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    30 W RF POWER TRANSISTOR NPN Search Results

    30 W RF POWER TRANSISTOR NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    30 W RF POWER TRANSISTOR NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD135

    Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
    Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics


    Original     		PDF MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727

    NESG260234

    Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG260234 NESG260234-AZ NESG260234-T1 NESG260234 LLQ2021 NESG260234-T1 NESG260234-T1-AZ

    1005 Ic Data

    Abstract: NESG260234 IC MARKING 1005 1005 TRANSISTOR
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG260234 NESG260234 NESG260234-AZ NESG260234-T1 NESG260234-T1-AZ PU10547EJ02V0DS LLQ2021 1005 Ic Data IC MARKING 1005 1005 TRANSISTOR

    nec 2501

    Abstract: 2501 NEC ic nec 2501 NESG260234
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification PO = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG260234 NESG260234 NESG260234-AZ NESG260234-T1 NESG260234-T1-AZ nec 2501 2501 NEC ic nec 2501

    NESG260234

    Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG260234 NESG260234-AZ NESG260234-T1 NESG260234 LLQ2021 NESG260234-T1 NESG260234-T1-AZ

    CASE-211-11 MRF421

    Abstract: adc 809 MRF421 equivalent ferroxcube ferrite beads mallory 150 series 1N4997 MRF421
    Text: Order this document by MRF421/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF421 Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP


    Original     		PDF MRF421/D MRF421 CASE-211-11 MRF421 adc 809 MRF421 equivalent ferroxcube ferrite beads mallory 150 series 1N4997 MRF421

    adc 809

    Abstract: ferroxcube ferrite beads CASE-211-11 MRF422 ferroxcube data sheet for ferrite beads mallory 150 series 1N4997 MRF422
    Text: Order this document by MRF422/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF422 Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W PEP


    Original     		PDF MRF422/D MRF422 adc 809 ferroxcube ferrite beads CASE-211-11 MRF422 ferroxcube data sheet for ferrite beads mallory 150 series 1N4997 MRF422

    Motorola transistors MRF455

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • 60 W, 30 MHz RF POWER TRANSISTOR NPN SILICON Specified 12.5 Volt, 30 MHz Characteristics —


    OCR Scan     		PDF iF/15 VK200-20/4B, 56-590-65/3B MRF455 Motorola transistors MRF455

    MRF449

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 30 W - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . . designed fo r power am plifier application in industrial, com ­ mercial and amateur radio equipment to 30 MHz. •


    OCR Scan     		PDF

    MRF454 motorola

    Abstract: ferroxcube 56-590-65 56590653B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF454 NPN Silicon RF Power TVansistor . . . designed for power am plifier applications in industrial, commercial and am ateur radio equipment to 30 MHz. • 80 W, 30 MHz RF POWER TRANSISTOR NPN SILICON Specified 12.5 Volt, 30 MHz Characteristics —


    OCR Scan     		PDF MRF454 MRF454 nF/15 VK200-20/4B, 56-590-65/3B MRF454 motorola ferroxcube 56-590-65 56590653B

    MRF422

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF422 Designed primarily for applications as a high -po w er linear am plifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W PEP


    OCR Scan     		PDF MRF422 56-590-65/3B MRF422

    inductor vk200

    Abstract: VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer
    Text: i MRF238 MOTOROLA Advance Information 30 W — 160 MHz The RF Line RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed for 13.6 Volt VHF large»signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.


    OCR Scan     		PDF MRF238 inductor vk200 VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer

    MRF421 equivalent

    Abstract: mrf421
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF421 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP


    OCR Scan     		PDF MRF421 THERMAL2-344 MRF421 MRF421 equivalent

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF422 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W PEP


    OCR Scan     		PDF MRF422 MRF422

    MRF422

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF422 Designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W PEP Minimum Gain = 10 dB


    OCR Scan     		PDF MRF422 MRF422

    MRF421 equivalent

    Abstract: mrf421
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP Minimum Gain = 10 dB


    OCR Scan     		PDF MRF421 MRF421 equivalent

    2443 MOTOROLA transistor

    Abstract: High-Power NPN Silicon Power Transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP Minimum Gain = 10 dB


    OCR Scan     		PDF ACTERISTI/16 56-590-65/3B MRF421 2443 MOTOROLA transistor High-Power NPN Silicon Power Transistor

    MRF464

    Abstract: micrometals T37 toroid micrometals T37 High-Power NPN Silicon Power Transistor mobile rf power amplifier transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF464 NPN Silicon RF Power Transistor . . . designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment. • 80 W PEP , 30 MHz


    OCR Scan     		PDF MRF464 MRF464 micrometals T37 toroid micrometals T37 High-Power NPN Silicon Power Transistor mobile rf power amplifier transistor

    MRF422

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W PEP Minimum Gain = 10 dB


    OCR Scan     		PDF MRF422 150WPEP

    CQ 20.000

    Abstract: MRF421 equivalent MRF421 1N4997
    Text: M í ir l\ z i MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP


    OCR Scan     		PDF MRF421 150mA CQ 20.000 MRF421 equivalent MRF421 1N4997

    allen bradley CB series

    Abstract: "class AB Linear" hf CB allen bradley
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF426 . . . designed for high gain driver and output linear am plifier stages in 1.5 to 30 MHz HF/SSB equipment. • • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP


    OCR Scan     		PDF MRF426 MRF426 allen bradley CB series "class AB Linear" hf CB allen bradley

    MRF-393

    Abstract: MRF393 equivalent transistor rf "30 mhz" AN 240 Motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF393 The RF Line NPN Silicon Push-Pull RF Power Transistor . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. 100 W, 30 to 500 MHz CONTROLLED ‘Q”


    OCR Scan     		PDF MRF393 MRF393 MRF-393 equivalent transistor rf "30 mhz" AN 240 Motorola

    MRF69

    Abstract: No abstract text available
    Text: MOTOROLA m SEMICONDUCTOR TECHNICAL DATA 2N6985 The RF Line N PN S ilicon Push-Pull RF P o w er Transistor 125 WATTS. 30-400 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r w id e b a n d large-signal o u tp u t and


    OCR Scan     		PDF 2N6985 MRF69

    Untitled

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed prim arily for application as a high-pow er linear am plifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP Minim um Gain = 10 dB


    OCR Scan     		PDF MRF421