2SK370
Abstract: 2SJ108
Text: 2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit: mm • Suitable for use as first stage for equalizer and MC head amplifiers. · High |Yfs|: |Yfs| = 22 ms typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)
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2SK370
2SJ108
2SK370
2SJ108
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2SJ108
Abstract: 2SK370 Toshiba 2SJ 2SK370 TOSHIBA
Text: 2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit: mm • Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 22 ms typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)
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2SK370
2SJ108
2SJ108
2SK370
Toshiba 2SJ
2SK370 TOSHIBA
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Untitled
Abstract: No abstract text available
Text: 2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit: mm • Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 22 ms typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)
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2SK370
2SJ108
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Toshiba 2SJ
Abstract: No abstract text available
Text: 2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit: mm • Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 22 ms typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)
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2SK370
2SJ108
Toshiba 2SJ
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2SK370 TOSHIBA
Abstract: 2SK370 2SJ108 Toshiba 2SJ
Text: 2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit: mm • Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 22 ms typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)
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2SK370
2SJ108
2SK370 TOSHIBA
2SK370
2SJ108
Toshiba 2SJ
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Transistor 2sj108
Abstract: 2SJ108 2SK370 Toshiba 2SJ
Text: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)
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2SJ108
2SK370
Transistor 2sj108
2SJ108
2SK370
Toshiba 2SJ
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2SJ108
Abstract: 2SK370 Toshiba 2SJ
Text: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. · High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)
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2SJ108
2SK370
2SJ108
2SK370
Toshiba 2SJ
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2SK370 TOSHIBA
Abstract: 2SJ108 Toshiba 2SJ
Text: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)
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2SJ108
2SK370
25esented
2SK370 TOSHIBA
2SJ108
Toshiba 2SJ
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2SJ108
Abstract: 2SK370
Text: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)
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2SJ108
2SK370
2SJ108
2SK370
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2SK147BL
Abstract: 2SK147GR NF5102 LM3661TL-1.40 BSV79 BSV80 diode 6AB 2n4093 motorola 2N4095 2SK147-G
Text: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS 9f. (V) (A) Min (S) Max VGS(off) Max (V) IGSS Max (A) C. Max (F) PD Max (W) Derate at TOper (WrC) eCl Max Package Style N-Chann I JFETs, (Co nt' d) 5 10 15 20 25 30 35 40 45 50 Jl13A MPF4858
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Jl13A
MPF4858
MPF4858A
PN4093
SMPJl13A
SMPU1899
SMP4093
SOR4093
TMPFJl13A
TMPFU1899
2SK147BL
2SK147GR
NF5102
LM3661TL-1.40
BSV79
BSV80
diode 6AB
2n4093 motorola
2N4095
2SK147-G
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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2SJ108
Abstract: 2SK370
Text: TO SH IBA 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS • Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : |Yfs| = 22ms Typ. (VDS = 10V, VGS = 0, IDSS = 3mA)
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2SK370
2SJ108
55MAX
2SK370
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2SJ108
Abstract: 2SK370 IDSS -6.5mA
Text: TOSHIBA 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS • U nit in mm Suitable for Use as First Stage for Equalizer and MC Head 4.2MAX. Amplifiers. High |Yfc| : |Yfs | = 22ms Typ. (VDg = 10V, VGS = 0, IDg g = 3mA)
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2SK370
2SJ108
55MAX
2SK370
IDSS -6.5mA
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2SK370
Abstract: 2SJ108
Text: T O S H IB A 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfe| : |Yfs| = 22ms Typ. (VD S=10V , VGS = 0, IDSS = 3mA)
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2SK370
2SJ108
55MAX.
2SK370
2SJ108
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2SJ108
Abstract: 2SK370
Text: TO SH IB A 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfe| : |Yfs| = 22ms Typ. (VD S=10V , VGS = 0, IDSS = 3mA)
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2SK370
2SJ108
55MAX.
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K3 7 Q FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm S u ita b le for U se as F ir s t S ta g e for E q u a liz e r a n d MC H e a d 4.2 VI A X . Amplifiers. TTiO“
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2SK370
2SJ108
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2SJ108
Abstract: 2SK370
Text: 2SJ108 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS • Recommended for First Stages of EQ Amplifiers and MC Head Amplifiers. • High |Yfs| : |Yfs| = 22mS Typ. (VDS= -10V , VGS = 0, IDSS=-3m A )
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2SJ108
----10V,
2SK370
XV11YV1U
55MAX.
2SJ108
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2SK370
Abstract: 2SJ108
Text: TOSHIBA 2SJ108 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 LOW NOISE AUDIO AMPLIFIER APPLICATIONS • U nit in mm Recommended for First Stages of EQ Amplifiers and MC Head 4.2MAX — Amplifiers. • High |Yfs| x: < I fSI ro 1
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2SJ108
--10V,
55MAX
----10V,
2SK370
2SJ108
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ108 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 LOW NOISE AUDIO AMPLIFIER APPLICATIONS • Unit in mm Recommended for First Stages of EQ Amplifiers and MC Head 4.2 VI A X . Amplifiers. • TTicrVi e >~ II V * lry Ji
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2SJ108
--10V,
----10V,
2SK370
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SJ108 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS Recommended for First Stages of EQ Amplifiers and MC Head Amplifiers. 4 .2 M A X . H igh |Yfs| : |Yfs| = 22mS Typ. (VDS= —10V, VGS = 0, IDSS= -3m A )
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2SJ108
2SK370
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transistor k117
Abstract: transistor k363 K369 k117 transistor transistor k364 transistor K246 K30ATM k117 equivalent K363 transistor k246 transistor
Text: 10-1 Small Signal Transistors Mini-Package Type •c (m A ) f j T Y P . (M IN ) V C E (sat) M A X . hFE PC (mW) CCE IV ) >C im A ) ‘c IV ) im A ) !8 Im A ) (M Hz) V CE (V ) !C Im A ) 2SA 1048 2 SC 2 4 5 8 50 150 200 70 ~ 4 0 0 /7 00 6 2 0 .3 /0 .2 5 100
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2SC2458
2SC2459
2SC2710
2SC3267
2SC3378
2SC3488
75393P
75393S
75393F
transistor k117
transistor k363
K369
k117 transistor
transistor k364
transistor K246
K30ATM
k117 equivalent
K363 transistor
k246 transistor
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
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