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    300 WATTS POWER AMPLIFIER LAYOUT RMS Search Results

    300 WATTS POWER AMPLIFIER LAYOUT RMS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    300 WATTS POWER AMPLIFIER LAYOUT RMS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications

    Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram CGH35015S GaN amplifier GaN photo diode operational amplifier discrete schematic
    Text: From June 2007 High Frequency Electronics Copyright 2007 Summit Technical Media, LLC High Frequency Design WiMAX AMPLIFIERS High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, Cree Inc., and


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    RF-35-0300

    Abstract: 9601 mosfet 9450 transistor motorola MOSFET 935
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF Cha41 MRF9030MR1 RF-35-0300 9601 mosfet 9450 transistor motorola MOSFET 935

    on 5297 transistor

    Abstract: transistor c 5299 100B6R8CW 293D106X9035D 100B3R3BW capacitor philips motorola s 114-8 100B120GW 100B100GW "capacitor philips"
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090A MRF18090AS on 5297 transistor transistor c 5299 100B6R8CW 293D106X9035D 100B3R3BW capacitor philips motorola s 114-8 100B120GW 100B100GW "capacitor philips"

    RF Power Transistor MRF18060B MRF18060

    Abstract: SMD Transistor z6 J290 smd
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF18060B RF Power Field Effect Transistors MRF18060BR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060BS Designed for PCN and PCS base station applications with frequencies from MRF18060BSR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18060B MRF18060BR3 MRF18060BS MRF18060BSR3 GSM1930 RF Power Transistor MRF18060B MRF18060 SMD Transistor z6 J290 smd

    SMD Transistor z6

    Abstract: transistor smd z3 smd z5 transistor transistor SMD Z2 smd transistor z4 BC847 SOT-23 PACKAGE 0805 Transistor z1 transistor 6 pin SMD Z2 capacitor 100 micro F transistor z3
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060AS Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18060A MRF18060AR3 MRF18060AS MRF18060ASR3 GSM1805 SMD Transistor z6 transistor smd z3 smd z5 transistor transistor SMD Z2 smd transistor z4 BC847 SOT-23 PACKAGE 0805 Transistor z1 transistor 6 pin SMD Z2 capacitor 100 micro F transistor z3

    SMD Transistor z6

    Abstract: Transistor z1 smd transistor z4 transistor 6 pin SMD Z2 10 k .5 watts smd resistors MRF18060A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 GSM1805 SMD Transistor z6 Transistor z1 smd transistor z4 transistor 6 pin SMD Z2 10 k .5 watts smd resistors

    J299

    Abstract: J253 6 PIN SMD Z4 smd z5 transistor Transistor z1 SMD Transistor z6
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF18060B RF Power Field Effect Transistors MRF18060BR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060BSR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 GSM1930 J299 J253 6 PIN SMD Z4 smd z5 transistor Transistor z1 SMD Transistor z6

    44F3360

    Abstract: 93F2975
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9030MBR1) MRF9030MR1 MRF9030MBR1 44F3360 93F2975

    transistor J585

    Abstract: transistor smd z8 Z9 TRANSISTOR SMD transistor SMD Z2 BC847 smd
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090B MRF18090BS transistor J585 transistor smd z8 Z9 TRANSISTOR SMD transistor SMD Z2 BC847 smd

    transistor motorola 114-8

    Abstract: motorola s 114-8 Z9 TRANSISTOR SMD transistor J585 smd wb1 transistor smd wb1 motorola 114-8
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090A MRF18090AS transistor motorola 114-8 motorola s 114-8 Z9 TRANSISTOR SMD transistor J585 smd wb1 transistor smd wb1 motorola 114-8

    smd diode J476

    Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
    Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D smd diode J476 VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3

    smd transistor M3 sot23

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090B MRF18090BS smd transistor M3 sot23

    MRF9030NR1

    Abstract: marking z17 100B470JP
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030MR1 MRF9030MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9030MBR1) MRF9030NR1 MRF9030MR1 MRF9030MBR1 marking z17 100B470JP

    smd transistor marking z3

    Abstract: SMD Transistor z6 smd transistor z4 marking Z6 Capacitance smd transistor marking z1 Transistor z1 SMD marking Z4 transistor SMD Z2 SMD TRANSISTOR MARKING Z2 transistor 6 pin SMD Z2
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18060AR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF GSM1805 MRF18060AR3 MRF18060ALSR3 smd transistor marking z3 SMD Transistor z6 smd transistor z4 marking Z6 Capacitance smd transistor marking z1 Transistor z1 SMD marking Z4 transistor SMD Z2 SMD TRANSISTOR MARKING Z2 transistor 6 pin SMD Z2

    RF-35-0300

    Abstract: MRF9030LSR1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9030R1 MRF9030LSR1 RF-35-0300

    MRF9045S

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045 MRF9045S MRF9045SR1

    smd transistor marking z3

    Abstract: smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2
    Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090AR3 smd transistor marking z3 smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2

    smd transistor marking j8

    Abstract: smd transistor marking j6 transistor J585 smd transistor marking mf transistor smd z3 smd transistor marking z8
    Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090BR3 MRF18090BSR3 smd transistor marking j8 smd transistor marking j6 transistor J585 smd transistor marking mf transistor smd z3 smd transistor marking z8

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045R1 MRF9045LSR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 9, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045LR1 MRF9045LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9045LR1 MRF9045LSR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030LR1 MRF9030LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF Charact192 MRF9030LR1 MRF9030LSR1

    j633

    Abstract: J906 J1022
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030BR3 MRF18030BSR3 j633 J906 J1022

    phono preamp ceramic

    Abstract: ECG745 2 watt audio amplifier Loudspeaker 4 Ohm 4 Watt 8 watts audio amplifier layout ECG45 Philips RF PREAMP
    Text: PHILIPS E C G INC 17E D ^53^20 0003380 7 T-74-05-01 ECG745 1/2-WATT AUDIO AM PLIFIER semiconductors The ECG745 is a monolithic complementary power amplifier and preamplifier designed to deliver 1/2-Watt Into a loudspeaker with a 3.0 mV rms typical input. Gain and bandwidth are externally


    OCR Scan     		PDF ECG745 T-74-05-01 ECG745 100TYP1R 0D033T1 ECG/45 ECQ745 phono preamp ceramic 2 watt audio amplifier Loudspeaker 4 Ohm 4 Watt 8 watts audio amplifier layout ECG45 Philips RF PREAMP

    ECG745

    Abstract: VOICE RECORDER schematic
    Text: PHILIPS 17E E C G INC bbSBTSö D 1/2-WATT AUDIO AMPLIFIER The ECG745 is a monolithic complementary power amplifier and preamplifier designed to deliver 1/2-W att Into a loudspeaker w ith a 3.0 mV rms typical input. Gain and bandwidth are externally adjustable. Typical applications include portable A M -FM radios, tape


    OCR Scan     		PDF ECG745 ECG745 ECQ745 0D033T1 VOICE RECORDER schematic