M5757/40-005
Abstract: DIODE 65A
Text: High Performance Relays and Power Contactors Shock 30 G's 30 G's 30 G's 30 G's 30 G's 100 G's 100 G's 150 G's 100 G's 100 G's Contact Form Contact Rating Coil Voltage Temperature Rating Vibration Shock Mil-Spec Up to 10A Up to 2A Up to 4A Up to 5A Up to 2A
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12led
M5757/8
M5757/23*
M39016/32
M39016
M5757/10
M5757/10
M5757/7
M5757/1
M5757
M5757/40-005
DIODE 65A
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H944
Abstract: No abstract text available
Text: HMC944LC4 v03.0614 SWITCHES - SPDT - SMT GaAs MMIC SP4T REFLECTIVE SWITCH, 23 - 30 GHz Typical Applications Features The HMC944LC4 is ideal for: Broadband Performance: 23 - 30 GHz • Telecom Infrastructure High Isolation: 35 dB • Microwave Radio & VSAT
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HMC944LC4
HMC944LC4
H944
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Untitled
Abstract: No abstract text available
Text: HMC1084LC4 v00.0313 SWITCHES - SP4T - SMT GaAs MMIC SP4T REFLECTIVE SWITCH 23 - 30 GHz Typical Applications Features The HMC1084LC4 is ideal for: Broadband Performance: 23 - 30 GHz • Telecom Infrastructure High Isolation: 26 dB • Microwave Radio & VSAT
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HMC1084LC4
HMC1084LC4
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Untitled
Abstract: No abstract text available
Text: HMC944LC4 v02.1110 GaAs MMIC SP4T REFLECTIVE SWITCH, 23 - 30 GHz Typical Applications Features the hMc944Lc4 is ideal for: Broadband Performance: 23 - 30 Ghz • telecom infrastructure high isolation: 35 dB • Microwave Radio & VSAt insertion Loss: 2.8 dB
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HMC944LC4
HMC944LC4
16mm2
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24 GHz Microwave Sensor
Abstract: No abstract text available
Text: HMC944LC4 v00.0910 GaAs MMIC SP4T REFLECTIVE SWITCH, 23 - 30 GHz Typical Applications Features The HMC944LC4 is ideal for: Broadband Performance: 23 - 30 GHz • Telecom Infrastructure High Isolation: 35 dB • Microwave Radio & VSAT Insertion Loss: 2.8 dB
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HMC944LC4
HMC944LC4
pin350
24 GHz Microwave Sensor
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Untitled
Abstract: No abstract text available
Text: HMC944LC4 v00.0910 GaAs MMIC SP4T REFLECTIVE SWITCH, 23 - 30 GHz Typical Applications Features The HMC944LC4 is ideal for: Broadband Performance: 23 - 30 GHz • Telecom Infrastructure High Isolation: 35 dB • Microwave Radio & VSAT Insertion Loss: 2.8 dB
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HMC944LC4
HMC944LC4
than350
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24 GHz Microwave Sensor
Abstract: HMC944LC4
Text: HMC944LC4 v02.1110 GaAs MMIC SP4T REFLECTIVE SWITCH, 23 - 30 GHz Typical Applications Features The HMC944LC4 is ideal for: Broadband Performance: 23 - 30 GHz • Telecom Infrastructure High Isolation: 35 dB • Microwave Radio & VSAT Insertion Loss: 2.8 dB
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HMC944LC4
HMC944LC4
24 GHz Microwave Sensor
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HMC812LC4
Abstract: No abstract text available
Text: HMC812LC4 v00.0309 Attenuators - ANALOG - SMT 8 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 5 - 30 GHz Typical Applications Features The HMC812LC4 is ideal for: Wide Bandwidth: 5 - 30 GHz • Point-to-Point Radio Excellent Linearity: +25 dBm Input P1dB • VSAT Radio
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HMC812LC4
HMC812LC4
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hmc712
Abstract: microwave sensors Variable Attenuators to 2 GHZ
Text: HMC712 v00.1008 ATTENUATORS - ANALOG - CHIP 1 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 5 - 30 GHz Typical Applications Features The HMC712 is ideal for: Wide Bandwidth: 5 - 30 GHz • Point-to-Point Radio Excellent Linearity: +28 dBm Input P1dB • VSAT Radio
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HMC712
HMC712
025mm
microwave sensors
Variable Attenuators to 2 GHZ
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Untitled
Abstract: No abstract text available
Text: HMC712 v01.0709 AttenuAtors - AnAlog - Chip 1 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 5 - 30 GHz Typical Applications Features the hMC712 is ideal for: Wide Bandwidth: 5 - 30 ghz • point-to-point radio excellent linearity: +28 dBm input p1dB • VsAt radio
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HMC712
HMC712
025mm
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Untitled
Abstract: No abstract text available
Text: HMC812LC4 v02.0911 AttenuAtors - AnALoG - sMt 8 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 5 - 30 GHz Typical Applications Features the HMC812LC4 is ideal for: Wide Bandwidth: 5 - 30 GHz • Point-to-Point Radio excellent Linearity: +28 dBm Input IP3 • VSAT Radio
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HMC812LC4
HMC812LC4
16mm2
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Untitled
Abstract: No abstract text available
Text: HMC812LC4 v02.0911 Attenuators - ANALOG - SMT 8 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 5 - 30 GHz Typical Applications Features The HMC812LC4 is ideal for: Wide Bandwidth: 5 - 30 GHz • Point-to-Point Radio Excellent Linearity: +28 dBm Input IP3 • VSAT Radio
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HMC812LC4
HMC812LC4
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Untitled
Abstract: No abstract text available
Text: HMC812LC4 v03.0614 ATTENUATORS - ANALOG - SMT GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 5 - 30 GHz Typical Applications Features The HMC812LC4 is ideal for: Wide Bandwidth: 5 - 30 GHz • Point-to-Point Radio Excellent Linearity: +28 dBm Input IP3 • VSAT Radio
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HMC812LC4
HMC812LC4
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HMC712
Abstract: No abstract text available
Text: HMC712 v01.0709 ATTENUATORS - ANALOG - CHIP 1 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 5 - 30 GHz Typical Applications Features The HMC712 is ideal for: Wide Bandwidth: 5 - 30 GHz • Point-to-Point Radio Excellent Linearity: +28 dBm Input P1dB • VSAT Radio
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HMC712
HMC712
025mm
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ceramic attenuator
Abstract: HMC812LC4 microwave sensors Variable Attenuators to 2 GHZ
Text: HMC812LC4 v00.0309 ATTENUATORS - ANALOG - SMT 5 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 5 - 30 GHz Typical Applications Features The HMC812LC4 is ideal for: Wide Bandwidth: 5 - 30 GHz • Point-to-Point Radio Excellent Linearity: +25 dBm Input P1dB • VSAT Radio
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HMC812LC4
HMC812LC4
16mm2
ceramic attenuator
microwave sensors
Variable Attenuators to 2 GHZ
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Untitled
Abstract: No abstract text available
Text: HMC994 v02.1011 AMPLIFIERS - LINEAR & POWER - CHIP GaAs pHEMT MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz Typical Applications Features The HMC994 is ideal for: High P1dB Output Power: 28 dBm • Test Instrumentation High Psat Output Power: 30 dBm • Microwave Radio & VSAT
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HMC994
HMC994
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transistor 40411
Abstract: 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442
Text: PNP Compla•Typ«* HMnt V cextut ic Volts) Max IS/fe »M hn ® ic / m (Mln-Max @A/¥) (V@A/A) 3.0 @ 1.5/.3 3.0 @ 1.5/3 1 @ 1.5/.1 1 @ 1.5/.1 3.2@ .8/.08 3.5@ 1.5/4 3.5 @1.5/4 2.5 @1.5/4 2.5@ 1.5/4 4.0@ .8/4 .025*030 .025* @30 .025*@30 .025’ @30 .20* @30
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TC-25Â
2N1487
2N1488
2N1489
2N1490
2N1702
2N3442
2N4347
2N3715
2N3791
transistor 40411
2N5867
2N6258
40411 transistor
2N1487
2N1488
2N1489
2N1490
2N1702
2N3442
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29rd120
Abstract: 21RC60 SF2500Ex21 39RC60 21RC80 11RC60 29RD80 29rd60 21RC100 SF1500EX24
Text: -27 n Ä V 1.75 1. 55 2. 40 1. 55 1. 55 1. 55 1. 55 1. 82 2. 50 1. 50 1. 50 1. 50 1. 50 2. 30 2. 30 2. 30 2. 30 2. 30 2.30 2. 30 2. 30 2. 20 2.20 2. 20 2. 20 2.20 2. 20 2. 20 2. 20 1. 92 1. 92 1. 92 1. 92 1. 92 1. 92 2. 10 2. 10 2.10 2. 10 2. 10 dv/dt (min)
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SF1500EX24
SF1500G27
SF1500GX21
SF1500J27
H-101
29rd120
21RC60
SF2500Ex21
39RC60
21RC80
11RC60
29RD80
29rd60
21RC100
SF1500EX24
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NE85630
Abstract: nec03 NE68030 NE68130 2SC4227 2SC4228 NE68330 NEC0330 NE68030 NEC Mini-Mold
Text: NEC/ CALIFORNIA 5bE 3> NEC • hM2?mM 0002352 MbM MNECC 30 PACKAGE SUPER MINI-MOLD FEATURES OUTLINE DIMENSIONS Unite in mm • 40 % REDUCTION IN FOOTPRINT AREA (from SOT-23) OUTLINE 30 • 30 % REDUCTION IN HEIGHT (from SOT-23) «— 2 .1± 0.1 — : • 50% REDUCTION IN WEIGHT
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OT-23)
NE85630
nec03
NE68030
NE68130
2SC4227
2SC4228
NE68330
NEC0330
NE68030 NEC
Mini-Mold
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wd4m
Abstract: No abstract text available
Text: COMPLIANT PIN IMPEDANCE DESCRIPTION PLATING DIM 30 MICROINCH GOLD 50 MICROINCH GOLD 30 MICROINCH GOLD, LEADFREE 950-521A-B1E 50 MICROINCH GOLD, LEADFREE 950-521C-B1B 30 MICROINCH GOLD 50 MICROINCH GOLD 950-521C-B1D 30 MICROINCH GOLD, LEADFREE 950-521C-B1E
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50-521A-500
C950-521A-500
Q1109-C0NNEC
wd4m
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intel 2148H
Abstract: INTEL 3214 2148H 2149H intel 3212 2148 static ram
Text: 2148H FAMILY 1024 x 4 BIT STATIC RAM ^iU M O IÎM Y •2148H-2 2148H-3 2148H ‘ 2148HL-3 2148HL Max. Access Time ns 45 55 70 55 TO Max. Active Current (mA) 150 *150 *150 125 125 Max. Standby Current (mA) 30 30 30 20 20 • Improved Performance Margins ■ HMOS* III Technology
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2148H
2148H-2
2148H-3
2148HL-3
2148HL
4096-bit
2144H-3/HL-3
intel 2148H
INTEL 3214
2149H
intel 3212
2148 static ram
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DIODE SMD 6M
Abstract: No abstract text available
Text: Absolute Maximum Ratings T ype No. V rm lo Conditions [V ] [A ] [•G] I fsm Electrical Characteristics Tstg T| PC] Vf max Tc 30 30 4 40 *D F 4 0 S C 3 L 30 * 40 4 S60SC3M L 30 30 40 40 0M 60 : -5 5 -1 2 5 97 300 III 350 102 300 1 12 400 106 350 126 60 150
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F30SC
F30PC
D120SC3M
D180SC3M
0240SC3M
D360SC3M
DIODE SMD 6M
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KSP12
Abstract: KST63
Text: FUNCTION GUIDE TRANSISTORS 1-5. Darlington Transistors 1-5-1. SOT-23 Type Transistors Condition Device and Polarity NPN Vceo V PNP KST13<1M) KST14I1N) 30 30 30 30 KST63(2U) KST64(2V) lc (A) lc <mA) MIN 5 5 5 5 100 100 100 100 10K 10K 10K 10K 0.3 0.3 0.5
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OT-23
KST14I1N)
KST63
KST64
KSP27
KSP12
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Untitled
Abstract: No abstract text available
Text: 1. Mechanical Dimensions: B 7.10 ±0 .30 2 . Schem atic: C 3.20 Max 4.20 REF 1 r a X a o cq CO 3. Electrical Specifications: TOP VIEW OCL: 3 .30 uH ±2 0% @ 100KHz 0.25V, O.OAdc Q: 20 Min @ 100KH z 0.25V — I 3.70 |— DCR: 30 m O hm s Max in ro Irms: 6.0Adc B ased on 40’C Temp Rise
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100KHz
100KH
MIL-STD-202G,
UL94V-0
E151556
102mm)
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