300 WATTS POWER AMPLIFIER LAYOUT RMS Search Results

300 WATTS POWER AMPLIFIER LAYOUT RMS Result Highlights (5)

Part	Manufacturer	Description
MGN1S1208MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1D120603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1S1212MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0508MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1S0512MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN

300 WATTS POWER AMPLIFIER LAYOUT RMS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram CGH35015S GaN amplifier GaN photo diode operational amplifier discrete schematic Text: From June 2007 High Frequency Electronics Copyright 2007 Summit Technical Media, LLC High Frequency Design WiMAX AMPLIFIERS High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, Cree Inc., and	Original		PDF
RF-35-0300 Abstract: 9601 mosfet 9450 transistor motorola MOSFET 935 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	Cha41 MRF9030MR1 RF-35-0300 9601 mosfet 9450 transistor motorola MOSFET 935	PDF
phono preamp ceramic Abstract: ECG745 2 watt audio amplifier Loudspeaker 4 Ohm 4 Watt 8 watts audio amplifier layout ECG45 Philips RF PREAMP Text: PHILIPS E C G INC 17E D ^53^20 0003380 7 T-74-05-01 ECG745 1/2-WATT AUDIO AM PLIFIER semiconductors The ECG745 is a monolithic complementary power amplifier and preamplifier designed to deliver 1/2-Watt Into a loudspeaker with a 3.0 mV rms typical input. Gain and bandwidth are externally	OCR Scan	ECG745 T-74-05-01 ECG745 100TYP1R 0D033T1 ECG/45 ECQ745 phono preamp ceramic 2 watt audio amplifier Loudspeaker 4 Ohm 4 Watt 8 watts audio amplifier layout ECG45 Philips RF PREAMP	PDF
on 5297 transistor Abstract: transistor c 5299 100B6R8CW 293D106X9035D 100B3R3BW capacitor philips motorola s 114-8 100B120GW 100B100GW "capacitor philips" Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18090A MRF18090AS on 5297 transistor transistor c 5299 100B6R8CW 293D106X9035D 100B3R3BW capacitor philips motorola s 114-8 100B120GW 100B100GW "capacitor philips"	PDF
RF Power Transistor MRF18060B MRF18060 Abstract: SMD Transistor z6 J290 smd Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF18060B RF Power Field Effect Transistors MRF18060BR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060BS Designed for PCN and PCS base station applications with frequencies from MRF18060BSR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060B MRF18060BR3 MRF18060BS MRF18060BSR3 GSM1930 RF Power Transistor MRF18060B MRF18060 SMD Transistor z6 J290 smd	PDF
SMD Transistor z6 Abstract: transistor smd z3 smd z5 transistor transistor SMD Z2 smd transistor z4 BC847 SOT-23 PACKAGE 0805 Transistor z1 transistor 6 pin SMD Z2 capacitor 100 micro F transistor z3 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060AS Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060A MRF18060AR3 MRF18060AS MRF18060ASR3 GSM1805 SMD Transistor z6 transistor smd z3 smd z5 transistor transistor SMD Z2 smd transistor z4 BC847 SOT-23 PACKAGE 0805 Transistor z1 transistor 6 pin SMD Z2 capacitor 100 micro F transistor z3	PDF
SMD Transistor z6 Abstract: Transistor z1 smd transistor z4 transistor 6 pin SMD Z2 10 k .5 watts smd resistors MRF18060A Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3 GSM1805 SMD Transistor z6 Transistor z1 smd transistor z4 transistor 6 pin SMD Z2 10 k .5 watts smd resistors	PDF
J299 Abstract: J253 6 PIN SMD Z4 smd z5 transistor Transistor z1 SMD Transistor z6 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF18060B RF Power Field Effect Transistors MRF18060BR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060BSR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060B MRF18060BR3 MRF18060BLSR3 MRF18060BSR3 GSM1930 J299 J253 6 PIN SMD Z4 smd z5 transistor Transistor z1 SMD Transistor z6	PDF
44F3360 Abstract: 93F2975 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030MBR1) MRF9030MR1 MRF9030MBR1 44F3360 93F2975	PDF
transistor J585 Abstract: transistor smd z8 Z9 TRANSISTOR SMD transistor SMD Z2 BC847 smd Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18090B MRF18090BS transistor J585 transistor smd z8 Z9 TRANSISTOR SMD transistor SMD Z2 BC847 smd	PDF
transistor motorola 114-8 Abstract: motorola s 114-8 Z9 TRANSISTOR SMD transistor J585 smd wb1 transistor smd wb1 motorola 114-8 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18090A MRF18090AS transistor motorola 114-8 motorola s 114-8 Z9 TRANSISTOR SMD transistor J585 smd wb1 transistor smd wb1 motorola 114-8	PDF
smd diode J476 Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3 Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	DL110/D smd diode J476 VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3	PDF
smd transistor M3 sot23 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18090B MRF18090BS smd transistor M3 sot23	PDF
ECG745 Abstract: VOICE RECORDER schematic Text: PHILIPS 17E E C G INC bbSBTSö D 1/2-WATT AUDIO AMPLIFIER The ECG745 is a monolithic complementary power amplifier and preamplifier designed to deliver 1/2-W att Into a loudspeaker w ith a 3.0 mV rms typical input. Gain and bandwidth are externally adjustable. Typical applications include portable A M -FM radios, tape	OCR Scan	ECG745 ECG745 ECQ745 0D033T1 VOICE RECORDER schematic	PDF

smd transistor marking z3 Abstract: SMD Transistor z6 smd transistor z4 marking Z6 Capacitance smd transistor marking z1 Transistor z1 SMD marking Z4 transistor SMD Z2 SMD TRANSISTOR MARKING Z2 transistor 6 pin SMD Z2 Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18060AR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	GSM1805 MRF18060AR3 MRF18060ALSR3 smd transistor marking z3 SMD Transistor z6 smd transistor z4 marking Z6 Capacitance smd transistor marking z1 Transistor z1 SMD marking Z4 transistor SMD Z2 SMD TRANSISTOR MARKING Z2 transistor 6 pin SMD Z2	PDF
SMD Transistor z6 Abstract: transistor SMD Z2 Transistor smd Z3 J344 smd transistor marking z3 transistor 6 pin SMD Z2 MOSFET marking Z5 transistor Z6 SMD z6 SMD TRANSISTOR MARKING Z2 Text: Freescale Semiconductor Technical Data Rev. 6, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	GSM1930 MRF18060BLSR3 SMD Transistor z6 transistor SMD Z2 Transistor smd Z3 J344 smd transistor marking z3 transistor 6 pin SMD Z2 MOSFET marking Z5 transistor Z6 SMD z6 SMD TRANSISTOR MARKING Z2	PDF
RF-35-0300 Abstract: MRF9030LSR1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030R1 MRF9030LSR1 RF-35-0300	PDF
MRF9045S Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9045 MRF9045S MRF9045SR1	PDF
smd transistor marking z3 Abstract: smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2 Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18090AR3 smd transistor marking z3 smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2	PDF
smd transistor marking j8 Abstract: smd transistor marking j6 transistor J585 smd transistor marking mf transistor smd z3 smd transistor marking z8 Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18090BR3 MRF18090BSR3 smd transistor marking j8 smd transistor marking j6 transistor J585 smd transistor marking mf transistor smd z3 smd transistor marking z8	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9045R1 MRF9045LSR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 9, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045LR1 MRF9045LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	MRF9045LR1 MRF9045LSR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030LR1 MRF9030LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	Charact192 MRF9030LR1 MRF9030LSR1	PDF
j633 Abstract: J906 J1022 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18030BR3 MRF18030BSR3 j633 J906 J1022	PDF

300 WATTS POWER AMPLIFIER LAYOUT RMS Search Results

300 WATTS POWER AMPLIFIER LAYOUT RMS Result Highlights (5)

300 WATTS POWER AMPLIFIER LAYOUT RMS Datasheets Context Search

High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications

RF-35-0300

phono preamp ceramic

on 5297 transistor

RF Power Transistor MRF18060B MRF18060

SMD Transistor z6

SMD Transistor z6

J299

44F3360

transistor J585

transistor motorola 114-8

smd diode J476

smd transistor M3 sot23

ECG745

smd transistor marking z3

SMD Transistor z6

RF-35-0300

MRF9045S

smd transistor marking z3

smd transistor marking j8

Untitled

Untitled

Untitled

j633