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    K4113

    Abstract: 2sk4113 K4113 POWER TRANSISTOR
    Text: 2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4113 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


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    2SK4113 K4113 2sk4113 K4113 POWER TRANSISTOR PDF

    K4113

    Abstract: 2SK4113 2SK41
    Text: 2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4113 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.)


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    2SK4113 K4113 2SK4113 2SK41 PDF

    2sk4110

    Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
    Text: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3


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    BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent PDF

    2SK4111

    Abstract: 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666
    Text: STI Type: 2SK258 Notes: Breakdown Voltage: 250 Continuous Current: 8 RDS on Ohm: 1.12 Trans Conductance Mhos: 0.9 Trans Conductance A: 3.0 Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:


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    2SK258 O-204AA/TO-3 2SK259 2SK258H O-218 2SK695 2SK695A 2SK4111 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666 PDF