SOT-23 MOSFET P-CHANNEL a1 1- mark
Abstract: No abstract text available
Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description ►► 300V breakdown voltage ►► Integrated gate-to-source resistor ►► Integrated gate-to-source Zener diode ►► Low input capacitance ►► Fast switching speeds
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LP1030D
LP1030D
DSFP-LP1030D
A031414
SOT-23 MOSFET P-CHANNEL a1 1- mark
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mark G1 SOT-23
Abstract: sot-23 MARKING CODE G1 G1 SOT23 sot-23 MARKING CODE IGs DSPD-5SOT23K1 LP1030
Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFETs. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener
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LP1030D
LP1030D
DSFP-LP1030D
NR101512
mark G1 SOT-23
sot-23 MARKING CODE G1
G1 SOT23
sot-23 MARKING CODE IGs
DSPD-5SOT23K1
LP1030
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SOT-23 MOSFET P-CHANNEL a1 1- mark
Abstract: L21e
Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFET. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener
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LP1030D
LP1030D
DSFP-LP1030D
NR011613
SOT-23 MOSFET P-CHANNEL a1 1- mark
L21e
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Untitled
Abstract: No abstract text available
Text: SMNY2Z30 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • High voltage: BVDDS=300V Min. Low gate charge: Qg=2.9nC (Typ.) Low drain-source On resistance: RDS(on)=8 Built-in protection zener diode RoHS compliant device
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SMNY2Z30
04-JUL-11
KSD-T0A075-001
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2Z30
Abstract: smny2z30
Text: SMNY2Z30 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • High voltage: BVDDS=300V Min. Low gate charge: Qg=2.9nC (Typ.) Low drain-source On resistance: RDS(on)=8Ω (Max.) Built-in protection zener diode RoHS compliant device
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SMNY2Z30
08-JUN-11
KSD-T0A075-000
2Z30
smny2z30
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cmos 555 timer
Abstract: ir2151 IR51H737 PD6061
Text: International S Rectifier Data Sheet No. PD-6.061A IR51H737 SELF-OSCILLATING HALF-BRIDGE Features Product Summary Floating channel designed for bootstrap operation Fully operational to +300V Tolerant to negative transient voltage dV/dt immune Undervoltage lockout
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OCR Scan
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IR51H737
IR51H737
5S14SP
D023n0
cmos 555 timer
ir2151
PD6061
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PDF
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Y60NK30Z
Abstract: plasma tv schematic diagram Y60NK30 STY60NK30Z
Text: STY60NK30Z N-CHANNEL 300V - 0.033Ω - 60A Max247 Zener-Protected SuperMESH Power MOSFET TYPE STY60NK30Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 300 V < 0.045 Ω 60 A 450 W TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STY60NK30Z
Max247
Y60NK30Z
plasma tv schematic diagram
Y60NK30
STY60NK30Z
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STY60NK30Z
Abstract: Y60NK30Z Y60NK30 plasma tv circuit diagram plasma tv schematic diagram Zener Diodes 300v
Text: STY60NK30Z N-CHANNEL 300V - 0.033Ω - 60A Max247 Zener-Protected SuperMESH Power MOSFET TYPE STY60NK30Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 300 V < 0.045 Ω 60 A 450 W TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STY60NK30Z
Max247
STY60NK30Z
Y60NK30Z
Y60NK30
plasma tv circuit diagram
plasma tv schematic diagram
Zener Diodes 300v
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P7NK30Z
Abstract: p7nk F7NK30Z STP7NK30Z ZENER diode 400V 5A STF7NK30Z JESD97
Text: STP7NK30Z STF7NK30Z N-CHANNEL 300V - 0.80Ω - 5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET Table 1: General Features TYPE STP7NK30Z STF7NK30Z • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID Pw 300 V 300 V < 0.9 Ω < 0.9 Ω 5A 5A 50 W
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STP7NK30Z
STF7NK30Z
O-220/TO-220FP
P7NK30Z
p7nk
F7NK30Z
STP7NK30Z
ZENER diode 400V 5A
STF7NK30Z
JESD97
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1W ZENER DIODE
Abstract: Zener Diodes 300v 12V, 1W zener diode 1W 12V ZENER DIODE zener diode 9,1v 0.5 w zener diode chip zener diode 1n4750a
Text: 1N47xxA SERIES 1W Zener Diode .034 034 0 (0.9 9) DIA. .028 (0.7) 1.0 (25.4) MIN. .205 (5.2) .165 (4.2) .107 (2.7) DIA. .080 (2.0) PRIMARY CHARACTERISTICS 1.0 (25.4) MIN. VRRM 6.2~300V VF 1.2V TJ max 150°C DO-41 Dimensions in inches and (millimeters) Mechaincal Data
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1N47xxA
DO-41
DO-41
UL94V-0
MIL-STD-202,
1V-91V
1W ZENER DIODE
Zener Diodes 300v
12V, 1W zener diode
1W 12V ZENER DIODE
zener diode 9,1v 0.5 w
zener diode chip
zener diode 1n4750a
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P7NK30Z
Abstract: ZENER diode 400V 5A
Text: STP7NK30Z STF7NK30Z N-CHANNEL 300V - 0.80Ω - 5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET Table 1: General Features TYPE STP7NK30Z STF7NK30Z • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID Pw 300 V 300 V < 0.9 Ω < 0.9 Ω 5A 5A 50 W 20 W
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STP7NK30Z
STF7NK30Z
O-220/TO-220FP
O-220
O-220FP
P7NK30Z
ZENER diode 400V 5A
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heavy duty regulator
Abstract: thyristor 15KW SL1122 100A 200V thyristor THYRISTOR 5A 300V ZENER 14,5V
Text: product tree SILICON TECHNOLOGY GAS TUBE TECHNOLOGY T.V.S AVALANCHE PLASTIC ENCAPSULATED AXIAL 500W 600W 1.5KW ' 5KW " 2 TERMINAL MEDIUM DUTY 15KW T.V.S (AVALANCHE) SURFACE MOUNT : 90V 145V ’ 230V : 260V 350V 2 TERMINAL HEAVY DUTY 10A/1 OKA 230V 260V 300V
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DO-13
0A/10KA
0A/10KA
SL1122
heavy duty regulator
thyristor 15KW
100A 200V thyristor
THYRISTOR 5A 300V
ZENER 14,5V
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VB027SP
Abstract: No abstract text available
Text: VB027SP HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C. TYPE VB027SP Vcl 300V Icl 9A Id on 130mA PRIMARY COIL VOLTAGE INTERNALLY SET COIL CURRENT LIMIT INTERNALLY SET • LOGIC LEVEL COMPATIBLE INPUT ■ DRIVING CURRENT QUASI PROPORTIONAL TO COLLECTOR CURRENT
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VB027SP
130mA
VB027SP
PowerSO-10TM
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P7NK30Z
Abstract: F7NK30Z p7nk STF7NK30Z STP7NK30Z
Text: STP7NK30Z STF7NK30Z N-CHANNEL 300V - 0.80Ω - 5A - TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID Pw STP7NK30Z STF7NK30Z 300 V 300 V < 0.9 Ω < 0.9 Ω 5A 5A 50 W 20 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.80 Ω
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STP7NK30Z
STF7NK30Z
O-220/TO-220FP
P7NK30Z
F7NK30Z
p7nk
STF7NK30Z
STP7NK30Z
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Zener Diodes 300v
Abstract: gate-source zener STL9NK30Z
Text: STL9NK30Z N-CHANNEL 300V - 0.36Ω - 9A PowerFLAT Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS on ID (1) Pw (1) STL9NK30Z 300 V < 0.4 Ω 9A 75 W • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY
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STL9NK30Z
Zener Diodes 300v
gate-source zener
STL9NK30Z
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Ignition Driver IC
Abstract: advance ignition ignition coil VB027SP
Text: VB027SP HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C. TYPE VB027SP Vcl 300V Icl 9A Id on 130mA PRIMARY COIL VOLTAGE INTERNALLY SET COIL CURRENT LIMIT INTERNALLY SET • LOGIC LEVEL COMPATIBLE INPUT ■ DRIVING CURRENT QUASI PROPORTIONAL TO COLLECTOR CURRENT
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VB027SP
130mA
VB027SP
PowerSO-10TM
Ignition Driver IC
advance ignition
ignition coil
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PDF
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STL9NK30Z
Abstract: No abstract text available
Text: STL9NK30Z N-CHANNEL 300V - 0.36Ω - 9A PowerFLAT Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS on ID (1) Pw (1) STL9NK30Z 300 V < 0.4 Ω 9A 75 W • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY
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STL9NK30Z
STL9NK30Z
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PDF
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Untitled
Abstract: No abstract text available
Text: STP12NK30Z N-CHANNEL 300V - 0.36Ω - 9A - TO-220 Zener-Protected SuperMESH Power MOSFET TYPE STP12NK30Z • ■ ■ ■ ■ ■ ■ VDSS RDS on ID (1) Pw (1) 300 V < 0.4 Ω 9A 90 W TYPICAL RDS(on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY
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STP12NK30Z
O-220
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rtv 157
Abstract: No abstract text available
Text: Data Sheet No. PD-6.057D IR51H737 SELF-OSCILLATING HALF-BRIDGE Features • Output Power MOSFETs in half-bridge configuration 300V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation ■ Accurate timing control for both Power MOSFETs
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OCR Scan
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IR51H737
IR51H737
rtv 157
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PDF
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555 TIMER IC PARAMETERS
Abstract: Zener Diodes 300v IR51HD737 IR2151 IR51H737 IC 555 Internal block diagram
Text: Data Sheet No. PD-6.057D IR51HD737 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 300V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package
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IR51HD737
IR51HD737
555 TIMER IC PARAMETERS
Zener Diodes 300v
IR2151
IR51H737
IC 555 Internal block diagram
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sa1 Zener diode
Abstract: diode 300v Scans-009514 2SD2323 igniter
Text: HITACHI 2SD2323-Silicon NPN Triple Diffused High Voltage Switching, Igniter Feature TO-220FM * B uilt-in H ig h voltage zener diode 300V • High speed sw itching Absolute M axim um Ratings (Ta = 25°C) Item S ym bo l H ating Unit C o lle cto r to base voltage
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OCR Scan
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2SD2323--
O-220FM
160fi
2SD2323
sa1 Zener diode
diode 300v
Scans-009514
2SD2323
igniter
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PDF
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kx ignition circuit diagram
Abstract: VB027SP HIGH ENERGY IGNITION CIRCUIT
Text: VB027SP HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C. TYPE VB027SP Vcl 300V Icl 9A Id on 130mA PRIMARY COIL VOLTAGE INTERNALLY SET COIL CURRENT LIMIT INTERNALLY SET • LOGIC LEVEL COMPATIBLE INPUT ■ DRIVING CURRENT QUASI PROPORTIONAL TO COLLECTOR CURRENT
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VB027SP
130mA
VB027SP
kx ignition circuit diagram
HIGH ENERGY IGNITION CIRCUIT
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L9NK30Z
Abstract: No abstract text available
Text: STL9NK30Z N-CHANNEL 300V - 0.36Ω - 9A PowerFLAT Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS on ID (1) Pw (1) STL9NK30Z 300 V < 0.4 Ω 9A 75 W • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY
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STL9NK30Z
L9NK30Z
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zener diode 54A
Abstract: Zener Diodes 300v STW54NK30Z W54NK30Z
Text: STW54NK30Z N-CHANNEL 300V - 0.052Ω - 54A TO-247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE BVDSS RDS on ID Pw STW54NK30Z 300 V < 0.060 Ω 54 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STW54NK30Z
O-247
zener diode 54A
Zener Diodes 300v
STW54NK30Z
W54NK30Z
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