2SK3559
Abstract: IDA-20
Text: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal
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2SK3628/2SK3559/2SK3665/2SK3637/2SK3652
2SK3628
2SK3559
2SK3665
2SK3637
2SK3652
E00128AE
IDA-20
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k3652
Abstract: k365 2SK3652
Text: Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET • Features Unit: mm 15.5±0.5 V Gate-source surrender voltage VGSS ±30 V Drain current ID 50 A Peak drain current IDP 200 A EAS 2 200 mJ PD 100 W Avalanche energy capability * Power dissipation Ta = 25°C
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2SK3652
k3652
k365
2SK3652
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k3652
Abstract: k365 2SK3652
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET • Features Unit: mm 15.5±0.5 (4.5) Peak drain current Avalanche energy capability * Power dissipation Ta = 25°C Junction temperature
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2002/95/EC)
2SK3652
K3652
k3652
k365
2SK3652
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SK3652 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 For high-speed switching 2 .5 4 -0+ 0.2.2
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2SK3652
O-263
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2SK3652
Abstract: k3652 k365
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET • Features Unit: mm 15.5±0.5 V Gate-source surrender voltage VGSS ±30 V Drain current ID 50 A Peak drain current IDP 200 A EAS 2 200
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2002/95/EC)
2SK3652
2SK3652
k3652
k365
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Untitled
Abstract: No abstract text available
Text: Silicon MOSFET 2SK3652 N-channel enhancement mode MOSFET High speed switching φ 3.2±0.1 VDSS 230 V Gate-Source voltage VGSS ±30 V 50 A IDP 230 A EAS 2200 mJ Allowable power Tc = 25 °C *2 dissipation Ta = 25 °C *3 PD 100 W PD 3 W Junction temperature Tj
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2SK3652
100ms
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k365
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET • Features Unit: mm 15.5±0.5 φ 3.2±0.1 Unit 230 V Gate-source surrender voltage VGSS ±30 V ID 50 A IDP 200 A EAS 2 200 mJ PD 100 W
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2002/95/EC)
2SK3652
k365
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2SK3652
Abstract: SMD Transistors nc
Text: Transistors IC SMD Type N-channel Enhancement Mode MOSFET 2SK3652 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 For high-speed switching
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2SK3652
O-263
2SK3652
SMD Transistors nc
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2sk3665
Abstract: 2SK3559 2SK3628 2SK3652 2SK3637 2SK3665 equivalent input id
Text: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal
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2SK3628/2SK3559/2SK3665/2SK3637/2SK3652
2sk3665
2SK3559
2SK3628
2SK3652
2SK3637
2SK3665 equivalent input id
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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