AWM 2725 VW-1 80C 30V
Abstract: USB cable AWM 2725 USB cable AWM 2725 26awg awm 2725 30v cable specification 2725 awm 80c 30v vw-1 USB cable AWM 2725 vw-1 DC400V awm 2725 vw-1 USB A TYPE MALE USB mini MALE awm 2725 vw-1 awm 2725 VW
Text: REVISION DESCRIPTION REV. DATE APPROVED 4880 ± 100 1 P1 2 4 5 6 3 12 11 10 13 4 3 2 1 USB 4P A /M MOLDING TYPE (MOLD NO: G102-506) TAPE PIN OUT 15 14 8 2 3 1 4 USB 4P(B)/M MOLDING TYPE (MOLD NO: G102-507) No. 120 ± 20 7 P2 12.2 ± 0.4 12.2 ± 0.4 FRONT 9
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G102-506)
G102-507)
USB20AWGx2C
E166307
20/26AWG
DC400V
AWM 2725 VW-1 80C 30V
USB cable AWM 2725
USB cable AWM 2725 26awg
awm 2725 30v cable specification
2725 awm 80c 30v vw-1
USB cable AWM 2725 vw-1
awm 2725 vw-1 USB A TYPE MALE USB mini MALE
awm 2725 vw-1
awm 2725 VW
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04A21
Abstract: SD-5566 55b6 cr 6224 T AM 22A 1043 5566S SD5566 ru 94v0 circuit MOLEX mxj 8A
Text: 10 3 7 „8 20 39 3 3 „6 8 3 4 .8 2 9 .4 6 3 0 „6 LO CM 2 „6 8 co co 9 .6 S 4 .2 — 4 'ST DIM. A F I n n 14 II 5 1 F I n n 14 H5 1p in F I M 7|b M 10II 1 M M »il6 M m T n 4 2 1? F I n n 14 I 5 16^ M 8II9 M l"l 12 13 IS IT n n n M M F in 1BI 3 1 f,3| »i 6
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D-5566-NA*
04A21
SD-5566
55b6
cr 6224 T
AM 22A 1043
5566S
SD5566
ru 94v0 circuit
MOLEX mxj 8A
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BUP37
Abstract: LE17
Text: SEMELAB BUP37 R e v e rs e B ias S O A 3 5 7 10 2 3 5 7100 3 3 5 7 1000 C o lle c to r T o E m itte r V o lta g e , Vce - V 01 2 3 5 1 0 2 3 5 10 2 3 5 100 2 3 5 C o lle c to r T o E m itte r V o lt a g e . V CE - V 1000 20 40 60 80 100 120 A m b ie n t T e m p e r a t u r e , T a - °C
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BUP37
55to150Â
BUP37
LE17
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navmat p 4855-1
Abstract: No abstract text available
Text: \ S IC O R M I-R A M Military Ripple Attenuator Modules MI-RAM Specifications typical at Tbp = 25°C, nominal line, 75% load unless otherwise specified PARAMETER MIN MAX TYP REMARKS 3 mV pp MI-200; 10% to 100% load 10 mV pp MI-J00; 10% to 100% load Input Voltage Range
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MI-200;
MI-J00;
MI-RAM-11
MIL-STD-461
MIL-STD-704A
MIL-STD-1275A
MIL-STD-810
navmat p 4855-1
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Untitled
Abstract: No abstract text available
Text: LITEM Cl SEMICONDUCTORS M B R 1 3 t h r u M B R 1 6 V O LT A G E R ANG E 10 AM PS 30 to 60 V o lts SCHOTTKY BARRIER PECVFIEF CURRENT 10 Amperes FEATURES Plastic package has U /L Flam m ability Classification 94V-0 Exceeds environm ental standards o f M IL-S-19500
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IL-S-19500
DO-15
0201AD
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Untitled
Abstract: No abstract text available
Text: DRAWING No.: Customer Informaticin Sheet SHEET M 8 0 - 5 S 2 10 0 5 M L - 0 2 - 3 3 A - 0 4 - 3 3 A 2 OF 2 1 IF IN D O U B T - ASK i NOT i TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D PPS, U L 9 4 V - 0 , B L A C K
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Untitled
Abstract: No abstract text available
Text: Customer Information Sheet D R A W I N G No.: M 8 3 L M L 3 M I N 1 9 0 10 1-333 | S H E E T 2 OF 2 IF IN D O U B T - ASK | c | NOT T O S C A L E | THIRD ANGLE PROJECTION I A LL D I M E N S I O N S IN m m SPECIFICATIONS: MATERIAL: MOULDING CONTACT No. SECTION
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M83-LML3MIN19
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Untitled
Abstract: No abstract text available
Text: Customer Informaticin Sheet DRAWING No.: M 8 0 - 5 T 10 4 2 2 M 3 - 0 4 - 3 3 2 - 0 0 - 0 0 0 SHEET 2 OF 2 1 IF IN D O U B T - ASK i NOT i TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D PPS, U L 9 4 V - 0 , B L A C K
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M80-5TI0422M3-04-332-00-000
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FK20SM-10
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET F K 2 0 S M -1 0 HIGH-SPEED SWITCHING USE FK20SM-10 OUTLINE DRAWING Dimensions in mm 4.5 15 .9 M A X . 3.2 4 .4 1.0 5 .4 5 5 .4 5 0.6 If Q w Vd ' ss .500V . rDS ON (MAX) 0 .3 6 ÍÍ ID . 20A Integrated Fast Recovery Diode (M A X .)
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FK20SM-10
150ns
FK20SM-10
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Untitled
Abstract: No abstract text available
Text: Customer Informatic>n Sheet DRAWING No.: M 8 0 - 5 T 10 4 2 2 M 3 - 0 2 - 3 3 2 - 0 0 - 0 0 0 SHEET 2 OF 2 j IF IN D O U B T - ASK i NOT i TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D P PS , U L 9 4 V - 0 , B L A C K
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M80-5TI0422M3-02-332-00-000
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Untitled
Abstract: No abstract text available
Text: Customer Informatic>n Sheet DRAWING N o.: M 8 0 - 5 T 10 8 0 5 M 3 - 0 4 - 3 3 2 - 0 0 - 0 0 0 SHEET 2 OF 2 1 IF IN D O U B T - ASK i NOT i TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D PPS, U L 9 4 V - 0 , B L A C K
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M80-5TI0805M3-04-332-00-000
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MSG180L41
Abstract: 4a2d 2X20 EMGE07-06A EMGE07-08A H-17 H-18 2108B-1 32C36 359RGA
Text: — 280 — V 4 '1 X 9 • M S G I8 0 o 4 I V im m m Ü C IU o îêî§ üüiîi MSG180G4Î ' W O ü iO U M l ÎIM I V MSC180.Y41- MSG180U41 2500V ■» K | ¡Ü C R 2 T ° 2 l -H o î | ( +) 3 (- ) 2 - 0 & 3 ia 2 \ 3-(M5X 10 ) * 2Û 0± Q 2 9 2 .0 1 0 .5
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EMGE07
EMGE07-06A
EMGE07-08A
50HziE?
100/isKT)
H-101
MSG180L41
4a2d
2X20
EMGE07-08A
H-17
H-18
2108B-1
32C36
359RGA
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GS 069
Abstract: vfbr
Text: L V X v 'J -X /\°7 -M 0 S F E T LVX S eries Pow er M OSFET Itm-Jfem 2SK2063 OUTLINE DIMENSIONS Case : STO-22Û [F20S25] 250V 20A [U nit ! m m ] v-j n w rw Date code :f e • A C i s s ) g 4 .6 1 0.2 _ _ 1 .3 ±02 o 10-2 ú r Y 19 EIA J No. 2 .4 ± u
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STO-22Û
2SK2063
F20S25]
K2Q63
F20S25)
DIII02415
GS 069
vfbr
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Untitled
Abstract: No abstract text available
Text: M K 2/12 SLS2/2 SLS2/4 D irect M ount Term inals Feed Through M K 10/14 M K 3/12 m; O j- Hi e o .e s Dim ensions W idth/Length/Height mm mm in. Insulation stripping length mm mm (in.) 8.5 / 13.5 / 12 (3.48/.53/.47J 8 6 / 1 5 / 1 5 (3.39/.S9/.59)
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33A59/
380VAC
60VAC
125VAC
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Untitled
Abstract: No abstract text available
Text: TOSHIBA U20GL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U20GL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION U n it in mm CONVERTER & CHOPPER APPLICATION 1.32 10-3 M A X. • Rep etitive Peak Reverse Voltage : V r r m = 400V •
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U20GL2C48A
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Untitled
Abstract: No abstract text available
Text: DRAWING No.: M 8 0 - 5 T 10 6 2 2 M 2 - 0 4 - 3 3 1 - 0 0 - 0 0 0 Customer Informaticin Sheet SHEET 2 OF 2 1 IF IN D O U B T - ASK i NOT i TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D PPS, U L 9 4 V - 0 , B L A C K
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M80-5TI0622M2-04-33I-00-000
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Untitled
Abstract: No abstract text available
Text: DRAWING No.: M 8 0 - 5 T 10 2 2 2 M 2 - 0 2 - 3 3 1 - 0 0 - 0 0 0 Customer Informaticin Sheet SHEET 2 OF 2 1 IF IN D O U B T - ASK i NOT i TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D PPS, U L 9 4 V - 0 , B L A C K
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M80-5T10222M2-02
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Untitled
Abstract: No abstract text available
Text: DRAWING No.: M 8 0 - 5 T 10 2 2 2 M 2 - 0 4 - 3 3 1 - 0 0 - 0 0 0 Customer Informaticin Sheet SHEET 2 OF 2 1 IF IN D O U B T - ASK i NOT i TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D PPS, U L 9 4 V - 0 , B L A C K
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Untitled
Abstract: No abstract text available
Text: 10 S IB I. LG o NOTES 553 3 v ' J - X M A T ES WITH : 5 5 3 3 S E R IE S . 'r B mm SD-5533-NC PB £#S§fflZ<L„ R E F F E R TO S D -5 5 3 3 -N C P B DRAWING FOR P. C. BO AR DS P O SIT IO N IN G D IM E N SIO N S. U M M A T E R IA L t r y : I t n to.4 z ^ j l t ±6
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SD-5533-NC
5532-NA
5532-NA.
5532-40A7F
-38A7F
-36A7F
-34A7F
-32A7F
-30A7F
-28A7F
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Untitled
Abstract: No abstract text available
Text: S crew C lam p 3 2 /3 5 m m D IN -R ail Term inals O pen S crew C lam p Single Level Feed Through OSC 4 O SC 10 OSC 16 6 / 4 1 ! 45 0.2471.6171.77" 8 / 41 / 50 (.03271.6171.96'} 1 0 / 4 1 / 5 0 (0.3971.6171.96") 6 / 4 1 / 47 (0.2471.6171.88") 8 / 41 / 5 2 (.3271.6172.05")
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pin configuration 74LS10
Abstract: M74HC10P 4000B 74LS10 M74HC10 M74HC10DP of IC 74ls10 CMOS 74LS10 logic diagram of IC 74ls10 74LS10 mitsubishi
Text: M IT S U B IS H I HIGH S P E E D C M O S M74HC10P M74HC10DP T R IP L E 3 -IN P U T P O S IT IV E NAND G A TE DESCRIPTION The M 74H C 10 is a sem iconductor integrated circu it con sisting of three 3-input p o sitive-lo gic PIN CONFIGURATION TOP VIEW NAND, usable as
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M74HC10P
M74HC10DP
M74HC10
pin configuration 74LS10
4000B
74LS10
M74HC10DP
of IC 74ls10
CMOS 74LS10
logic diagram of IC 74ls10
74LS10 mitsubishi
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Untitled
Abstract: No abstract text available
Text: Customer Informatic>n Sheet DRAWING No.: M 8 0 - 5 T 10 6 0 5 M 2 - 0 2 - 3 3 1 - 0 0 - 0 0 0 SHEET 2 OF 2 1 IF IN D O U B T - ASK i NOT i TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D PPS, U L 9 4 V - 0 , B L A C K
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M80-5T10605M2-02
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Untitled
Abstract: No abstract text available
Text: Customer Informaticin Sheet DRAWING No.: M 8 0 - 4 C 10 4 0 5 F 2 - 0 3 - 3 2 5 - 0 0 - 0 0 0 SHEET 2 OF 2 1 IF IN D O U B T - ASK i NOT i TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS IN m m SPECIFICATIONS: MATERIAL: M O U L D I N G : G L A S S F I L L E D PPS, U L 9 4 V - 0 , B L A C K
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M80-4CI0405F2-03-325-00-000
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 8 A ISSUE 3 - FEBRUARY 1995. — . FEATURES * * V cev =50V Very Low Saturation Voltages * High Gain * 20 A m p s pulse current
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ZTX1048A
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