2SJ0672
Abstract: 2SK3539 UP04979
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter
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2002/95/EC)
UP04979
2SJ0672
2SK3539
OD-723
-20lues,
2SJ0672
2SK3539
UP04979
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ON4030
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter
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2002/95/EC)
UP04979
2SJ0672
2SK3539
ON4030
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PDF
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2SK3539G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain Th an W is k y
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2002/95/EC)
2SK3539G
2SK3539G
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PDF
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2SJ0672
Abstract: 2SK3539 UP04979
Text: Composite Transistors UP04979 Silicon N-channel MOSFET Tr1 Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter Tr1 Symbol Rating Unit VDSS 50 V Marking Symbol: 4T Gate-source voltage
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UP04979
2SJ0672
2SK3539
OD-723
2SJ0672
2SK3539
UP04979
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PDF
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2SK3539
Abstract: No abstract text available
Text: Silicon MOSFETs Small Signal 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • Wide frequency band • Gate protection diode built-in 0.9±0.1
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2SK3539
2SK3539
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PDF
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2SJ0672
Abstract: 2SK3539 UP04979
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 For switching • 2SJ0672 + 2SK3539
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2002/95/EC)
UP04979
2SJ0672
2SK3539
OD-723
2SJ0672
2SK3539
UP04979
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 • Features 1 • 2SJ0672 + 2SK3539 ■ Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
UP04979
2SJ0672
2SK3539
OD-723
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package ■ Features • High-speed switching • Wide frequency band • Gate protection diode built-in ■ Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SK3539G
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚ 2 0.2±0.1 1 2.1±0.1 M Di ain sc te on na tin nc ue e/ d • High-speed switching
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2002/95/EC)
2SK3539
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2SK3539
Abstract: No abstract text available
Text: Silicon MOSFETs Small Signal 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • Wide frequency band • Gate-peotection diode built-in 0.9±0.1
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2SK3539
2SK3539
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2SK3539
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • Wide frequency band
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2002/95/EC)
2SK3539
2SK3539
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2SJ0672
Abstract: 2SK3539 UP04979
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 For switching • 2SJ0672 + 2SK3539
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2002/95/EC)
UP04979
2SJ0672
2SK3539
OD-723
2SJ0672
2SK3539
UP04979
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te on na
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2002/95/EC)
2SK3539G
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 3 M Di ain sc te on na tin nc ue e/ d 5˚ • High-speed switching
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2002/95/EC)
2SK3539
SC-70
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2SK3539G
Abstract: YP diode code marking
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET M Di ain sc te on na tin nc ue e/ d For switching • Package • High-speed switching • Wide frequency band • Gate protection diode built-in
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2002/95/EC)
2SK3539G
2SK3539G
YP diode code marking
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2SK3539
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539 Silicon N-channel MOSFET (0.425) Unit: mm For switching 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 2 0.2±0.1 1 5˚ ue pl d in an c
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2SK3539
2SK3539
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01878 Silicon N-channel MOSFET Unit: mm +0.05 (0.30) 4 • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 1
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2002/95/EC)
UP01878
2SK3539
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01878 Silicon N-channel MOSFET Unit: mm +0.05 (0.30) 4 • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 1
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2002/95/EC)
UP01878
2SK3539
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04878G Silicon N-channel MOSFET For switching • Features Package Allowing 2.5 V drive Incorporating a built-in gate protection-diode Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
UP04878G
2SK3539G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04878 Silicon N-channel MOSFET For switching 5 0.12+0.05 –0.02 4 • Features 5˚ • Allowing 2.5 V drive • Incorporating a built-in gate protection-diode • S-Mini type 6-pin package, reduction of the mounting area and
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2002/95/EC)
XP04878
2SK3539
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04878 Silicon N-channel MOSFET For switching 5 0.12+0.05 –0.02 4 • Features 5˚ • Allowing 2.5 V drive • Incorporating a built-in gate protection-diode • S-Mini type 6-pin package, reduction of the mounting area and
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2002/95/EC)
XP04878
2SK3539
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