82C8167
Abstract: UM82C8167 UM82C8
Text: UMC UM82C8167 S S 2 S S S 2 S 2 Î Real-Time Clock RTC eatures Microprocessor compatible (8-bit data bus) Milliseconds through month counters 56 bits of RAM with comparator to compare the real time counter to the RAM data 2 IN TERRU PT OUTPUTS with 8 possible interrupt
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UM82C8167
24-hour
UM82C8167
82C8167
82C8167
UM82C8
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Untitled
Abstract: No abstract text available
Text: RECTIFIERS SES5601C SES5602C SES5603C High Efficiency, 25A Center-Tap FEATURES • Low Forward Voltage • Fast Switching Speed • Convenient Package • High Surge Capability • Low Thermal Resistance • Mechanically Rugged TO-3 Package • Available as Positive or Negative Center-Tap
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SES5601C
SES5602C
SES5603C
SES5601C.
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Untitled
Abstract: No abstract text available
Text: TN2535 I Ljà Supertex. inc. I l L J U U 254° W Lr Low Thresh old N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^DS ON ^GS(th) l[)(ON) b v dgs (max) (max) (min) 350V 12a 1.8V 400V 12Q 1.8 V Order Number / Package TO-243AA*
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TN2535
O-243AA*
TN2540N8
TN2535ND
TN2540ND
OT-89,
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MOTOROLA POWER TRANSISTOR
Abstract: working of astable multivibrator circuit bipolar transistor tester mje13008 motorola AN1033 BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS Tektronix 7603 tester SCR DL111/D AN569
Text: by'ANI 083/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA AN1083 Basic Thermal Management of Power Semiconductors BY AL PSHAENICH MOTOROLA SEMICONDUCTOR PRODUCTS SECTOR Thermal management of power semiconductors is often overlooked by design engineers, either through oversight,
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AN1083/D
AN1083/D
MOTOROLA POWER TRANSISTOR
working of astable multivibrator circuit
bipolar transistor tester
mje13008
motorola AN1033
BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS
Tektronix 7603
tester SCR
DL111/D
AN569
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ds132
Abstract: No abstract text available
Text: SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BST86 FEATURES: PARTMARKING DETAIL - KO ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 180 UNIT V Continuous Drain Current at Ta = 25°C •d 300 mA mA Pulse Drain Current taM
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BST86
100/iA
lD300m
300fis.
70S7fl
ds132
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Untitled
Abstract: No abstract text available
Text: FMMT2369 FMMT2369A S 0 T 2 3 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2369 - 1J FM MT2369A - P5 FMMT2369R - 9R FMMT2369AR - 9A ABSOLUTE MAXIMUM RATINGS VALUE U N IT V CBO 40 V V CES 40 V V C EO 15 V V mA PARAM ETER SYMBOL
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FMMT2369
FMMT2369A
FMMT2369
MT2369A
FMMT2369R
FMMT2369AR
ELEFMMT2369
300ns
DS201
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VP0808B
Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M VQ2006J VQ2006P
Text: VPMH10 Part Numbers: VP1008L, VP0808L, VP1008M, VP0808M, VQ2006P, VQ2006J, VP1008B, VP0808B Leakage Currente Ohmic Region Vos— d r a in Tc—CASE TEMPERATURE °C SO U R C E VOLTAGE (VOLTS) ON Resistance Characteristics O Z I -60 -2 0 20 60 100 140 180
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VPMH10
300us,
VP1008L,
VP0808L,
VP1008M,
VP0808M,
VQ2006P,
VQ2006J,
VP1008B,
VP0808B
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
VQ2006J
VQ2006P
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irf840
Abstract: equivalent irf840 irf840 equivalent irf840 rf MTM3N55 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF
Text: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i I I j j CO 00 CO CO j
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IVN6100TNU
IVN6200CND
O-220
VN0401D
IVN6200CNE
T0-220
IRF533
IVN6200CNF
VN0801D
irf840
equivalent irf840
irf840 equivalent
irf840 rf
MTM3N55
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4N29-4N33
Abstract: No abstract text available
Text: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E
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4N29A,
4N32A,
E51868
0110b
74bbflSl
4N29-4N33
4N29-4N33
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Untitled
Abstract: No abstract text available
Text: b.QE ]> • Û1331S7 GG0LH34 flbO M S r iL B SEUELAB PLC T ' H - Z S SEMELAB D1014UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DM O SRFFET 20W -28V-400M H z SINGLE ENDED M ECH A N ICA L DATA Dimensions FEATURES • SIMPLIFIED AMPLIFIER DESIGN
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1331S7
GG0LH34
D1014UK
-28V-400M
300fis,
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Untitled
Abstract: No abstract text available
Text: SENELAB LTD 37E » DEC 3 i 1987 Ö1331Ö7 OÜGDlGä O • SMLB SEMELAB BDS10 BDS11 B DS12 NEW PRODUCT ^ SILICON NPN EPITAXIAL BASE TO 220 METAL MECHANICAL DATA Dimensions in mm 10-60 FEATURES rjf • HERMETIC TO 220 METAL PACKAGE it • HIGH RELIABILTY • ISOLATED OPTION
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BDS10
BDS11
220-ISO
BDS12
150TcasÂ
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Untitled
Abstract: No abstract text available
Text: SA M S UN G E L E C T R O N I C S INC b4E » • TTbHma N-CHANNEL POWER MOSFETS IRFP150/1511152/153 FEATURES • • • • • • • D Q 1 2 3 Ü 4 l b 1* ■ SMGK TO-3P Lower R d s <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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IRFP150/1511152/153
IRFP150/151/152/153
IRFP150
IRFP152
IRFP153
IRFP150/151
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SPD502
Abstract: SPD503 SPD504 SPD505 SPD506
Text: y SPD502 PRELIMINARY 4 SOLID STATE DEVICES, INC thru SPD506 :- // 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 5 AMP 200-600 VOLTS 40 nsec HYPER FAST RECTIFIER Designer’s Data Sheet FEATURES: • ■ ■
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670-SSDI
SPD502
SPD506
SPD502
SPD503
SPD504
SPD505
SPD506
300ns
500mA,
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100C
Abstract: SDR10A SDR10B SDR10D SDR10G SDR10J SDR10K SDR10M
Text: PRELIMINARY SDR10A thru SDR10M •¥: SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 10 AMPS 50-1000 VOLTS 5 iisec STANDARD RECOVERY RECTIFIER Designer’s Data Sheet FEATURES: ■ ■
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670-SSDI
SDR10A
SDR10M
SDR10B
SDR10D
SDR10G
SDR10J
SDR10K
SDR10M00ns
300ns
100C
SDR10A
SDR10M
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Untitled
Abstract: No abstract text available
Text: a SOLID STATE DEVICES INC 12E p Ja3t.b011 OQOlfiSb S | T-OS-13 SDR1A THRU SDR1N 1 AMP ULTRA FAST RECOVERY RECTIFIER 5 0 - 1 2 0 0 VOLTS CASE STYLE 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 FEATURES
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T-03-13
500ma,
250ma)
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Mosfet K 135 To3
Abstract: IRF430 432Z til 431 IRF330 IRF331 IRF332 IRF333 IRF431 IRF432
Text: 7 9 6 4 1 4 2 5 / M C M iM fî c c ü r r ' A M n n r ' T n -ñfl DE | ? ci t i 4 1 4E 0 0 D S 1 B 4 S c 98D ;N e 0 5134 D T ^ J f- N-CHANNEL POWER MOSFETS IRF430/431/432/433 FEATURES • • • • • • • • • Low RDS on at high voltage ' Improved inductive ruggedness
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cib414E
00DS1B4
IRF430/431/432/433
IRF330
IRF331
IRF332
IRF333
98D05134
IRF430
IRF431
Mosfet K 135 To3
432Z
til 431
IRF432
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IN5616
Abstract: d5040 1N5614 1N5616 1N5618 1N5620 1N5622
Text: SOLI» STATE DEVICES INC 1SE D OGG1ÛDG *1 | T ~ 01 - 13 1N5614 THRU 1N5622 » s it a li 1 AMP STANDARD RECOVERY RECTIFIER 200-1000 VOLTS 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396 CASE STYLE FEATURES
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1N5614
1N5622
1N5616
1N5618
1N5620
IN5616
IN5616
d5040
1N5616
1N5618
1N5620
1N5622
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NPN Transistor 10A 400V
Abstract: KSC2752 L 10mH TS 4142 KSC2751 400V 10A NPN transistor
Text: ¡SAMSUNG SEMICONDUCTOR INC KSC2751 " 1«4E 0 | 7^^4145 0 0 0 7 5 7 b 0 | NPN EPITAXIAL SILICON TRANSISTOR " : ; rT~33 -is HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating ' Sym bol Collector-Base Voltage
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000757b
KSC2751
50LECTORfMtTTER
00Q7Sfll
KSC2752
NPN Transistor 10A 400V
L 10mH
TS 4142
400V 10A NPN transistor
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101B
Abstract: 2N5086
Text: Transistors 2N5086 USHA INDIA LTD AMPLIFIER TRANSISTOR TO-92 * Collector-Emitter Voltage: VCEo=50V • Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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2N5086
625mW
-100/jA.
101B
2N5086
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Untitled
Abstract: No abstract text available
Text: fT 8253922 SILICON SÉNSORS INC JSILICON SENSORS INC SILICON SÉNSORS,JNC. EE5 Highway.;18;East. . : Dodgeyilie, Wisconsin 53533 ; E "TelepH c^ë; 608^35*2707^; TWX:910-28M 430 •' '• The Silicon Sensor 765-XX Optoelectronic Switch As sembly consists of a high quality Gallium Arsenide In
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910-28M
765-XX
300fiS
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IRFZ44
Abstract: IRFZ45 IRFZ44 mosfet IRFZ42 IRFZ44 MOSFETs IRFz44 n-channel MOSFET IRFZ40
Text: IRFZ44/45 IRFZ40/42 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRFZ44/45
IRFZ40/42
IRFZ44
IRFZ45
IRFZ40
IRFZ42
IRFZ44 mosfet
IRFZ44 MOSFETs
IRFz44 n-channel MOSFET
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FZT600
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT600 ISSUE 2 -FEBRUARY 1995- - m FEATURES * 2 A c o n tin u o u s c u rre n t * 140 VO LT VCE0 * G uara n te e d h FE S p e cifie d up to 1A
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OT223
FZT600
100mA
100oC
20MHz
300fis.
FZT600
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Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - AUGUST 1995 _ FEATURES vCE0 * H igh * L o w s a tu ra tio n vo lta g e CO M PLEM ENTAR Y TYPE: -B S P 1 9 PAR TM ARKING DETAIL: - BSP16 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT C o lle c to r-B a s e V o lta g e
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OT223
BSP16
-100nA
-280V
300fis.
FMMTA92
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - FEBRUARY 1996 O FEATURES * 25 Volt VCE0 * Low saturation voltage * Excellent hfE specified up to 6A pulsed . CO M PLEM EN TARY T Y P E - FZT655 PARTM ARKIN G D ETAIL - FZT755 ABSOLUTE MAXIMUM RATINGS.
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OT223
FZT655
FZT755
lc---100
-125V
-500mA,
-50mA*
-200mA*
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