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    onsemi 2SK4116LS

    MOSFET N-CH 400V 8.9A TO220FI
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    onsemi 2SK4117LS

    MOSFET N-CH 400V 10.4A TO220FI
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    2SK411 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK411 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK411 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK411 Unknown FET Data Book Scan PDF
    2SK411 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK4115 Toshiba 2SK4115 - TRANSISTOR 7 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-16C1B, SC-65, 3 PIN, FET General Purpose Power Original PDF
    2SK4115 Toshiba Japanese - Transistors - Mosfets Original PDF
    2SK4115 Toshiba Transistors - Mosfets Original PDF
    2SK4115 Toshiba Switching Regulator Applications Original PDF
    2SK4116LS On Semiconductor 2SK4116LS - Power MOSFET 400V 8.9A 540mOhm Single N-Channel TO-220FP Original PDF
    2SK4116LS Sanyo Semiconductor N-Channel Silicon MOSFET General-Purpose Switching Device Original PDF
    2SK4117LS On Semiconductor 2SK4117LS - Power MOSFET 400V 10.4A 420mOhm Single N-Channel TO-220FP Original PDF
    2SK4117LS Sanyo Semiconductor N-Channel Silicon MOSFET General-Purpose Switching Device Original PDF
    2SK4118LS Sanyo Semiconductor N-Channel Silicon MOSFET General-Purpose Switching Device Original PDF
    2SK4119LS Sanyo Semiconductor N-Channel Silicon MOSFET General-Purpose Switching Device Original PDF

    2SK411 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK41

    Abstract: k4114
    Text: 2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK4114 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


    Original     		PDF 2SK4114 2SK41 k4114

    K4115 toshiba

    Abstract: TRANSISTOR K4115 k4115 2SK4115 K4115 toshiba transistor DSAE002454 toshiba k4115 2SK4115* equivalent k411 SC-65
    Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) 20.0±0.3 Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 • 9.0 High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF 2SK4115 K4115 toshiba TRANSISTOR K4115 k4115 2SK4115 K4115 toshiba transistor DSAE002454 toshiba k4115 2SK4115* equivalent k411 SC-65

    Untitled

    Abstract: No abstract text available
    Text: 2SK4116LS Ordering number : ENA0790A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4116LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


    Original     		PDF ENA0790A 2SK4116LS A0790-5/5

    K4116

    Abstract: 2SK4116LS N0707 A0790 IT12495 IT12501
    Text: 2SK4116LS 注文コード No. N A 0 7 9 0 B 三洋半導体データシート 半導体データシート No.NA0790A をさしかえてください。 2SK4116LS N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス


    Original     		PDF 2SK4116LS NA0790A K4116 N0707 IT12502 IT12367 IT12368 IT12369 IT10478 K4116 2SK4116LS A0790 IT12495 IT12501

    K4119

    Abstract: k411 2SK4119LS
    Text: 2SK4119LS Ordering number : ENA0830 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4119LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


    Original     		PDF 2SK4119LS ENA0830 A0830-5/5 K4119 k411 2SK4119LS

    k411

    Abstract: 2SK4116LS A0790
    Text: 2SK4116LS Ordering number : ENA0790 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4116LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


    Original     		PDF 2SK4116LS ENA0790 A0790-5/5 k411 2SK4116LS A0790

    K4118

    Abstract: 0348S k411 2SK4118LS ENA0829
    Text: 2SK4118LS Ordering number : ENA0829 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4118LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


    Original     		PDF 2SK4118LS ENA0829 A0829-5/5 K4118 0348S k411 2SK4118LS ENA0829

    2SK4114

    Abstract: k4114 toshiba k4114 2SK41
    Text: 2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK4114 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


    Original     		PDF 2SK4114 2SK4114 k4114 toshiba k4114 2SK41

    K4113

    Abstract: 2sk4113 K4113 POWER TRANSISTOR
    Text: 2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4113 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK4113 K4113 2sk4113 K4113 POWER TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: 2SK4117LS Ordering number : ENA0791A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4117LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


    Original     		PDF ENA0791A 2SK4117LS A0791-5/5

    TC-00000710

    Abstract: K4117 k411 2SK4117LS A0791
    Text: 2SK4117LS Ordering number : ENA0791A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4117LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


    Original     		PDF 2SK4117LS ENA0791A A0791-5/5 TC-00000710 K4117 k411 2SK4117LS A0791

    K4115 toshiba

    Abstract: TRANSISTOR K4115 k4115 toshiba k4115 K4115 toshiba transistor 2SK4115 TRANSISTOR 2SK4115 2SK4115* equivalent k411 SC-65
    Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) 1.0 ＋0.3 Rating Unit 1.0 －0.25 Drain-source voltage VDSS 900 V 5.45±0.2


    Original     		PDF 2SK4115 K4115 toshiba TRANSISTOR K4115 k4115 toshiba k4115 K4115 toshiba transistor 2SK4115 TRANSISTOR 2SK4115 2SK4115* equivalent k411 SC-65

    K4115 toshiba

    Abstract: TRANSISTOR K4115 k4115 2SK4115 TRANSISTOR 2SK4115 K4115 toshiba transistor k411 SC-65
    Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) 20.0±0.3 Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 • 9.0 High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF 2SK4115 K4115 toshiba TRANSISTOR K4115 k4115 2SK4115 TRANSISTOR 2SK4115 K4115 toshiba transistor k411 SC-65

    k411

    Abstract: 2SK4116LS A0790
    Text: 2SK4116LS Ordering number : ENA0790A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4116LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


    Original     		PDF 2SK4116LS ENA0790A A0790-5/5 k411 2SK4116LS A0790

    2SK4110

    Abstract: Power MOSFET, toshiba 2SK4110 6A 700V mosfet TO220-NIS TO220-NIS package
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SK4110 Category: Transistors /Power MOSFET/Nch 500V<VDSS 700V


    Original     		PDF 2SK4110 O-220NIS 2SK4110 16-Apr-09 Power MOSFET, toshiba 2SK4110 6A 700V mosfet TO220-NIS TO220-NIS package

    transistor k4110

    Abstract: 2sk4110 k4110 transistor transistor 2SK4110 K4110 2SK4110,K4110 2SK41
    Text: 2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK4110 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original     		PDF 2SK4110 SC-67 2-10R1B transistor k4110 2sk4110 k4110 transistor transistor 2SK4110 K4110 2SK4110,K4110 2SK41

    K4115 toshiba

    Abstract: TRANSISTOR K4115 TRANSISTOR 2SK4115 K4115 toshiba transistor 2sk4115 toshiba k4115 2SK4115(F)
    Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 1.0 ＋0.3 Rating Unit 1.0 －0.25 Drain-source voltage VDSS 900 V 5.45±0.2


    Original     		PDF 2SK4115 K4115 toshiba TRANSISTOR K4115 TRANSISTOR 2SK4115 K4115 toshiba transistor 2sk4115 toshiba k4115 2SK4115(F)

    K4118

    Abstract: k411 2SK4118LS IT12517
    Text: 2SK4118LS Ordering number : ENA0829A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4118LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


    Original     		PDF 2SK4118LS ENA0829A A0829-5/5 K4118 k411 2SK4118LS IT12517

    k4115

    Abstract: K4115 toshiba 2SK4115 toshiba k4115 2SK4115* equivalent SC-65 2SK4115,K4115, 2SK4115(F)
    Text: 2SK4115 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅣ 2SK4115 ○ スイッチングレギュレータ用 単位: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. : RDS (ON) = 1.6 Ω (標準) z オン抵抗が低い。 : IDSS = 100 A (最大) (VDS = 720 V)


    Original     		PDF 2SK4115 k4115 K4115 toshiba 2SK4115 toshiba k4115 2SK4115* equivalent SC-65 2SK4115,K4115, 2SK4115(F)

    K4113

    Abstract: 2SK4113 2SK41
    Text: 2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4113 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.)


    Original     		PDF 2SK4113 K4113 2SK4113 2SK41

    2SK425

    Abstract: 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 2SK417 2SK418


    Original     		PDF 2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK425 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433

    K4115 toshiba

    Abstract: No abstract text available
    Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOS 2SK4115 Switching Regulator Applications Unit: mm • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) 1.0 Rating Unit Drain-source voltage


    Original     		PDF 2SK4115 491led K4115 toshiba

    TRANSISTOR K4115

    Abstract: No abstract text available
    Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) 20.0±0.3 Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 • 9.0 High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF 2SK4115 TRANSISTOR K4115

    2SK425

    Abstract: 2sk423 2SK424 2SK530 2SK422 2SK426 2SK407 2SK425-13 2SK428 2SK433
    Text: A f m s 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 L (S) 2SK417 2SK418 2SK419 2SK420 2SK421 2SK422 2SK423 2SK424 2SK425 2SK426 2SK427 2SK428 2SK429(L)(S) 2SK430(L) (S) 2SK431 ' 2SK433 2SK435 2SK436 2SK437 a NEC NEC U aL BÍL


    OCR Scan     		PDF 2SK406 2SK407 2SK408 2SK409 2SK410 2SK531 2SK421 2SK422 2SK423 2SK424 2SK425 2sk423 2SK424 2SK530 2SK422 2SK426 2SK425-13 2SK428 2SK433