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    300 VOLT 5 AMPERE TRANSISTOR Search Results

    300 VOLT 5 AMPERE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    300 VOLT 5 AMPERE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBT3904 datasheet

    Abstract: MBT3904 1 microfarad capacitor SOT23 MBT3904 MBT35200 MBT35200MT1 MRA4003T3 NCP100 TL431 TLV431
    Text: AND8028/D Precision Sub-One Volt 1.7 Ampere Output LDO Jason Hansen ON Semiconductor http://onsemi.com APPLICATION NOTE INTRODUCTION Figure 1 for the circuit schematic. Since a PNP transistor is implemented, the signal from the precision reference needs to be inverted. A small signal NPN, Q2, is used for this


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    PDF AND8028/D NCP100 r14525 MBT3904 datasheet MBT3904 1 microfarad capacitor SOT23 MBT3904 MBT35200 MBT35200MT1 MRA4003T3 NCP100 TL431 TLV431

    mj150* darlington

    Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
    Text: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35


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    PDF 2N3055A, MJ15015, MJ15016 2N3055, MJ2955 2N3442 2N3771, 2N3772 2N3773* 2N6609 mj150* darlington BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp

    fusetron class k9

    Abstract: No abstract text available
    Text: Pg206 to 230 /12-25-01 1/3/02 3:42 PM Page 206 Fuse Technology Circuit Protection Electrical distribution systems are often quite complicated. They cannot be absolutely fail-safe. Circuits are subject to destructive overcurrents. Harsh environments, general deterioration, accidental damage, damage from natural causes, excessive expansion, and/or overloading of the electrical distribution system are


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    PDF Pg206 fusetron class k9

    international rectifier GTO

    Abstract: SCR 700v 30a LA50-P L15S1000 SCR 1000V 1000A LA055URD33TTI2250 LA100P DC Fuse 1000V 800A LA70QS80-22F LA60Q15-2
    Text: Special Purpose Fuses Semiconductor Fuses 150 – 1300 VAC • Very Fast Acting • 1 – 6000 Amperes Semiconductor Fuses Littelfuse Semiconductor fuses are very fast acting fuses designed specifically for the protection of diodes, thyristors, triacs, and other


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    PDF LA130URD70TTI LA120URD70TTI LA130URD71TTI LA120URD71TTI LA130URD72TTI LA120URD72TTI LA130URD73TTI LA120URD73TTI LA110URD73TTI LA090URD73TTI international rectifier GTO SCR 700v 30a LA50-P L15S1000 SCR 1000V 1000A LA055URD33TTI2250 LA100P DC Fuse 1000V 800A LA70QS80-22F LA60Q15-2

    Untitled

    Abstract: No abstract text available
    Text: l c/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MJ10042 MJ10045 MJ10048 25, GO, and 100 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 25 KVA ENERGY MANAGEMENT SERIES SWITCHMODE DARLINGTON TRANSISTORS


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    PDF MJ10042 MJ10045 MJ10048

    mcl d01 94V0

    Abstract: mcl d01 94vo lcd nec 2501 LD 229 TY 8016 thyristor LNNB001 mcl d01 display mcl d01 94VO 4300 MCL D01 94VO LCD DISPLAY FREE Bucket Elevator Design NH3 GL-GG
    Text: POWR-GARD PRODUCTS CATALOG Littelfuse The World’s Leading Provider of Circuit Protection Solutions An Exceptional Portfolio Littelfuse is committed to providing every one of our customers with the right solutions to meet all of your circuit protection needs. Makes All the Difference


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    PDF PF101-11 mcl d01 94V0 mcl d01 94vo lcd nec 2501 LD 229 TY 8016 thyristor LNNB001 mcl d01 display mcl d01 94VO 4300 MCL D01 94VO LCD DISPLAY FREE Bucket Elevator Design NH3 GL-GG

    7BR25SA120

    Abstract: design drive circuit of IGBT IR2112 application note IGBT cross reference IRGP30B120KD-E AN-983a IR igbt gate driver ic IR2112 equivalent IR2112 an-990
    Text: “Positive Only” Gate Drive IGBTs Created by Cres Minimization By Richard Francis, Peter Wood and Arnold Alderman, International Rectifier Corporation As presented at PCIM 2001 +Vbus Previously, the general practice is to provide Insulated Gate Bipolar Transistors IGBTs with


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    PDF AN983A, AN990, 7BR25SA120 design drive circuit of IGBT IR2112 application note IGBT cross reference IRGP30B120KD-E AN-983a IR igbt gate driver ic IR2112 equivalent IR2112 an-990

    KR324515

    Abstract: pm300hha120 300 volt 5 ampere transistor 200 Ampere transistor 200 Ampere power transistor CM100DY-24H PM300hH
    Text: Power Tranalstor Module Numbering System Powtnx, Ine., 300 m m Str— t, Youngwood, ftw w yfHMHa Um 7-1t00 413 MO-7273 P ow n x, Europe, S.A. 438Aw nu• Q. Duranti, BP107, 73009 L* Mam, tou x» (43) 41.14.14 Digit 1: Digit 3: J - FETM OD M OSFET Modules


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    PDF 7-1t00 MO-7273 438Aw BP107, CM100DY-24H PM300HHA120 KR324515 300 volt 5 ampere transistor 200 Ampere transistor 200 Ampere power transistor PM300hH

    K042

    Abstract: D-07 KD421A20
    Text: m üEREX POÜJEREX INC TflD ] • 72T4LS1 QOOESOl Powerex, Inc., Hitlis Street, Youngwood, Pennsylvania 1S697 412) 925-7272 Ö KD421A20 Tentative Fast Switching Dual Darlington Transistor Module 200 Amperes/125 Volts Description - ; Powerex'Fast Switching Dual Darlington


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    PDF KD421A20 Amperes/125 KD421A20 K042 D-07

    Darlington 30A

    Abstract: KD221K0310 kd2245
    Text: 7294621 POWEREX INC 3 0 Amperes 4 5 0 /1 0 0 0 Volts ^2 D E Í 7 S T M b 2 1 D G D m i ñ 0 |~~ q \ T-33-35 Dual Darlington TRANSISTOR Modules Dim A B C D E F G H K M Inches 3.700 Max 3.150+.020 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 Millimeters 94 Max


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    PDF T-33-35 M5-10 KD224S0310 000CHE1 KD22450310 KD22450310 Darlington 30A KD221K0310 kd2245

    RBSOA

    Abstract: transistor crossover
    Text: SWITCHING TRANSISTOR FUNDAMENTALS The advances in the technology of bipolar switching power transistors have resulted in devices which com­ bine high-voltage capability, speed, and ruggedness previously thought impossible to obtain in a single transistor. As an example, General Semiconductor


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    PDF 2N6925A RBSOA transistor crossover

    westinghouse DIODES

    Abstract: WESTINGHOUSE dc motor 300 volt 5 ampere transistor Westinghouse diode westinghouse ac motor kd7245 KD724502 WESTINGHOUSE transistor westinghouse semiconductor
    Text: 7294621 POWEREX INC PE | 7BT4b5:L □ 0 □ 0 •=]15 4 Dual Darlington TRANSISTOR Modules Dim A B C D E F Q H J Inches. 2.76 1.06 2.36 ±0.01 2.17 1.02 .59 .43 .181 .315 |~~5 _ qf T-33-35 20 Amperes 450 Volts Millimeters 70 27 60±0.3 5.5 26 15 11 4.6 8


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    PDF T-33-35 KD72450210 D72450210 KD72450210 westinghouse DIODES WESTINGHOUSE dc motor 300 volt 5 ampere transistor Westinghouse diode westinghouse ac motor kd7245 KD724502 WESTINGHOUSE transistor westinghouse semiconductor

    Westinghouse diode

    Abstract: KS8245A1 WESTINGHOUSE dc motor Westinghouse power diode S-8245 WESTINGHOUSE ELECTRIC westinghouse ac motor ks82
    Text: r 7294621 PQWEREX INC dT | 75^51 DOOgflflT 7 B ~ — & Single Darlington TRANSISTOR Module Dim A B C D E F G H J K Inches 1.54 Max 1.27 * 0.008 .77 .65 .94 .276 .146 .165 .945 .126 T-33-35 15 Amperes 450 Volts Millimeters 39 Max 32.2 * 0.2 19.5 16.6 24 Max


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    PDF T-33-35 KS8245A110 75T4b21 KS8245A110 Westinghouse diode KS8245A1 WESTINGHOUSE dc motor Westinghouse power diode S-8245 WESTINGHOUSE ELECTRIC westinghouse ac motor ks82

    Untitled

    Abstract: No abstract text available
    Text: POUETREX 7294621 m N INC ejß]> ]> POWEREX E H m INC 7 2 ^ 2 1 0002431 3 98 D 02431 E X KEE525B0 Powerex, Inc., Hlllls Street, Yaungwood, Pennsylvania 15697 412 925-7272 In te g r a l B a k e r C la iìip Six-Darlington Transistor Module 8 Amperes/300 Volts


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    PDF KEE525B0 Amperes/300 KEE525B0

    transistor k 4213 m

    Abstract: transistor k 4213 1S697 KT521203 KTS21203
    Text: 7294621 POWEREX IN C Tfl De | 7B cm b 2 1 mMEREX 3 j~ ‘ D ' T *i 3 3 -J t5 ; KT521203 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 ) Split-Dual Darlington Transistor Module 30 Amperes/1200 Volts Description Powerex.Split-Dual Darlington Transistor


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    PDF 7Bcmb21 KT521203 Amperes/1200 KT521203 D00S3flM transistor k 4213 m transistor k 4213 1S697 KTS21203

    2N6543

    Abstract: 2N6542 S200
    Text: ÆlMOSPEC SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS NPN These devices are designed for high-voltage,high-speed,power 2N6542 2N6543 switching inductive circuits where fall time is critical.they are particu­ larly,suited for 115 and 220 volt line operated SWITCHMODE appli­


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    PDF 2N6542 2N6543 2N6542, S200

    Westinghouse diode

    Abstract: kd32 1B2 diode
    Text: 7294621 POWEREX INC 150 Amperes 4 5 0 /1 0 0 0 Volts b2 DE I 7E14tHl 0 0 0 D C134 Û f _ 0 T-33-35 Dual Darlington TRANSISTOR Modules Dim A B C D E F G H J K L M N P Inches 3.740 Max 3.150+ .010 .90 Dim A B C D E F G H J K L M N P Q R S T U Inches 4.250 Max


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    PDF 7E14tHl T-33-35 KD324S1510 KD421K1610 KD32451510 KD421K1510 KD32451510 Westinghouse diode kd32 1B2 diode

    power transistor motor control

    Abstract: 1S697 D66GV D66GV5 D66GV6 D66GV7 l 7251 ICM75
    Text: 7294621 POWEREX ¡NO O p W E R E HP, tE ^ a ^ a i Fo“' OOQ2177 u X o Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 1S697 412 925-7272 e -iT 7 ~ - 3i L : Fast Switching Single Darlington Transistor Module 50 Amperes 500-600-700 Volts Description


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    PDF D66GV 1S697 D66GV power transistor motor control 1S697 D66GV5 D66GV6 D66GV7 l 7251 ICM75

    transistor k 4213 m

    Abstract: transistor BJ 102 transistor k 4213 TRANSISTOR BJ 101 b206a KT-52
    Text: 72 94621 POWEREX INC Tfl » F | 7 B cm b 2 1 m/vatex 3 | " D 'Ti S3-J5' KT521203 Powerex, Inc., Hlllts S treet, Yourtgwood, Pennsylvania 15697 412 925-7272 Split-Dual Darlington Transistor Module 30 Am peres/1200 Volts Description Powerex.Spiit-Dual Darlington Transistor


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    PDF KT521203 peres/1200 s/1200 transistor k 4213 m transistor BJ 102 transistor k 4213 TRANSISTOR BJ 101 b206a KT-52

    transistor z5t

    Abstract: 1S697 KT521K03 300 volt 5 ampere transistor a 31 transistor k 4213 TI-125K 1251C
    Text: 7 2 9 4 6 2 m N 1' P O W ER E X I NC T f l D e | 7 2 ^ 5 1 C O D E 3 7 7 E X _ E R Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 ) 1 | “ T ^ 3 3 ~ 3 5 “ d KT521K03 S p U t - D U d l D a r lin g t O F I Transistor Module


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    PDF DO02377 KT521K03 Amperes/1000 KT521K03 345710s 3457i0 transistor z5t 1S697 300 volt 5 ampere transistor a 31 transistor k 4213 TI-125K 1251C

    K723

    Abstract: KT234520 transistor 236 bipolar power transistor vce 600 volt
    Text: 7294621 POWEREX INC I O H E R E _ D E I 7 2 i MbSI 0D0SD3b fl D KT234520 K Powemi, Inc., Hlllla Street, ibungwood, Pennsylvania 15697 412 925-7272 Split-Dual Bipolar Transistor Module 200 Amperes/600 Volts Description Powerex Split-Dual Bipolar Transistor


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    PDF 7-33-2T? KT234S20 KT234520 Amperes/600 15Dia. K723 transistor 236 bipolar power transistor vce 600 volt

    CNY33

    Abstract: CNY35 D29E2 D45H8 I20VAC 86Vac
    Text: SOLID STATE 01 Optoelectronic Specifications » e I bü TSDÖI 001'ifl3ñ S T -*V < -5 3 Photon Coupled Isolator CNY33 Ga As Infrared Emitting Diode & NPN Silicon High Voltage Photo-Transistor The GE Solid State CNY33 is a gallium arsenide, infrared emitting


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    PDF T-Wl-53 CNY33 CNY33 CNY35 CIMY35 I20VAC D45H8 2N5308-D45H8 CNY35 D29E2 D45H8 I20VAC 86Vac

    2N6543

    Abstract: 2N6542 S200 LB 122 NPN TRANSISTOR
    Text: SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS These devices are designed for high-voltage,high-speed,power NPN 2N6542 2N6543 switching inductive circuits where fall time is critical.they are particu­ larly,suited for 115 and 220 volt line operated SWITCHMODE appli­


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    PDF 2N6542 2N6543 2N6542, S200 LB 122 NPN TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: 7294621 m POWEREX u a m INC “ DEI 7514^51 DD0SD3b x Powerex, Inc., Hlllls Street, ibungwood, Pennsylvania 15697 412 925-7272 fl D "T ^ S ^ Z y KT234520 Split-Dual Bipolar Transistor Module 200 Amperes/600 Volts Description o u t liv e m m ìn g Powerex Split-Dual Bipolar Transistor


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    PDF KT234520 Amperes/600