2SV 70 Search Results

Contextual Info: Drawing XMK Seríes MECHANICAL SPECIFICATIONS M T IN G FORCEr 5-251Í RE1ENTIÜN STRENGTH: ^ 7 6 N D U R A B ILIT Y & 7G 0 T l t f S ELECTRICAL CURRENT KATIH G 5 L SAW S VOt-TM*; RATING: ]2SV AC INSU LATION RtSlSTAfiCKi ^ lD O O H Ü 1171 [STANDING VOLTAGE: AC L000V RMS BOta o r 60htz IMin

Contextual Info: B 3 RADI A L L LATCHING Page 1/ 2 S.P.D.T. SWITCH OPTIONS: R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER # 350 W 250 W 150 W 120 W 100 W right

Contextual Info: B 3 RADI A L L OPTIONS: N INDICATOR FAILSAFE TRANSFER Page 1/ 2 SWITCH /SUPP.DIODES R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 3 GHz : 50 Ohms 1 - 2 2 - 3 1.15 1.20 1.25 0.15 dB 0.20 dB 0.25 dB >= 85 dB 80 dB 75 dB AVER. POWER # 700 W 500 W 400 W

Contextual Info: B 3 RADI A L L LATCHING Page 1/ 2 S.P.D.T. SWITCH OPTIONS: /SUPP.DIODES R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER # 350 W 250 W 150 W 120 W

Contextual Info: B 3 RADI A L L N FAILSAFE TRANSFER Page 1/ 2 SWITCH OPTIONS:/ TTL DRIVE R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 3 GHz : 50 Ohms 1 - 2 2 - 3 1.15 1.20 1.25 0.15 dB 0.20 dB 0.25 dB >= 85 dB 80 dB 75 dB AVER. POWER # 700 W 500 W 400 W FREQUENCY (GHz)

E13000

Contextual Info: B 3 RADI A L L 6GHz TECHNICAL DATA SHEET QMA FAILSAFE R577E13000 TRANSFER Page 1/ 2 SWITCH OPTIONS: R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 6 GHz : 50 Ohms 0 - 3 3 - 6 1.20 1.30 0.20 dB 0.30 dB >= 80 dB 70 dB AVER. POWER # 120 W 80 W FREQUENCY (GHz)

R570

Contextual Info: B 3 RADI A L L 12.4GHz TECHNICAL DATA SHEET TNC LATCHING R570 633000 Page 1/ 2 S.P.D.T. SWITCH OPTIONS: R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER #

Contextual Info: B 3 RADI A L L LATCHING Page 1/ 2 S.P.D.T. SWITCH OPTIONS: /SUPP.DIODES R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER # 350 W 250 W 150 W 120 W

Contextual Info: B 3 RADI A L L FAILSAFE Page 1/ 2 S.P.D.T. SWITCH OPTIONS: R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER # 350 W 250 W 150 W 120 W 100 W right

Contextual Info: B 3 RADI A L L FAILSAFE Page 1/ 2 S.P.D.T. SWITCH OPTIONS: R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER # 700 W 500 W 400 W 250 W 200 W right

Contextual Info: B 3 RADI A L L FAILSAFE Page 1/ 2 S.P.D.T. SWITCH OPTIONS: /SUPP.DIODES R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER # 700 W 500 W 400 W 250 W

Contextual Info: B 3 RADI A L L N FAILSAFE TRANSFER Page 1/ 2 SWITCH OPTIONS:/ TTL DRIVE R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 3 GHz : 50 Ohms 1 - 2 2 - 3 1.15 1.20 1.25 0.15 dB 0.20 dB 0.25 dB >= 85 dB 80 dB 75 dB AVER. POWER # 700 W 500 W 400 W FREQUENCY (GHz)

Contextual Info: B 3 RADI A L L FAILSAFE Page 1/ 2 S.P.D.T. SWITCH OPTIONS: /SUPP.DIODES R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER # 350 W 250 W 150 W 120 W

Contextual Info: B 3 RADI A L L 12.4GHz TECHNICAL DATA SHEET TNC FAILSAFE R570 613005 Page 1/ 2 S.P.D.T. SWITCH OPTIONS: R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER #

uv phototransistor

Contextual Info: 6 79 8 5 8 0 OP T E K TECHNOLOGY OPTeFtECHNOLOSY 86 D 00038 INC INC ~ ab DE £/ 7 %. D IbT^ÖSfiO ' □□0DQ3S Sy ! s PH O T O T RA N SISTO R A N O PH O TO D ARLIN G TO N CHIPS ILtCTNICAl CHARACflftltTICt MC*CI leio BVew MIN IC=IOO < MAX VCE=I0V 8 PART NUMBER

Contextual Info: B 3 RADI A L L OPTIONS: N INDICATOR FAILSAFE TRANSFER Page 1/ 2 SWITCH /SUPP.DIODES R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 3 GHz : 50 Ohms 1 - 2 2 - 3 1.15 1.20 1.25 0.15 dB 0.20 dB 0.25 dB >= 85 dB 80 dB 75 dB AVER. POWER # 700 W 500 W 400 W

Contextual Info: '• r n RAD I ALL OPTIONS: INDICATOR N FAILSAFE TRANSFER Page SWITCH 112 I TTL DRIVE R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 3 GHz : 50 Ohms 1 - 2 2 - 3 1.15 1.20 1.25 0.15 dB 0.20 dB 0.25 dB >= 85 dB 80 dB 75 dB AVER. POWER # 700 W 500 W

Contextual Info: B 3 RADI A L L N FAILSAFE TRANSFER Page 1/ 2 SWITCH OPTIONS:/ TTL DRIVE R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 3 GHz : 50 Ohms 1 - 2 2 - 3 1.15 1.20 1.25 0.15 dB 0.20 dB 0.25 dB >= 85 dB 80 dB 75 dB AVER. POWER # 700 W 500 W 400 W FREQUENCY (GHz)

Contextual Info: B 3 RADI A L L 12.4GHz TECHNICAL DATA SHEET TNC LATCHING R570 633005 Page 1/ 2 S.P.D.T. SWITCH OPTIONS: R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER #

NE540

Abstract: SE540 NE540 equivalent 500 watts amplifier schematic diagram 236BG 5612
Contextual Info: PIN CONFIGURATION FEATURES . • • • • INTERNAL CURRENT LIMITING LOW STANDBY CURRENT HIGH OUTPUT CURRENT CAPABILITY WIDE POWER BANDWIDTH LOW DISTORTION ABSOLUTE MAXIMUM RATINGS Supply Voltage Operating Temperature Range Storage Temperature Range Output Short Circuit Duration

Contextual Info: , L nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973) 376-2922 (212)227-6005 FAX: (973) 376-8960 SD1462 RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C CLASS C TRANSISTOR FREQUENCY 400MHz VOLTAGE 28V POWER OUT 70W POLWER GAIN 9.00B

2SD210

Contextual Info: HITACHI 2SD210 7 -Silicon NPN Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO 70 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 5

Contextual Info: FU JI tìU.eieu'UtìUK 2SK2643-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,55Q 15A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated

S0146

Contextual Info: Hm -ft.ix -m m "140Commerce Drive m iC fO S B tU l Montgomeryviile, PA 18936-1013 I^ Œ h SÊ b s Î * Tel: 215 631-9840 - S D 1 4 6 8 RF AND MICROWAVE TRANSISTORS WIDE BAND UHF-VHF CLASS C CLASS C TRANSISTOR FREQUENCY 400MHz VOLTAGE 23V POWER OUT 70W POWER GAIN