2SK3438
Abstract: No abstract text available
Text: 2SK3438 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3438 ○ DC-DC コンバータ用 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 4.5 S (標準)
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2SK3438
2SK3438
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Untitled
Abstract: No abstract text available
Text: 2SK3438 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type -MOSV 2SK3438 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 0.74 Unit: mm (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.)
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2SK3438
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2SK3438
Abstract: No abstract text available
Text: 2SK3438 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3438 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.74 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.)
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2SK3438
2SK3438
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K343
Abstract: 2SK3438
Text: 2SK3438 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3438 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.74 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.)
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2SK3438
K343
2SK3438
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Untitled
Abstract: No abstract text available
Text: 2SK3438 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3438 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.74 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.)
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2SK3438
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2SK3438
Abstract: No abstract text available
Text: 2SK3438 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3438 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.74 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.)
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2SK3438
2SK3438
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Untitled
Abstract: No abstract text available
Text: 2SK3438 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3438 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.74 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.)
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2SK3438
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2SK3438
Abstract: k3438
Text: 2SK3438 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3438 ○ DC-DC コンバータ用 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 4.5 S (標準)
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2SK3438
2SK3438
k3438
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2SK3438
Abstract: No abstract text available
Text: 2SK3438 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3438 DC-DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.74 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.)
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2SK3438
2SK3438
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2SK3438
Abstract: No abstract text available
Text: 2SK3438 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3438 DC-DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.74 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.)
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2SK3438
2SK3438
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Untitled
Abstract: No abstract text available
Text: 2SK3438 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3438 DC-DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.74 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.)
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2SK3438
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Untitled
Abstract: No abstract text available
Text: 2SK3438 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3438 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.74 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.)
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2SK3438
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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Toshiba TMPA8873
Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6
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SCE0001C
S-167
SCE0001D
Toshiba TMPA8873
TA1343NG
TMPA8891
TMPA8893
tmpa8873
tmpa8859
TC90A96BFG
TB1318FG
TMPA8857
TMPA8853
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MOSFET TOSHIBA 2SK2917
Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6
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DP0540004
MOSFET TOSHIBA 2SK2917
2sK2750 equivalent
2sk2997
2SK3759
2SJ618
2sk3067
2SK3767
2SK2842 equivalent
2SK2837 equivalent
2SK2843 equivalent
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017F
E-28831
BCE0017G
2SK3567 equivalent
2SK3569 equivalent
TPCA*8023
TK8A50D equivalent
2SK2056
2SK3878 equivalent
tpca8023
2SK941 equivalent
2SK3561 equivalent
2SK1603
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004L
TTC4116*
2SC4118
TTA1586*
2SA1588
2SC4117
2SA1587
2SC5233
2SC4738
2SA1832
GT30F131
GT30F124
TK18A60V
smd m5 transistor 6-pin
SMD TRANSISTOR H2A NPN
GT50N322
MARKING SMD PNP TRANSISTOR h2a
GT30J124
*30f124
TPCP8R01
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ESM 740
Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.
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SCE0003A
ESM 740
transistor SMD t04 51
D245A
LM2804
transistor SMD t04
Solar Garden Light Controller 4 pin
2fu smd transistor
transistor t04 smd
pnp Octal Darlington Transistor Arrays DIP
WB126
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2SK3878 equivalent
Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)
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2SK2963
2SK2962
2SJ508
2SJ509
2SK3670
2SJ313
2SJ338
2SK2013
2SK2162
2SJ360
2SK3878 equivalent
2sk2611
2SK3759
2SK3878
2SK3869
2SK2013
toshiba POWER MOS FET 2sj 2sk
2SK3868
2SK3567 equivalent
2SK2718
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
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TA1343NG
Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
Text: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理
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p12p13
p17p18
p19p22
SCJ0001D
SCJ0001C
TA1343NG
TB1318FG
pal 011 A SPEAKER OUTPUT IC
TC90A96BFG
tmpa8859
Toshiba TMPA8873
TMPA8893
tmpa8873
TMPA8891
gt30f122
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2SK4207
Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
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BCJ0082B
BCJ0082A
2SK4207
to220sis
TPCA*8023
tk80A08K3
TPC8119
TK40A08K3
2SK4112
ssm3j16fs
2sk3568
TPC8A03
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TPCA*8064
Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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BCE0082B
TPCA*8064
TK12A10K3
TPCA8077
2SK3567 equivalent
SSM3J328
TPCA8077-H
TJ11A10M3
TK50E06K3A
TPCA*8077
TPCA8028
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Untitled
Abstract: No abstract text available
Text: SEP 25*00 06:01 »CCT-FAX* HNO:05250258 <Normal message> From:67361 To:33745 [Alt.] P004/017 OUT:0001 TOSHIBA , 2SK3438 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt -MOSV PRELIMINARY 2SK3438 INDUSTRIAL APPLICATIONS HIGH SPEED SWITCHING AND HIGH VOLTAGE APPLICATIONS.
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P004/017
2SK3438
--10A,
--10A
00A//i
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