Sumitomo 1295SA
Abstract: 1295SA 283E03 S2125 S1125 P125D
Text: AMMC-6442 37 - 40 GHz 1W Power Amplifier Data Sheet Description Features The AMMC-6442 is a 1W power amplifier MMIC die for use in transmitters that operate at frequencies between 37GHz and 40GHz. In the operational band, it provides typical 30 dBm of output power P-1dB and 23dB of
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AMMC-6442
AMMC-6442
37GHz
40GHz.
37dBm
18dBm
30dBm
37dBm
1295SA
Sumitomo 1295SA
283E03
S2125
S1125
P125D
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Sumitomo 1295SA
Abstract: 1295SA sumitomo silver epoxy HBM W10 TRAY THERMO A004R GaAs MMIC ESD, Die Attach and Bonding Guidelines
Text: AMMC-6442 37 - 40 GHz 1W Power Amplifier Data Sheet Description Features The AMMC-6442 is a 1W power amplifier MMIC die for use in transmitters that operate at frequencies between 37GHz and 40GHz. In the operational band, it provides typical 30 dBm of output power P-1dB and 23dB of
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AMMC-6442
AMMC-6442
37GHz
40GHz.
37dBm
18dBm
30dBm
37dBm
18dBm
AV02-2237EN
Sumitomo 1295SA
1295SA
sumitomo silver epoxy
HBM W10
TRAY THERMO
A004R
GaAs MMIC ESD, Die Attach and Bonding Guidelines
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203263
Abstract: No abstract text available
Text: AMMC-6550 15 to 50 GHz Image Rejection Mixer Data Sheet Description Features AMMC-6550 is an image rejection mixer IRM , which can also be used as an IQ mixer. The AMMC-6550 utilizes two distributed passive FET mixers and a Lange coupler realized in Avago Technologies unique
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AMMC-6550
AMMC-6550
90-degree
AMMC-6550-W10
AMMC-6550-W50
AV01-0394EN
203263
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CHR2297
Abstract: if6g
Text: CHR2297 RoHS COMPLIANT 36-44GHz Multifunction Down-Converter GaAs Monolithic Microwave IC Description The CHR2297 is a multifunction chip MFC which integrates a LO buffer amplifier, an IF amplifier and a single cold FET mixer. It is usable for down-conversion. It is designed
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CHR2297
36-44GHz
CHR2297
DSCHR22970204
if6g
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IF2G
Abstract: GaAs FET HEMT Chips CHR2297
Text: CHR2297 RoHS COMPLIANT 36-44GHz Multifunction MFC Down-Converter GaAs Monolithic Microwave IC Description The CHR2297 is a multifunction chip (MFC) which integrates a LO buffer amplifier, an IF amplifier and a single cold FET mixer. It is usable for down-conversion. It is designed for a
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CHR2297
36-44GHz
CHR2297
DSCHR22977187
IF2G
GaAs FET HEMT Chips
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Untitled
Abstract: No abstract text available
Text: SDA-7000 SDA-7000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 2.40mmx1.21mmx0.102mm Product Description Features RFMD’s SDA-7000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high frequency commercial, military, and space applications. They are ideal for wideband amplifier gain blocks, modulators,
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SDA-7000
40mmx1
21mmx0
102mm
SDA-7000
40GHz
200mA
40GHz,
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Untitled
Abstract: No abstract text available
Text: CHR2297 RoHS COMPLIANT 36-44GHz Multifunction Down-Converter GaAs Monolithic Microwave IC Description The CHR2297 is a multifunction chip MFC which integrates a LO buffer amplifier, an IF amplifier and a single cold FET mixer. It is usable for down-conversion. It is designed
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CHR2297
36-44GHz
CHR2297
DSCHR22970204
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CC45T47K240G5C2
Abstract: Sumitomo 1295SA SA1515BX101M2HX5 SK04B102M11A6 GRP155F51A474ZDO2B PCB Rogers RO4003 substrate AVX0402YG104ZAT2A HIGH GAIN FET 1295SA Presidio Components CAP
Text: AMMC-5024 30KHz–40 GHz TWA Operational Guide Application Note 5359 Introduction Device Description This application note is an operational guide for Avago’s AMMC-5024 Traveling Wave Amplifier. The AMMC-5024 is a broadband PHEMT GaAs MMIC designed for medium output power 22.5dBm P1dB
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AMMC-5024
30KHz
AMMC-5024
40GHz
AV02-0704EN
CC45T47K240G5C2
Sumitomo 1295SA
SA1515BX101M2HX5
SK04B102M11A6
GRP155F51A474ZDO2B
PCB Rogers RO4003 substrate
AVX0402YG104ZAT2A
HIGH GAIN FET
1295SA
Presidio Components CAP
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AMMP-6441
Abstract: A004R
Text: AMMP-6441 36 - 40 GHz, 0.4W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6441 MMIC is a 0.4W power amplifier in a surface mount package designed for use in transmitters that operate at frequencies between 36GHz and 40GHz. In the operational band, it provides 26 dBm of output power
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AMMP-6441
AMMP-6441
36GHz
40GHz.
AV02-1908EN
A004R
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if6g
Abstract: CHR2297 pHEMT 6GHz
Text: CHR2297 RoHS COMPLIANT 36-44GHz Multifunction Down-Converter GaAs Monolithic Microwave IC Description The CHR2297 is a multifunction chip MFC which integrates a LO buffer amplifier, an IF amplifier and a single cold FET mixer. It is usable for down-conversion. It is designed
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CHR2297
36-44GHz
CHR2297
DSCHR22977187
if6g
pHEMT 6GHz
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SDA-7000SB
Abstract: JESD22-A114 broadband bias tee SDA-7000 30- 40Ghz FET
Text: SDA-7000 SDA-7000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 2.40mmx1.21mmx0.102mm Product Description Features RFMD’s SDA-7000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high frequency commercial, military, and space applications. They are ideal for wideband amplifier gain blocks, modulators,
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SDA-7000
40mmx1
21mmx0
102mm
SDA-7000
40GHz
200mA
40GHz,
SDA-7000SB
JESD22-A114
broadband bias tee
30- 40Ghz FET
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Untitled
Abstract: No abstract text available
Text: Data Sheet GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz to 50 GHz HMC1126 FEATURES FUNCTIONAL BLOCK DIAGRAM Output power for 1 dB compression P1dB : 17.5 dB typical Saturated output power (PSAT): 21 dBm typical Gain: 11 dB typical Output third-order intercept (IP3): 28 dBm typical
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HMC1126
HMC1126
4-09-2015-A
D13083-0-5/15
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Untitled
Abstract: No abstract text available
Text: GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz HMC1127 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM VDD 2 HMC1127 3 RFIN RFOUT 1 5 VGG1 4 VGG2 13085-001 Output power for 1 dB compression P1dB : 12.5 dBm typical at 8 GHz to 30 GHz Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to
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HMC1127
HMC112085-028
100pF
3-19-2015-A
D13085-0-5/15
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AMMC-6550
Abstract: No abstract text available
Text: AMMC-6550 15 to 50 GHz Image Rejection Mixer Data Sheet Chip Size: 1600 x 1300 mm 63 x 51 mils Chip Size Tolerance: ± 10 mm (± 0.4 mils) Chip Thickness: 100 ± 10 mm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 mm (4 x 4 ± 0.4 mils) Description Features
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AMMC-6550
AMMC-6550
AMMC-6550-W10
AMMC-6550-W50
AV01-0394EN
AV02-1285EN
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RF42
Abstract: 15-50G
Text: AMMC-6550 15 to 50 GHz Image Rejection Mixer Data Sheet Chip Size: 1600 x 1300 m 63 x 51 mils Chip Size Tolerance: ± 10 m (± 0.4 mils) Chip Thickness: 100 ± 10 m (4 ± 0.4 mils) Pad Dimensions: 100 x 100 m (4 x 4 ± 0.4 mils) Description Features
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AMMC-6550
AMMC-6550
90-degree
100pF
AMMC-6550-W10
AMMC-6550-W50
AV01-0394EN
RF42
15-50G
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AMMC-6550
Abstract: mixers circuit using 90 degree hybrid satellite 40Ghz fet
Text: AMMC-6550 15 to 50 GHz Image Rejection Mixer Data Sheet Chip Size: 1600 x 1300 mm 63 x 51 mils Chip Size Tolerance: ± 10 mm (± 0.4 mils) Chip Thickness: 100 ± 10 mm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 mm (4 x 4 ± 0.4 mils) Description Features
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AMMC-6550
AMMC-6550
AMMC-6550-W10
AMMC-6550-W50
AV01-0394EN
AV02-1285EN
mixers circuit using 90 degree hybrid
satellite 40Ghz fet
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Untitled
Abstract: No abstract text available
Text: CHR3394-QEG RoHS COMPLIANT 37-40GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD leadless package Description The CHR3394-QEG is a multifunction monolithic receiver, which integrates a balanced cold FET mixer, a LO chain with buffers associated to a time two multiplier,
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CHR3394-QEG
37-40GHz
CHR3394-QEG
R3394
37-40GHz
15dBc
DSCHR3394-QEG1192
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AN0017
Abstract: MO-220 38 C 41
Text: CHR3394-QEG RoHS COMPLIANT 37-40GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD leadless package Description The CHR3394-QEG is a multifunction monolithic receiver, which integrates a balanced cold FET mixer, a LO chain with buffers associated to a time two multiplier,
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CHR3394-QEG
37-40GHz
CHR3394-QEG
R3394
37-40GHz
15dBc
DSCHR3394-QEG0350
AN0017
MO-220
38 C 41
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AMMP-6442
Abstract: 537e P125D S1125
Text: AMMP-6442 37- 40 GHz, 1W Linear Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6442 MMIC is a 1W linear power amplifier in a surface mount package designed for use in transmitters that operate at frequencies between 37GHz and 40GHz. In the operational band, it provides 30dBm of
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AMMP-6442
AMMP-6442
37GHz
40GHz.
30dBm
35dBm
18dBm
AV02-2399EN
537e
P125D
S1125
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Untitled
Abstract: No abstract text available
Text: TGA4508 Ka Band Low Noise Amplifier Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3 V, Id = 40 mA Ga in & R e tu rn L o ss d B 40 30 Gain 20 Typical Frequency Range: 30 - 42 GHz 21 dB Nominal Gain
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TGA4508
0007-inch
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TGA4508
Abstract: No abstract text available
Text: TGA4508 Ka Band Low Noise Amplifier Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3 V, Id = 40 mA Ga in & R e tu rn L o ss d B 40 30 Gain 20 Typical Frequency Range: 30 - 42 GHz 21 dB Nominal Gain
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TGA4508
0007-inch
TGA4508
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datasheet shf 807
Abstract: No abstract text available
Text: SHF Communication Technologies AG Wilhelm-von-Siemens-Str. 23D • 12277 Berlin • Germany Phone +49 30 / 772 05 10 • Fax +49 30 / 753 10 78 E-Mail: sales@shf.de • Web: http://www.shf.de Datasheet SHF 807 Linear Broadband Amplifier SHF reserves the right to change specifications and design without notice – SHF 807 - V005 – August, 2013
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QAM-16
datasheet shf 807
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Untitled
Abstract: No abstract text available
Text: PPH15X_10 TECHNOLOGY The new UMS 150nm GaAs power pHEMT process UMS is now pleased to extend its foundry offer with the introduction of a new 150nm GaAs Power pHEMT process. This process is optimised for wideband high power amplification up to 40GHz with a typical Ft of 65GHz
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PPH15X
150nm
150nm
40GHz
65GHz
750mW/mm
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super bonder 325
Abstract: ls40f
Text: EC1840 4 0 G H z LOW N O I SE FET G a A s F I E L D E F F E C T T R A N S I S T O R NOT FOR NEW DESIGNS. USE EC2827 REPLACEMENT. FEATURES • Low noise figure : N F min = 1.5dB typ. at 18GHz N F min. = 3dB (typ.) at 40GHz • High associated gain : G a = 11.5dB (typ.) at 18GHz
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EC1840
EC2827
18GHz
40GHz
40GHz.
25nmn
EC1840-99A/00
super bonder 325
ls40f
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