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    Renesas Electronics Corporation 2SK973L-E

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    Rochester Electronics 2SK973L-E 1,709 1
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    2SK973 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK973 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK973 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK973 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK973 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK973 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK97-3 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK973L Hitachi Semiconductor Mosfet Guide Original PDF
    2SK973L Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK973L Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK973L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK973(L)(S) Unknown FET Data Book Scan PDF
    2SK973S Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK973S Hitachi Semiconductor Mosfet Guide Original PDF
    2SK973S Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK973S Unknown Shortform Datasheet & Cross References Data Short Form PDF

    2SK973 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK973

    Abstract: Hitachi DSA0015
    Text: 2SK973 L , 2SK973(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK973 Hitachi DSA0015

    Untitled

    Abstract: No abstract text available
    Text: 2SK973L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)10 Minimum Operating Temp (øC)


    Original     		PDF 2SK973L

    2SK97-3

    Abstract: 2SK973
    Text: 2SK973 L , 2SK973 S Silicon N-Channel MOS FET Application 4 DPAK-1 High speed power switching 4 Features 12 • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,


    Original     		PDF 2SK973 2SK97-3

    Untitled

    Abstract: No abstract text available
    Text: 2SK973S Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)10 Minimum Operating Temp (øC)


    Original     		PDF 2SK973S

    Hitachi 2SJ

    Abstract: Hitachi DSA002751
    Text: 4AM13 Silicon N-Channel/P-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.4 Ω, VGS = 10 V, ID = 1.5 A P-channel: RDS(on) ≤ 0.45 Ω, VGS = –10 V, ID = –1.5 A • Capable of 4 V gate drive


    Original     		PDF 4AM13 2SK973 2SJ182 SP-10 D-85622 Hitachi 2SJ Hitachi DSA002751

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SK2225

    Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
    Text: CONTENTS • Index. 4 ■ General Information.


    Original     		PDF PM50150K 31Max 2SK2225 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent

    Untitled

    Abstract: No abstract text available
    Text: 2SK973 L , 2SK973(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		PDF 2SK973 2SK973Ã

    2SK973

    Abstract: No abstract text available
    Text: 2SK973 L , 2SK973(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive. DC-DC converter, power switch and solenoid drive


    OCR Scan     		PDF 2SK973

    2SJ235

    Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ235 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet

    2SK1275

    Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
    Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1202 2SK1203 2SK1204 2SK696 2SK1275 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK16

    2SK1778

    Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


    OCR Scan     		PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094

    2SK44

    Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
    Text: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK44 2SJ182 2SJ214 2SK513 2SJ235

    2SK1778

    Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1665 2SJ215 2SJ217 2SK1303 2SK1778 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972

    K973

    Abstract: 2SK973 SP-10 4AK18 2SK97-31
    Text: HITACHI 4AK18 SILICON N-CHANNEL P O W E R MOS FET ARRAY HIGH S P EED PO W ER SWITCHING • FEA TU RES • Low O n-R esistance Rds on ^ 0.38 Q , V GS = 10 V, l0 = 1 A RD3 ( o n ) ^ 0 . 5 3 i i , V es = 4 V , lD = 1 A • C apable of 4 V G ate Drive • Low Drive C u rrent


    OCR Scan     		PDF 4AK18 2SK973 SP-10) 4AK18 K973 2SK973 SP-10 2SK97-31

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212

    2sk1299

    Abstract: PF0042 2SJ295 2SJ299 2SK1919 PF0040 KWSA103 PF0030 Hitachi Scans-001
    Text: 29 HITACHI 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m


    OCR Scan     		PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2sk1299 PF0042 2SJ295 2SJ299 2SK1919 Hitachi Scans-001

    FHX04FA

    Abstract: 3SK71 FHR10X 3SK38 FHR01FH FHX05FA 3SK38A NEC 2501L 4AK15 4AK17
    Text: - 130 - ft f m % tt m m € * 1 % K V* V, m * * tit /E Vg s * E % * (V (A) « » * P d /P c h (W) S (Ta=25,C ) 14 . Ig s s (max) (A) Vg s (V) (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) c (min) (typ) Vd s (S) (s) (V) Id (A) Id (A) Chop


    OCR Scan     		PDF 3SK38 3SK38A 3SK71 4AK15 4AK16 4AK17 60/115nstyp 2SK971/2SJ173 6AM13 CXD7500M FHX04FA FHR10X 3SK38 FHR01FH FHX05FA NEC 2501L

    2SK1778

    Abstract: 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


    OCR Scan     		PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094

    2SK1778

    Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


    OCR Scan     		PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237

    2sj177

    Abstract: 2sk1778 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SK97-2 2sk1301 2sj175
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sj177 2sk1778 2SK97-2 2sk1301 2sj175

    2SK975 equivalent

    Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC


    OCR Scan     		PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


    OCR Scan     		PDF O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297