K3667

Abstract: toshiba k3667 2SK3667 transistor compatible k3667
Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)

K3662

Abstract: 2SK3662
Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 55 S (typ.)

K3669

Abstract: 2SK3669
Contextual Info: 2SK3669 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSVII 2SK3669 ○ スイッチングレギュレータ用 ○ スイッチングアンプ用 ○ モータドライブ用 順方向伝達アドミタンスが高い。 : |Yfs| = 6 S (標準)

2SK3559

Abstract: IDA-20
Contextual Info: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series „ Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal

K3662

Abstract: K366 2SK3662
Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) · High forward transfer admittance: |Yfs| = 55 S (typ.)

2SJ107

Abstract: 2SK366
Contextual Info: TO SH IB A 2SK366 TOSHIBA EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK366 FOR AUDIO AM PLIFIER, ANALOG-SWITCH, CONSTANT CURRENT AND Unit in mm IMPEDANCE CONVERTER APPLICATIONS 4.2 M AX. High Voltage Vg d S = - 4 0 V High Input Impedance IG S S = -l.O nA Max. (Vg s = -30V )

Contextual Info: 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSII 2SK3662 Switching Regulator, DC−DC Converter, Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 55 S (typ.)

2SK3666

Abstract: D1306 ITR00633 ITR00634 ITR00635 ITR00636 ITR00637 7013A-011
Contextual Info: 2SK3666 注文コード No. N 8 1 5 8 A 三洋半導体データシート 半導体ニューズ No.N8158 とさしかえてください。 2SK3666 N チャネル接合形シリコン電界効果トランジスタ 低周波一般増幅用 , インピーダンス変換用

2SK3663

Contextual Info: データ・シート データ・シート MOS 形電界効果トランジスタ 形電界効果トランジスタ MOS Field Effect Transistor 2SK3663 N チャネル MOS FET スイッチング用 2SK3663 は，2.5 V 電源系による直接駆動が可能なス

Contextual Info: 2SK366 TOSHIBA Effect Transistor Silicon N Channel Junction Type 2SK366 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications • Unit: mm High voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

toshiba k3667

Abstract: K3667 ALL k3667 K366 2SK3667
Contextual Info: 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)

K3669

Abstract: 2SK3669 MJ1005
Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII 2SK3669 Switching Regulators, for Audio Amplifier and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 95 mΩ (typ.) · High forward transfer admittance: |Yfs| = 6 S (typ.)

Contextual Info: Ordering number : EN8158B 2SK3666 N-Channel JFET http://onsemi.com 30V, 0.6 to 6.0mA, 6.5mS, CP Applications • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features • • Small IGSS Small Ciss Specifications

Contextual Info: 2SK3666 Ordering number : ENN8158 2SK3666 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applicatins • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.

2SJ107

Abstract: 2SK366 2SK3663 Toshiba 2SJ
Contextual Info: 2SK366 TOSHIBA Effect Transistor Silicon N Channel Junction Type 2SK366 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications • Unit: mm High voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

Contextual Info: 2SK3666 Ordering number : EN8158B SANYO Semiconductors DATA SHEET N-Channel Junctin Silicon FET 2SK3666 Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applications • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications

2SK3668

Abstract: 2SK3668-ZK
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3668 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3668 is N-channel DMOS FET device that features a low on-state resistance, low charge and excellent switching characteristics, designed for high

K3669

Abstract: K366 2SK3669
Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.)

SC-75

Abstract: 2SK3664
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3664 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3664 is a switching device, which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent

Contextual Info: Transistors IC SMD Type Product specification 2SK3668 TO-263 +0.1 1.27-0.1 Features Low gate charge Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 MAX. VGS = 10 V, ID = 5.0 A 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS(on) = 0.55 Surface mount package available +0.2 2.54-0.2

K3662

Abstract: 2SK3662 as58
Contextual Info: 2SK3662 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIII 2SK3662 ○ スイッチングレギュレータ用 ○ DC-DC コンバータモータドライブ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 55 S (標準)

K3667

Abstract: 2SK3667 S12C toshiba k3667
Contextual Info: 2SK3667 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK3667 ○ スイッチングレギュレータ用 単位: mm : RDS ( ON ) = 0.75 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.5 S (標準)

2SK3665

Contextual Info: Silicon MOSFET 2SK3665 N-channel enhancement mode MOSFET High speed switching Rating Unit Drain-Source breakdown voltage VDSS 200 V Gate-Source voltage VGSS ±30 V 3.0 φ 3.3±0.2 (1.5) 2.0±0.3 20.0±0.5 (2.5) Solder Dip Symbol Parameter 3.0±0.3 (1.5)

K366

Abstract: K3669 2SK3669
Contextual Info: 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VII 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications Unit: mm 1.5 ± 0. 2 6.5 ± 0.2 High forward transfer admittance: |Yfs| = 6 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 100 V)