 9097250 TOSHIBA 1 ^1^7550 0 0 D 7 LI51 SILICON NPN TRIPLE DIFFUSED TYPE bòC DISCRETE/OPTO) 0 7 <+21 0 f'- 2 3 — 0 ? INDUSTRIAL APPLICATIONS unit in mm POWER AMPLIFIER, POWER SWITCHING APPLICATIONS.


    OCR Scan
    2SC519A 2SC520A 2SC521A 00D7L 2SC519A) PDF